JP6620686B2 - 弾性波装置 - Google Patents
弾性波装置 Download PDFInfo
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- JP6620686B2 JP6620686B2 JP2016126548A JP2016126548A JP6620686B2 JP 6620686 B2 JP6620686 B2 JP 6620686B2 JP 2016126548 A JP2016126548 A JP 2016126548A JP 2016126548 A JP2016126548 A JP 2016126548A JP 6620686 B2 JP6620686 B2 JP 6620686B2
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- wave device
- piezoelectric substrate
- idt electrode
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- wiring
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- 239000000758 substrate Substances 0.000 claims description 65
- 230000010287 polarization Effects 0.000 claims description 54
- 230000000694 effects Effects 0.000 description 20
- 238000001816 cooling Methods 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 11
- 230000005684 electric field Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000005549 size reduction Methods 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/703—Networks using bulk acoustic wave devices
- H03H9/706—Duplexers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02921—Measures for preventing electric discharge due to pyroelectricity
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02992—Details of bus bars, contact pads or other electrical connections for finger electrodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1071—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1092—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14538—Formation
- H03H9/14541—Multilayer finger or busbar electrode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
2…圧電基板
2a…第1の主面
2a1〜2a4…第1〜第4の端縁
3…IDT電極
4a,4b…第1,第2の配線
5…入力端子
6…アンテナ端子
7…グラウンド端子
8…支持部材
8a…開口部
9…カバー部材
10…弾性波装置
10A…弾性波装置実装構造体
12…実装基板
13…封止樹脂
15…電極ランド
18…ビア電極
19…バンプ
24…配線
102…圧電基板
102a…第1の主面
P1〜P4…並列腕共振子
S1〜S5…直列腕共振子
Claims (7)
- 主面を有し、かつ前記主面に対する傾斜角度がθ°であり、弾性波伝搬方向に対して垂直である分極軸方向を有する圧電基板と、
前記圧電基板の前記主面上に設けられているIDT電極と、
前記圧電基板の前記主面上に設けられており、かつ前記主面の端縁と前記IDT電極との間に設けられている、少なくとも1つの配線と、
を備え、
前記主面の前記端縁から前記IDT電極までの距離を距離aとしたときに、a≦316|cos(θ)|μmであり、
前記分極軸方向における、前記圧電基板の前記主面に対する傾斜角度θ°が30°以上、65°以下であり、
前記端縁と前記IDT電極とを結ぶ方向に沿う前記配線の寸法を幅とし、前記配線が1つである場合には前記配線の幅をbとし、前記配線が複数である場合には前記複数の配線の幅の合計をbとしたときに、b≧28μmである、弾性波装置。 - 前記圧電基板がLiTaO3からなる、請求項1に記載の弾性波装置。
- 前記端縁から前記IDT電極までの距離aが、a≦235μmである、請求項1または2に記載の弾性波装置。
- 前記圧電基板の前記端縁が、前記分極軸方向と交叉する方向に延びている、請求項1〜3のいずれか1項に記載の弾性波装置。
- 前記圧電基板の前記端縁が、前記分極軸方向に直交する方向に延びている、請求項4に記載の弾性波装置。
- 少なくとも1つの前記配線が、グラウンド電位及び前記IDT電極のうち一方に電気的に接続されている、請求項1〜5のいずれか1項に記載の弾性波装置。
- 少なくとも1つの前記配線が、グラウンド電位及び前記IDT電極に電気的に接続されていない、請求項1〜6のいずれか1項に記載の弾性波装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016126548A JP6620686B2 (ja) | 2016-06-27 | 2016-06-27 | 弾性波装置 |
US15/604,740 US10181838B2 (en) | 2016-06-27 | 2017-05-25 | Elastic wave apparatus |
KR1020170076667A KR101948688B1 (ko) | 2016-06-27 | 2017-06-16 | 탄성파 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016126548A JP6620686B2 (ja) | 2016-06-27 | 2016-06-27 | 弾性波装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018006799A JP2018006799A (ja) | 2018-01-11 |
JP6620686B2 true JP6620686B2 (ja) | 2019-12-18 |
Family
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016126548A Active JP6620686B2 (ja) | 2016-06-27 | 2016-06-27 | 弾性波装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10181838B2 (ja) |
JP (1) | JP6620686B2 (ja) |
KR (1) | KR101948688B1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023112652A1 (ja) * | 2021-12-15 | 2023-06-22 | 株式会社村田製作所 | 弾性波装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3736045A (en) * | 1971-12-27 | 1973-05-29 | Ibm | Fast optical guided wave modulator and digital deflector |
JPS62263711A (ja) * | 1986-05-09 | 1987-11-16 | Matsushita Electric Ind Co Ltd | 弾性波装置 |
JPH05206776A (ja) * | 1992-01-30 | 1993-08-13 | Hitachi Ltd | 弾性表面波素子とその製造方法 |
JP3303772B2 (ja) * | 1998-04-20 | 2002-07-22 | 株式会社村田製作所 | 圧電体素子 |
JP2001257555A (ja) | 2000-03-10 | 2001-09-21 | Murata Mfg Co Ltd | 弾性表面波素子 |
JP2002044785A (ja) * | 2000-07-21 | 2002-02-08 | Daicel Chem Ind Ltd | 圧電振動子 |
JP2003258601A (ja) * | 2001-12-28 | 2003-09-12 | Seiko Epson Corp | 弾性表面波装置およびそれを用いた通信機器 |
US7550902B2 (en) * | 2003-06-03 | 2009-06-23 | Murata Manufacturing Co., Ltd. | Electronic component device |
JP2005094254A (ja) * | 2003-09-16 | 2005-04-07 | Kyocera Corp | 圧電共振素子、圧電共振子及びフイルタ並びに複合基板 |
JP4471725B2 (ja) * | 2004-04-26 | 2010-06-02 | 京セラ株式会社 | 圧電共振素子、圧電共振子及びフィルタ並びに複合基板 |
JP4637669B2 (ja) | 2005-07-13 | 2011-02-23 | 京セラ株式会社 | フィルタ装置とこれを用いたマルチバンドフィルタ、分波器及び通信装置 |
US7919764B2 (en) * | 2008-05-06 | 2011-04-05 | The United States Of America As Represented By The Secretary Of The Army | Method and apparatus for enhanced terahertz radiation from high stacking fault density |
JP5650553B2 (ja) | 2011-02-04 | 2015-01-07 | 太陽誘電株式会社 | 弾性波デバイスの製造方法 |
JP6115646B2 (ja) * | 2013-09-06 | 2017-04-19 | 株式会社村田製作所 | 弾性波共振子、弾性波フィルタ装置及びデュプレクサ |
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2016
- 2016-06-27 JP JP2016126548A patent/JP6620686B2/ja active Active
-
2017
- 2017-05-25 US US15/604,740 patent/US10181838B2/en active Active
- 2017-06-16 KR KR1020170076667A patent/KR101948688B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
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US20170373670A1 (en) | 2017-12-28 |
KR101948688B1 (ko) | 2019-02-18 |
JP2018006799A (ja) | 2018-01-11 |
KR20180001456A (ko) | 2018-01-04 |
US10181838B2 (en) | 2019-01-15 |
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