JP6590820B2 - 広温度範囲チャックに対する複数流体冷却システム - Google Patents

広温度範囲チャックに対する複数流体冷却システム Download PDF

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Publication number
JP6590820B2
JP6590820B2 JP2016551295A JP2016551295A JP6590820B2 JP 6590820 B2 JP6590820 B2 JP 6590820B2 JP 2016551295 A JP2016551295 A JP 2016551295A JP 2016551295 A JP2016551295 A JP 2016551295A JP 6590820 B2 JP6590820 B2 JP 6590820B2
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Japan
Prior art keywords
fluid
electrostatic
fluids
electrostatic chuck
temperature range
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Expired - Fee Related
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JP2016551295A
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Japanese (ja)
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JP2017506828A5 (https=
JP2017506828A (ja
Inventor
デイビス リー，ウィリアム
デイビス リー，ウィリアム
ドラモンド，スティーブ
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Axcelis Technologies Inc
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Axcelis Technologies Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2016551295A 2014-02-12 2015-02-06 広温度範囲チャックに対する複数流体冷却システム Expired - Fee Related JP6590820B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/178,681 US20150228514A1 (en) 2014-02-12 2014-02-12 Multi Fluid Cooling System for Large Temperature Range Chuck
US14/178,681 2014-02-12
PCT/US2015/014793 WO2015123105A1 (en) 2014-02-12 2015-02-06 Multi fluid cooling system for large temperaure range chuck

Publications (3)

Publication Number Publication Date
JP2017506828A JP2017506828A (ja) 2017-03-09
JP2017506828A5 JP2017506828A5 (https=) 2019-08-08
JP6590820B2 true JP6590820B2 (ja) 2019-10-16

Family

ID=52474123

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016551295A Expired - Fee Related JP6590820B2 (ja) 2014-02-12 2015-02-06 広温度範囲チャックに対する複数流体冷却システム

Country Status (6)

Country Link
US (1) US20150228514A1 (https=)
JP (1) JP6590820B2 (https=)
KR (1) KR102341279B1 (https=)
CN (1) CN105981152B (https=)
TW (1) TWI743020B (https=)
WO (1) WO2015123105A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017060259A1 (en) 2015-10-06 2017-04-13 Asml Holding N.V. Chucks and clamps for holding objects of a lithographic apparatus and methods for controlling a temperature of an object held by a clamp of a lithographic apparatus
JP6997108B2 (ja) * 2016-06-02 2022-01-17 アクセリス テクノロジーズ， インコーポレイテッド ウェハ冷却方法
US10509321B2 (en) * 2018-01-30 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Temperature controlling apparatus and method for forming coating layer
CN111785674B (zh) * 2020-07-15 2023-09-08 北京北方华创微电子装备有限公司 一种半导体工艺设备
CN120565403A (zh) * 2021-03-17 2025-08-29 芝浦机械电子装置株式会社 加热处理装置及加热处理方法
JP7685617B2 (ja) * 2021-05-10 2025-05-29 アプライド マテリアルズ インコーポレイテッド 金属マトリックス複合材料を用いた高温サセプタ

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2741906B2 (ja) * 1989-05-31 1998-04-22 株式会社日立製作所 真空処理方法及び装置
JPH03190125A (ja) * 1989-12-19 1991-08-20 Fujitsu Ltd ドライエッチング装置
JPH0737862A (ja) * 1991-07-08 1995-02-07 Fujitsu Ltd 低温処理装置
US5810933A (en) * 1996-02-16 1998-09-22 Novellus Systems, Inc. Wafer cooling device
US5802856A (en) * 1996-07-31 1998-09-08 Stanford University Multizone bake/chill thermal cycling module
JPH11231946A (ja) * 1998-02-10 1999-08-27 Komatsu Ltd 多段蓄熱タンクの温度制御装置
US6353210B1 (en) * 2000-04-11 2002-03-05 Applied Materials Inc. Correction of wafer temperature drift in a plasma reactor based upon continuous wafer temperature measurements using and in-situ wafer temperature optical probe
US6922324B1 (en) * 2000-07-10 2005-07-26 Christopher M. Horwitz Remote powering of electrostatic chucks
JP3973853B2 (ja) * 2001-03-28 2007-09-12 大日本スクリーン製造株式会社 熱処理装置
US20040187787A1 (en) * 2003-03-31 2004-09-30 Dawson Keith E. Substrate support having temperature controlled substrate support surface
US7993460B2 (en) * 2003-06-30 2011-08-09 Lam Research Corporation Substrate support having dynamic temperature control
JP2006261541A (ja) * 2005-03-18 2006-09-28 Tokyo Electron Ltd 基板載置台、基板処理装置および基板処理方法
US20070091540A1 (en) * 2005-10-20 2007-04-26 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor using multiple zone feed forward thermal control
JP5032269B2 (ja) * 2007-11-02 2012-09-26 東京エレクトロン株式会社 被処理基板の温度調節装置及び温度調節方法、並びにこれを備えたプラズマ処理装置
JP2009177070A (ja) * 2008-01-28 2009-08-06 Toshiba Corp 半導体製造装置
US20100116788A1 (en) * 2008-11-12 2010-05-13 Lam Research Corporation Substrate temperature control by using liquid controlled multizone substrate support
JP5519992B2 (ja) * 2009-10-14 2014-06-11 東京エレクトロン株式会社 基板載置台の温度制御システム及びその温度制御方法
KR101108337B1 (ko) * 2009-12-31 2012-01-25 주식회사 디엠에스 2단의 냉매 유로를 포함하는 정전척의 온도제어장치
US8410393B2 (en) * 2010-05-24 2013-04-02 Lam Research Corporation Apparatus and method for temperature control of a semiconductor substrate support
JP5912439B2 (ja) * 2011-11-15 2016-04-27 東京エレクトロン株式会社 温度制御システム、半導体製造装置及び温度制御方法
JP5957248B2 (ja) * 2012-03-07 2016-07-27 株式会社アルバック 基板保持装置の再生方法
JP5951384B2 (ja) * 2012-07-20 2016-07-13 東京エレクトロン株式会社 温度制御システムへの温調流体供給方法及び記憶媒体
KR101975007B1 (ko) * 2018-09-19 2019-05-07 (주)본씨앤아이 반도체 설비 냉각용 냉각 시스템

Also Published As

Publication number Publication date
KR102341279B1 (ko) 2021-12-20
TWI743020B (zh) 2021-10-21
WO2015123105A1 (en) 2015-08-20
US20150228514A1 (en) 2015-08-13
JP2017506828A (ja) 2017-03-09
CN105981152B (zh) 2019-11-01
KR20160122766A (ko) 2016-10-24
TW201541551A (zh) 2015-11-01
CN105981152A (zh) 2016-09-28

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