JP6620328B2 - 深紫外光発生用ターゲット、深紫外光源および深紫外発光素子 - Google Patents

深紫外光発生用ターゲット、深紫外光源および深紫外発光素子 Download PDF

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JP6620328B2
JP6620328B2 JP2015177099A JP2015177099A JP6620328B2 JP 6620328 B2 JP6620328 B2 JP 6620328B2 JP 2015177099 A JP2015177099 A JP 2015177099A JP 2015177099 A JP2015177099 A JP 2015177099A JP 6620328 B2 JP6620328 B2 JP 6620328B2
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ultraviolet light
deep ultraviolet
layer
light emitting
substrate
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JP2017052855A (ja
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範子 黒瀬
範子 黒瀬
青柳　克信
克信 青柳
真也 織田
真也 織田
俊実 人羅
俊実 人羅
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Flosfia Inc
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JP2015177099A 2015-09-08 2015-09-08 深紫外光発生用ターゲット、深紫外光源および深紫外発光素子 Active JP6620328B2 (ja)

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JP6774592B2 (ja) * 2015-09-08 2020-10-28 株式会社Flosfia 深紫外発光素子
JP6934852B2 (ja) * 2018-12-18 2021-09-15 信越化学工業株式会社 酸化ガリウム膜の製造方法
JP2023055415A (ja) * 2021-10-06 2023-04-18 学校法人 工学院大学 紫外線光源、オゾン発生装置、紫外線の放射方法

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JP2008303119A (ja) * 2007-06-08 2008-12-18 Nippon Light Metal Co Ltd 高機能性Ｇａ２Ｏ３単結晶膜及びその製造方法
JP6390052B2 (ja) * 2014-08-29 2018-09-19 高知県公立大学法人 量子井戸構造および半導体装置
JP6422159B2 (ja) * 2015-02-25 2018-11-14 国立研究開発法人物質・材料研究機構 α−Ｇａ２Ｏ３単結晶、α−Ｇａ２Ｏ３の製造方法、および、それを用いた半導体素子
JP6620921B2 (ja) * 2015-02-25 2019-12-18 株式会社Flosfia 紫外線発光材料およびその製造方法
JP6774592B2 (ja) * 2015-09-08 2020-10-28 株式会社Flosfia 深紫外発光素子

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