JP6628366B2 - 有機ケイ素化合物、硬化性シリコーン組成物、および半導体装置 - Google Patents
有機ケイ素化合物、硬化性シリコーン組成物、および半導体装置 Download PDFInfo
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- JP6628366B2 JP6628366B2 JP2016523157A JP2016523157A JP6628366B2 JP 6628366 B2 JP6628366 B2 JP 6628366B2 JP 2016523157 A JP2016523157 A JP 2016523157A JP 2016523157 A JP2016523157 A JP 2016523157A JP 6628366 B2 JP6628366 B2 JP 6628366B2
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- 239000000203 mixture Substances 0.000 title claims description 86
- 229920001296 polysiloxane Polymers 0.000 title claims description 50
- 150000003961 organosilicon compounds Chemical class 0.000 title claims description 34
- 239000004065 semiconductor Substances 0.000 title claims description 24
- 125000003342 alkenyl group Chemical group 0.000 claims description 26
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 26
- 239000002318 adhesion promoter Substances 0.000 claims description 21
- 239000003054 catalyst Substances 0.000 claims description 15
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 15
- 238000006459 hydrosilylation reaction Methods 0.000 claims description 13
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 13
- 125000005417 glycidoxyalkyl group Chemical group 0.000 claims description 8
- 229920006136 organohydrogenpolysiloxane Polymers 0.000 claims description 8
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 claims description 4
- 150000003377 silicon compounds Chemical class 0.000 claims 1
- -1 glycidoxypropyl group Chemical group 0.000 description 83
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 27
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 27
- 125000004432 carbon atom Chemical group C* 0.000 description 17
- 239000000047 product Substances 0.000 description 16
- 125000000217 alkyl group Chemical group 0.000 description 15
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 15
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 229910052697 platinum Inorganic materials 0.000 description 12
- 239000000843 powder Substances 0.000 description 12
- 229920001577 copolymer Polymers 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 10
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 10
- 229920005989 resin Polymers 0.000 description 10
- 239000011347 resin Substances 0.000 description 10
- 239000000243 solution Substances 0.000 description 10
- 125000003545 alkoxy group Chemical group 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 125000005375 organosiloxane group Chemical group 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 125000003118 aryl group Chemical group 0.000 description 7
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 125000003944 tolyl group Chemical group 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 238000009835 boiling Methods 0.000 description 6
- RCNRJBWHLARWRP-UHFFFAOYSA-N ethenyl-[ethenyl(dimethyl)silyl]oxy-dimethylsilane;platinum Chemical compound [Pt].C=C[Si](C)(C)O[Si](C)(C)C=C RCNRJBWHLARWRP-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 229910052693 Europium Inorganic materials 0.000 description 5
- 238000005481 NMR spectroscopy Methods 0.000 description 5
- 229910004283 SiO 4 Inorganic materials 0.000 description 5
- 239000002253 acid Substances 0.000 description 5
- 125000002947 alkylene group Chemical group 0.000 description 5
- 125000003710 aryl alkyl group Chemical group 0.000 description 5
- 239000012964 benzotriazole Substances 0.000 description 5
- 150000001244 carboxylic acid anhydrides Chemical group 0.000 description 5
- 150000002430 hydrocarbons Chemical group 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 5
- 239000011541 reaction mixture Substances 0.000 description 5
- 229920002554 vinyl polymer Polymers 0.000 description 5
- QWENRTYMTSOGBR-UHFFFAOYSA-N 1H-1,2,3-Triazole Chemical compound C=1C=NNN=1 QWENRTYMTSOGBR-UHFFFAOYSA-N 0.000 description 4
- 125000000094 2-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 4
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 4
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 4
- 229910052684 Cerium Inorganic materials 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 239000004954 Polyphthalamide Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 125000001931 aliphatic group Chemical group 0.000 description 4
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 4
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 4
- 125000004122 cyclic group Chemical group 0.000 description 4
- 125000005388 dimethylhydrogensiloxy group Chemical group 0.000 description 4
- 125000003700 epoxy group Chemical group 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 238000002329 infrared spectrum Methods 0.000 description 4
- 125000001624 naphthyl group Chemical group 0.000 description 4
- 229920006375 polyphtalamide Polymers 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 125000005023 xylyl group Chemical group 0.000 description 4
- 0 *C(CCC12)CC1[N+]([O-])O[N+]2[O-] Chemical compound *C(CCC12)CC1[N+]([O-])O[N+]2[O-] 0.000 description 3
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 3
- 125000000962 organic group Chemical group 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 3
- 229920001843 polymethylhydrosiloxane Polymers 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 125000005372 silanol group Chemical group 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- STMDPCBYJCIZOD-UHFFFAOYSA-N 2-(2,4-dinitroanilino)-4-methylpentanoic acid Chemical compound CC(C)CC(C(O)=O)NC1=CC=C([N+]([O-])=O)C=C1[N+]([O-])=O STMDPCBYJCIZOD-UHFFFAOYSA-N 0.000 description 2
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 2
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 2
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 125000004369 butenyl group Chemical group C(=CCC)* 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 239000007809 chemical reaction catalyst Substances 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 238000004040 coloring Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 125000003493 decenyl group Chemical group [H]C([*])=C([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 2
- 238000002845 discoloration Methods 0.000 description 2
- 125000005066 dodecenyl group Chemical group C(=CCCCCCCCCCC)* 0.000 description 2
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 2
- 239000002223 garnet Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 125000006038 hexenyl group Chemical group 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 125000005187 nonenyl group Chemical group C(=CCCCCCCC)* 0.000 description 2
- 125000004365 octenyl group Chemical group C(=CCCCCCC)* 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 125000002255 pentenyl group Chemical group C(=CCCC)* 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 239000002683 reaction inhibitor Substances 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical compound S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 150000003852 triazoles Chemical class 0.000 description 2
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 2
- 125000005065 undecenyl group Chemical group C(=CCCCCCCCCC)* 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- KWEKXPWNFQBJAY-UHFFFAOYSA-N (dimethyl-$l^{3}-silanyl)oxy-dimethylsilicon Chemical compound C[Si](C)O[Si](C)C KWEKXPWNFQBJAY-UHFFFAOYSA-N 0.000 description 1
- HMVBQEAJQVQOTI-SOFGYWHQSA-N (e)-3,5-dimethylhex-3-en-1-yne Chemical compound CC(C)\C=C(/C)C#C HMVBQEAJQVQOTI-SOFGYWHQSA-N 0.000 description 1
- GRGVQLWQXHFRHO-AATRIKPKSA-N (e)-3-methylpent-3-en-1-yne Chemical compound C\C=C(/C)C#C GRGVQLWQXHFRHO-AATRIKPKSA-N 0.000 description 1
- YFSYFAJGRGDWQT-KTKRTIGZSA-N (z)-1-(benzotriazol-1-yl)octadec-9-en-1-one Chemical compound C1=CC=C2N(C(=O)CCCCCCC\C=C/CCCCCCCC)N=NC2=C1 YFSYFAJGRGDWQT-KTKRTIGZSA-N 0.000 description 1
- MDTUWBLTRPRXBX-UHFFFAOYSA-N 1,2,4-triazol-3-one Chemical compound O=C1N=CN=N1 MDTUWBLTRPRXBX-UHFFFAOYSA-N 0.000 description 1
- FMCUPJKTGNBGEC-UHFFFAOYSA-N 1,2,4-triazol-4-amine Chemical compound NN1C=NN=C1 FMCUPJKTGNBGEC-UHFFFAOYSA-N 0.000 description 1
- ZEWJFUNFEABPGL-UHFFFAOYSA-N 1,2,4-triazole-3-carboxamide Chemical compound NC(=O)C=1N=CNN=1 ZEWJFUNFEABPGL-UHFFFAOYSA-N 0.000 description 1
- LZTSCEYDCZBRCJ-UHFFFAOYSA-N 1,2-dihydro-1,2,4-triazol-3-one Chemical compound OC=1N=CNN=1 LZTSCEYDCZBRCJ-UHFFFAOYSA-N 0.000 description 1
- ASOKPJOREAFHNY-UHFFFAOYSA-N 1-Hydroxybenzotriazole Chemical compound C1=CC=C2N(O)N=NC2=C1 ASOKPJOREAFHNY-UHFFFAOYSA-N 0.000 description 1
- AJARSKDYXXACJR-UHFFFAOYSA-N 1-[(dibutylamino)methyl]benzotriazole-4-carboxylic acid Chemical compound C1=CC=C2N(CN(CCCC)CCCC)N=NC2=C1C(O)=O AJARSKDYXXACJR-UHFFFAOYSA-N 0.000 description 1
- LQPDFQFGNCXQSL-UHFFFAOYSA-N 1-[(dioctylamino)methyl]benzotriazole-4-carboxylic acid Chemical compound C1=CC=C2N(CN(CCCCCCCC)CCCCCCCC)N=NC2=C1C(O)=O LQPDFQFGNCXQSL-UHFFFAOYSA-N 0.000 description 1
- KGEPBYXGRXRFGU-UHFFFAOYSA-N 1-[[bis(2-ethylhexyl)amino]methyl]benzotriazole-4-carboxylic acid Chemical compound C1=CC=C2N(CN(CC(CC)CCCC)CC(CC)CCCC)N=NC2=C1C(O)=O KGEPBYXGRXRFGU-UHFFFAOYSA-N 0.000 description 1
- DYNVQVFAPOVHNT-UHFFFAOYSA-N 1-[[bis(2-hydroxypropyl)amino]methyl]benzotriazole-4-carboxylic acid Chemical compound C1=CC=C2N(CN(CC(C)O)CC(O)C)N=NC2=C1C(O)=O DYNVQVFAPOVHNT-UHFFFAOYSA-N 0.000 description 1
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 1
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 1
- QYLFHLNFIHBCPR-UHFFFAOYSA-N 1-ethynylcyclohexan-1-ol Chemical compound C#CC1(O)CCCCC1 QYLFHLNFIHBCPR-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- KWKAKUADMBZCLK-UHFFFAOYSA-N 1-octene Chemical group CCCCCCC=C KWKAKUADMBZCLK-UHFFFAOYSA-N 0.000 description 1
- GQCZPFJGIXHZMB-UHFFFAOYSA-N 1-tert-Butoxy-2-propanol Chemical compound CC(O)COC(C)(C)C GQCZPFJGIXHZMB-UHFFFAOYSA-N 0.000 description 1
- AFBBKYQYNPNMAT-UHFFFAOYSA-N 1h-1,2,4-triazol-1-ium-3-thiolate Chemical compound SC=1N=CNN=1 AFBBKYQYNPNMAT-UHFFFAOYSA-N 0.000 description 1
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- VMAWODUEPLAHOE-UHFFFAOYSA-N 2,4,6,8-tetrakis(ethenyl)-2,4,6,8-tetramethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane Chemical compound C=C[Si]1(C)O[Si](C)(C=C)O[Si](C)(C=C)O[Si](C)(C=C)O1 VMAWODUEPLAHOE-UHFFFAOYSA-N 0.000 description 1
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 1
- LHPPDQUVECZQSW-UHFFFAOYSA-N 2-(benzotriazol-2-yl)-4,6-ditert-butylphenol Chemical compound CC(C)(C)C1=CC(C(C)(C)C)=CC(N2N=C3C=CC=CC3=N2)=C1O LHPPDQUVECZQSW-UHFFFAOYSA-N 0.000 description 1
- WXHVQMGINBSVAY-UHFFFAOYSA-N 2-(benzotriazol-2-yl)-4-tert-butylphenol Chemical compound CC(C)(C)C1=CC=C(O)C(N2N=C3C=CC=CC3=N2)=C1 WXHVQMGINBSVAY-UHFFFAOYSA-N 0.000 description 1
- ITLDHFORLZTRJI-UHFFFAOYSA-N 2-(benzotriazol-2-yl)-5-octoxyphenol Chemical compound OC1=CC(OCCCCCCCC)=CC=C1N1N=C2C=CC=CC2=N1 ITLDHFORLZTRJI-UHFFFAOYSA-N 0.000 description 1
- GVNVAWHJIKLAGL-UHFFFAOYSA-N 2-(cyclohexen-1-yl)cyclohexan-1-one Chemical compound O=C1CCCCC1C1=CCCCC1 GVNVAWHJIKLAGL-UHFFFAOYSA-N 0.000 description 1
- WKZLYSXRFUGBPI-UHFFFAOYSA-N 2-[benzotriazol-1-ylmethyl(2-hydroxyethyl)amino]ethanol Chemical compound C1=CC=C2N(CN(CCO)CCO)N=NC2=C1 WKZLYSXRFUGBPI-UHFFFAOYSA-N 0.000 description 1
- CEBKHWWANWSNTI-UHFFFAOYSA-N 2-methylbut-3-yn-2-ol Chemical compound CC(C)(O)C#C CEBKHWWANWSNTI-UHFFFAOYSA-N 0.000 description 1
- KSLSOBUAIFEGLT-UHFFFAOYSA-N 2-phenylbut-3-yn-2-ol Chemical compound C#CC(O)(C)C1=CC=CC=C1 KSLSOBUAIFEGLT-UHFFFAOYSA-N 0.000 description 1
- AGBXYHCHUYARJY-UHFFFAOYSA-N 2-phenylethenesulfonic acid Chemical compound OS(=O)(=O)C=CC1=CC=CC=C1 AGBXYHCHUYARJY-UHFFFAOYSA-N 0.000 description 1
- YTZPUTADNGREHA-UHFFFAOYSA-N 2h-benzo[e]benzotriazole Chemical compound C1=CC2=CC=CC=C2C2=NNN=C21 YTZPUTADNGREHA-UHFFFAOYSA-N 0.000 description 1
- ZDWPBMJZDNXTPG-UHFFFAOYSA-N 2h-benzotriazol-4-amine Chemical compound NC1=CC=CC2=C1NN=N2 ZDWPBMJZDNXTPG-UHFFFAOYSA-N 0.000 description 1
- KFJDQPJLANOOOB-UHFFFAOYSA-N 2h-benzotriazole-4-carboxylic acid Chemical compound OC(=O)C1=CC=CC2=NNN=C12 KFJDQPJLANOOOB-UHFFFAOYSA-N 0.000 description 1
- NECRQCBKTGZNMH-UHFFFAOYSA-N 3,5-dimethylhex-1-yn-3-ol Chemical compound CC(C)CC(C)(O)C#C NECRQCBKTGZNMH-UHFFFAOYSA-N 0.000 description 1
- WVIXTJQLKOLKTQ-UHFFFAOYSA-N 3-(benzotriazol-1-yl)propane-1,2-diol Chemical compound C1=CC=C2N(CC(O)CO)N=NC2=C1 WVIXTJQLKOLKTQ-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
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- C07F7/08—Compounds having one or more C—Si linkages
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
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- C07F7/0834—Compounds having one or more O-Si linkage
- C07F7/0838—Compounds with one or more Si-O-Si sequences
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
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- C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
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- C07F7/1804—Compounds having Si-O-C linkages
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/21—Cyclic compounds having at least one ring containing silicon, but no carbon in the ring
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C08K5/5435—Silicon-containing compounds containing oxygen containing oxygen in a ring
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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Description
で表される。
で表される。
(A)一分子中に少なくとも2個のアルケニル基を有するオルガノポリシロキサン 100質量部、
(B)一分子中に少なくとも2個のケイ素原子結合水素原子を有するオルガノハイドロジェンポリシロキサン{(A)成分と(C)成分に含まれるアルケニル基の合計1モルに対して、0.1〜10.0モルのケイ素原子結合水素原子を提供する量}、
(C)上記の有機ケイ素化合物からなる接着促進剤 0.01〜50質量部、および
(D)ヒドロシリル化反応用触媒(本組成物の硬化を促進するに十分な量)
から少なくともなるものである。
本発明の硬化性シリコーン組成物は、上記の有機ケイ素化合物を接着促進剤として配合することを特徴とする。このような硬化性シリコーン組成物の硬化機構は限定されず、ヒドロシリル化反応、縮合反応、ラジカル反応が例示され、好ましくは、ヒドロシリル化反応である。このヒドロシリル化反応で硬化する硬化性シリコーン組成物として、具体的には、
(A)一分子中に少なくとも2個のアルケニル基を有するオルガノポリシロキサン 100質量部、
(B)一分子中に少なくとも2個のケイ素原子結合水素原子を有するオルガノハイドロジェンポリシロキサン{(A)成分と(C)成分に含まれるアルケニル基の合計1モルに対して、0.1〜10.0モルのケイ素原子結合水素原子を提供する量}、
(C)上記の有機ケイ素化合物からなる接着促進剤 0.01〜50質量部、および
(D)ヒドロシリル化反応用触媒
から少なくともなるものが好ましい。
ViMe2SiO(Me2SiO)xSiMe2Vi
ViPhMeSiO(Me2SiO)xSiMePhVi
ViPh2SiO(Me2SiO)xSiPh2Vi
ViMe2SiO(Me2SiO)x(Ph2SiO)x'SiMe2Vi
ViPhMeSiO(Me2SiO)x(Ph2SiO)x'SiPhMeVi
ViPh2SiO(Me2SiO)x(Ph2SiO)x'SiPh2Vi
ViMe2SiO(MePhSiO)xSiMe2Vi
MePhViSiO(MePhSiO)xSiMePhVi
Ph2ViSiO(MePhSiO)xSiPh2Vi
ViMe2SiO(Ph2SiO)x(PhMeSiO)x'SiMe2Vi
ViPhMeSiO(Ph2SiO)x(PhMeSiO)x'SiPhMeVi
ViPh2SiO(Ph2SiO)x(PhMeSiO)x'SiPh2Vi
HMe2SiO(Ph2SiO)ySiMe2H
HMePhSiO(Ph2SiO)ySiMePhH
HMeNaphSiO(Ph2SiO)ySiMeNaphH
HMePhSiO(Ph2SiO)y(MePhSiO)y'SiMePhH
HMePhSiO(Ph2SiO)y(Me2SiO)y'SiMePhH
(HMe2SiO1/2)c(PhSiO3/2)d
(HMePhSiO1/2)c(PhSiO3/2)d
(HMePhSiO1/2)c(NaphSiO3/2)d
(HMe2SiO1/2)c(NaphSiO3/2)d
(HMePhSiO1/2)c(HMe2SiO1/2)d(PhSiO3/2)e
(HMe2SiO1/2)c(Ph2SiO2/2)d(PhSiO3/2)e
(HMePhSiO1/2)c(Ph2SiO2/2)d(PhSiO3/2)e
(HMe2SiO1/2)c(Ph2SiO2/2)d(NaphSiO3/2)e
(HMePhSiO1/2)c(Ph2SiO2/2)d(NaphSiO3/2)e
(HMePhSiO1/2)c(HMe2SiO1/2)d(NaphSiO3/2)e
(HMePhSiO1/2)c(HMe2SiO1/2)d(Ph2SiO2/2)e(NaphSiO3/2)f
(HMePhSiO1/2)c(HMe2SiO1/2)d(Ph2SiO2/2)e(PhSiO3/2)f
本発明の半導体装置は、上記の硬化性シリコーン組成物の硬化物により半導体素子を封止してなることを特徴とする。このような本発明の半導体装置としては、発光ダイオード(LED)、フォトカプラー、CCDが例示される。また、半導体素子としては、発光ダイオード(LED)チップ、固体撮像素子が例示される。
反応容器に、フェニルトリメトキシシラン 400g(2.02mol)および1,3−ジビニル−1,3−ジフェニルジメチルジシロキサン 93.5g(0.30mol)を投入し、予め混合した後、トリフルオロメタンスルホン酸 1.74g(11.6mmol)を投入し、撹拌下、水 110g(6.1mol)を投入し、2時間加熱還流を行った。その後、85℃になるまで加熱常圧留去を行った。次いで、トルエン 89gおよび水酸化カリウム 1.18g(21.1mmol)を投入し、反応温度が120℃になるまで加熱常圧留去を行い、この温度で6時間反応させた。その後、室温まで冷却し、酢酸 0.68g(11.4mmol)を投入し、中和した。生成した塩を濾別した後、得られた透明な溶液から低沸点物を加熱減圧除去して、平均単位式:
(MePhViSiO1/2)0.23(PhSiO3/2)0.77
で表されるオルガノポリシロキサンレジン 347g(収率:98%)を調製した。
反応容器に、環状メチルビニルシロキサン 30g、白金−1,3−ジビニル−1,1,3,3−テトラメチルジシロキサン錯体のトルエン溶液 0.011gを加え、100℃に加熱した。次に、式:
反応容器に、環状メチルビニルシロキサン 20g、白金−1,3−ジビニル−1,1,3,3−テトラメチルジシロキサン錯体のトルエン溶液 0.013gを加え、100℃に加熱した。次に、式:
反応容器に、環状メチルビニルシロキサン 15g、白金−1,3−ジビニル−1,1,3,3−テトラメチルジシロキサン錯体のトルエン溶液 0.01gを加え、100℃に加熱した。次に、式:
反応容器に、テトラキスビニルジメチルシロキシシラン 30g、白金−1,3−ジビニル−1,1,3,3−テトラメチルジシロキサン錯体のトルエン溶液 0.01gを加え、80℃に加熱した。次に、式:
環状メチルハイドロジェンシロキサン 50g(0.835mol)、白金−1,3−ジビニル−1,1,3,3−テトラメチルジシロキサン錯体のトルエン溶液 9.8マイクロリットルの混合溶液に、アリルグリシジルエーテル 47.7g(0.418mol)を70℃で滴下した。滴下終了後、2時間加熱して、ガスクロマトグラフィーにより反応混合物中にアリルグリシジルエーテルがないことを確認した。その後、減圧下、低沸分を除去し、透明液体を得た。この液体は、29Si−NMR分析の結果、−32.9ppm、−17.7〜−16.2ppm付近にシグナルが見られることから、平均式:
下記の成分を用いて、表1に示した組成の硬化性シリコーン組成物を調製した。なお、表1中、(D)成分の含有量は、質量単位における、硬化性シリコーン組成物に対する白金金属の含有量(ppm)で示した。また、表1中のH/Viは、(A)成分と(C)成分に含まれるアルケニル基の合計1モルに対する、(B)成分に含まれるケイ素原子結合水素原子のモル数を示す。
(A−1)成分: 平均単位式:
(Me2ViSiO1/2)0.2(PhSiO3/2)0.8
で表されるオルガノポリシロキサン(ビニル基の含有量=4.1質量%)
(A−2)成分: 平均単位式:
(MePhViSiO1/2)0.23(PhSiO3/2)0.77
で表されるオルガノポリシロキサン(ビニル基の含有量=4.59質量%)
(A−3)成分: 25℃における粘度が3,000mPa・sである、分子鎖両末端ジメチルビニルシロキシ基封鎖メチルフェニルポリシロキサン(ビニル基の含有量=1.8質量%)
(B−1)成分: 式:
HMe2SiOPh2SiOSiMe2H
で表されるオルガノトリシロキサン
(C−1)成分: 実施例1で調製した接着促進剤
(C−2)成分: 実施例2で調製した接着促進剤
(C−3)成分: 実施例3で調製した接着促進剤
(C−4)成分: 実施例4で調製した接着促進剤
(C−5)成分: 25℃における粘度が30mPa・sである分子鎖両末端シラノール基封鎖メチルビニルシロキサンオリゴマーと3−グリシドキシプロピルトリメトキシシランの縮合反応物からなる接着付与剤(ビニル基の含有量=5.6質量%)
(C−6)成分: 平均式:
(C−7)成分: 参考例1で調製した接着促進剤
(D−1)成分: 白金−1,3−ジビニル−1,1,3,3−テトラメチルジシロキサン錯体の1,3,5,7−テトラメチル−1,3,5,7−テトラビニルシクロテトラシロキサンの溶液(白金として0.1質量%含有する溶液)
2枚のアルミニウム板、銀板、ポリフタルアミド板(幅25mm、長さ75mm、厚さ1mm)間にポリテトラフルオロエチレン樹脂製スペーサ(幅10mm、長さ20mm、厚さ1mm)を挟み込み、その隙間に硬化性シリコーン組成物を充填し、クリップで留め、150℃の熱風循環式オーブン中に1時間保持して硬化させた。室温に冷却後、クリップとスペーサを外して引張試験機により該アルミニウム板を水平反対方向に引っ張って、破壊時の応力を測定した。
底部が塞がった円筒状のポリフタルアミド(PPA)樹脂製枠材5(内径2.0mm、深さ1.0mm)の内底部の中心部に向かってリードフレーム2、3が側壁から延出しており、リードフレーム2の中央部上にLEDチップ1が載置されており、LEDチップ1とリードフレーム3はボンディングワイヤ4により電気的に接続している未封止の半導体装置内に、硬化性シリコーン組成物を脱泡してディスペンサーを用いて注入した。その後、1次硬化温度(70℃)で1時間、次いで、2次硬化温度(150℃)で1時間保持することにより硬化性シリコーン組成物を硬化させ、図1に示す表面実装型の発光ダイオード(LED)を作製した。
上記の方法で作製した16個の発光ダイオードを、市販の赤インクに浸漬し、50℃で24時間放置した。放置後、顕微鏡で赤インクのLED内への浸漬を調査し、次のように評価した。
◎: インクの浸漬が確認された発光ダイオードが2個以下である。
△: インクの浸漬が確認された発光ダイオードが3個〜8個である。
×: インクの浸漬が確認された発光ダイオードが9個以上である。
上記の方法で作製した16個の発光ダイオードを、1時間で−40℃⇔125℃の温度で1000サイクル放置し、通電してLEDの点灯を調査し、次のように評価した。
◎: 点灯が確認された発光ダイオードが14個以上である。
○: 点灯が確認された発光ダイオードが8個〜13個である。
△: 点灯が確認された発光ダイオードが7個以下である。
次の成分を表2に示す組成で均一に混合して実施例10〜11及び比較例6の硬化性シリコーン組成物を調製した。なお、表2中、(D)成分の含有量は、質量単位における、硬化性シリコーン組成物に対する白金金属の含有量(ppm)で示した。また、表2中のH/Viは、(A)成分と(C)成分に含まれるアルケニル基の合計1モルに対する、(B)成分に含まれるケイ素原子結合水素原子のモル数を示す。
(A−4)成分: 25℃における粘度が10,000mPa・sである、平均式:
Me2ViSiO(Me2SiO)500SiMe2Vi
で表されるオルガノポリシロキサン〔ビニル基の含有量0.15wt%)〕
(A−5)成分: 25℃において白色固体状で、トルエン可溶性である、平均単位式:
(Me2ViSiO1/2)0.10(Me3SiO1/2)0.40(SiO4/2)0.50(HO1/2)0.0001
で表される一分子中に2個以上のビニル基を有するオルガノポリシロキサンレジン(ビニル基の含有量=3.39量%)
(A−6)成分: 粘度300mPa・sであり、平均式:
Me2ViSiO(Me2SiO)150SiMe2Vi
で表されるオルガノポリシロキサン〔ビニル基の含有量0.48wt%)〕
(A−7)成分: 25℃において白色固体状で、トルエン可溶性である、平均単位式:
(Me2ViSiO1/2)0.06(Me3SiO1/2)0.44(SiO4/2)0.50(HO1/2)0.0001
で表される一分子中に2個以上のビニル基を有するオルガノポリシロキサンレジン(ビニル基の含有量=5.4質量%)
(A−8)成分: 平均式:
Me2ViSiO(Me2SiO)300SiMe2Vi
で表されるオルガノポリシロキサン〔ビニル基の含有量0.24wt%)〕
(B−3)成分: 25℃における粘度が5mPa・sである、平均式:
Me3SiO(MeHSiO)mSiMe3
で表される分子鎖両末端トリメチルシロキシ基封鎖ポリメチルハイドロジェンシロキサン(ケイ素原子結合水素原子含有量=1.4質量%)
(E−1)成分:1−エチニルシクロヘキサノール
2枚のアルミニウム板、銀板、ポリフタルアミド板(幅25mm、長さ75mm、厚さ1mm)間にポリテトラフルオロエチレン樹脂製スペーサ(幅10mm、長さ20mm、厚さ1mm)を挟み込み、その隙間に硬化性シリコーン組成物を充填し、クリップで留め、150℃の熱風循環式オーブン中に1時間保持して硬化させた。室温に冷却後、クリップとスペーサを外して引張試験機により該アルミニウム板を水平反対方向に引っ張って、破壊時の応力を測定した。
2 リードフレーム
3 リードフレーム
4 ボンディングワイヤ
5 枠材
6 硬化性シリコーン組成物の硬化物
Claims (8)
- 請求項1または2に記載の有機ケイ素化合物からなる接着促進剤。
- 請求項1または2に記載の有機ケイ素化合物を接着促進剤として含有する硬化性シリコーン組成物。
- ヒドロシリル化反応で硬化する請求項4に記載の硬化性シリコーン組成物。
- ヒドロシリル化反応で硬化する硬化性シリコーン組成物が、
(A)一分子中に少なくとも2個のアルケニル基を有するオルガノポリシロキサン 100質量部、
(B)一分子中に少なくとも2個のケイ素原子結合水素原子を有するオルガノハイドロジェンポリシロキサン{(A)成分と(C)成分に含まれるアルケニル基の合計1モルに対して、0.1〜10.0モルのケイ素原子結合水素原子を提供する量}、
(C)請求項1または2に記載の有機ケイ素化合物からなる接着促進剤 0.01〜50質量部、および
(D)ヒドロシリル化反応用触媒(本組成物の硬化を促進するに十分な量)
から少なくともなる、請求項5記載の硬化性シリコーン組成物。 - 半導体素子が、請求項4乃至6のいずれか1項に記載の硬化性シリコーン組成物の硬化物により封止されていることを特徴とする半導体装置。
- 半導体素子が発光素子である、請求項7に記載の半導体装置。
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US5840794A (en) * | 1997-01-10 | 1998-11-24 | Dow Corning Corporation | Alkoxy functional sealants with rapid development of green strength |
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JP3370313B2 (ja) * | 2000-07-17 | 2003-01-27 | コナミ株式会社 | ゲーム装置、ゲーム機の制御方法及び情報記憶媒体 |
DE60120432T2 (de) | 2000-08-28 | 2007-01-04 | Aprilis, Inc., Maynard | Holographisches speichermedium, das polyfunktionelle epoxidmonomere enthält, welche zur kationischen polymerisation fähig sind |
US8168737B2 (en) * | 2006-12-21 | 2012-05-01 | Dow Corning Corporation | Dual curing polymers and methods for their preparation and use |
JP5499774B2 (ja) | 2009-03-04 | 2014-05-21 | 信越化学工業株式会社 | 光半導体封止用組成物及びそれを用いた光半導体装置 |
JP6059472B2 (ja) * | 2012-09-07 | 2017-01-11 | 東レ・ダウコーニング株式会社 | 硬化性シリコーン組成物および光半導体装置 |
JP2014062198A (ja) | 2012-09-21 | 2014-04-10 | Dow Corning Toray Co Ltd | 硬化性シリコーン組成物、それを用いてなる半導体封止材および光半導体装置 |
JP2014077117A (ja) * | 2012-09-21 | 2014-05-01 | Dow Corning Toray Co Ltd | 高屈折性表面処理剤、それを用いて表面処理された微細部材および光学材料 |
JP5847054B2 (ja) | 2012-10-11 | 2016-01-20 | 株式会社神戸製鋼所 | 成膜装置 |
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- 2015-05-28 JP JP2016523157A patent/JP6628366B2/ja active Active
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EP3153516A4 (en) | 2018-03-07 |
TWI667247B (zh) | 2019-08-01 |
WO2015182143A1 (ja) | 2015-12-03 |
US10125242B2 (en) | 2018-11-13 |
CN106459101A (zh) | 2017-02-22 |
JPWO2015182143A1 (ja) | 2017-04-27 |
TW201602122A (zh) | 2016-01-16 |
CN106459101B (zh) | 2019-08-20 |
KR20170016392A (ko) | 2017-02-13 |
EP3153516A1 (en) | 2017-04-12 |
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