JP6581191B2 - 気相成長法の層厚測定装置および方法 - Google Patents
気相成長法の層厚測定装置および方法 Download PDFInfo
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- 238000001947 vapour-phase growth Methods 0.000 title description 2
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- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
- G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
- G01B7/063—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using piezoelectric resonators
- G01B7/066—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using piezoelectric resonators for measuring thickness of coating
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- G—PHYSICS
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- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B17/00—Measuring arrangements characterised by the use of infrasonic, sonic or ultrasonic vibrations
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- G01B17/025—Measuring arrangements characterised by the use of infrasonic, sonic or ultrasonic vibrations for measuring thickness for measuring thickness of coating
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
- C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/66—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by measuring frequency, phase shift or propagation time of electromagnetic or other waves, e.g. using ultrasonic flowmeters
- G01F1/662—Constructional details
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/02—Analysing fluids
- G01N29/022—Fluid sensors based on microsensors, e.g. quartz crystal-microbalance [QCM], surface acoustic wave [SAW] devices, tuning forks, cantilevers, flexural plate wave [FPW] devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/02—Analysing fluids
- G01N29/036—Analysing fluids by measuring frequency or resonance of acoustic waves
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/04—Analysing solids
- G01N29/12—Analysing solids by measuring frequency or resonance of acoustic waves
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/02—Indexing codes associated with the analysed material
- G01N2291/025—Change of phase or condition
- G01N2291/0256—Adsorption, desorption, surface mass change, e.g. on biosensors
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- G—PHYSICS
- G01—MEASURING; TESTING
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- G—PHYSICS
- G01—MEASURING; TESTING
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- G01N2291/04—Wave modes and trajectories
- G01N2291/042—Wave modes
- G01N2291/0426—Bulk waves, e.g. quartz crystal microbalance, torsional waves
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- Chemical & Material Sciences (AREA)
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- Acoustics & Sound (AREA)
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- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Fluid Mechanics (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
Description
12 抽出セクション
12a 端部
12b 端部
14 管
16 加熱部
18 冷却部
18a 流入部
18b 流出部
20 真空チャンバ
21 フランジ板
22 コネクタポート
23 フランジ板
24 基板
26 ヒーター
27 側壁部
28 冷却トラップ
29 冷却器
30 測定ヘッド
32 支持体
33 回転軸
34 ハウジング
36 ハウジング開口部
40 インサート
42 フランジ部分
44 ポート
46 シール
50 振動板
52 振動板
Claims (11)
- 気相堆積法によって基板に塗布することができる層の層厚を測定するための測定アセンブリであって、
少なくとも1つの振動板(50,52)を備えた測定ヘッド(30)と、
第1の端部(12a)を介してガス導通または蒸気伝導方式で真空蒸着法のための真空チャンバ(20)に結合することができ、反対側の第2の端部(12b)を介して、ガス導通または蒸気伝導方式で測定ヘッド(30)に結合することができる、抽出セクション(12)と、
を備え、
前記抽出セクション(12)は、少なくとも1つの加熱部(16)または少なくとも1つの冷却部(18)を有すると共に、
前記第2の端部(12b)に隣接する抽出セクション(12)は、前記冷却部(18)を有し、
前記冷却部(18)の領域における前記抽出セクション(12)は、積極的に冷却できる少なくとも1つの側壁部(27)を有する冷却トラップ(28)を有する、測定アセンブリ。 - 前記第1の端部(12a)に隣接する抽出セクション(12)は、加熱部(16)を有する、請求項1に記載の測定アセンブリ。
- 前記抽出セクション(12)は、前記真空チャンバ(20)と前記測定ヘッド(30)との間に延在し、ヒーター(26)に囲まれた前記加熱部(16)の領域における、少なくとも1つのガス伝導性または蒸気伝導性の管(14)を有する、請求項1又は2に記載の測定アセンブリ。
- ガスまたは蒸気によって灌流可能な前記冷却部(18)の内部断面(QK)は、ガスまたは蒸気によって灌流可能な前記加熱部(16)の内部断面(QH)より大きい、請求項1から3のいずれか一項に記載の測定アセンブリ。
- 前記冷却部(18)と前記加熱部(16)とは、前記抽出セクション(12)の長手方向に重なり合わない配置で互いに分離されている、請求項1から4のいずれか一項に記載の測定アセンブリ。
- 前記加熱部の少なくとも1つの加熱出力または前記冷却部(18)の少なくとも1つの冷却出力を調整することができる、請求項1から5のいずれか一項に記載の測定アセンブリ。
- 前記加熱部(16)は、前記抽出セクション(12)の全長の少なくとも50%〜90%を占める、請求項1から6のいずれか一項に記載の測定アセンブリ。
- 前記冷却部は、前記抽出セクション(12)の全長の多くとも10%〜50%を占める、請求項1から7のいずれか一項に記載の測定アセンブリ。
- 前記測定ヘッド(30)は、回転可能な支持体(32)上に配置され、前記測定ヘッド(30)のハウジング開口部(36)の領域内に選択的に移動可能な少なくとも2つの振動板(50,52)を有し、前記ハウジング開口部(36)は、前記抽出セクション(12)の前記第2の端部(12b)の延長部に配置される、請求項1から8のいずれか一項に記載の測定アセンブリ。
- シーリングインサート(40)は、前記測定ヘッド(30)のハウジング(34)の前記ハウジング開口部(36)に挿入され、前記ハウジング(34)の内部の前記シーリングインサートは、前記支持体(32)上に密封状態で支えることができる、請求項9に記載の測定アセンブリ。
- 請求項1から10のいずれか一項に記載の前記測定アセンブリを用いて、気相堆積法によって基板に塗布することができる層の層厚を測定するための方法であって、
前記真空チャンバ(20)から材料蒸気を抽出し、抽出された前記材料蒸気を前記抽出セクション(12)に導くステップと、
前記抽出セクション(12)の少なくとも1つの前記加熱部または前記冷却部(16、18)を積極的に加熱または冷却するステップと、
前記少なくとも1つの振動板(50,52)によって前記真空チャンバ(20)から離れて対向する前記抽出セクション(12)の前記端部(12b)の蒸着速度を測定するステップと、
を含む、層厚を測定するための方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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DE102014014970.6A DE102014014970B4 (de) | 2014-10-14 | 2014-10-14 | Vorrichtung und Verfahren zur Schichtdickenmessung für Dampfabscheideverfahren |
DE102014014970.6 | 2014-10-14 | ||
PCT/EP2015/073304 WO2016058905A1 (de) | 2014-10-14 | 2015-10-08 | Vorrichtung und verfahren zur schichtdickenmessung für dampfabscheideverfahren |
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JP (1) | JP6581191B2 (ja) |
KR (2) | KR101963987B1 (ja) |
CN (1) | CN107076538B (ja) |
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WO (1) | WO2016058905A1 (ja) |
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US10684126B2 (en) | 2020-06-16 |
KR20170066458A (ko) | 2017-06-14 |
CN107076538A (zh) | 2017-08-18 |
WO2016058905A1 (de) | 2016-04-21 |
KR101963987B1 (ko) | 2019-03-29 |
DE102014014970A1 (de) | 2016-04-14 |
US20170241776A1 (en) | 2017-08-24 |
KR20190032650A (ko) | 2019-03-27 |
CN107076538B (zh) | 2019-10-15 |
DE102014014970B4 (de) | 2020-01-02 |
JP2017532565A (ja) | 2017-11-02 |
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