KR101928626B1 - 기판 탑재대 및 기판 처리 장치 - Google Patents

기판 탑재대 및 기판 처리 장치 Download PDF

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Publication number
KR101928626B1
KR101928626B1 KR1020160144410A KR20160144410A KR101928626B1 KR 101928626 B1 KR101928626 B1 KR 101928626B1 KR 1020160144410 A KR1020160144410 A KR 1020160144410A KR 20160144410 A KR20160144410 A KR 20160144410A KR 101928626 B1 KR101928626 B1 KR 101928626B1
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South Korea
Prior art keywords
substrate
elastic sheet
processing
temperature
fastening
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KR1020160144410A
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Korean (ko)
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KR20170052492A (ko
Inventor
요시히코 사사키
마사토 미나미
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도쿄엘렉트론가부시키가이샤
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    • H01L21/3065—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H01L21/02315—
    • H01L21/32136—
    • H01L21/324—
    • H01L21/67098—
    • H01L21/67248—
    • H01L21/6831—
    • H01L21/6835—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
KR1020160144410A 2015-11-04 2016-11-01 기판 탑재대 및 기판 처리 장치 Active KR101928626B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015216551A JP6584289B2 (ja) 2015-11-04 2015-11-04 基板載置台および基板処理装置
JPJP-P-2015-216551 2015-11-04

Publications (2)

Publication Number Publication Date
KR20170052492A KR20170052492A (ko) 2017-05-12
KR101928626B1 true KR101928626B1 (ko) 2018-12-12

Family

ID=58740285

Family Applications (1)

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KR1020160144410A Active KR101928626B1 (ko) 2015-11-04 2016-11-01 기판 탑재대 및 기판 처리 장치

Country Status (4)

Country Link
JP (1) JP6584289B2 (enExample)
KR (1) KR101928626B1 (enExample)
CN (1) CN107026102B (enExample)
TW (1) TWI705495B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240003433A (ko) * 2022-06-28 2024-01-09 엔지케이 인슐레이터 엘티디 웨이퍼 배치대

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7090465B2 (ja) * 2018-05-10 2022-06-24 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP7133992B2 (ja) * 2018-06-07 2022-09-09 東京エレクトロン株式会社 基板載置台及び基板処理装置
JP7079718B2 (ja) * 2018-11-27 2022-06-02 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US12542258B2 (en) 2020-03-05 2026-02-03 Mitsubishi Materials Corporation Member for plasma processing apparatus, method for manufacturing same, and plasma processing apparatus
JP7301021B2 (ja) * 2020-05-01 2023-06-30 東京エレクトロン株式会社 基板処理装置、載置台及び温度制御方法
KR20260002818A (ko) * 2023-05-08 2026-01-06 도쿄엘렉트론가부시키가이샤 부재 및 부재의 제조 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001237222A (ja) * 2000-02-22 2001-08-31 Shibaura Mechatronics Corp 真空処理装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100995715B1 (ko) * 2002-04-09 2010-11-19 파나소닉 주식회사 플라즈마 처리 방법 및 장치와 플라즈마 처리용 트레이
JP4082924B2 (ja) * 2002-04-16 2008-04-30 キヤノンアネルバ株式会社 静電吸着ホルダー及び基板処理装置
US7431788B2 (en) * 2005-07-19 2008-10-07 Lam Research Corporation Method of protecting a bond layer in a substrate support adapted for use in a plasma processing system
JP2007311613A (ja) * 2006-05-19 2007-11-29 Hitachi High-Technologies Corp 試料台及びそれを備えたプラズマ処理装置
CN101770971B (zh) * 2008-12-31 2012-06-20 中芯国际集成电路制造(上海)有限公司 晶圆承载装置
KR101219054B1 (ko) * 2009-05-27 2013-01-18 도쿄엘렉트론가부시키가이샤 정전 흡착 전극 및 그 제조 방법, 그리고 기판 처리 장치
US20120037068A1 (en) * 2010-08-11 2012-02-16 Applied Materials, Inc. Composite substrates for direct heating and increased temperature uniformity
JP6010433B2 (ja) * 2012-11-15 2016-10-19 東京エレクトロン株式会社 基板載置台および基板処理装置
JP6296770B2 (ja) * 2013-11-29 2018-03-20 日本特殊陶業株式会社 基板載置装置
JP2017001899A (ja) * 2015-06-05 2017-01-05 旭硝子株式会社 フロートガラス製造方法、及びフロートガラス製造装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001237222A (ja) * 2000-02-22 2001-08-31 Shibaura Mechatronics Corp 真空処理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240003433A (ko) * 2022-06-28 2024-01-09 엔지케이 인슐레이터 엘티디 웨이퍼 배치대
KR102700261B1 (ko) 2022-06-28 2024-08-28 엔지케이 인슐레이터 엘티디 웨이퍼 배치대

Also Published As

Publication number Publication date
CN107026102A (zh) 2017-08-08
KR20170052492A (ko) 2017-05-12
CN107026102B (zh) 2020-03-31
JP6584289B2 (ja) 2019-10-02
JP2017092104A (ja) 2017-05-25
TWI705495B (zh) 2020-09-21
TW201730960A (zh) 2017-09-01

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