JP6633918B2 - パターン検査装置 - Google Patents
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- JP6633918B2 JP6633918B2 JP2016007206A JP2016007206A JP6633918B2 JP 6633918 B2 JP6633918 B2 JP 6633918B2 JP 2016007206 A JP2016007206 A JP 2016007206A JP 2016007206 A JP2016007206 A JP 2016007206A JP 6633918 B2 JP6633918 B2 JP 6633918B2
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- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
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- G06V10/751—Comparing pixel values or logical combinations thereof, or feature values having positional relevance, e.g. template matching
- G06V10/7515—Shifting the patterns to accommodate for positional errors
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- H04N23/45—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from two or more image sensors being of different type or operating in different modes, e.g. with a CMOS sensor for moving images in combination with a charge-coupled device [CCD] for still images
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- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
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- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
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- H04N25/768—Addressed sensors, e.g. MOS or CMOS sensors for time delay and integration [TDI]
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- Artificial Intelligence (AREA)
- Software Systems (AREA)
- Human Computer Interaction (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
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Description
パターンが形成された基板に反射照明光を照明する反射照明光学系と、
反射照明光学系の光路中に配置され、反射照明光の一部の照射を受ける、ラインアンドスペースパターンによる第1の基準パターンが形成された第1の絞りと、
第1の基準パターンを通過した基準パターン像の一部を反射する半透過反射板と、
基板のパターン像を結像させる結像光学系と、
結像光学系の光路中に配置され、半透過反射板によって反射された基準パターン像の上述した一部が投影される、ラインアンドスペースパターンによる第2の基準パターンが形成された第2の絞りと、
第2の基準パターンを通過した基準パターン像の上述した一部を受光するタイム・ディレイ・インテグレーションセンサ(TDIセンサ)と、
を備えたことを特徴とする。
複数の受光素子の一部により、変位量演算用の光が受光され、複数の受光素子の残部により、基板のパターン像が撮像され、
演算された変位量を用いて、基板のパターン像と参照画像との相対位置を補正する補正部と、
補正された位置関係で基板のパターン像と参照画像とを比較する比較部と、
をさらに備えると好適である。
図1は、実施の形態1におけるパターン検査装置の構成を示す構成図である。図1において、マスク基板101(検査対象基板の一例)に形成されたパターンの欠陥を検査する検査装置100は、光学画像取得部150、及び制御系回路160(制御部)を備えている。
(1) Δx=k・(Q2−Q1)/(Q1+Q2)
(2) Δx=k・(Q1−Q2)/(Q1+Q2)
20 検査ストライプ
30 フレーム領域
61 ビームスプリッタ
62 レンズ
63 ミラー
64,65 レンズ
67 ミラー
68 コンデンサレンズ
69 レンズ
70,72 レンズ
73 ミラー
74,75,76 レンズ
80,81,82 レンズ
100 検査装置
101 マスク基板
102 XYθテーブル
103 光源
104 対物レンズ
105,205 TDIセンサ
106,206 センサ回路
107 位置回路
108 比較回路
109 磁気ディスク装置
110 制御計算機
111 展開回路
112 参照回路
113 オートローダ制御回路
114 テーブル制御回路
115 磁気テープ装置
116 FD
117 CRT
118 パターンモニタ
119 プリンタ
120 バス
122 レーザ測長システム
123,223 ストライプパターンメモリ
150 光学画像取得部
160 制御系回路
170 透過照明光学系
172 反射照明光学系
174 ビームスプリッタ
176,178 結像光学系
180 半透過反射板
182,184 結像光学系
Claims (4)
- パターンが形成された基板に反射照明光を照明する反射照明光学系と、
前記反射照明光学系の光路中に配置され、前記反射照明光の一部の照射を受ける、ラインアンドスペースパターンによる第1の基準パターンが形成された第1の絞りと、
前記第1の基準パターンを通過した基準パターン像の一部を反射する半透過反射板と、
前記基板のパターン像を結像させる結像光学系と、
前記結像光学系の光路中に配置され、前記半透過反射板によって反射された前記基準パターン像の前記一部が投影される、ラインアンドスペースパターンによる第2の基準パターンが形成された第2の絞りと、
前記第2の基準パターンを通過した前記基準パターン像の前記一部を受光するタイム・ディレイ・インテグレーションセンサ(TDIセンサ)と、
を備え、
前記第1と第2の基準パターンの一方は、2段のラインアンドスペースパターンが、逆のパターン種が接続されるように配置され、他方は、1段のラインアンドスペースパターンが配置されることを特徴とするパターン検査装置。 - 前記TDIセンサによって受光される前記基準パターン像の前記一部の光量変化に係数を乗じることによって空気ゆらぎの変位量を演算する演算部をさらに備えたことを特徴とする請求項1記載のパターン検査装置。
- 前記2段のラインアンドスペースパターンの一方のラインアンドスペースパターンを通過した光量から他方のラインアンドスペースパターンを通過した光量を差し引いた差分を前記一方のラインアンドスペースパターンを通過した光量と前記他方のラインアンドスペースパターンを通過した光量と和で割った値に前記係数を乗じることによって、前記変位量を演算することを特徴とする請求項2記載のパターン検査装置。
- 前記TDIセンサは、2次元状に配列された複数の受光素子を有し、
前記複数の受光素子の一部により、前記変位量演算用の光が受光され、前記複数の受光素子の残部により、前記基板のパターン像が撮像され、
演算された前記変位量を用いて、前記基板のパターン像と参照画像との相対位置を補正する補正部と、
補正された位置関係で前記基板のパターン像と前記参照画像とを比較する比較部と、
をさらに備えたことを特徴とする請求項2又は3記載のパターン検査装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016007206A JP6633918B2 (ja) | 2016-01-18 | 2016-01-18 | パターン検査装置 |
US15/407,397 US10282635B2 (en) | 2016-01-18 | 2017-01-17 | Pattern inspection apparatus |
DE102017200628.5A DE102017200628B4 (de) | 2016-01-18 | 2017-01-17 | Musterprüfvorrichtung |
KR1020170008561A KR101882837B1 (ko) | 2016-01-18 | 2017-01-18 | 패턴 검사 장치 |
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JP2016007206A JP6633918B2 (ja) | 2016-01-18 | 2016-01-18 | パターン検査装置 |
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Publication Number | Publication Date |
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JP2017129629A JP2017129629A (ja) | 2017-07-27 |
JP6633918B2 true JP6633918B2 (ja) | 2020-01-22 |
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DE102017203879B4 (de) * | 2017-03-09 | 2023-06-07 | Carl Zeiss Smt Gmbh | Verfahren zum Analysieren einer defekten Stelle einer photolithographischen Maske |
JP7079569B2 (ja) * | 2017-04-21 | 2022-06-02 | 株式会社ニューフレアテクノロジー | 検査方法 |
TWI628415B (zh) * | 2017-09-13 | 2018-07-01 | 國立清華大學 | 基於影像尺的定位量測系統 |
AU2020303905A1 (en) * | 2019-06-28 | 2022-02-24 | Benjamin Shapiro | Systems and methods for high-magnification high-resolution photography using a small imaging system |
US11263741B2 (en) * | 2020-01-24 | 2022-03-01 | Applied Materials Israel Ltd. | System and methods of generating comparable regions of a lithographic mask |
KR20210138210A (ko) * | 2020-05-11 | 2021-11-19 | 삼성디스플레이 주식회사 | 마스크 검사 장치 및 이를 이용한 마스크 검사 방법 |
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US5424552A (en) * | 1991-07-09 | 1995-06-13 | Nikon Corporation | Projection exposing apparatus |
JPH07106243A (ja) * | 1993-03-15 | 1995-04-21 | Nikon Corp | 水平位置検出装置 |
JP3291818B2 (ja) * | 1993-03-16 | 2002-06-17 | 株式会社ニコン | 投影露光装置、及び該装置を用いる半導体集積回路製造方法 |
US6151122A (en) * | 1995-02-21 | 2000-11-21 | Nikon Corporation | Inspection method and apparatus for projection optical systems |
JP3854734B2 (ja) * | 1998-09-03 | 2006-12-06 | キヤノン株式会社 | 面位置検出装置及びそれを用いたデバイスの製造方法 |
JP3190913B1 (ja) * | 2000-10-18 | 2001-07-23 | レーザーテック株式会社 | 撮像装置及びフォトマスクの欠陥検査装置 |
JP2003068622A (ja) * | 2001-08-28 | 2003-03-07 | Canon Inc | 露光装置及びその制御方法並びにデバイスの製造方法 |
JP2009300426A (ja) | 2008-05-16 | 2009-12-24 | Nuflare Technology Inc | レチクル欠陥検査装置およびレチクル欠陥検査方法 |
JP2011169743A (ja) | 2010-02-18 | 2011-09-01 | Nuflare Technology Inc | 検査装置および検査方法 |
JP5050078B2 (ja) * | 2010-06-07 | 2012-10-17 | 株式会社東芝 | パターン検査装置 |
NL2007615A (en) * | 2010-11-30 | 2012-05-31 | Asml Netherlands Bv | Method of operating a patterning device and lithographic apparatus. |
JP5921990B2 (ja) * | 2012-08-23 | 2016-05-24 | 株式会社ニューフレアテクノロジー | 欠陥検出方法 |
JP6025489B2 (ja) | 2012-10-11 | 2016-11-16 | 株式会社ニューフレアテクノロジー | 検査装置および検査装置システム |
JP6043583B2 (ja) * | 2012-10-23 | 2016-12-14 | 株式会社ニューフレアテクノロジー | 焦点位置検出装置、検査装置、焦点位置検出方法および検査方法 |
JP5944850B2 (ja) * | 2013-03-11 | 2016-07-05 | 株式会社日立ハイテクノロジーズ | 欠陥検査方法及びこれを用いた装置 |
JP2016008941A (ja) * | 2014-06-26 | 2016-01-18 | 株式会社日立ハイテクノロジーズ | 欠陥観察方法及びその装置並びに欠陥検出装置 |
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JP2017009379A (ja) * | 2015-06-19 | 2017-01-12 | 株式会社ニューフレアテクノロジー | 検査装置および検査方法 |
KR102200257B1 (ko) * | 2016-09-06 | 2021-01-11 | 에이에스엠엘 홀딩 엔.브이. | 검사 시스템에서의 포커싱을 위한 디바이스 및 방법 |
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