JP6607737B2 - 磁気素子、スキルミオンメモリ及び演算処理装置 - Google Patents

磁気素子、スキルミオンメモリ及び演算処理装置 Download PDF

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JP6607737B2
JP6607737B2 JP2015163431A JP2015163431A JP6607737B2 JP 6607737 B2 JP6607737 B2 JP 6607737B2 JP 2015163431 A JP2015163431 A JP 2015163431A JP 2015163431 A JP2015163431 A JP 2015163431A JP 6607737 B2 JP6607737 B2 JP 6607737B2
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skyrmion
magnetic
magnetic body
phase
control unit
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JP2017041580A (ja
JP2017041580A5 (enExample
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広志 大池
史敬 賀川
好紀 十倉
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RIKEN
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/10—Complex mathematical operations
    • G06F17/16—Matrix or vector computation, e.g. matrix-matrix or matrix-vector multiplication, matrix factorization
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Optimization (AREA)
  • Data Mining & Analysis (AREA)
  • Mathematical Analysis (AREA)
  • Computational Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Pure & Applied Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Algebra (AREA)
  • Databases & Information Systems (AREA)
  • Software Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Computing Systems (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
JP2015163431A 2015-08-21 2015-08-21 磁気素子、スキルミオンメモリ及び演算処理装置 Active JP6607737B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2015163431A JP6607737B2 (ja) 2015-08-21 2015-08-21 磁気素子、スキルミオンメモリ及び演算処理装置
US15/168,254 US9704550B2 (en) 2015-08-21 2016-05-31 Magnetic element, skyrmion memory and arithmetic processing unit

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JP2015163431A JP6607737B2 (ja) 2015-08-21 2015-08-21 磁気素子、スキルミオンメモリ及び演算処理装置

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JP2017041580A JP2017041580A (ja) 2017-02-23
JP2017041580A5 JP2017041580A5 (enExample) 2018-09-27
JP6607737B2 true JP6607737B2 (ja) 2019-11-20

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JP (1) JP6607737B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102099068B1 (ko) * 2014-10-28 2020-04-08 고쿠리쓰 겐큐 가이하쓰 호징 리가가쿠 겐큐소 자기 소자, 스커미온 메모리, 스커미온 메모리 장치, 스커미온 메모리 탑재 고체 전자 장치, 데이터 기록 장치, 데이터 처리 장치 및 통신 장치
WO2017024253A1 (en) * 2015-08-05 2017-02-09 The Regents Of The University Of California Ground state artificial skyrmion lattices at room temperature
CN107332554A (zh) * 2017-06-09 2017-11-07 香港中文大学（深圳） 基于磁性斯格明子的或门及其控制和应用方法
JP6948229B2 (ja) * 2017-11-09 2021-10-13 株式会社日立製作所 熱電変換装置および熱輸送システム
CN110211614B (zh) * 2019-06-13 2021-03-02 湖北大学 一种基于磁性斯格明子的锁存器与触发器及控制方法
CN110535460B (zh) * 2019-09-23 2021-08-24 四川师范大学 一种基于反铁磁斯格明子的新型逻辑门电路
CN111951846B (zh) * 2020-08-14 2022-10-28 长江存储科技有限责任公司 赛道存储器及其读写方法、赛道存储装置
US12170162B2 (en) * 2020-12-08 2024-12-17 Jannier M. Roiz-Wilson Warped magnetic tunnel junctions and bit-patterned media
CN114335332B (zh) * 2021-11-29 2025-09-05 华南师范大学 一种利用光致应变诱导产生及擦除磁性斯格明子的方法及装置
WO2025023903A1 (en) 2023-07-27 2025-01-30 Koc Universitesi A scalable logic and memory device based on magnetic skyrmions

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006221712A (ja) 2005-02-09 2006-08-24 Ricoh Co Ltd 相変化型光記録媒体とその記録方法及び転移線速の評価方法
JP6116043B2 (ja) * 2012-10-19 2017-04-19 国立研究開発法人理化学研究所 スキルミオン駆動方法およびマイクロ素子
WO2015118579A1 (ja) * 2014-02-10 2015-08-13 独立行政法人理化学研究所 スキルミオンの駆動方法
KR101889880B1 (ko) * 2014-08-07 2018-09-20 고쿠리쓰 겐큐 가이하쓰 호징 리가가쿠 겐큐소 자기 저장 매체 및 데이터 기록 장치
JP6436348B2 (ja) * 2015-01-26 2018-12-12 国立研究開発法人理化学研究所 磁気素子、スキルミオンメモリ、スキルミオンメモリデバイス、データ処理装置、スキルミオンメモリ搭載固体電子デバイス、データ記録装置、データ処理装置及びデータ通信装置

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US9704550B2 (en) 2017-07-11
US20170053686A1 (en) 2017-02-23
JP2017041580A (ja) 2017-02-23

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