JP6596508B2 - モノリシック半導体レーザ素子 - Google Patents
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Description
2 第2の層構造
3 第1の不活性板
4 第2の不活性板
5 エピ基板層
6 エピ構造層
7 絶縁層
8 第1のボンド層
9 第2のボンド層
10 不活性基板
11 ボンド面
12 接触ストライプ
13 絶縁溝
14 個別構造
15 立体的構造体
16 パッシベーション層
17 エピ基板
18 エピ構造
19 pコンタクト窓
20 nコンタクト窓
21 第1の金属皮膜
22 第2の金属被膜
100 半導体レーザ素子
101 個別エミッタ
Claims (19)
- 1つの共通の不活性基板上に並列配置された複数の個別エミッタ(101)を含み、前記個別エミッタがそれぞれ電気的接触用のコンタクト窓(19、20)を有し、前記コンタクト窓がそれぞれ個別エミッタ(101)に不活性基板と対向する前面側に配置されているモノリシック半導体レーザ素子(100)において、
前記個別エミッタ(101)がそれぞれ多層のエピ構造(18)を含み、
前記エピ構造がそれぞれエピ基板(17)の上に、前記エピ基板(17)が前記エピ構造(18)により完全には覆われないように形成され、
前記エピ構造(18)が少なくとも1つのpドープクラッド層と少なくとも1つのnドープクラッド層とを含み、
pコンタクト窓(19)がpドープクラッド層の電気的接触のため前面側で前記エピ構造(18)の上に配置され、
nコンタクト窓(20)がnドープクラッド層の電気的接触のため前面側で前記エピ基板(17)の上に、前記エピ基板(17)が前記エピ構造(18)により覆われない範囲に配置され、
前記個別エミッタ(101)が前記不活性基板と間接的にその間に配置されたボンド面(11)を介して接続されるとともに、
前記個別エミッタ(101)が前記ボンド面(11)からその間に配置された絶縁層(7)により電気的に絶縁されることを特徴とするモノリシック半導体レーザ素子。 - 前記個別エミッタ(101)のコンタクト窓(19、20)が、前記個別エミッタ(101)が互いに電気的に直列接続されるように金属皮膜(21、22)により接合されることを特徴とする請求項1記載のモノリシック半導体レーザ素子(100)。
- 少なくとも1つの前記個別エミッタ(101)のpコンタクト窓(19)の1つが隣接する前記個別エミッタ(101)の少なくとも1つの個別エミッタ(101)のnコンタクト窓(20)と前記金属皮膜(21、22)により導電接合されることを特徴とする請求項2記載のモノリシック半導体レーザ素子(100)。
- 前記不活性基板上での前記個別エミッタ(101)の配列を決定する立体的構造体(15)の形成を構造化工程で行い、
構造化工程で、前記個別エミッタ(101)に対応する個別構造(14)を不活性基板を含む1つの多層基体から形成し、前記個別構造(14)が前記不活性基板から剥がれないようにし、前記不活性基板に対向する前記個別構造(14)の前面側を前記コンタクト窓(19、20)の形成のために用いることを特徴とする請求項1記載のモノリシック半導体レーザ素子(100)の製造方法。 - 前記多層基体が少なくとも1つのエピ構造層(6)、1つのエピ基板層(5)および不活性板(4)の上に施される1つの不活性基板(10)を有することを特徴とする請求項4記載の方法。
- 前記多層基体の前記エピ構造層(6)および前記エピ基板層(5)が構造化工程において前記個別構造(14)を形成するため部分的に削除されることを特徴とする請求項5記載の方法。
- 構造化工程において電流注入用の接触ストライプ(12)が前記エピ構造層(6)に取り付けられることを特徴とする請求項5または6記載の方法。
- 前記エピ構造層(6)が構造化工程において部分的に前記エピ基板層(5)の高さまで切除され、前記エピ基板層(5)が完全には前記エピ構造層(6)により覆われないようにすることを特徴とする請求項5から7の1つに記載の方法。
- 構造化工程がリトグラフィを含むことを特徴とする請求項4から8の1つに記載の方法。
- パッシベーション工程において、構造化工程で形成された前記立体的構造体(15)を全面的にパッシベーション層(16)で不動態化することを特徴とする請求項4から9の1つに記載の方法。
- 前記パッシベーション層(16)を前記コンタクト窓(19、20)の開放のため乾式または湿式化学的エッチングにより部分的に除去することを特徴とする請求項10記載の方法。
- 前記コンタクト窓(19、20)に金属膜形成工程で金属皮膜(21、22)を施し、前記個別エミッタ(101)に対応する個別構造(14)を直列接続することを特徴とする請求項4から11の1つに記載の方法。
- 前記金属膜形成工程を2段階で行い、
第1の金属膜形成工程で第1の金属皮膜(21)を立体的構造体(15)の上に形成し、前記第1の金属皮膜をエピ基板(17)の上に配置されたnコンタクト窓(20)と接触させ、
第2の金属膜形成工程で少なくとも1つの第2の金属皮膜(22)を形成し、前記第2の金属皮膜がnコンタクト窓(20)に接触する少なくとも1つの第1の金属皮膜(21)を隣接する個別構造(14)のエピ構造(18)上に配置されたpコンタクト窓(19)に接合することを特徴とする請求項12記載の方法。 - 前記不活性基板が少なくとも2つの層構造(1、2)から形成され、前記層構造がボンディング工程でボンドにより互いに接合されることを特徴とする請求項4記載の方法。
- 第1の層構造(1)がエピ構造層(6)、エピ基板層(5)、絶縁層(7)および第1のボンド層(8)の層列を含み、
第1の層構造(1)がエピ構造層(6)側で別の不活性板(3)の上に形成され、
前記不活性板が、第1のボンド層(8)が第2の層構造(2)の第2のボンド層(9)とボンディング工程で接合された後に、除去されることを特徴とする請求項14記載の方法。 - 前記第2の層構造(2)が前記第2のボンド層(9)と不活性基板(10)を含み、
前記第2の層構造(2)が不活性基板(10)側で不活性板(4)の上に施されることを特徴とする請求項15記載の方法。 - 前記モノリシック半導体レーザ素子(100)が前記立体的構造体(15)を分割するにより形成されることを特徴とする請求項4から16の1つに記載の方法。
- 請求項1から3の1つに記載された半導体レーザ素子(100)を備えたレーザ装置。
- 前記半導体レーザ素子(100)が光学的媒体の光ポンピングのために配置されることを特徴とする請求項18記載のレーザ装置。
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DE102015105438.8A DE102015105438A1 (de) | 2015-04-09 | 2015-04-09 | Monolithische Diodenlaseranordnung |
DE102015105438.8 | 2015-04-09 | ||
PCT/EP2016/057452 WO2016162340A1 (de) | 2015-04-09 | 2016-04-05 | Monolithische diodenlaseranordnung |
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CN111431031B (zh) * | 2020-04-15 | 2022-05-31 | 常州纵慧芯光半导体科技有限公司 | 一种激光器芯片及其制造方法 |
CN112821185B (zh) * | 2020-12-31 | 2022-03-29 | 中国电子科技集团公司第十三研究所 | 半导体激光器及半导体激光器侧泵模块 |
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-
2015
- 2015-04-09 DE DE102015105438.8A patent/DE102015105438A1/de not_active Withdrawn
-
2016
- 2016-04-05 WO PCT/EP2016/057452 patent/WO2016162340A1/de active Search and Examination
- 2016-04-05 JP JP2017553155A patent/JP6596508B2/ja active Active
- 2016-04-05 KR KR1020177031038A patent/KR102044732B1/ko active IP Right Grant
- 2016-04-05 EP EP16717583.5A patent/EP3281261B1/de active Active
- 2016-04-05 CN CN201680026650.0A patent/CN107567671B/zh active Active
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US20180034243A1 (en) | 2018-02-01 |
KR20170134528A (ko) | 2017-12-06 |
CN107567671B (zh) | 2020-07-28 |
WO2016162340A1 (de) | 2016-10-13 |
JP2018511948A (ja) | 2018-04-26 |
CN107567671A (zh) | 2018-01-09 |
EP3281261B1 (de) | 2021-11-03 |
KR102044732B1 (ko) | 2019-11-14 |
EP3281261A1 (de) | 2018-02-14 |
DE102015105438A1 (de) | 2016-10-13 |
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