JP6580447B2 - Adhesive sheet and method for manufacturing semiconductor device - Google Patents

Description

  The present invention relates to an adhesive sheet and a method for manufacturing a semiconductor device.

  In recent years, electronic devices have been reduced in size, weight, and functionality. Semiconductor devices mounted on electronic devices are also required to be smaller, thinner, and higher in density. A semiconductor chip may be mounted in a package close to its size. Such a package may be referred to as a chip scale package (CSP). One of the processes for manufacturing a CSP is a wafer level package (WLP). In WLP, before dicing into individual pieces, external electrodes and the like are formed on the chip circuit formation surface, and finally a package containing the chips is diced into individual pieces. Examples of WLP include a fan-in type and a fan-out type. In a fan-out type WLP (hereinafter sometimes abbreviated as FO-WLP), a semiconductor chip sealing body is formed by covering a semiconductor chip with a sealing member so as to be an area larger than the chip size. The rewiring layer and the external electrode are formed not only on the circuit surface of the semiconductor chip but also on the surface region of the sealing member.

  For example, in Patent Document 1, an extended wafer is formed by enclosing a plurality of semiconductor chips separated from a semiconductor wafer, leaving a circuit formation surface thereof, and surrounding with a mold member, in a region outside the semiconductor chip. A method for manufacturing a semiconductor package formed by extending a rewiring pattern is described. In the manufacturing method described in Patent Document 1, a silicon wafer is attached to a wafer mounting tape for dicing and subjected to a dicing process. Thereafter, the wafer is expanded to a wafer mount tape for expansion, and a tape expanding process is performed in which the wafer mount tape (support tape) is spread to increase the distance between the plurality of silicon chips.

International Publication No. 2010/058646

  However, in the manufacturing method described in Patent Document 1, since the tape used in the dicing process is different from the tape used in the tape expanding process, a process of replacing the tape is necessary.

  The objective of this invention is providing the manufacturing method of the adhesive sheet which can simplify the manufacturing process of a semiconductor device, and the said adhesive sheet.

  According to an aspect of the present invention, a first base material layer having a first base material surface and a second base material surface opposite to the first base material surface, and the second base material layer of the second base material surface. A second base material layer laminated on the base material surface side; and a first pressure-sensitive adhesive layer laminated on the first base material surface side of the first base material layer, wherein the first base material layer comprises: The pressure-sensitive adhesive sheet contains ethylene- (meth) acrylate copolymer resin as a main component, the second base material layer contains a polyurethane resin as a main component, and the elongation at break of the second base material layer is 400% or more. Is provided.

According to the pressure-sensitive adhesive sheet according to this aspect, the first base material layer is a base material having dicing suitability, the second base material layer is a base material having expandability suitability, and these are laminated. For example, a semiconductor wafer is attached to an adhesive layer, the semiconductor wafer is diced, and then the expanding process is performed while attaching a plurality of diced semiconductor chips without being attached to another adhesive sheet. be able to. Since the breaking elongation of the second base material layer is 400% or more, according to the pressure-sensitive adhesive sheet according to this aspect, the interval between the semiconductor chips can be greatly increased. Therefore, according to the adhesive sheet which concerns on 1 aspect of this invention, the manufacturing process of a semiconductor device can be simplified.
Since the pressure-sensitive adhesive sheet according to one embodiment of the present invention can be suitably used for, for example, the FO-WLP process, it is preferably a pressure-sensitive adhesive sheet for a process for producing a fan-out type wafer level package.

  In the pressure-sensitive adhesive sheet according to one aspect of the present invention, the first base material layer is preferably a film for a dicing sheet.

The adhesive sheet which concerns on 1 aspect of this invention WHEREIN: It is preferable to provide a 2nd adhesive layer between said 1st base material layer and said 2nd base material layer.
In this aspect, since the second pressure-sensitive adhesive layer is provided between the first base material layer and the second base material layer, the impact when the pressure-sensitive adhesive sheet is expanded and the first base material layer is broken in the expanding step. Can be prevented from being added to the second base material layer.

In the pressure-sensitive adhesive sheet according to one aspect of the present invention, the thickness of the second pressure-sensitive adhesive layer is preferably 2 μm or more and 30 μm or less.
In this aspect, since the thickness of the second pressure-sensitive adhesive layer is 2 μm or more and 30 μm or less, it is easy to prevent a plurality of semiconductor chips from being detached from the pressure-sensitive adhesive sheet or scattered after dicing. Moreover, since the thickness of the second pressure-sensitive adhesive layer is 2 μm or more, even when the first base material layer is cut at a depth reaching from the upper surface to the lower surface using a dicing blade or the like during dicing (full cut), It becomes easy to prevent the dicing blade from reaching the second base material layer. If the notch is not formed in the second base material layer, the second base material layer can be prevented from breaking when the pressure-sensitive adhesive sheet is expanded in the expanding step. Further, since the thickness of the second pressure-sensitive adhesive layer is 30 μm or less, vibration during dicing can be suppressed and chipping can be prevented.

The adhesive sheet which concerns on 1 aspect of this invention WHEREIN: It is preferable that the adhesive force with respect to said 1st base material layer and said 2nd base material layer of said 2nd adhesive layer is 1000 mN / 25mm or more and 20000 mN / 25mm or less.
In this aspect, since the adhesive force of the second pressure-sensitive adhesive layer to the first base material layer and the second base material layer is 1000 mN / 25 mm or more and 20000 mN / 25 mm or less, the first base material layer and the second base material It will be in the state by which the layer was bonded by the adhesive force more than predetermined intensity | strength. Therefore, according to this aspect, the effect of preventing the plurality of semiconductor chips after dicing from being detached or scattered from the adhesive sheet is further improved.

In the pressure-sensitive adhesive sheet according to one aspect of the present invention, it is preferable that the first pressure-sensitive adhesive layer contains an energy ray-curable pressure-sensitive adhesive, and the second pressure-sensitive adhesive layer does not contain an energy ray-curable pressure-sensitive adhesive. .
In this embodiment, the first pressure-sensitive adhesive layer contains an energy ray-curable pressure-sensitive adhesive, and the second pressure-sensitive adhesive layer does not contain an energy ray-curable pressure-sensitive adhesive. Irradiation can reduce the adhesive strength while maintaining the adhesive strength of the second adhesive layer. Therefore, when peeling an adhesive sheet after a dicing process and an expanding process, it can make it easy to peel in the interface of a semiconductor chip and a 1st adhesive layer.

According to one aspect of the present invention, a first base material layer having a first base material surface and a second base material surface opposite to the first base material surface, and the first base material layer of the first base material layer. A first pressure-sensitive adhesive layer laminated on the base material surface side; and a second base material layer laminated on the second base material surface side of the first base material layer, the first base material layer comprising: , An ethylene- (meth) acrylate copolymer resin as a main component, the second base material layer including a polyurethane resin as a main component, and the second base material layer having an elongation at break of 400% or more A step of adhering a semiconductor wafer to the first pressure-sensitive adhesive layer of the sheet; a step of dicing the semiconductor wafer to form a plurality of semiconductor chips; and extending the pressure-sensitive adhesive sheet to form the plurality of semiconductor chips. There is provided a method for manufacturing a semiconductor device, comprising a step of widening a gap between each other.
In the method for manufacturing a semiconductor device according to this aspect, since the pressure-sensitive adhesive sheet according to one aspect of the present invention is used, the manufacturing process of the semiconductor device can be simplified. According to the method for manufacturing a semiconductor device according to this aspect, since the pressure-sensitive adhesive sheet having the second base material layer having a breaking elongation of 400% or more is used, the interval between the semiconductor chips can be greatly increased. Therefore, the semiconductor device manufacturing method according to this aspect can be suitably used as, for example, an FO-WLP process.

In the method of manufacturing a semiconductor device according to one aspect of the present invention, in the step of separating the semiconductor wafer, a dicing blade is used to cut from the upper surface side of the first base material layer, and the lower surface of the first base material layer In the step of extending the pressure-sensitive adhesive sheet by stopping the cutting without reaching the top, it is preferable to break the first base material layer along the cutting formed when the dicing blade cuts.
In the method for manufacturing a semiconductor device according to this aspect, the first base material layer is not fully cut and is cut (half cut) to stop the cutting at a depth that does not reach the lower surface of the first base material layer. Therefore, even when a dicing blade or the like is used during dicing, it is easy to prevent the dicing blade from reaching the second base material layer. Furthermore, after dicing by half-cutting, in the expanding process, by expanding the pressure-sensitive adhesive sheet, the interval between the semiconductor chips can be greatly expanded while breaking the first base material layer.

In the method for manufacturing a semiconductor device according to one aspect of the present invention, the pressure-sensitive adhesive sheet has a thickness of 2 μm or more and 30 μm or less between the first base material layer and the second base material layer. And in the step of dividing the semiconductor wafer into pieces, a dicing blade is used to cut from the upper surface side of the first base material layer to reach the lower surface of the first base material layer, and further to the second pressure-sensitive adhesive layer In the step of cutting from the upper surface side, stopping the cutting without reaching the lower surface of the second pressure-sensitive adhesive layer, and extending the pressure-sensitive adhesive sheet, the second along the cut formed when cutting with the dicing blade It is preferable to break the pressure-sensitive adhesive layer.
In the method for manufacturing a semiconductor device according to this aspect, since the pressure-sensitive adhesive sheet having the second pressure-sensitive adhesive layer having a thickness of 2 μm or more and 30 μm or less is used, even when the first base material layer is fully cut, the dicing blade is second. It becomes easy to prevent reaching the base material layer. Since no cut is formed in the second base material layer, the second base material layer can be prevented from breaking when the pressure-sensitive adhesive sheet is expanded in the expanding step.

It is sectional drawing of the adhesive sheet which concerns on 1st embodiment. It is sectional drawing explaining the manufacturing method which concerns on 1st embodiment. FIG. 3 is a cross-sectional view illustrating the manufacturing method according to the first embodiment following FIG. 2. It is sectional drawing explaining the manufacturing method which concerns on 1st embodiment following FIG. It is sectional drawing explaining the manufacturing method which concerns on 1st embodiment following FIG. It is sectional drawing explaining the manufacturing method which concerns on 1st embodiment following FIG. It is sectional drawing of the adhesive sheet which concerns on 2nd embodiment. It is sectional drawing explaining the manufacturing method which concerns on 2nd embodiment.

[First embodiment]
Hereinafter, the manufacturing method of the adhesive sheet and the semiconductor device according to the present embodiment will be described.

(Adhesive sheet)
FIG. 1 shows a cross-sectional view of an adhesive sheet 100 according to this embodiment.
The pressure-sensitive adhesive sheet 100 includes a first base material layer 11, a second base material layer 12, and a first pressure-sensitive adhesive layer 13. The shape of the pressure-sensitive adhesive sheet 100 can take any shape such as a sheet shape, a tape shape, and a label shape.

-1st base material layer The 1st base material layer 11 is provided between the 1st adhesive layer 13 and the 2nd base material layer 12, as FIG. 1 shows. The first base material layer 11 has a first base material surface 11a and a second base material surface 11b opposite to the first base material surface 11a.
The first base material layer 11 contains an ethylene- (meth) acrylate copolymer resin as a main component. In the present specification, including an ethylene- (meth) acrylate copolymer resin as a main component means that the proportion of the ethylene- (meth) acrylate copolymer resin in the total mass of the components constituting the first base material layer 11 is It means 50% by mass or more. In the present embodiment, the proportion of the ethylene- (meth) acrylate copolymer resin in the first base material layer 11 is preferably 60% by mass or more, more preferably 80% by mass or more, and 95% by mass. % Or more is more preferable. In the present specification, “(meth) acrylate” is a notation used to represent at least one of “acrylate” and “methacrylate”, and the same applies to other similar terms. The ethylene- (meth) acrylate copolymer resin is preferably a copolymer obtained by copolymerizing ethylene and at least one of acrylic acid and methacrylic acid. Furthermore, in addition to ethylene, acrylic acid, and methacrylic acid, other monomers may be copolymerized with the ethylene- (meth) acrylate copolymer as long as the object of the present invention is not impaired. Examples of other monomers include acrylic acid esters and methacrylic acid esters. A structural unit derived from such a monomer may be contained in the ethylene- (meth) acrylate copolymer. In addition, other resins may be mixed in the first base material layer 11 as long as the object of the present invention is not impaired. Examples of the other resins include low-density polyethylene and EVA (ethylene / vinyl acetate copolymer). Resin).
It is preferable that the 1st base material layer 11 is a film for dicing sheets.

-2nd base material layer The 2nd base material layer 12 is provided in the 2nd base material surface 11b side of the 1st base material layer 11, as FIG. 1 shows. The second base material layer 12 is in contact with the first base material layer 11.
The 2nd base material layer 12 contains a polyurethane resin as a main component. In this specification, including a polyurethane resin as a main component means that the ratio of the polyurethane resin in the total mass of the components constituting the second base material layer 12 is 50% by mass or more. In the present embodiment, the ratio of the polyurethane resin in the second base material layer 12 is preferably 60% by mass or more, more preferably 80% by mass or more, and further preferably 95% by mass or more. preferable.

  The breaking elongation of the second base material layer 12 is 400% or more, preferably 500% or more, and more preferably 600% or more, from the viewpoint of the expanding property. The upper limit of the breaking elongation of the second base material layer 12 is preferably a value that does not cause the second base material layer 12 to break in the expanding step. In addition, the breaking elongation in this specification can be measured according to JIS K7127, setting the tensile speed to 200 mm / min and setting the distance between gripping jigs to 50 mm.

A film containing a polyurethane resin as a main component (polyurethane film) can be obtained by polyaddition reaction of diisocyanate and diol. The polyurethane film should just be a polyurethane film which satisfy | fills the above-mentioned breaking elongation.
Examples of diisocyanates include aromatic isocyanates and aliphatic isocyanates, and polyfunctional isocyanates may be used.
Examples of the diol include polyether diol, polyester diol, and polycarbonate diol. In order to introduce a soft segment into the polyurethane resin, a low molecular weight diol such as butanediol may be used.
Further, in order to further improve the flexibility of the polyurethane resin, a rubber compound such as isoprene containing a hydroxyl group is reacted together in the polyaddition reaction so that the structural unit derived from the rubber compound is contained in the polyurethane polymer. You may make it take in.
In addition, in order to improve the toughness of the polyurethane resin, a (meth) acrylate compound containing a hydroxyl group is reacted together in the polyaddition reaction, and the structural unit derived from the (meth) acrylate compound is a polyurethane polymer. You may make it take in.

The thickness of the 1st base material layer 11 and the 2nd base material layer 12 is not specifically limited.
For example, the thickness of the first base material layer 11 is preferably 12 μm or more and 150 μm or less in accordance with the blade protrusion amount, because a cut is made during dicing. If the thickness of the first base material layer 11 is in such a range, it is possible to prevent the occurrence of a problem that the first base material layer 11 is too thick to be cut at the time of expansion and a problem that the second base material layer 12 is cut too thin. it can.
In addition, for example, the thickness of the second base material layer 12 is preferably 30 μm or more and 1500 μm or less from the viewpoint of not being broken by the expand. If the thickness of the second base material layer 12 is in such a range, there is a problem that the film is too thin and breaks when expanded, or a problem that the expansion force becomes too strong and the expansion becomes difficult due to expansion. Can be prevented.

-1st adhesive layer The 1st adhesive layer 13 is provided in the 1st base material surface 11a side of the 1st base material layer 11, as FIG. 1 shows.
The pressure-sensitive adhesive contained in the first pressure-sensitive adhesive layer 13 is not particularly limited and can be widely applied. Examples of the pressure-sensitive adhesive contained in the first pressure-sensitive adhesive layer 13 include rubber-based, acrylic-based, silicone-based, polyester-based, and urethane-based adhesives. In addition, the kind of adhesive is selected in consideration of the use, the kind of adherend to be attached, and the like.

  The first pressure-sensitive adhesive layer 13 may include an energy ray curable pressure-sensitive adhesive. Examples of the energy ray curable pressure sensitive adhesive include pressure sensitive adhesives containing an energy ray polymerizable compound. When the energy ray curable pressure sensitive adhesive is included, the energy ray polymerizable compound is cured by irradiating the first pressure sensitive adhesive layer 13 with energy rays from the first base material layer 11 side. When the energy ray polymerizable compound is cured, the cohesive force of the first pressure-sensitive adhesive layer 13 is increased, and the pressure-sensitive adhesive force between the first pressure-sensitive adhesive layer 13 and the adherend (for example, a semiconductor wafer or a semiconductor chip) is reduced or Can be eliminated. Examples of the energy rays include ultraviolet rays (UV) and electron beams (EB), and ultraviolet rays are preferable.

  The thickness of the first pressure-sensitive adhesive layer 13 is preferably 3 μm or more and 100 μm or less, and more preferably 10 μm or more and 50 μm or less. If the thickness of the 1st adhesive layer 13 is 3 micrometers or more, it can prevent that a semiconductor wafer and the separated semiconductor chip detach | leave from the adhesive sheet 100, or a semiconductor chip scatters. Moreover, if the thickness of the 1st adhesive layer 13 is 100 micrometers or less, when picking up the semiconductor chip after separating into pieces, it will become easy to peel from an adhesive sheet.

(Method for producing adhesive sheet)
The manufacturing method of the adhesive sheet 100 is not specifically limited. For example, it can be manufactured by the following method.
The 1st base material layer 11 and the 2nd base material layer 12 can be laminated | stacked by employ | adopting the method of forming the conventional laminated body, As a lamination | stacking method, a coextrusion method is mentioned, for example.
After laminating the first base material layer 11 and the second base material layer 12 to obtain a laminate, an adhesive is applied on the first base material surface 11a of the first base material layer 11, and the coating film is applied. Form. Next, this coating film is dried to form the first pressure-sensitive adhesive layer 13. Then, you may stick a peeling sheet so that the 1st adhesive layer 13 may be covered.
Moreover, as another manufacturing method of the adhesive sheet 100, it manufactures through the following processes. First, an adhesive is applied on the release sheet to form a coating film. Next, the coating film is dried to form the first pressure-sensitive adhesive layer 13, and the first base material surface 11 a of the first base material layer 11 is bonded to the first pressure-sensitive adhesive layer 13. Thus, the adhesive sheet 100 with a release sheet is obtained.
When the first pressure-sensitive adhesive layer 13 is formed by coating, it is preferable to prepare and use a coating liquid by diluting the pressure-sensitive adhesive composition with an organic solvent.

(Method for manufacturing semiconductor device)
A method for manufacturing a semiconductor device using the adhesive sheet 100 according to the present embodiment will be described. Here, the adhesive sheet 100 is used as an adhesive sheet for a process for manufacturing a fan-out type wafer level package (FO-WLP).
In the method for manufacturing a semiconductor device according to the present embodiment, a semiconductor wafer is bonded to the first adhesive layer 13 of the pressure-sensitive adhesive sheet 100 (wafer bonding process), and the semiconductor wafer is separated into individual pieces by dicing. A step of forming chips (dicing step), a step of extending the adhesive sheet 100 to widen the intervals between the plurality of semiconductor chips (expanding step), and a step of transferring the plurality of semiconductor chips to the second adhesive sheet (transfer step) ), And after the second pressure-sensitive adhesive sheet is adhered, a step of peeling the pressure-sensitive adhesive sheet 100 (first peeling step), a step of sealing a plurality of semiconductor chips using a sealing member (sealing step), After the sealing step, a step of peeling the second pressure-sensitive adhesive sheet from the sealing body (second peeling step) is performed. Each step will be described below.

[Wafer pasting process]
2 to 6 are schematic views illustrating the method for manufacturing the semiconductor device according to this embodiment. FIG. 2A shows the semiconductor wafer W attached to the adhesive sheet 100. The semiconductor wafer W has a circuit surface W1, and a circuit W2 is formed on the circuit surface W1. The adhesive sheet 100 is attached to the back surface W3 of the semiconductor wafer W opposite to the circuit surface W1.
The semiconductor wafer W may be, for example, a silicon wafer or a compound semiconductor wafer such as gallium / arsenic. Examples of a method for forming the circuit W2 on the circuit surface W1 of the semiconductor wafer W include a widely used method, and examples include an etching method and a lift-off method.
The semiconductor wafer W is ground in advance to a predetermined thickness, and the back surface W3 is exposed to be adhered to the adhesive sheet 100. The method for grinding the semiconductor wafer W is not particularly limited, and examples thereof include a known method using a grinder. When grinding the semiconductor wafer W, a surface protective sheet is adhered to the circuit surface W1 in order to protect the circuit W2. In the backside grinding of the wafer, the circuit surface W1 side of the semiconductor wafer W, that is, the surface protection sheet side is fixed by a chuck table or the like, and the backside where no circuit is formed is ground by a grinder. The thickness of the semiconductor wafer W after grinding is not particularly limited, and is usually 20 μm or more and 500 μm or less.
The adhesive sheet 100 may be adhered to the semiconductor wafer W and the first ring frame. In this case, the first ring frame and the semiconductor wafer W are placed on the first pressure-sensitive adhesive layer 13 of the pressure-sensitive adhesive sheet 100, and these are lightly pressed and fixed.

[Dicing process]
FIG. 2B shows a plurality of semiconductor chips CP held on the adhesive sheet 100. The semiconductor wafer W held on the adhesive sheet 100 is separated into pieces by dicing to form a plurality of semiconductor chips CP. A cutting means such as a dicing saw is used for dicing. The cutting depth at the time of dicing is set to a depth in consideration of the sum of the thickness of the semiconductor wafer W and the thickness of the first pressure-sensitive adhesive layer 13 and the wear of the dicing saw.
In the present embodiment, a dicing blade is used to cut from the upper surface (first substrate surface 11a) side of the first substrate layer 11 and not reach the lower surface (second substrate surface 11b) of the first substrate layer 11. Stop cutting. Since this dicing process is different from a second dicing process described later, it may be referred to as a first dicing process. Let D be the distance between the semiconductor chips CP after the first dicing step.

[Expanding process]
FIG. 2C shows a diagram illustrating a process of stretching the adhesive sheet 100 that holds the plurality of semiconductor chips CP.
After dicing into a plurality of semiconductor chips CP by dicing, the adhesive sheet 100 is stretched to widen the interval between the plurality of semiconductor chips CP. The method for extending the pressure-sensitive adhesive sheet 100 in the expanding step is not particularly limited. Examples of the method for stretching the pressure-sensitive adhesive sheet 100 include a method for stretching the pressure-sensitive adhesive sheet 100 by pressing an annular or circular expander, a method for stretching the pressure-sensitive adhesive sheet 100 by using a gripping member, and the like. It is done.
By performing the expanding step, the first base material layer 11 that has been in a half-cut state is broken along a cut (dicing line) formed when the first base material layer 11 is cut with a dicing blade.
In the present embodiment, as shown in FIG. 2C, the distance between the expanded semiconductor chips CP is D1. For example, the distance D1 is preferably 200 μm or more and 5000 μm or less. Since the breaking elongation of the second base material layer 12 is 400% or more, the distance between the semiconductor chips CP can be extended to the distance D1.

[Transfer process]
FIG. 3A shows a diagram for explaining a process (transfer process) of transferring a plurality of semiconductor chips CP to the second adhesive sheet 200 after the expanding process. After the adhesive sheet 100 is stretched to increase the distance between the plurality of semiconductor chips CP to the distance D1, the second adhesive sheet 200 is adhered to the circuit surface W1 of the semiconductor chip CP.

The second pressure-sensitive adhesive sheet 200 has a second base film 201 and a third pressure-sensitive adhesive layer 202. It is preferable that the 2nd adhesive sheet 200 is stuck so that the circuit surface W1 may be covered with the 3rd adhesive layer 202. FIG.
The material of the second base film 201 is not particularly limited. Examples of the material of the second base film 201 include polyvinyl chloride resin, polyester resin (polyethylene terephthalate, etc.), acrylic resin, polycarbonate resin, polyethylene resin, polypropylene resin, acrylonitrile / butadiene / styrene resin, polyimide resin, and polyurethane resin. And polystyrene resin.

  The third pressure-sensitive adhesive layer 202 is laminated on the second base film 201. The pressure-sensitive adhesive contained in the third pressure-sensitive adhesive layer 202 is not particularly limited and can be widely applied. As an adhesive contained in the 3rd adhesive layer 202, the adhesive similar to the adhesive demonstrated about the 1st adhesive layer 13 is mentioned, for example. In addition, the kind of adhesive is selected in consideration of the use, the kind of adherend to be attached, and the like. The third pressure-sensitive adhesive layer 202 may also contain an energy ray polymerizable compound.

  It is preferable that the adhesive strength of the third pressure-sensitive adhesive layer 202 is greater than the adhesive strength of the first pressure-sensitive adhesive layer 13. If the adhesive force of the third pressure-sensitive adhesive layer 202 is larger, the pressure-sensitive adhesive sheet 100 is easily peeled off after the plurality of semiconductor chips CP are transferred to the second pressure-sensitive adhesive sheet 200.

  The second pressure-sensitive adhesive sheet 200 preferably has heat resistance. When the sealing member to be described later is a thermosetting resin, for example, the curing temperature is about 120 ° C. to 180 ° C., and the heating time is about 30 minutes to 2 hours. The second pressure-sensitive adhesive sheet 200 preferably has heat resistance such that wrinkles do not occur when the sealing member is thermoset. Moreover, it is preferable that the 2nd adhesive sheet 200 is comprised with the material which can peel from semiconductor chip CP after a thermosetting process.

  The second adhesive sheet 200 may be attached to the plurality of semiconductor chips CP and the second ring frame. In this case, the second ring frame is placed on the third pressure-sensitive adhesive layer 202 of the second pressure-sensitive adhesive sheet 200, and this is lightly pressed and fixed. Thereafter, the third pressure-sensitive adhesive layer 202 exposed inside the ring shape of the second ring frame is pressed against the circuit surface W1 of the semiconductor chip CP to fix the plurality of semiconductor chips CP to the second pressure-sensitive adhesive sheet 200.

[First peeling step]
After sticking the 2nd adhesive sheet 200, the process (1st peeling process) which peels the adhesive sheet 100 is implemented. When the adhesive sheet 100 is peeled in the peeling step, the back surfaces W3 of the plurality of semiconductor chips CP are exposed. Even after the pressure-sensitive adhesive sheet 100 is peeled, it is preferable that the distance D1 between the plurality of semiconductor chips CP expanded in the expanding process is maintained. When the first pressure-sensitive adhesive layer 13 contains an energy ray-curable pressure-sensitive adhesive, the first pressure-sensitive adhesive layer 13 is irradiated with energy rays from the first base material layer 11 and the second base material layer 12 side. It is preferable to peel the pressure-sensitive adhesive sheet 100 after curing the energy beam polymerizable compound. The first adhesive layer 13 may be irradiated with energy rays at any stage after the semiconductor wafer W is adhered to the adhesive sheet 100 and before the adhesive sheet 100 is peeled off. Irradiation of energy rays may be performed after the dicing step or after the expanding step, for example. The energy rays may be irradiated in a plurality of times.

[Sealing process]
FIG. 4 shows a view for explaining a process (sealing process) for sealing a plurality of semiconductor chips CP using the sealing member 30.
The sealing process is performed after the transfer process. The sealing body 3 is formed by covering the plurality of semiconductor chips CP with the sealing member 30 while leaving the circuit surface W1. A sealing member 30 is also filled between the plurality of semiconductor chips CP. In this embodiment, since the circuit surface W1 and the circuit W2 are covered with the second adhesive sheet 200, it is possible to prevent the circuit surface W1 from being covered with the sealing member 30.

By the sealing process, the sealing body 3 in which a plurality of semiconductor chips CP separated by a predetermined distance are embedded in the sealing member is obtained. In the sealing step, the plurality of semiconductor chips CP are preferably covered with the sealing member 30 in a state where the distance D1 is maintained.
A method for covering the plurality of semiconductor chips CP with the sealing member 30 is not particularly limited. For example, a method is adopted in which a plurality of semiconductor chips CP are accommodated in a mold while the circuit surface W1 is covered with the second adhesive sheet 200, a fluid resin material is injected into the mold, and the resin material is cured. May be.
Further, a method of embedding the plurality of semiconductor chips CP in the sealing resin by placing the sheet-shaped sealing resin so as to cover the back surfaces W3 of the plurality of semiconductor chips CP and heating the sealing resin is adopted. May be. Examples of the material of the sealing member 30 include an epoxy resin. The epoxy resin used as the sealing member 30 may include, for example, a phenol resin, an elastomer, an inorganic filler, a curing accelerator, and the like.

[Second peeling step]
After the sealing step, a step of peeling the second pressure-sensitive adhesive sheet 200 from the sealing body 3 (second peeling step) is performed. When the second pressure-sensitive adhesive sheet 200 is peeled, the surface 3A that has been in contact with the circuit surface W1 of the semiconductor chip CP and the second pressure-sensitive adhesive sheet 200 of the sealing body 3 is exposed.

[Semiconductor package manufacturing process]
5 and 6 are diagrams for explaining a process for manufacturing a semiconductor package using a plurality of semiconductor chips CP. The present embodiment preferably includes a manufacturing process of such a semiconductor package.

[Rewiring layer formation process]
FIG. 5A shows a cross-sectional view of the sealing body 3 after the second pressure-sensitive adhesive sheet 200 is peeled off. In this embodiment, it is preferable to further include a rewiring layer forming step of forming a rewiring layer on the sealing body 3 after the second pressure-sensitive adhesive sheet 200 is peeled off. In the rewiring layer forming step, rewirings connected to the circuits W2 of the plurality of exposed semiconductor chips CP are formed on the circuit surface W1 and the surface 3A of the sealing body 3. In forming the rewiring, first, an insulating layer is formed on the sealing body 3.

  FIG. 5B is a cross-sectional view illustrating a process of forming the first insulating layer 41 on the circuit surface W1 of the semiconductor chip CP and the surface 3A of the sealing body 3. A first insulating layer 41 containing an insulating resin is formed on the circuit surface W1 and the surface 3A so as to expose the circuit W2 or the internal terminal electrode W4 of the circuit W2. Examples of the insulating resin include polyimide resin, polybenzoxazole resin, and silicone resin. The material of the internal terminal electrode W4 is not limited as long as it is a conductive material, and examples thereof include gold, silver, metals such as copper and aluminum, and alloys.

  FIG. 5C is a cross-sectional view illustrating a process of forming the rewiring 5 that is electrically connected to the semiconductor chip CP sealed in the sealing body 3. In the present embodiment, the rewiring 5 is formed following the formation of the first insulating layer 41. The material of the rewiring 5 is not limited as long as it is a conductive material, and examples thereof include gold, silver, metals such as copper and aluminum, and alloys. The rewiring 5 can be formed by a known method.

  FIG. 6A is a cross-sectional view illustrating a process of forming the second insulating layer 42 that covers the rewiring 5. The rewiring 5 has external electrode pads 5A for external terminal electrodes. The second insulating layer 42 is provided with an opening or the like to expose the external electrode pad 5A for the external terminal electrode. In the present embodiment, the external electrode pad 5A is exposed in the region of the semiconductor chip CP of the sealing body 3 (region corresponding to the circuit surface W1) and outside the region (region corresponding to the surface 3A on the sealing member 30). I am letting. The rewiring 5 is formed on the surface 3A of the sealing body 3 so that the external electrode pads 5A are arranged in an array. In the present embodiment, since the external electrode pad 5A is exposed outside the region of the semiconductor chip CP of the sealing body 3, a fan-out type WLP can be obtained.

[Connection process with external terminal electrode]
FIG. 6B is a cross-sectional view illustrating a process of connecting the external terminal electrode to the external electrode pad 5A of the sealing body 3. The external terminal electrode 6 such as a solder ball is placed on the external electrode pad 5A exposed from the second insulating layer 42, and the external terminal electrode 6 and the external electrode pad 5A are electrically connected by solder bonding or the like. The material of the solder ball is not particularly limited, and examples thereof include lead-containing solder and lead-free solder.

[Second dicing process]
FIG. 6C is a cross-sectional view illustrating a process (second dicing process) in which the sealing body 3 to which the external terminal electrode 6 is connected is singulated. In the second dicing process, the sealing body 3 is separated into individual semiconductor chips CP. The method for dividing the sealing body 3 into individual pieces is not particularly limited. For example, the sealing body 3 can be separated into pieces by adopting a method similar to the method of dicing the semiconductor wafer W described above. The step of dividing the sealing body 3 into pieces may be performed by sticking the sealing body 3 to an adhesive sheet such as a dicing sheet.

  By separating the sealing body 3 into pieces, the semiconductor package 1 in units of the semiconductor chip CP is manufactured. As described above, the semiconductor package 1 in which the external terminal electrode 6 is connected to the external electrode pad 5A fanned out outside the region of the semiconductor chip CP is manufactured as a fan-out type wafer level package (FO-WLP).

[Mounting process]
In the present embodiment, it is also preferable to include a step of mounting the separated semiconductor package 1 on a printed wiring board or the like.

  According to the pressure-sensitive adhesive sheet 100 according to this embodiment, the first base material layer 11 is a base material having dicing suitability, the second base material layer 12 is a base material having expandability suitability, and these are laminated. . For example, in the manufacturing method of the semiconductor device according to the present embodiment, since the adhesive sheet 100 is used, the semiconductor wafer W is adhered to the first adhesive layer 13, the semiconductor wafer W is diced, and then separated. Without expanding the adhesive sheet, the expanding step can be carried out while the semiconductor chips CP after dicing are adhered. Furthermore, since the breaking elongation of the 2nd base material layer 12 is 400% or more, according to the adhesive sheet 100, the space | interval of semiconductor chip CP can be expanded greatly. Therefore, according to the pressure-sensitive adhesive sheet 100 and the semiconductor device manufacturing method according to the present embodiment, the manufacturing process of the semiconductor device can be simplified. The pressure-sensitive adhesive sheet 100 can be suitably used in the FO-WLP process.

  In the method for manufacturing a semiconductor device according to the present embodiment, cutting is performed (half cut) so as to stop the cutting at a depth that does not reach the lower surface (second substrate surface 11b) of the first substrate layer 11. Therefore, even when a dicing blade is used in the dicing process, it is easy to prevent the dicing blade from reaching the second base material layer 12. Furthermore, after dicing by half-cutting, in the expanding step, the adhesive sheet 100 is expanded, so that the interval between the semiconductor chips CP can be greatly expanded while breaking the first base material layer 11. In addition, since the dicing line does not reach the second base material layer 12, it is possible to prevent the second base material layer 12 from being broken when the pressure-sensitive adhesive sheet 100 is expanded.

[Second Embodiment]
The pressure-sensitive adhesive sheet according to the second embodiment is different in structure from the pressure-sensitive adhesive sheet according to the first embodiment. In the method for manufacturing a semiconductor device, the second embodiment is different in terms of the depth of cut in the first dicing step. Since the second embodiment is almost the same as the first embodiment in other points, the description is omitted or simplified.

(Adhesive sheet)
FIG. 7 shows a cross-sectional view of the pressure-sensitive adhesive sheet 100A according to this embodiment.
The pressure-sensitive adhesive sheet 100 </ b> A includes a first base material layer 11, a second base material layer 12, a first pressure-sensitive adhesive layer 13, and a second pressure-sensitive adhesive layer 14. 100 A of adhesive sheets which concern on 2nd embodiment are the points provided with the 2nd adhesive layer 14 between the 1st base material layer 11 and the 2nd base material layer 12, and are the adhesive sheets which concern on 1st embodiment. 100.

  As shown in FIG. 7, the first base material layer 11 is provided between the first pressure-sensitive adhesive layer 13 and the second pressure-sensitive adhesive layer 14. The 1st adhesive layer 13 is provided in the 1st base material surface 11a side of the 1st base material layer 11, and the 2nd adhesive layer 14 is provided in the 2nd base material surface 11b side. In addition, the 1st base material layer 11 is the same as that of 1st embodiment.

  The 2nd base material layer 12 is provided in the 2nd base material surface 11b side of the 1st base material layer 11, as FIG. 7 shows. A second pressure-sensitive adhesive layer 14 is provided between the second base material layer 12 and the first base material layer 11. In addition, the 2nd base material layer 12 is the same as that of 1st embodiment.

-1st adhesive layer The adhesive contained in the 1st adhesive layer 13 is not specifically limited, but can apply widely. As an adhesive contained in the 1st adhesive layer 13, the adhesive similar to the adhesive demonstrated in 1st embodiment is mentioned, for example. In addition, the kind of adhesive is selected in consideration of the use, the kind of adherend to be attached, and the like. The 1st adhesive layer 13 may contain the energy ray hardening-type adhesive like 1st embodiment. In addition, the 1st adhesive layer 13 is the same as that of 1st embodiment.

-Second pressure-sensitive adhesive layer The thickness of the second pressure-sensitive adhesive layer 14 is preferably 2 μm or more and 30 μm or less, and more preferably 5 μm or more and 15 μm or less. If the thickness of the second pressure-sensitive adhesive layer 14 is 2 μm or more, in the first dicing process, the cutting depth is stopped in the middle of the second pressure-sensitive adhesive layer 14 so as not to reach the second base material layer 12. It becomes easy to do. In addition, after the first dicing step, the effect of preventing scattering of the separated semiconductor chips is improved. Moreover, if the thickness of the 2nd adhesive layer 14 is 30 micrometers or less, there exists an effect of suppressing the vibration at the time of dicing and preventing chip | tip chipping.

  The adhesive strength of the second pressure-sensitive adhesive layer 14 to the first base material layer 11 and the second base material layer 12 is preferably 1000 mN / 25 mm or more and 20000 mN / 25 mm or less, and preferably 3000 mN / 25 mm or more and 15000 mN / 25 mm or less. Is more preferable. If the adhesive force of the second pressure-sensitive adhesive layer 14 to the first base material layer 11 and the second base material layer 12 is 1000 mN / 25 mm or more, the first base material layer 11 and the second base material layer 12 have a predetermined strength or more. It will be in the state where it was pasted up with adhesive strength. Therefore, after the first dicing step, the effect of preventing the plurality of semiconductor chips from being detached from the pressure-sensitive adhesive sheet 100A or scattered is further improved. If the adhesive force of the second pressure-sensitive adhesive layer 14 to the first base material layer 11 and the second base material layer 12 is 20000 mN / 25 mm or less, it is possible to prevent the occurrence of problems such as chip chipping during dicing. When the adhesive force exceeds 20000 mN / 25 mm, the cohesive force of the adhesive is lowered, and the substrate may move during dicing, which may cause problems such as chip chipping.

In addition, in this specification, adhesive force can be measured by the 180 degree | times peeling method according to JISZ0237: 2009. For example, when measuring the adhesive force of the second pressure-sensitive adhesive layer 14 to the second base material layer 12, the following procedure can be used. First, the 2nd base material layer 12 is fixed to a support plate using a double-sided tape. A 25 mm wide tape in which the second adhesive layer 14 is laminated on the first base material layer 11 is produced. The tape and the second base material layer 12 are attached with the second pressure-sensitive adhesive layer 14 side facing the second base material layer 12. When sticking, a rubber roller weighing 2 kg is used. After sticking, this tape is peeled off from the second base material layer 12, and the adhesive force at the sticking interface between the second pressure-sensitive adhesive layer 14 and the second base material layer 12 is measured. When measuring the adhesive force with respect to the 1st base material layer 11 of the 2nd adhesive layer 14, it can replace and implement the 1st base material layer 11 and the 2nd base material layer 12 in the above-mentioned procedure.
When the pressure-sensitive adhesive layer contains an energy ray-curable pressure-sensitive adhesive, the adhesive strength after irradiation with energy rays is measured by the following method. After pasting in the same manner as described above, an energy beam is irradiated from the base material layer side of the pressure-sensitive adhesive sheet in a nitrogen atmosphere, and then measured. In the case where the pressure-sensitive adhesive layer contains an ultraviolet curable pressure-sensitive adhesive, the measured value is obtained after ultraviolet irradiation (illuminance: 230 mW / cm ² , light amount: 190 mJ / cm ² ).

  The pressure-sensitive adhesive contained in the second pressure-sensitive adhesive layer 14 is not particularly limited and can be widely applied. As an adhesive contained in the 2nd adhesive layer 14, the adhesive similar to the 1st adhesive layer 13 is mentioned, for example. However, the pressure-sensitive adhesive contained in the second pressure-sensitive adhesive layer 14 is selected in consideration of the material of the base material in order to maintain the state where the first base material layer 11 and the second base material layer 12 are bonded. Is done. Similar to the first pressure-sensitive adhesive layer 13, the second pressure-sensitive adhesive layer 14 may include an energy ray curable pressure-sensitive adhesive.

  As a combination of the first pressure-sensitive adhesive layer 13 and the second pressure-sensitive adhesive layer 14, the first pressure-sensitive adhesive layer 13 includes an energy ray-curable pressure-sensitive adhesive from the viewpoint that the productivity of the semiconductor device can be improved. The two pressure-sensitive adhesive layer 14 preferably does not contain an energy ray curable pressure-sensitive adhesive. With such a combination, for example, the pressure-sensitive adhesive sheet 100 </ b> A can be irradiated with energy rays to reduce the adhesive strength of the first adhesive layer 13 and maintain the adhesive strength of the second adhesive layer 14. Therefore, when peeling adhesive sheet 100A after a dicing process and an expanding process, it can be made easy to peel in the interface of a semiconductor chip and the 1st adhesive layer 13. FIG.

(Method for producing adhesive sheet)
The manufacturing method of adhesive sheet 100A is not specifically limited. For example, it can be manufactured by the following method.
The 1st base material layer 11 and the 2nd base material layer 12 can be laminated | stacked by employ | adopting the method of forming the conventional laminated body. Examples of the laminating method include a dry laminating method and a method of bonding the first base material layer 11 and the second base material layer 12 with an adhesive. In this embodiment, in these methods, the second pressure-sensitive adhesive layer 14 is formed between both layers using a pressure-sensitive adhesive according to the material of the first base material layer 11 and the second base material layer 12.
After laminating the first base material layer 11 and the second base material layer 12 via the second pressure-sensitive adhesive layer 14 to obtain a laminate, the first base material layer 11 on the first base material surface 11a An adhesive is applied to form a coating film. Next, this coating film is dried to form the first pressure-sensitive adhesive layer 13. Then, you may stick a peeling sheet so that the 1st adhesive layer 13 may be covered. Regarding the manufacturing method of the pressure-sensitive adhesive sheet 100A, other points can be performed in the same manner as in the first embodiment.

(Method for manufacturing semiconductor device)
A method for manufacturing a semiconductor device using the adhesive sheet 100A according to the present embodiment will be described.
In the method for manufacturing a semiconductor device according to the present embodiment, a semiconductor wafer is bonded to the first pressure-sensitive adhesive layer 13 of the pressure-sensitive adhesive sheet 100A (wafer bonding process), and the semiconductor wafer is separated into individual pieces by dicing. A step of forming a chip (dicing step), a step of extending the adhesive sheet 100A to increase the interval between the plurality of semiconductor chips (expanding step), and a step of transferring the plurality of semiconductor chips to the second adhesive sheet (transfer step) ), And after sticking the second pressure-sensitive adhesive sheet, a step of peeling the pressure-sensitive adhesive sheet 100A (first peeling step), a step of sealing a plurality of semiconductor chips using a sealing member (sealing step), After the sealing step, a step of peeling the second pressure-sensitive adhesive sheet from the sealing body (second peeling step) is performed.
This embodiment is different from the first embodiment in that the pressure-sensitive adhesive sheet 100A is used, and further differs in dicing conditions in the first dicing step. Below, a wafer sticking process, a dicing process, and an expanding process are explained, and since other processes can be carried out in the same manner as in the first embodiment, the explanation is omitted or simplified.

FIG. 8 is a schematic diagram for explaining a method for manufacturing a semiconductor device according to the present embodiment.
FIG. 8A shows a diagram for explaining the wafer sticking process. By performing the wafer sticking step, the semiconductor wafer W is stuck to the first pressure-sensitive adhesive layer 13 and bonded to the pressure-sensitive adhesive sheet 100A.

FIG. 8B shows a diagram for explaining the first dicing process.
The semiconductor wafer W held on the adhesive sheet 100A is separated into pieces by dicing to form a plurality of semiconductor chips CP. The cutting depth at the time of dicing is a depth that takes into account the sum of the thickness of the semiconductor wafer W, the thickness of the first pressure-sensitive adhesive layer 13, and the thickness of the first base material layer 11, and the wear of the dicing saw. Set.
In the present embodiment, a dicing blade is used to cut from the upper surface (first substrate surface 11a) side of the first substrate layer 11 and reach the lower surface (second substrate surface 11b) of the first substrate layer 11; Further, the cutting is stopped without reaching the lower surface of the second pressure-sensitive adhesive layer 14 by cutting from the upper surface side of the second pressure-sensitive adhesive layer 14. After the first dicing step, the plurality of semiconductor chips CP are held on the adhesive sheet 100A.

FIG. 8C shows a diagram for explaining the expanding process.
After dicing into a plurality of semiconductor chips CP by dicing, the adhesive sheet 100A is stretched to widen the interval between the plurality of semiconductor chips CP. The method for extending the pressure-sensitive adhesive sheet 100 in the expanding step is not particularly limited, and for example, the same method as in the first embodiment can be adopted.
By carrying out the expanding step, the second pressure-sensitive adhesive layer 14 that has been in a half-cut state is broken along a cut (dicing line) formed when it is cut with a dicing blade.
In the present embodiment, as shown in FIG. 8C, the distance between the semiconductor chips CP is D1. For example, the distance D1 is preferably 200 μm or more and 5000 μm or less. Since the breaking elongation of the second base material layer 12 is 400% or more, the distance between the semiconductor chips CP can be extended to the distance D1.
In the second embodiment, the steps after the dicing step can be performed in the same manner as in the first embodiment.

  According to the adhesive sheet 100A according to the present embodiment, the manufacturing process of the semiconductor device can be simplified as in the first embodiment. The pressure-sensitive adhesive sheet 100A can be suitably used in the FO-WLP process.

Since the pressure-sensitive adhesive sheet 100A includes the second pressure-sensitive adhesive layer 14 between the first base material layer 11 and the second base material layer 12, the pressure-sensitive adhesive sheet 100A is expanded and the first base material layer 11 is broken in the expanding step. It can prevent that the impact at the time of making it apply to the 2nd base material layer 12. FIG. Since the impact at the time of expansion can be buffered by the 2nd adhesive layer 14, it can prevent that the 2nd base material layer 12 will fracture | rupture with the 1st base material layer 11. FIG.
Further, since the thickness of the second pressure-sensitive adhesive layer 14 is 2 μm or more and 30 μm or less, it is easy to prevent the dicing blade from reaching the second base material layer 12 even when the first base material layer 11 is fully cut. Since notches are not formed in the second base material layer 12, it is possible to prevent the second base material layer 12 from breaking when the adhesive sheet 100A is expanded in the expanding step.

[Modification of Embodiment]
The present invention is not limited to the above-described embodiment. The present invention includes a modification of the above-described embodiment as long as the object of the present invention can be achieved.

  For example, a circuit or the like in a semiconductor wafer or a semiconductor chip is not limited to the illustrated arrangement or shape. The connection structure with the external terminal electrode in the semiconductor package is not limited to the mode described in the above embodiment. In the above-described embodiment, the aspect of manufacturing the FO-WLP type semiconductor package has been described as an example. However, the present invention can also be applied to an aspect of manufacturing other semiconductor packages such as a fan-in type WLP.

  Moreover, in the said embodiment, although the manufacturing method which advances to a sealing process after implementing an expand process once was mentioned as an example, you may implement an expand process in multiple times. In this case, the plurality of semiconductor chips CP held on the adhesive sheet are transferred to another expanding sheet while maintaining the expanded distance, and the expanded sheet is stretched to further increase the distance between the plurality of semiconductor chips CP. Can be expanded.

  Moreover, although said 2nd embodiment mentioned and demonstrated the example which cut | disconnected (half cut) to the middle of the thickness of the 2nd adhesive layer 14 in the 1st dicing process, this invention is such It is not limited to an aspect. For example, in the case of using the pressure-sensitive adhesive sheet 100A, the first dicing step in a mode in which the first base material layer 11 is in a half-cut state and no dicing line is formed on the second pressure-sensitive adhesive layer 14 and the second base material layer 12. It is good. In this case, the adhesive sheet 100A may be expanded in the subsequent expanding step, the first base material layer 11 may be broken, and the interval between the plurality of semiconductor chips CP may be expanded to a predetermined distance.

  The pressure-sensitive adhesive sheets 100 and 100A may be long sheets or may be provided in a state of being wound in a roll. The pressure-sensitive adhesive sheets 100 and 100A wound up in a roll shape can be used by being unwound from a roll and cut into a desired size.

  The present invention can be used as an adhesive sheet used in a method for manufacturing a semiconductor device.

  DESCRIPTION OF SYMBOLS 11 ... 1st base material layer, 11a ... 1st base material surface, 11b ... 2nd base material surface, 12 ... 2nd base material layer, 13 ... 1st adhesive layer, 14 ... 2nd adhesive layer, 30 ... Sealing member, 100 ... adhesive sheet, 100A ... adhesive sheet, CP ... semiconductor chip, W ... semiconductor wafer.

Claims (9)

A first substrate layer having a first substrate surface and a second substrate surface opposite to the first substrate surface;
A second substrate layer laminated on the second substrate surface side of the first substrate layer;
A first pressure-sensitive adhesive layer laminated on the first base material surface side of the first base material layer,
A second pressure-sensitive adhesive layer is provided between the first base material layer and the second base material layer,
The first base material layer includes an ethylene- (meth) acrylate copolymer resin as a main component,
The second base material layer includes a polyurethane resin as a main component,
The pressure-sensitive adhesive sheet, wherein the elongation at break of the second base material layer is 400% or more. The first base material layer is a film for a dicing sheet.
The pressure-sensitive adhesive sheet according to claim 1. The thickness of the second pressure-sensitive adhesive layer is 2 μm or more and 30 μm or less,
The pressure-sensitive adhesive sheet according to claim 1 or claim 2 . The adhesive force of the second pressure-sensitive adhesive layer to the first base material layer and the second base material layer is 1000 mN / 25 mm or more and 20000 mN / 25 mm or less,
The pressure-sensitive adhesive sheet according to any one of claims 1 to 3. The first pressure-sensitive adhesive layer includes an energy ray-curable pressure-sensitive adhesive,
The second pressure-sensitive adhesive layer does not contain an energy ray-curable pressure-sensitive adhesive,
The pressure-sensitive adhesive sheet according to any one of claims 1 to 4. It is an adhesive sheet for a process for producing a fan-out type wafer level package.
The pressure-sensitive adhesive sheet according to any one of claims 1 to 5 . A first substrate layer having a first substrate surface and a second substrate surface opposite to the first substrate surface; and a first substrate layer laminated on the first substrate surface side of the first substrate layer. One adhesive layer and a second substrate layer laminated on the second substrate surface side of the first substrate layer, and between the first substrate layer and the second substrate layer to comprise a second pressure-sensitive adhesive layer, wherein the first substrate layer, an ethylene - include (meth) acrylate copolymer resin as the main component, the second substrate layer comprises a polyurethane resin as a main component, the first The two base material layers are a step of attaching a semiconductor wafer to the first pressure-sensitive adhesive layer of the pressure-sensitive adhesive sheet having a breaking elongation of 400% or more,
Dividing the semiconductor wafer into individual pieces by dicing and forming a plurality of semiconductor chips;
Stretching the pressure-sensitive adhesive sheet to widen the interval between the plurality of semiconductor chips. In the step of dividing the semiconductor wafer into pieces, cutting from the upper surface side of the first base material layer using a dicing blade, stopping the cutting without reaching the lower surface of the first base material layer,
The method for manufacturing a semiconductor device according to claim 7 , wherein in the step of extending the pressure-sensitive adhesive sheet, the first base material layer is broken along a cut formed when the dicing blade cuts. The thickness of the second pressure-sensitive adhesive layer is Ri der 2μm above 30μm or less,
In the step of dividing the semiconductor wafer into pieces, a dicing blade is used to cut from the upper surface side of the first base material layer to reach the lower surface of the first base material layer, and further to the upper surface side of the second adhesive layer Cut from, stop cutting without reaching the lower surface of the second adhesive layer,
The method of manufacturing a semiconductor device according to claim 7 , wherein, in the step of extending the pressure-sensitive adhesive sheet, the second pressure-sensitive adhesive layer is broken along a cut formed when cut with the dicing blade.

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