JP6584289B2 - 基板載置台および基板処理装置 - Google Patents

基板載置台および基板処理装置 Download PDF

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Publication number
JP6584289B2
JP6584289B2 JP2015216551A JP2015216551A JP6584289B2 JP 6584289 B2 JP6584289 B2 JP 6584289B2 JP 2015216551 A JP2015216551 A JP 2015216551A JP 2015216551 A JP2015216551 A JP 2015216551A JP 6584289 B2 JP6584289 B2 JP 6584289B2
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Japan
Prior art keywords
substrate
mounting table
substrate mounting
elastic sheet
processing
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JP2015216551A
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English (en)
Japanese (ja)
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JP2017092104A5 (enExample
JP2017092104A (ja
Inventor
芳彦 佐々木
芳彦 佐々木
雅人 南
雅人 南
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2015216551A priority Critical patent/JP6584289B2/ja
Priority to TW105134301A priority patent/TWI705495B/zh
Priority to KR1020160144410A priority patent/KR101928626B1/ko
Priority to CN201610963595.XA priority patent/CN107026102B/zh
Publication of JP2017092104A publication Critical patent/JP2017092104A/ja
Publication of JP2017092104A5 publication Critical patent/JP2017092104A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2015216551A 2015-11-04 2015-11-04 基板載置台および基板処理装置 Active JP6584289B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015216551A JP6584289B2 (ja) 2015-11-04 2015-11-04 基板載置台および基板処理装置
TW105134301A TWI705495B (zh) 2015-11-04 2016-10-24 基板載置台及基板處理裝置
KR1020160144410A KR101928626B1 (ko) 2015-11-04 2016-11-01 기판 탑재대 및 기판 처리 장치
CN201610963595.XA CN107026102B (zh) 2015-11-04 2016-11-04 基板载置台和基板处理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015216551A JP6584289B2 (ja) 2015-11-04 2015-11-04 基板載置台および基板処理装置

Publications (3)

Publication Number Publication Date
JP2017092104A JP2017092104A (ja) 2017-05-25
JP2017092104A5 JP2017092104A5 (enExample) 2018-10-18
JP6584289B2 true JP6584289B2 (ja) 2019-10-02

Family

ID=58740285

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015216551A Active JP6584289B2 (ja) 2015-11-04 2015-11-04 基板載置台および基板処理装置

Country Status (4)

Country Link
JP (1) JP6584289B2 (enExample)
KR (1) KR101928626B1 (enExample)
CN (1) CN107026102B (enExample)
TW (1) TWI705495B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7090465B2 (ja) * 2018-05-10 2022-06-24 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP7133992B2 (ja) * 2018-06-07 2022-09-09 東京エレクトロン株式会社 基板載置台及び基板処理装置
JP7079718B2 (ja) * 2018-11-27 2022-06-02 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US12542258B2 (en) 2020-03-05 2026-02-03 Mitsubishi Materials Corporation Member for plasma processing apparatus, method for manufacturing same, and plasma processing apparatus
JP7301021B2 (ja) * 2020-05-01 2023-06-30 東京エレクトロン株式会社 基板処理装置、載置台及び温度制御方法
JP7478903B1 (ja) * 2022-06-28 2024-05-07 日本碍子株式会社 ウエハ載置台
KR20260002818A (ko) * 2023-05-08 2026-01-06 도쿄엘렉트론가부시키가이샤 부재 및 부재의 제조 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001237222A (ja) * 2000-02-22 2001-08-31 Shibaura Mechatronics Corp 真空処理装置
KR100995715B1 (ko) * 2002-04-09 2010-11-19 파나소닉 주식회사 플라즈마 처리 방법 및 장치와 플라즈마 처리용 트레이
JP4082924B2 (ja) * 2002-04-16 2008-04-30 キヤノンアネルバ株式会社 静電吸着ホルダー及び基板処理装置
US7431788B2 (en) * 2005-07-19 2008-10-07 Lam Research Corporation Method of protecting a bond layer in a substrate support adapted for use in a plasma processing system
JP2007311613A (ja) * 2006-05-19 2007-11-29 Hitachi High-Technologies Corp 試料台及びそれを備えたプラズマ処理装置
CN101770971B (zh) * 2008-12-31 2012-06-20 中芯国际集成电路制造(上海)有限公司 晶圆承载装置
KR101219054B1 (ko) * 2009-05-27 2013-01-18 도쿄엘렉트론가부시키가이샤 정전 흡착 전극 및 그 제조 방법, 그리고 기판 처리 장치
US20120037068A1 (en) * 2010-08-11 2012-02-16 Applied Materials, Inc. Composite substrates for direct heating and increased temperature uniformity
JP6010433B2 (ja) * 2012-11-15 2016-10-19 東京エレクトロン株式会社 基板載置台および基板処理装置
JP6296770B2 (ja) * 2013-11-29 2018-03-20 日本特殊陶業株式会社 基板載置装置
JP2017001899A (ja) * 2015-06-05 2017-01-05 旭硝子株式会社 フロートガラス製造方法、及びフロートガラス製造装置

Also Published As

Publication number Publication date
CN107026102A (zh) 2017-08-08
KR101928626B1 (ko) 2018-12-12
KR20170052492A (ko) 2017-05-12
CN107026102B (zh) 2020-03-31
JP2017092104A (ja) 2017-05-25
TWI705495B (zh) 2020-09-21
TW201730960A (zh) 2017-09-01

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