JP6605718B2 - 導電性ペースト、電極接続構造、及び、電極接続構造の製造方法 - Google Patents
導電性ペースト、電極接続構造、及び、電極接続構造の製造方法 Download PDFInfo
- Publication number
- JP6605718B2 JP6605718B2 JP2018514741A JP2018514741A JP6605718B2 JP 6605718 B2 JP6605718 B2 JP 6605718B2 JP 2018514741 A JP2018514741 A JP 2018514741A JP 2018514741 A JP2018514741 A JP 2018514741A JP 6605718 B2 JP6605718 B2 JP 6605718B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- conductive paste
- electrode pad
- substrate
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/06—Metallic powder characterised by the shape of the particles
- B22F1/068—Flake-like particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
- B22F1/107—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
- B22F7/064—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts using an intermediate powder layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/742—Apparatus for manufacturing bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2301/00—Metallic composition of the powder or its coating
- B22F2301/25—Noble metals, i.e. Ag Au, Ir, Os, Pd, Pt, Rh, Ru
- B22F2301/255—Silver or gold
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1131—Manufacturing methods by local deposition of the material of the bump connector in liquid form
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/115—Manufacturing methods by chemical or physical modification of a pre-existing or pre-deposited material
- H01L2224/11505—Sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13139—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
- H01L2224/171—Disposition
- H01L2224/17104—Disposition relative to the bonding areas, e.g. bond pads
- H01L2224/17106—Disposition relative to the bonding areas, e.g. bond pads the bump connectors being bonded to at least one common bonding area
- H01L2224/17107—Disposition relative to the bonding areas, e.g. bond pads the bump connectors being bonded to at least one common bonding area the bump connectors connecting two common bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
- H01L2224/171—Disposition
- H01L2224/1718—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/17181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7515—Means for applying permanent coating, e.g. in-situ coating
- H01L2224/75151—Means for direct writing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75743—Suction holding means
- H01L2224/75745—Suction holding means in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81192—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/81201—Compression bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/8184—Sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81908—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving monitoring, e.g. feedback loop
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9212—Sequential connecting processes
- H01L2224/92122—Sequential connecting processes the first connecting process involving a bump connector
- H01L2224/92125—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/201—Temperature ranges
- H01L2924/20105—Temperature range 150 C=<T<200 C, 423.15 K =< T < 473.15K
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/201—Temperature ranges
- H01L2924/20107—Temperature range 250 C=<T<300 C, 523.15K =<T< 573.15K
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Dispersion Chemistry (AREA)
- Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Nanotechnology (AREA)
- Wire Bonding (AREA)
- Conductive Materials (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Description
(導電性ペースト及び電気導電体の概略)
以下、本発明の実施の形態について、詳細に説明する。本実施形態に係る電気接続体では、基板と、該基板上に搭載される電子部品との間の電気接続に導電性ペーストとして形状保持性が高いものを用いる。そして、導電性ペーストをディスペンサで吐出し、その形状を維持した状態で焼結させる。これにより、電気接続体を得る。具体的には、導電性ペーストとしてダイラタンシー性をもったものを使用する。
ここで、以下の説明では、半導体チップと回路基板とを接続する導電性ペーストを接続部(電気接続部)と称する場合がある。
図1〜図11を用いて、本発明の実施形態1に係る実験例について説明する。
図8はニードルをアレイ状に並べた例を示す図である。図8の(a)は円形のニードル203‐1をアレイ状に並べた例を示す図であり、図8の(b)は六角形のニードル203‐2をアレイ状に並べた例を示す図である。
図9は、導電性ペースト202で電極パッド101と電極パッド201とを接続した後、樹脂材料205にて、電極パッド101と電極パッド201との間の領域であって、複数の導電性ペースト202である接続部以外の部分を充填した様子を表す断面図である。
図10は、バックコンタクトを必要とする素子などで、半導体チップ100の裏面電極207と、回路基板200の電極パッド201とを接続する接続子(第2基板)300を、複数の導電性ペースト(第2導電性材料)204からなる接続部で接続している様子を表す断面図である。導電性ペースト204も導電性ペースト202と同様の材料を用いた。
図11は、フリップチップボンダーに吸着させた半導体チップ100を回路基板200に押し下げていった時の、導電性ペースト202・204の反力の推移を示す図である。ボンダーのチップ移動量と反力でプロットしている。
本発明の態様1に係る導電性ペースト202は、基板(回路基板200)と該基板(回路基板200)上に搭載される電子部品(半導体チップ100)との間の電気接続に使用可能な導電性ペースト202であって、導電粉末とアルコール系液体成分とを含み、接着剤を含まず、前記導電性粉末は、厚さが0.05μm以上0.1μm以下であり、当該厚さ方向に対して垂直に交わる面内の最大の差し渡しを代表長さとしたとき、当該代表長さが5μm以上10μm以下である導電粒子を含み、前記アルコール系液体成分は、前記導電性ペースト202における重量比が、8%以上20%以下であることを特徴とする。
100 半導体チップ(素子、電子部品)
101、201 電極パッド
104 吸着ヘッド
200 回路基板(基板)
202 導電性ペースト(突起電極)
203 ニードル
204 導電性ペースト(突起電極)
205 樹脂材料
207 裏面電極
300 接続子(第2基板)
Claims (3)
- 基板と該基板上に搭載される電子部品との間の電気接続に使用可能な導電性ペーストであって、
導電粉末とアルコール系液体成分とを含み、接着剤を含まず、
前記導電粉末は、厚さが0.05μm以上0.1μm以下であり、当該厚さ方向に対して垂直に交わる面内の最大の差し渡しを代表長さとしたとき、当該代表長さが5μm以上10μm以下である導電粒子を含み、
前記アルコール系液体成分は、前記導電性ペーストにおける重量比が、8%以上20%以下であることを特徴とする導電性ペースト。 - 請求項1に記載の導電性ペーストを、前記基板の電極パッドと前記電子部品の電極パッドとを接続する電気接続部に用いる電極接続構造であって、
前記基板の電極パッドと前記電子部品の電極パッドとを接続する前記導電性ペーストが硬化後の電気接続部は、前記基板の電極パッドと前記電子部品との接続方向に垂直な断面形状が略同一形状で、断面積において変動が20%以内であることを特徴とする電極接続構造。 - 請求項2に記載の電極接続構造の製造方法であって、
前記基板の電極パッド上に前記導電性ペーストで突起電極を形成する工程と、
前記電子部品の電極パッドを、前記基板の電極パッド上の突起電極に接触させ、当該電子部品の電極パッドを一定の速度で前記基板の電極パッドに近づく方向に相対移動させ、前記突起電極から、予め定め値の反力を受けると、前記電子部品の電極パッドの相対移動を停止する工程と、
前記電子部品の電極パッドの移動を停止した後、前記突起電極を硬化することで、前記基板の電極パッドと、前記電子部品の電極パッドとを接続する工程とを含むことを特徴とする電極接続構造の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016091804 | 2016-04-28 | ||
JP2016091804 | 2016-04-28 | ||
PCT/JP2017/017032 WO2017188446A1 (ja) | 2016-04-28 | 2017-04-28 | 導電性ペースト、電極接続構造、及び、電極接続構造の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2017188446A1 JPWO2017188446A1 (ja) | 2019-04-04 |
JP6605718B2 true JP6605718B2 (ja) | 2019-11-13 |
Family
ID=60159724
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018514741A Expired - Fee Related JP6605718B2 (ja) | 2016-04-28 | 2017-04-28 | 導電性ペースト、電極接続構造、及び、電極接続構造の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10651143B2 (ja) |
JP (1) | JP6605718B2 (ja) |
CN (1) | CN109313955B (ja) |
WO (1) | WO2017188446A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020102316A (ja) * | 2018-12-20 | 2020-07-02 | Dic株式会社 | ピラー用導電性ペースト |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6177729B1 (en) * | 1999-04-03 | 2001-01-23 | International Business Machines Corporation | Rolling ball connector |
US6317023B1 (en) * | 1999-10-15 | 2001-11-13 | E. I. Du Pont De Nemours And Company | Method to embed passive components |
JP2001257239A (ja) * | 2000-03-13 | 2001-09-21 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP2001319523A (ja) * | 2000-05-10 | 2001-11-16 | Jsr Corp | 導電性ペースト組成物 |
WO2005093816A1 (en) * | 2004-03-05 | 2005-10-06 | Infineon Technologies Ag | Semiconductor device for radio frequency applications and method for making the same |
JP4362742B2 (ja) * | 2005-09-22 | 2009-11-11 | ニホンハンダ株式会社 | ペースト状金属粒子組成物の固化方法、金属製部材の接合方法およびプリント配線板の製造方法 |
WO2008117513A1 (ja) * | 2007-03-23 | 2008-10-02 | Panasonic Corporation | 導電性バンプとその製造方法および電子部品実装構造体 |
JP5207281B2 (ja) * | 2008-01-17 | 2013-06-12 | 国立大学法人大阪大学 | 導電性ペースト |
US9449900B2 (en) * | 2009-07-23 | 2016-09-20 | UTAC Headquarters Pte. Ltd. | Leadframe feature to minimize flip-chip semiconductor die collapse during flip-chip reflow |
KR20140106548A (ko) * | 2011-11-29 | 2014-09-03 | 가부시키가이샤 구라레 | 도전 페이스트 및 적층 세라믹 콘덴서 |
JP5425962B2 (ja) * | 2012-04-04 | 2014-02-26 | ニホンハンダ株式会社 | 加熱焼結性銀粒子の製造方法、ペースト状銀粒子組成物、固形状銀の製造方法、金属製部材の接合方法、プリント配線板の製造方法および電気回路接続用バンプの製造方法 |
JP5558547B2 (ja) * | 2012-12-05 | 2014-07-23 | ニホンハンダ株式会社 | ペースト状金属微粒子組成物、固形状金属または固形状金属合金の製造方法、金属製部材の接合方法、プリント配線板の製造方法および電気回路接続用バンプの製造方法 |
JP6096143B2 (ja) * | 2013-09-04 | 2017-03-15 | Dowaエレクトロニクス株式会社 | 銀被覆フレーク状銅粉及びその製造方法、並びに導電性ペースト |
JP2015056496A (ja) | 2013-09-11 | 2015-03-23 | 株式会社デンソー | 回路基板 |
US20150197645A1 (en) * | 2014-01-16 | 2015-07-16 | E I Du Pont De Nemours And Company | Method of manufacturing non-firing type electrode |
JP2016093830A (ja) | 2014-11-14 | 2016-05-26 | 千住金属工業株式会社 | 無残渣型継手形成用Agナノペースト |
-
2017
- 2017-04-28 US US16/097,050 patent/US10651143B2/en active Active
- 2017-04-28 JP JP2018514741A patent/JP6605718B2/ja not_active Expired - Fee Related
- 2017-04-28 CN CN201780026376.1A patent/CN109313955B/zh active Active
- 2017-04-28 WO PCT/JP2017/017032 patent/WO2017188446A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US20190157229A1 (en) | 2019-05-23 |
JPWO2017188446A1 (ja) | 2019-04-04 |
US10651143B2 (en) | 2020-05-12 |
CN109313955A (zh) | 2019-02-05 |
WO2017188446A1 (ja) | 2017-11-02 |
CN109313955B (zh) | 2020-06-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10589502B2 (en) | Anisotropic conductive film, connected structure, and method for manufacturing a connected structure | |
TWI707485B (zh) | 半導體裝置之製造方法 | |
JPWO2006126361A1 (ja) | ハンダバンプ形成方法および半導体素子の実装方法 | |
JP2006339057A (ja) | 樹脂金属複合導電材料、その製造方法およびそれを用いた電子デバイス | |
JP2008218474A (ja) | ボンディング装置及び方法 | |
JP5768888B2 (ja) | モジュールの製造方法および端子集合体 | |
US20140290059A1 (en) | Anisotropic conductive film and method of making conductive connection | |
WO2012081255A1 (ja) | 加熱接合用材料、加熱接合用コーティング材料、コーティング物、及び電子部品の接合方法。 | |
US10806021B2 (en) | Packaged microelectronic component mounting using sinter attachment | |
JP6605718B2 (ja) | 導電性ペースト、電極接続構造、及び、電極接続構造の製造方法 | |
JP2002026070A (ja) | 半導体装置およびその製造方法 | |
CN108883490B (zh) | 接合体的制造方法 | |
TWI436700B (zh) | Crimping device, crimping method, structure and pressing plate | |
JP7228422B2 (ja) | 焼結接合用シート、基材付き焼結接合用シート、および焼結接合用材料層付き半導体チップ | |
JP6769721B2 (ja) | 電子部品、異方性接続構造体、電子部品の設計方法 | |
JP2019214714A (ja) | フィラー含有フィルム | |
CN107454741B (zh) | 导电粒子、电路部件的连接材料、连接构造以及连接方法 | |
JP2007184408A (ja) | 電極接合方法 | |
JP7198693B2 (ja) | 焼結接合用シートおよび基材付き焼結接合用シート | |
JP2007266042A (ja) | 積層構造体の製造方法 | |
KR101971493B1 (ko) | 은코팅 구리 필라 접합 구조체 및 이를 이용한 접합 방법 | |
US20090126856A1 (en) | Method for manufacturing multilayer ceramic substrate | |
JP4501632B2 (ja) | 半導体装置の製造方法 | |
JP4211100B2 (ja) | 回路の接続部材及びその製造方法 | |
US11270968B2 (en) | Electronic circuit connection method and electronic circuit |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181025 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20181025 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20181025 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190917 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20191016 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6605718 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |