JP6605382B2 - 半導体装置及び半導体装置の製造方法 - Google Patents

半導体装置及び半導体装置の製造方法 Download PDF

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JP6605382B2
JP6605382B2 JP2016068625A JP2016068625A JP6605382B2 JP 6605382 B2 JP6605382 B2 JP 6605382B2 JP 2016068625 A JP2016068625 A JP 2016068625A JP 2016068625 A JP2016068625 A JP 2016068625A JP 6605382 B2 JP6605382 B2 JP 6605382B2
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main body
metal layer
heat sink
semiconductor device
body portion
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JP2017183521A5 (https=
JP2017183521A (ja
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隆史 小澤
康弘 佐久田
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Priority to US15/461,791 priority patent/US10020240B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/258—Metallic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/02—Manufacture or treatment of conductive package substrates serving as an interconnection, e.g. of metal plates
    • H10W70/027—Mechanical treatments, e.g. deforming, punching or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/014—Manufacture or treatment using batch processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/129—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed forming a chip-scale package [CSP]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/141—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being on at least the sidewalls of the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/401—Marks applied to devices, e.g. for alignment or identification for identification or tracking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/601—Marks applied to devices, e.g. for alignment or identification for use after dicing
    • H10W46/607—Located on parts of packages, e.g. on encapsulations or on package substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07178—Means for aligning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/325—Die-attach connectors having a filler embedded in a matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/877—Bump connectors and die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H10W74/117—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP2016068625A 2016-03-30 2016-03-30 半導体装置及び半導体装置の製造方法 Active JP6605382B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2016068625A JP6605382B2 (ja) 2016-03-30 2016-03-30 半導体装置及び半導体装置の製造方法
US15/461,791 US10020240B2 (en) 2016-03-30 2017-03-17 Semiconductor device

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JP2016068625A JP6605382B2 (ja) 2016-03-30 2016-03-30 半導体装置及び半導体装置の製造方法

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JP2017183521A JP2017183521A (ja) 2017-10-05
JP2017183521A5 JP2017183521A5 (https=) 2019-01-10
JP6605382B2 true JP6605382B2 (ja) 2019-11-13

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Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6771308B2 (ja) * 2016-05-02 2020-10-21 三菱電機株式会社 回路基板および半導体集積回路の実装構造
JP6847266B2 (ja) * 2017-12-20 2021-03-24 三菱電機株式会社 半導体パッケージおよびその製造方法
CN109950214A (zh) * 2017-12-20 2019-06-28 安世有限公司 芯片级封装半导体器件及其制造方法
CN107993991B (zh) 2017-12-20 2024-10-01 合肥矽迈微电子科技有限公司 一种芯片封装结构及其制造方法
KR102164795B1 (ko) 2018-09-06 2020-10-13 삼성전자주식회사 팬-아웃 반도체 패키지
CN111211059B (zh) * 2018-11-22 2023-07-04 矽品精密工业股份有限公司 电子封装件及其制法与散热件
KR102711765B1 (ko) * 2019-03-06 2024-09-27 삼성전기주식회사 전자 소자 모듈 및 그 제조 방법
KR102601150B1 (ko) 2019-08-23 2023-11-09 삼성전자주식회사 반도체 패키지
KR102789020B1 (ko) 2019-12-19 2025-04-01 삼성전기주식회사 전자부품 내장기판
KR102328997B1 (ko) * 2020-04-21 2021-11-18 삼성전기주식회사 방열부를 갖는 전자 소자 모듈 및 그 제조 방법
CN111769085A (zh) * 2020-07-20 2020-10-13 杰华特微电子（杭州）有限公司 一种半导体散热片装置、封装方法及封装结构
CN115132680A (zh) * 2021-03-25 2022-09-30 张有谅 芯片用复合式散热盖板
US11557525B2 (en) 2021-05-25 2023-01-17 Nxp Usa, Inc. Semiconductor package thermal spreader having integrated RF/EMI shielding and antenna elements
GB2629261A (en) * 2022-02-14 2024-10-23 Mitsubishi Electric Corp Semiconductor device
WO2024191465A1 (en) * 2023-03-13 2024-09-19 MTS IP Holdings Ltd Electronic package construction for immersion cooling of integrated circuits
WO2025014514A1 (en) 2023-07-10 2025-01-16 MTS IP Holdings Ltd Direct to chip application of boiling enhancement coating
KR102689538B1 (ko) * 2023-09-14 2024-07-29 액셀레타 주식회사 칩 스케일 전력 반도체 패키지 구조 및 이의 제조 방법

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3148718B2 (ja) * 1998-08-28 2001-03-26 インダストリアル テクノロジー リサーチ インスティチュート 熱的及び電気的に増強された半導体パッケージ
US6432749B1 (en) * 1999-08-24 2002-08-13 Texas Instruments Incorporated Method of fabricating flip chip IC packages with heat spreaders in strip format
US6184580B1 (en) * 1999-09-10 2001-02-06 Siliconware Precision Industries Co., Ltd. Ball grid array package with conductive leads
JP2002151633A (ja) * 2000-11-08 2002-05-24 Citizen Watch Co Ltd 樹脂封止型半導体装置
JP3888439B2 (ja) * 2002-02-25 2007-03-07 セイコーエプソン株式会社 半導体装置の製造方法
EP1556894A4 (en) * 2002-09-30 2009-01-14 Advanced Interconnect Tech Ltd THERMALLY IMPROVED SEALING FOR SINGLE-LOCKING ASSEMBLY
US6882535B2 (en) * 2003-03-31 2005-04-19 Intel Corporation Integrated heat spreader with downset edge, and method of making same
JP3841768B2 (ja) * 2003-05-22 2006-11-01 新光電気工業株式会社 パッケージ部品及び半導体パッケージ
JP2006222406A (ja) * 2004-08-06 2006-08-24 Denso Corp 半導体装置
JP2010232471A (ja) * 2009-03-27 2010-10-14 Renesas Electronics Corp 半導体装置の製造方法および半導体装置
JP2009302556A (ja) 2009-08-31 2009-12-24 Renesas Technology Corp 半導体装置
JP2012174696A (ja) * 2011-02-17 2012-09-10 Fujikura Ltd 接合面を備えた放熱装置およびその表面処理方法
JP5729126B2 (ja) * 2011-05-18 2015-06-03 株式会社デンソー 半導体装置の製造方法
US9159643B2 (en) * 2012-09-14 2015-10-13 Freescale Semiconductor, Inc. Matrix lid heatspreader for flip chip package
KR102424402B1 (ko) * 2015-08-13 2022-07-25 삼성전자주식회사 반도체 패키지 및 그 제조방법

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US20170287805A1 (en) 2017-10-05
JP2017183521A (ja) 2017-10-05

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