JP6627734B2 - セラミック電子部品及びその製造方法 - Google Patents
セラミック電子部品及びその製造方法 Download PDFInfo
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- JP6627734B2 JP6627734B2 JP2016242002A JP2016242002A JP6627734B2 JP 6627734 B2 JP6627734 B2 JP 6627734B2 JP 2016242002 A JP2016242002 A JP 2016242002A JP 2016242002 A JP2016242002 A JP 2016242002A JP 6627734 B2 JP6627734 B2 JP 6627734B2
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- 239000000919 ceramic Substances 0.000 title claims description 72
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000010410 layer Substances 0.000 claims description 182
- 238000007747 plating Methods 0.000 claims description 86
- 229910000859 α-Fe Inorganic materials 0.000 claims description 48
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 30
- 238000005204 segregation Methods 0.000 claims description 28
- 229910044991 metal oxide Inorganic materials 0.000 claims description 27
- 150000004706 metal oxides Chemical class 0.000 claims description 27
- 229910052725 zinc Inorganic materials 0.000 claims description 19
- 239000002344 surface layer Substances 0.000 claims description 18
- 229910052759 nickel Inorganic materials 0.000 claims description 17
- 230000008018 melting Effects 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 238000009713 electroplating Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 239000000523 sample Substances 0.000 description 13
- 229910017518 Cu Zn Inorganic materials 0.000 description 12
- 229910017752 Cu-Zn Inorganic materials 0.000 description 12
- 229910017943 Cu—Zn Inorganic materials 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 239000004020 conductor Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- 229910018605 Ni—Zn Inorganic materials 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 239000010408 film Substances 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 239000002003 electrode paste Substances 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 230000001678 irradiating effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 238000004445 quantitative analysis Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/29—Terminals; Tapping arrangements for signal inductances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/04—Fixed inductances of the signal type with magnetic core
- H01F17/045—Fixed inductances of the signal type with magnetic core with core of cylindric geometry and coil wound along its longitudinal axis, i.e. rod or drum core
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/24—Magnetic cores
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/24—Magnetic cores
- H01F27/255—Magnetic cores made from particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/29—Terminals; Tapping arrangements for signal inductances
- H01F27/292—Surface mounted devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
- H01F41/10—Connecting leads to windings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
- H01G4/2325—Terminals electrically connecting two or more layers of a stacked or rolled capacitor characterised by the material of the terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
- H01F1/12—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials
- H01F1/34—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials non-metallic substances, e.g. ferrites
- H01F1/342—Oxides
- H01F1/344—Ferrites, e.g. having a cubic spinel structure (X2+O)(Y23+O3), e.g. magnetite Fe3O4
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/252—Terminals the terminals being coated on the capacitive element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Coils Or Transformers For Communication (AREA)
- Soft Magnetic Materials (AREA)
- Manufacturing Cores, Coils, And Magnets (AREA)
Description
次に、複数種類のフェライトを使用し、表1のようにレーザ条件を変えながら改質層を形成したときの実験結果を示す。表1において、ピッチとは、レーザLを連続照射しながら直線状に複数列走査した場合において、隣接する列のレーザ光の照射間隔である。試料1〜4がNi−Cu−Zn系フェライト、試料5がNi−Zn系フェライト、試料6がMn−Zn系フェライトを使用した場合である。YVO4レーザを使用し、レーザエネルギーを85〜500mJ/mm2で変化させた。
10 セラミック素体(コア)
11 巻芯部
12、13 鍔部
12a 底面
12b 側面
14 改質層
20 ワイヤ
21、22 外部電極
L レーザ
Claims (8)
- 金属酸化物を含有したセラミック素体と、
前記セラミック素体の表層部の一部に形成され、前記金属酸化物を溶融・凝固させた改質層と、
前記改質層上に形成されためっき金属からなる電極と、を備え、
前記セラミック素体はCuを含有するフェライトであり、
前記改質層では、前記Cuが筋状又は網目状に偏析している、
ことを特徴とするセラミック電子部品。 - 前記改質層では、Cuが上層部に偏析している、請求項1に記載のセラミック電子部品。
- 前記改質層では、上層部にCuの偏析層を有し、下層部にCuが偏析していない未偏析層を有する、請求項2に記載のセラミック電子部品。
- 前記セラミック素体はCu,Zn,Niを含有するフェライトであって、
前記改質層では、前記Cuの偏析を避けるようにZn,Niが存在している、請求項1乃至3のいずれか1項に記載のセラミック電子部品。 - 前記改質層の厚みは1μm以上である、請求項1乃至4のいずれか1項に記載のセラミック電子部品。
- 金属酸化物を含有するセラミック素体を準備する工程と、
前記セラミック素体の表層部の一部に、前記金属酸化物を溶融・凝固させ、前記金属酸化物を構成する金属元素の少なくとも1つが偏析している改質層を形成する工程と、
前記改質層上に電極をめっき処理により形成する工程と、を備え、
前記セラミック素体はCuを含有するフェライトであり、
前記改質層では、前記Cuが筋状又は網目状に偏析している、
ことを特徴とするセラミック電子部品の製造方法。 - 前記改質層を形成する工程は、レーザ照射、電子ビーム照射、又はイメージ炉による局所加熱によって実行される、請求項6に記載のセラミック電子部品の製造方法。
- 前記めっき処理は電解めっき法により実行される、請求項6又は7に記載のセラミック電子部品の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016242002A JP6627734B2 (ja) | 2016-12-14 | 2016-12-14 | セラミック電子部品及びその製造方法 |
US15/836,494 US20180166202A1 (en) | 2016-12-14 | 2017-12-08 | Ceramic electronic component and manufacturing method thereof |
KR1020170168222A KR102102508B1 (ko) | 2016-12-14 | 2017-12-08 | 세라믹 전자 부품 및 그 제조 방법 |
CN201711306007.6A CN108231377B (zh) | 2016-12-14 | 2017-12-11 | 陶瓷电子部件及其制造方法 |
TW106143557A TWI656547B (zh) | 2016-12-14 | 2017-12-12 | 陶瓷電子零件及其製造方法 |
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JP2016242002A JP6627734B2 (ja) | 2016-12-14 | 2016-12-14 | セラミック電子部品及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2018098372A JP2018098372A (ja) | 2018-06-21 |
JP6627734B2 true JP6627734B2 (ja) | 2020-01-08 |
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JP2016242002A Active JP6627734B2 (ja) | 2016-12-14 | 2016-12-14 | セラミック電子部品及びその製造方法 |
Country Status (5)
Country | Link |
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US (1) | US20180166202A1 (ja) |
JP (1) | JP6627734B2 (ja) |
KR (1) | KR102102508B1 (ja) |
CN (1) | CN108231377B (ja) |
TW (1) | TWI656547B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7286936B2 (ja) * | 2018-10-05 | 2023-06-06 | Tdk株式会社 | コイル装置、パルストランスおよび電子部品 |
WO2020217709A1 (ja) * | 2019-04-25 | 2020-10-29 | 株式会社村田製作所 | セラミック電子部品 |
CN111292951B (zh) * | 2020-02-28 | 2022-03-22 | 安徽大地熊新材料股份有限公司 | 一种提高烧结钕铁硼磁体矫顽力的方法 |
KR102575046B1 (ko) * | 2020-09-04 | 2023-09-06 | 한국전자기술연구원 | 세라믹 트랜듀서 전자 부품 및 이의 전극 형성 방법 |
CN116745870A (zh) * | 2021-02-01 | 2023-09-12 | 株式会社村田制作所 | 电子部件 |
JP7491411B2 (ja) * | 2021-02-01 | 2024-05-28 | 株式会社村田製作所 | 電子部品 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0712991B2 (ja) * | 1986-09-26 | 1995-02-15 | 株式会社東芝 | セラミツクス部材の選択めつき方法 |
JPS6433084A (en) * | 1987-07-29 | 1989-02-02 | Tdk Corp | Partial modification method for oxide ceramic surface |
US5618611A (en) * | 1994-06-30 | 1997-04-08 | Lucent Technologies Inc. | Metallization of ferrites through surface reduction |
EP0698590B1 (en) * | 1994-08-23 | 2003-10-22 | AT&T Corp. | Metallization of ceramics through application of an adherent reducible layer |
JPH11176685A (ja) * | 1997-12-12 | 1999-07-02 | Toko Inc | インダクタンス素子の製造方法 |
JP2000243629A (ja) * | 1998-12-21 | 2000-09-08 | Murata Mfg Co Ltd | インダクタおよびその製造方法 |
US6437676B1 (en) * | 1999-06-29 | 2002-08-20 | Matsushita Electric Industrial Co., Ltd. | Inductance element |
US7152291B2 (en) | 2002-04-15 | 2006-12-26 | Avx Corporation | Method for forming plated terminations |
JP2005057104A (ja) * | 2003-08-06 | 2005-03-03 | Nec Tokin Corp | チョークコイル及びその製造方法 |
JP4421436B2 (ja) * | 2004-09-30 | 2010-02-24 | 太陽誘電株式会社 | 面実装コイル部品 |
JP2009064896A (ja) * | 2007-09-05 | 2009-03-26 | Taiyo Yuden Co Ltd | 巻線型電子部品 |
US8115587B2 (en) * | 2008-03-28 | 2012-02-14 | Murata Manufacturing Co., Ltd. | NTC thermistor ceramic, method for producing NTC thermistor ceramic, and NTC thermistor |
KR102123038B1 (ko) * | 2013-07-31 | 2020-06-16 | 엘지디스플레이 주식회사 | 구리 합금층의 표면 안정화 방법 |
WO2016042884A1 (ja) * | 2014-09-19 | 2016-03-24 | 株式会社村田製作所 | チップ型セラミック半導体電子部品 |
-
2016
- 2016-12-14 JP JP2016242002A patent/JP6627734B2/ja active Active
-
2017
- 2017-12-08 KR KR1020170168222A patent/KR102102508B1/ko active IP Right Grant
- 2017-12-08 US US15/836,494 patent/US20180166202A1/en not_active Abandoned
- 2017-12-11 CN CN201711306007.6A patent/CN108231377B/zh active Active
- 2017-12-12 TW TW106143557A patent/TWI656547B/zh active
Also Published As
Publication number | Publication date |
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US20180166202A1 (en) | 2018-06-14 |
TWI656547B (zh) | 2019-04-11 |
TW201830431A (zh) | 2018-08-16 |
CN108231377A (zh) | 2018-06-29 |
JP2018098372A (ja) | 2018-06-21 |
KR102102508B1 (ko) | 2020-04-20 |
KR20180068865A (ko) | 2018-06-22 |
CN108231377B (zh) | 2020-06-12 |
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