JP6584289B2 - 基板載置台および基板処理装置 - Google Patents

基板載置台および基板処理装置 Download PDF

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Publication number
JP6584289B2
JP6584289B2 JP2015216551A JP2015216551A JP6584289B2 JP 6584289 B2 JP6584289 B2 JP 6584289B2 JP 2015216551 A JP2015216551 A JP 2015216551A JP 2015216551 A JP2015216551 A JP 2015216551A JP 6584289 B2 JP6584289 B2 JP 6584289B2
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Japan
Prior art keywords
substrate
mounting table
substrate mounting
elastic sheet
processing
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JP2015216551A
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English (en)
Japanese (ja)
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JP2017092104A (ja
JP2017092104A5 (enExample
Inventor
芳彦 佐々木
芳彦 佐々木
雅人 南
雅人 南
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2015216551A priority Critical patent/JP6584289B2/ja
Priority to TW105134301A priority patent/TWI705495B/zh
Priority to KR1020160144410A priority patent/KR101928626B1/ko
Priority to CN201610963595.XA priority patent/CN107026102B/zh
Publication of JP2017092104A publication Critical patent/JP2017092104A/ja
Publication of JP2017092104A5 publication Critical patent/JP2017092104A5/ja
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    • H10P72/0432—
    • H10P50/242—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H10P14/6514—
    • H10P50/267—
    • H10P72/0431—
    • H10P72/0602—
    • H10P72/72—
    • H10P72/74—
    • H10P95/90—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
JP2015216551A 2015-11-04 2015-11-04 基板載置台および基板処理装置 Active JP6584289B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015216551A JP6584289B2 (ja) 2015-11-04 2015-11-04 基板載置台および基板処理装置
TW105134301A TWI705495B (zh) 2015-11-04 2016-10-24 基板載置台及基板處理裝置
KR1020160144410A KR101928626B1 (ko) 2015-11-04 2016-11-01 기판 탑재대 및 기판 처리 장치
CN201610963595.XA CN107026102B (zh) 2015-11-04 2016-11-04 基板载置台和基板处理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015216551A JP6584289B2 (ja) 2015-11-04 2015-11-04 基板載置台および基板処理装置

Publications (3)

Publication Number Publication Date
JP2017092104A JP2017092104A (ja) 2017-05-25
JP2017092104A5 JP2017092104A5 (enExample) 2018-10-18
JP6584289B2 true JP6584289B2 (ja) 2019-10-02

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Family Applications (1)

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JP2015216551A Active JP6584289B2 (ja) 2015-11-04 2015-11-04 基板載置台および基板処理装置

Country Status (4)

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JP (1) JP6584289B2 (enExample)
KR (1) KR101928626B1 (enExample)
CN (1) CN107026102B (enExample)
TW (1) TWI705495B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7090465B2 (ja) * 2018-05-10 2022-06-24 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP7133992B2 (ja) * 2018-06-07 2022-09-09 東京エレクトロン株式会社 基板載置台及び基板処理装置
JP7079718B2 (ja) * 2018-11-27 2022-06-02 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
KR20220150894A (ko) * 2020-03-05 2022-11-11 미쓰비시 마테리알 가부시키가이샤 플라즈마 처리 장치용 부재와 그 제조 방법, 및 플라즈마 처리 장치
JP7301021B2 (ja) * 2020-05-01 2023-06-30 東京エレクトロン株式会社 基板処理装置、載置台及び温度制御方法
WO2024004039A1 (ja) * 2022-06-28 2024-01-04 日本碍子株式会社 ウエハ載置台
CN121127958A (zh) * 2023-05-08 2025-12-12 东京毅力科创株式会社 部件和部件的制造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001237222A (ja) * 2000-02-22 2001-08-31 Shibaura Mechatronics Corp 真空処理装置
US7232591B2 (en) * 2002-04-09 2007-06-19 Matsushita Electric Industrial Co., Ltd. Method of using an adhesive for temperature control during plasma processing
JP4082924B2 (ja) * 2002-04-16 2008-04-30 キヤノンアネルバ株式会社 静電吸着ホルダー及び基板処理装置
US7431788B2 (en) * 2005-07-19 2008-10-07 Lam Research Corporation Method of protecting a bond layer in a substrate support adapted for use in a plasma processing system
JP2007311613A (ja) * 2006-05-19 2007-11-29 Hitachi High-Technologies Corp 試料台及びそれを備えたプラズマ処理装置
CN101770971B (zh) * 2008-12-31 2012-06-20 中芯国际集成电路制造(上海)有限公司 晶圆承载装置
KR101219054B1 (ko) * 2009-05-27 2013-01-18 도쿄엘렉트론가부시키가이샤 정전 흡착 전극 및 그 제조 방법, 그리고 기판 처리 장치
US20120037068A1 (en) * 2010-08-11 2012-02-16 Applied Materials, Inc. Composite substrates for direct heating and increased temperature uniformity
JP6010433B2 (ja) * 2012-11-15 2016-10-19 東京エレクトロン株式会社 基板載置台および基板処理装置
JP6296770B2 (ja) * 2013-11-29 2018-03-20 日本特殊陶業株式会社 基板載置装置
JP2017001899A (ja) * 2015-06-05 2017-01-05 旭硝子株式会社 フロートガラス製造方法、及びフロートガラス製造装置

Also Published As

Publication number Publication date
JP2017092104A (ja) 2017-05-25
TW201730960A (zh) 2017-09-01
KR20170052492A (ko) 2017-05-12
CN107026102B (zh) 2020-03-31
TWI705495B (zh) 2020-09-21
KR101928626B1 (ko) 2018-12-12
CN107026102A (zh) 2017-08-08

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