JP6058414B2 - Manufacturing method of semiconductor chip - Google Patents

Description

  The present invention relates to a method for manufacturing a semiconductor chip, and more specifically, a so-called blade dicing method or tip dicing method and a mounting process employing flip chip bonding can be continuously performed, thereby simplifying the manufacturing process. The present invention also relates to a method for manufacturing a semiconductor chip that can contribute to improvement of product quality.

  2. Description of the Related Art In recent years, semiconductor devices have been manufactured using a so-called “face down” mounting method. In the face-down method, a semiconductor chip (hereinafter simply referred to as “chip”) having electrodes such as bumps on a circuit surface is used, and the electrodes are bonded to a substrate.

  A semiconductor chip is obtained by dividing a semiconductor wafer into pieces, and an adhesive film for die bonding (hereinafter simply referred to as “adhesive film”) may be used for bonding between an electrode provided on a circuit surface of a chip and a substrate. Is used).

  As a method for obtaining a chip having an adhesive film on a circuit surface, Patent Document 1 (Japanese Patent Laid-Open No. 2008-98427) discloses a method of laminating an adhesive film for die bonding on a circuit surface of a wafer and completely cutting the adhesive film. In addition, a groove having a depth of cut shallower than the wafer thickness is formed in the laminate of the adhesive film and the wafer from the wafer surface, and then a surface protective sheet is applied to the adhesive film, and the wafer is ground by backside grinding. Is described.

  The adhesive film is usually supplied in the state of an adhesive sheet laminated on the support film. In Patent Document 1, a surface protective sheet is directly laminated on an adhesive film attached to a wafer. Therefore, after sticking the adhesive film in the adhesive sheet having the support film and the adhesive film to the wafer, it is necessary to remove the support film in advance before laminating the surface protective sheet on the adhesive film. On the other hand, it is conceivable to perform backside grinding by attaching a surface protective sheet to the support film without removing the support film in advance. In this case, after leaving the adhesive film on the wafer, the surface protection sheet and the support film can be peeled and removed simultaneously as an integral unit. According to such a method, since the step of removing the support film in advance before the back surface grinding can be omitted, the manufacturing process of the semiconductor device can be simplified. However, the following problems have been found in such a method. When performing back surface grinding, the adhesive film and the surface protection sheet may be cut into substantially the same shape as the wafer. In this case, due to the inability to form a separation starting point between the surface protective sheet and the adhesive film, the surface protective sheet and the support film are simultaneously peeled off as a single piece after leaving the adhesive film on the wafer. It was difficult to remove.

JP 2008-98427 A

  The present invention has been made in view of the above circumstances. That is, an object of this invention is to provide the manufacturing method of the semiconductor chip which can obtain the semiconductor chip with an adhesive film by a simple method.

The present invention includes the following gist.
[1] (a) a step of attaching an adhesive sheet having an adhesive film for die bonding and a support film to a circuit surface of a semiconductor wafer having a circuit formed on the surface;
(B) a step of attaching a surface protection sheet to the surface of the support film opposite to the surface on which the adhesive film is laminated;
(C) a step of grinding the back surface of the semiconductor wafer;
(D) a step of peeling the surface protective sheet and the support film,
(E) cutting the support film into a shape similar to the wafer with a diameter smaller than the outermost diameter of the wafer, and (f) cutting the surface protective sheet into the same diameter as the outermost diameter of the wafer,
Steps (a) to (d) are performed in this order,
The step (e) is performed before the step (b),
A method for manufacturing a semiconductor chip, wherein the step (f) is performed before the step (c).

[2] (a ′) forming a groove having a depth shallower than the thickness of the wafer on the circuit surface of the semiconductor wafer having a circuit formed on the surface;
(B ′) a step of attaching an adhesive sheet having an adhesive film for die bonding and a support film to a circuit surface of a semiconductor wafer in which grooves are formed;
(C ′) a step of attaching a surface protective sheet to the surface of the support film opposite to the surface on which the adhesive film is laminated,
(D ′) a step of grinding the back surface of the semiconductor wafer to reduce the thickness of the wafer and dividing it into individual chips;
(E ′) a step of peeling the surface protective sheet and the support film,
(F ′) cutting the support film into a similar shape to the wafer with a diameter smaller than the outermost diameter of the wafer, and (g ′) cutting the surface protective sheet into the same diameter as the outermost diameter of the wafer,
Steps (a ′) to (e ′) are performed in this order,
The step (f ′) is performed before the step (c ′),
A method for manufacturing a semiconductor chip, wherein the step (g ′) is performed before the step (d ′).

[3] In step (e) or (f ′), the side surface of the support film is cut into a taper shape so that the surface of the support film in contact with the adhesive film has a larger area than the opposite surface [1] Or the manufacturing method of the semiconductor chip as described in [2].

  According to the method for manufacturing a semiconductor chip according to the present invention, in a manufacturing method capable of continuously performing a so-called blade dicing method or a tip dicing method and a mounting process employing flip chip bonding, An effect is obtained. That is, after leaving the adhesive film on the wafer, the surface protective sheet and the support film can be simultaneously peeled and removed as a single body. For this reason, the manufacturing process of the semiconductor chip with an adhesive film is simplified.

One process of the manufacturing method of the 1st semiconductor chip concerning this invention is shown. One process of the manufacturing method of the 1st semiconductor chip concerning this invention is shown. One process of the manufacturing method of the 1st semiconductor chip concerning this invention is shown. One process of the manufacturing method of the 1st semiconductor chip concerning this invention is shown. One process of the manufacturing method of the 1st semiconductor chip concerning this invention is shown. One process of the manufacturing method of the 1st semiconductor chip concerning this invention is shown. One process of the manufacturing method of the 2nd semiconductor chip concerning this invention is shown. One process of the manufacturing method of the 2nd semiconductor chip concerning this invention is shown. One process of the manufacturing method of the 2nd semiconductor chip concerning this invention is shown. One process of the manufacturing method of the 2nd semiconductor chip concerning this invention is shown.

Hereinafter, the present invention will be described more specifically with reference to the drawings, including the best mode.
The first method for manufacturing a semiconductor device according to the present invention includes the following steps (a) to (f).
(A) a step of attaching an adhesive sheet having an adhesive film for die bonding and a support film to a circuit surface of a semiconductor wafer having a circuit formed on the surface;
(B) a step of attaching a surface protection sheet to the surface of the support film opposite to the surface on which the adhesive film is laminated;
(C) a step of grinding the back surface of the semiconductor wafer;
(D) a step of peeling the surface protective sheet and the support film,
(E) cutting the support film into a shape similar to the wafer with a diameter smaller than the outermost diameter of the wafer, and (f) cutting the surface protective sheet into the same diameter as the outermost diameter of the wafer,
Steps (a) to (d) are performed in this order,
The step (e) is performed before the step (b),
A method of manufacturing a semiconductor chip, wherein the step (f) is performed before the step (d).

  Hereinafter, each step will be described. In the following, as an example of the method for manufacturing a semiconductor chip according to the present invention, the step (e) is performed between the step (a) and the step (b), and the step between the step (b) and the step (c). A method for performing step (f) will be described.

(A) Step (a) In step (a), an adhesive sheet 14 having a die bonding adhesive film 3 and a support film 4 is attached to the circuit surface of the semiconductor wafer 1 having a circuit formed on the surface (see FIG. 1).

  An adhesive film for die bonding (hereinafter may be simply referred to as “adhesive film”) is disposed on a picked-up chip circuit surface and used as a sealing resin for the circuit surface in the semiconductor chip manufacturing method of the present invention. When the chip is mounted, the space with the chip mounting substrate is filled and used for mutual fixation.

  As a resin used for such an adhesive film, in the process of adhering the adhesive film to the circuit surface of the wafer, it exhibits a certain degree of fluidity by heating and pressing force, follows the unevenness of the circuit surface well, and by heating A resin that exhibits adhesiveness is used. Examples of such resins include B-stage resins, adhesives, and thermoplastic resins.

  Examples of the B-stage resin used for the adhesive film include a layer made of a semi-cured epoxy resin.

  The adhesive used for the adhesive film refers to an adhesive that exhibits tackiness and fluidity at room temperature, is cured by heating, becomes non-flowable, and adheres firmly to the adherend. Examples of the adhesive include a mixture of a binder resin having a pressure-sensitive adhesive property at room temperature and a thermosetting resin.

  Examples of the binder resin having pressure-sensitive adhesive properties at room temperature include acrylic resins, polyester resins, polyvinyl ethers, urethane resins, and polyamides. As the thermosetting resin, for example, an epoxy resin, an acrylic resin, a polyimide resin, a phenol resin, a urea resin, a melamine resin, a resorcinol resin and the like are used, and preferably an epoxy resin. Moreover, it is preferable to mix | blend energy rays (ultraviolet rays etc.) curable resin, such as a urethane (meth) acrylate oligomer, in order to control peelability with the surface protection sheet mentioned later to an adhesive agent. When energy beam curable resin is mix | blended, a surface protection sheet will closely_contact | adhere with an adhesive layer before energy beam irradiation, and will become easy to peel after energy beam irradiation.

  Adhesives composed of the components as described above can be applied at normal temperature, and exhibit appropriate fluidity by heating and pressure-bonding force, and also have energy ray curability and heat curability, A resin layer without voids can be formed that follows the unevenness of the circuit surface well, adheres to the surface protection sheet when grinding the back surface, contributes to fixing the wafer, and mounts the chip and chip mounting substrate It can be used as an adhesive for bonding. And after heat curing, it can give a cured product with high impact resistance, and also has an excellent balance between shear strength and peel strength, and can maintain sufficient adhesive properties even under severe heat and humidity conditions. .

  The thermoplastic resin used for the adhesive film is a resin that is plasticized by heating and exhibits adhesiveness. As such a thermoplastic resin, a chemically and physically heat resistant resin such as a polyimide resin is preferable because the reliability of the semiconductor device is improved.

The thickness of the adhesive film 3 comprising the above components is usually 3 to 100 μm, preferably 3 to 95 μm, and particularly preferably about 5 to 85 μm. When bumps 2 are formed on the wafer surface, the circuit surface is covered without generation of voids, and the bumps 2 penetrate the adhesive film 3, so that the average height (H _B ) of the bumps 2 and adhesion The ratio (H _B / T _A ) to the thickness (T _A ) of the film 3 is preferably 1.0 / 0.5 to 1.0 / 2.0, more preferably 1.0 / 0.8 to 1. It is in the range of 0.0 / 1.2. The average height (H _B ) of the bumps 2 is the height from the chip surface (circuit surface excluding the bumps) to the top of the bumps.

  If the bump height is too high with respect to the thickness of the adhesive film 3, there is a gap between the chip surface (circuit surface excluding the bump) and the chip mounting substrate, causing voids. On the other hand, if the adhesive film is too thick, the bumps do not penetrate the adhesive layer, causing a conduction failure.

  As the support film 4, for example, polyethylene film, polypropylene film, polybutene film, polybutadiene film, polymethylpentene film, polyvinyl chloride film, vinyl chloride copolymer film, polyurethane film, ethylene vinyl acetate film, ionomer resin film, ethylene A film such as a (meth) acrylic acid copolymer film, an ethylene / (meth) acrylic acid ester copolymer film, or a fluororesin film is used. These crosslinked films are also used. Furthermore, these laminated films may be sufficient. Furthermore, these films may be transparent films, colored films or opaque films. However, when the support film is too hard, there is a risk of crushing the tops of the bumps, so it is particularly preferable to use a film having moderate elasticity. In order to transfer the adhesive film on the support film to the circuit surface of the chip (wafer), the support film and the adhesive film are laminated so as to be peelable. For this reason, the surface tension of the surface in contact with the adhesive film of the support film is preferably 40 mN / m or less, more preferably 37 mN / m or less, and particularly preferably 35 mN / m or less. Such a film having a low surface tension can be obtained by appropriately selecting the material, and a release agent such as a silicone resin or an alkyd resin is applied to the surface of the support film to perform a release treatment. Can also be obtained.

  An adhesive sheet may be used as a support film. In this embodiment, the adhesive film is laminated on the pressure-sensitive adhesive layer provided on the support film. As a base material of an adhesive sheet, said film illustrated as the support film 4 in the case of not having an adhesive layer is mentioned. The pressure-sensitive adhesive layer may be a weakly-adhesive layer having such an adhesive strength that the adhesive film can be peeled off, or an energy-ray-curable layer whose adhesive force is reduced by energy beam irradiation. . The pressure-sensitive adhesive layer is energy ray curable, and the region where the adhesive film is laminated may be preliminarily irradiated with energy rays to reduce the tackiness.

  The pressure-sensitive adhesive layer includes various conventionally known pressure-sensitive adhesives (for example, rubber-based, acrylic-based, silicone-based, urethane-based, vinyl ether-based general-purpose pressure-sensitive adhesives, pressure-sensitive adhesives, energy ray-curable pressure-sensitive adhesives, A thermal expansion component-containing pressure-sensitive adhesive or the like).

  The thickness of such a support film is usually about 10 to 500 μm, preferably about 15 to 300 μm, and particularly preferably about 20 to 250 μm.

  Examples of the semiconductor wafer 1 include conventionally used semiconductor wafers such as a silicon semiconductor wafer and a gallium / arsenic semiconductor wafer, but are not limited thereto, and various semiconductor wafers can be used. Formation of a circuit on the wafer surface can be performed by various methods including conventionally used methods such as an etching method and a lift-off method. In the wafer circuit formation process, a predetermined circuit is formed. Further, it is desirable that conductive protrusions (bumps) 2 used for electrical connection with the chip mounting substrate are formed on the circuit surface. The height and diameter of the bump 2 vary depending on the design of the semiconductor device, but generally the height is about 10 to 300 μm and the diameter is about 10 to 300 μm. Such bumps 2 are often formed from a metal such as gold, copper, or solder. The shape of the bump 2 is not particularly limited, and examples thereof include a columnar shape and a spherical shape, and a shape in which a hemisphere is placed on the tip of the column as shown in FIG.

  A method for attaching the adhesive film 3 to the surface of the wafer 1 is not particularly limited, and is performed by a general-purpose method using a tape mounter or the like. When sticking an adhesive sheet on the surface of the wafer 1, the adhesive film 3 is transferred to the surface of the wafer 1 and the support film 4 is peeled off. Further, the adhesive film 3 and the support film 4 may be cut in advance in substantially the same shape as the semiconductor wafer 1, and after the film is attached to the wafer, the excess film may be cut and removed along the outer periphery of the wafer. Good.

(E) Step In the step (e), the support film 4 is cut to have a diameter smaller than the outermost diameter of the wafer 1 and similar to the wafer. When cutting the support film 4 in the adhesive sheet attached to the wafer 1, it is preferable to cut the adhesive film 3 together with the support film 4.
Specifically, as shown in FIG. 2, it is preferable to cut the side surface of the support film 4 in a tapered shape so that the surface of the support film 4 that contacts the adhesive film 3 has a larger area than the opposite surface. . By cutting the side surface of the support film 4 in a tapered shape, the surface opposite to the surface of the support film 4 that contacts the adhesive film 3 becomes smaller than the outermost diameter of the adhesive film 3 or the wafer 1, and in plan view The wafer 1 and the support film 4 have a similar shape.
Moreover, as shown in FIG. 2, it is more preferable to cut the side surface of the adhesive film 3 in a tapered shape so that the surface of the adhesive film 3 that contacts the wafer 1 has a larger area than the opposite surface. By cutting the side surface of the adhesive film 3 into a taper shape, the surface of the adhesive film 3 opposite to the surface in contact with the wafer 1 becomes smaller than the outermost diameter of the wafer 1, and the wafer 1 and the adhesive film are seen in plan view. 3 is similar.

  The cutting method of the support film 4 and the adhesive film 3 is not particularly limited. Moreover, you may cut | disconnect the adhesive film 3 in a process different from a (e) process.

(B) Step (b) In the step (b), a surface protective sheet 7 is attached to the surface of the support film 4 opposite to the surface on which the adhesive film 3 is laminated (see FIG. 3).
The surface protective sheet 7 is attached to hold the wafer 1 and protect the circuit surface in a back surface grinding step (step (c)) described later.

  As the surface protective sheet 7, various pressure-sensitive adhesive sheets used for this kind of application are used without particular limitation.

  The surface protective sheet 7 may itself be a resin film having a tack, or may be a pressure-sensitive adhesive sheet having a pressure-sensitive adhesive layer on the surface of the resin film.

  The thickness of the surface protective sheet 7 is usually 20 to 1000 μm, preferably 50 to 250 μm. When the surface protection sheet 7 has an adhesive layer, among the above thicknesses, the thickness of the adhesive layer is 5 to 500 μm, preferably 10 to 100 μm. In addition, the method of sticking a surface protection sheet is not specifically limited, It carries out by the general purpose method using a tape mounter etc. similarly to the (a) process. In addition, as shown in FIG. 3, the surface protection sheet 7 follows the side surface of an adhesive sheet by (b) process.

(F) Step In the step (f), the surface protective sheet 7 is cut to the same diameter as the outermost diameter of the wafer 1 (see FIG. 4). The cutting method of the surface protection sheet 7 is not particularly limited. In the step (f), the surface protection sheet 7 is cut into a portion having the same shape as the wafer 1 (wafer surface protection portion) and the other portion (remaining portion). By removing the remaining part of the surface protective sheet 7, it is possible to prevent the back surface grinding apparatus such as a grinder from winding the remaining part of the surface protective sheet 7 and contaminating the apparatus in the step (c) described later. “The same diameter as the outermost diameter of the wafer 1” means that the diameter of the surface protective sheet after cutting is not more than the length obtained by adding 2 mm to the outermost diameter of the wafer, and 2 mm is subtracted from the outermost diameter of the wafer. It means that it is more than length. When the diameter of the surface protective sheet 7 after cutting is in such a range, the problem of vibration of the end portion of the surface protective sheet not attached to the wafer 1 during grinding is suppressed, and the effect of the present invention is obtained. Will be.

(C) Step (c) In the step (c), the back surface of the semiconductor wafer 1 is ground. The back surface grinding of the wafer 1 is performed by a method using a grinder or the like. By the backside grinding, the thickness of the wafer 1 is reduced, and the thickness is 20 to 500 μm.

(D) Step In the step (d), the surface protective sheet 7 is peeled off (see FIG. 5). In the present invention, the surface protective sheet 7 follows the side surface of the support film 4 because the support film 4 is cut in a similar shape to the wafer 1 with a diameter smaller than the outermost diameter of the wafer 1 in the step (e) described above. Due to this, the support film 4 can be peeled off simultaneously with the peeling of the surface protective sheet 7. That is, it is easy to peel and remove the surface protective sheet 7 and the support film 4 together as a single unit while leaving the adhesive film 3 on the wafer without the surface protective sheet 7 being peeled off from the support film 4. Become. The method for peeling the surface protective sheet 7 is not particularly limited.

  In addition, it is preferable to perform the process of sticking the adhesive sheet 13 on the back surface of the semiconductor wafer 1 between the process (c) and the process (d) (see FIG. 5). The pressure-sensitive adhesive sheet 13 is obtained by forming the pressure-sensitive adhesive layer 11 on the substrate 12.

  As the pressure-sensitive adhesive layer 11, various pressure-sensitive adhesives are used without particular limitation, but a so-called re-peeling weak pressure-sensitive adhesive or an ultraviolet curable pressure-sensitive adhesive capable of reducing the adhesive force by ultraviolet irradiation is preferable.

  As the weak pressure-sensitive adhesive, conventionally known pressure-sensitive adhesives such as acrylic, polyester, and natural rubber are used without particular limitation. Among these, an acrylic pressure-sensitive adhesive is preferable, and an acrylic pressure-sensitive adhesive having an acrylic ester as a main constituent unit is particularly preferable. The adhesive strength of such a weak adhesive is such that the adherend can be sufficiently fixed during the processing of the adherend such as a semiconductor wafer or a chip, and the chip can be easily picked up after the required process is completed. Any adhesive force may be used.

  Examples of the ultraviolet curable adhesive include those described in JP-A-60-196,956, JP-A-60-223,139, JP-A-5-32946, JP-A-8-27239, and the like. There are no particular restrictions on what is used. Such an ultraviolet curable pressure-sensitive adhesive has a sufficient adhesive force to the adherend before irradiation with ultraviolet rays, and the adhesive force significantly decreases after irradiation with ultraviolet rays. That is, the adherend is held with a sufficient adhesive force before the ultraviolet irradiation, but the obtained chip can be easily peeled after the ultraviolet irradiation.

  The thickness of the pressure-sensitive adhesive layer is preferably 1 to 100 μm, more preferably 3 to 80 μm, and particularly preferably 5 to 50 μm.

  Although it does not specifically limit as the base material 12, For example, polyethylene films, such as a low density polyethylene (LDPE) film, a linear low density polyethylene (LLDPE) film, a high density polyethylene (HDPE) film, a polypropylene film, a polybutene film, Polybutadiene film, polymethylpentene film, polyvinyl chloride film, vinyl chloride copolymer film, polyethylene terephthalate film, polybutylene terephthalate film, polyurethane film, polyimide film, ethylene vinyl acetate copolymer film, ionomer resin film, ethylene (Meth) acrylic acid copolymer film, ethylene / (meth) acrylic acid ester copolymer film, polystyrene film, polycarbonate film , Fluororesin film, and a film composed of the hydrogenated product or modified product, etc. are used. These crosslinked films and copolymer films are also used. The above-mentioned base material may be one kind alone, or may be a composite film in which two or more kinds are combined.

  Moreover, when using an ultraviolet-ray as an energy ray irradiated in order to harden the adhesive layer 11, the base material which has a transmittance | permeability with respect to an ultraviolet-ray is preferable. In addition, when using an electron beam as an energy ray, the base material does not need to be light-transmitting. It is preferable that the base material is colored because an operator can visually recognize that the pressure-sensitive adhesive sheet is attached to the adherend (semiconductor wafer 1). When visibility of the adherend surface is required, the substrate is preferably transparent.

  Moreover, in order to improve adhesiveness with an adhesive layer, you may give a corona treatment or a primer layer in the upper surface of the base material 12, ie, the base material surface in the side in which the adhesive layer 11 is provided. Moreover, you may apply various coating films on the opposite surface to an adhesive layer. The pressure-sensitive adhesive sheet 13 in the present invention is manufactured by providing the pressure-sensitive adhesive layer 11 on one side of the substrate 12. The thickness of the base material 12 is preferably 20 to 200 μm, more preferably 25 to 110 μm, and particularly preferably 50 to 90 μm. When the thickness of the base material 12 is large, the force against the bending of the base material 12 becomes large, and the peeling angle at the time of pick-up is difficult to increase. For this reason, the force required for pick-up increases and the pick-up property may be inferior. When the thickness of the base material 12 is small, film formation may be difficult depending on the material.

  The method of providing the pressure-sensitive adhesive layer on the surface of the base material comprises forming a pressure-sensitive adhesive layer by applying the pressure-sensitive adhesive composition constituting the pressure-sensitive adhesive layer to a predetermined thickness on the release sheet, The surface of the substrate may be transferred, or the pressure-sensitive adhesive composition may be directly applied to the surface of the substrate to form a pressure-sensitive adhesive layer. As a peeling sheet, the same thing as the support film mentioned above can be used. In addition, the method of sticking the adhesive sheet 13 is not specifically limited, It carries out by the general purpose method using a tape mounter etc. similarly to the (a) process.

  Thereafter, the semiconductor chip 10 having the die bonding adhesive film 3 on the circuit surface can be obtained through a process of separating the semiconductor wafer 1 and the die bonding adhesive film 3 for each circuit (see FIG. 6). In the step of dividing the semiconductor wafer 1 and the die bonding adhesive film 3 into individual circuits, the laminated body of the semiconductor wafer 1 and the adhesive film 3 is diced for each circuit formed on the wafer surface.

  Dicing is performed so as to cut both the wafer 1 and the adhesive film 3. Dicing is not particularly limited. For example, as shown in FIG. 7, when dicing a wafer, after the outer peripheral portion of the adhesive sheet 13 is fixed by the ring frame 5, a rotating round blade such as a dicing blade 15 is used. And a method of making a wafer into chips by the above method. The depth of cut into the pressure-sensitive adhesive sheet 13 by dicing is only required to completely cut the adhesive film 3 and the wafer 1, and is preferably 0 to 30 μm from the interface between the wafer 1 and the pressure-sensitive adhesive sheet 13. By reducing the amount of cut into the base material 12, it is possible to suppress the melting of the base material 12 due to the friction of the dicing blade 15 and the occurrence of burrs and the like in the base material 12.

  Next, the adhesive sheet 13 and the semiconductor chip 10 are peeled off by picking up the diced semiconductor chip 10 with an adhesive film by a general-purpose means such as a collet. Moreover, in order to improve the pick-up property of the chip 10, the adhesive sheet 13 may be expanded. As a result, the semiconductor chip 10 (semiconductor chip 10 with an adhesive film) having the adhesive film 3 for die bonding on the circuit surface is obtained.

A semiconductor chip with an adhesive film can be obtained by the steps (a) to (f) described above.
In the above semiconductor chip manufacturing method, the method (e) is performed between the steps (a) and (b), and the step (f) is performed between the steps (b) and (c). However, the step (e) may be performed before the step (b), and the step (f) may be performed before the step (c). For example, before the step (a), the step (e) is performed, and in the step (a), an adhesive film and an adhesive sheet having a support film that is smaller than the outermost diameter of the wafer and cut in a similar shape to the wafer are obtained. Alternatively, it may be attached to the circuit surface of the wafer.

  Alternatively, the step (f) may be performed first, and then the support film in the adhesive sheet attached to the wafer may be simultaneously cut together with the adhesive film to perform the step (e). In this case, the support film obtained in the step (e) and the surface protective sheet obtained in the step (f) are laminated concentrically (step (b)), and then the steps (c) and (d). As a result, a semiconductor chip is manufactured. Even in such a case, the area of the support film on the laminated surface of the support film and the surface protective sheet is smaller than the area of the surface protective sheet on the laminated surface. Therefore, the surface protective sheet follows the side surface of the adhesive sheet (see FIG. 4), and the surface protective sheet and the support film can be peeled and removed at the same time while leaving the adhesive film on the wafer.

Next, the manufacturing method of the 2nd semiconductor chip concerning this invention is demonstrated. The second method for manufacturing a semiconductor chip according to the present invention includes the following steps (a ′) to (g ′).
(A ′) forming a groove having a depth shallower than the thickness of the wafer on the circuit surface of the semiconductor wafer having a circuit formed on the surface;
(B ′) a step of attaching an adhesive sheet having an adhesive film for die bonding and a support film to a circuit surface of a semiconductor wafer in which grooves are formed;
(C ′) a step of attaching a surface protective sheet to the surface of the support film opposite to the surface on which the adhesive film is laminated,
(D ′) a step of grinding the back surface of the semiconductor wafer to reduce the thickness of the wafer and dividing it into individual chips;
(E ′) a step of peeling the surface protective sheet and the support film,
(F ′) cutting the support film into a similar shape to the wafer with a diameter smaller than the outermost diameter of the wafer, and (g ′) cutting the surface protective sheet into the same diameter as the outermost diameter of the wafer,
Steps (a ′) to (e ′) are performed in this order,
The step (f ′) is performed before the step (c ′),
A method for manufacturing a semiconductor chip, wherein the step (g ′) is performed before the step (d ′).

  Hereinafter, each step will be described. The step (b ′) is the same as the step (a), the step (c ′) is the same as the step (b), the step (e ′) is the same as the step (d), The step (f ′) is the same as the step (e), and the step (g ′) is the same as the step (f). In the following, as in the first semiconductor device manufacturing method according to the present invention, as an example, the (f ′) step is performed between the (b ′) step and the (c ′) step, and (c A method for performing the step (g ′) between the step “) and the step (d ′) will be described.

(A ′) Step (a ′) In the step (a ′), a groove 6 having a depth shallower than the thickness of the wafer is formed on the circuit surface of the semiconductor wafer 1 on which a circuit is formed (see FIG. 7).
The method for forming the groove 6 is not particularly limited. For example, a known technique such as attaching the wafer 1 to a dicing tape, fixing the peripheral portion of the dicing tape with a ring frame, and then using a rotating round blade such as a dicing blade. Thus, a groove having a depth shallower than the thickness of the wafer can be formed. The depth of the groove 6 is not particularly limited, and is preferably about 1 to 50 μm, more preferably about 20 to 40 μm larger than the thickness of the chip obtained in the step (d ′) described below.

(D ′) Step (d ′) In the step (d ′), the back surface of the semiconductor wafer is ground to reduce the thickness of the wafer and to divide it into individual chips 10 (see FIG. 8). Wafer backside grinding is performed by a method using a grinder or the like. The wafer is thinned by back grinding, and the wafer is divided into individual chips 10 when the wafer reaches the groove formed in the step (a ′).

  After the step (d ′) and before the step (e ′) or after the step (e ′), the die bonding adhesive film 3 existing between the chips is cut into the same shape as the chip 10. The step of obtaining a group of chips 100 having the die bonding adhesive film 3 on the circuit surface is preferably performed. FIG. 9 shows a case where this process is performed after the process (d ′) and before the process (e ′). The method for cutting the adhesive film is not particularly limited, and examples thereof include a method of cutting the die bonding adhesive film 3 into the same shape as the chip 10 by irradiating the die bonding adhesive film 3 exposed between the chips. . Such a method can be performed by a known laser dicing method.

  In addition, it is preferable to perform the process of sticking the adhesive sheet 13 on the back surface of the group of chips 100 after the process (d ′) and before the process (e ′) (see FIG. 10). The pressure-sensitive adhesive sheet 13 and the method for attaching the pressure-sensitive adhesive sheet 13 are as described in the first method for manufacturing a semiconductor device according to the present invention.

A semiconductor chip with an adhesive film can be obtained by the steps (a ′) to (g ′) as described above.
In the above semiconductor chip manufacturing method, the (f ′) step is performed between the (b ′) step and the (c ′) step, and the (g ′) step and the (d ′) step (g Although the method for performing the step ') has been described, the step (f') may be performed before the step (c '), and the step (g') may be performed before the step (d '). For example, the step (f ′) is performed before the step (a ′), and in the step (b ′), an adhesive film and a support film that is smaller than the outermost diameter of the wafer and is cut in a similar shape to the wafer are included. An adhesive sheet may be attached to the circuit surface of the wafer.

  Alternatively, the step (g ′) may be performed first, and then the support film on the adhesive sheet attached to the wafer may be cut simultaneously with the adhesive film (f ′). In this case, the support film obtained in the step (f ′) and the surface protective sheet obtained in the step (g ′) are concentrically laminated (step (c ′)), and then the step (d ′). By performing the step (e ′), a semiconductor chip is manufactured. Even in such a case, the area of the support film on the laminated surface of the support film and the surface protective sheet is smaller than the area of the surface protective sheet on the laminated surface. Therefore, the surface protective sheet follows the side surface of the adhesive sheet (see FIG. 9), and the surface protective sheet and the support film can be peeled and removed at the same time while leaving the adhesive film on the wafer.

  The semiconductor chip with an adhesive film obtained by the first and second semiconductor chip manufacturing methods according to the present invention described above is then picked up. The pick-up of the semiconductor chip with the adhesive film may be performed directly from the pressure-sensitive adhesive sheet 13, or after the semiconductor chip with the adhesive film is transferred from the pressure-sensitive adhesive sheet 13 to another pressure-sensitive adhesive sheet, the semiconductor chip with the adhesive film is transferred from the other pressure-sensitive adhesive sheet. May be picked up. As such another pressure-sensitive adhesive sheet, a pressure-sensitive adhesive sheet having appropriate pressure-sensitive adhesiveness and removability is preferable, and in particular, an ultraviolet curable pressure-sensitive adhesive sheet that has been conventionally used as a dicing sheet is preferably used.

  The semiconductor chip with an adhesive film can be picked up by a known method using a suction collet or the like. Moreover, you may push up the chip | tip with an adhesive film from the back surface side of the adhesive sheet 13 or another adhesive sheet with a push-up pin as needed.

  The picked-up semiconductor chip with an adhesive film may proceed to the next process as it is or through a chip reversal process, or once stored on a transfer tape or in a storage container and used in the next process as necessary. Also good.

  Then, the semiconductor chip with an adhesive film is placed on a predetermined position such as an electrode portion of the chip mounting substrate via the adhesive film 3. Specifically, a chip having the adhesive film 3 on the circuit surface side is placed on a predetermined chip mounting substrate by a face-down method. In a chip having bumps, the bumps are placed so as to face corresponding terminal portions on the chip mounting substrate.

  Thereafter, the die-bonded semiconductor chip with an adhesive film is heated to fix the chip to the chip mounting substrate. As described above, the adhesive film 3 is formed from a B-stage resin, an adhesive, a thermoplastic resin, or the like that exhibits adhesiveness by heating. By heating these under predetermined conditions, if it is a B-stage resin, the adhesiveness is manifested by curing of the resin, and if it is an adhesive, the adhesiveness is exhibited by curing of the thermosetting resin contained therein. To express. Moreover, if it is a thermoplastic resin, adhesive force will be expressed by heat sealing.

  After die bonding (flip chip bonding) in this way, a semiconductor device can be obtained through a normal process such as resin sealing, if necessary.

  As mentioned above, although the manufacturing method of the semiconductor chip of this invention was demonstrated along drawing, this invention is not limited to the manufacturing method of the semiconductor chip of the said structure, It applies to the manufacturing method of the semiconductor chip which has various structures. it can.

1: Semiconductor wafer 2: Bump 3: Adhesive film 4: Support film 5: Ring frame 7: Surface protection sheet 10: Semiconductor chip 13: Adhesive sheet 14: Adhesive sheet

Claims (3)

(A) a step of attaching an adhesive sheet having an adhesive film for die bonding and a support film to a circuit surface of a semiconductor wafer having a circuit formed on the surface;
(B) a step of attaching a surface protection sheet to the surface of the support film opposite to the surface on which the adhesive film is laminated;
(C) a step of grinding the back surface of the semiconductor wafer;
(D) a step of peeling the surface protective sheet and the support film,
(E) cutting the support film into a shape similar to the wafer with a diameter smaller than the outermost diameter of the wafer, and (f) cutting the surface protective sheet into the same diameter as the outermost diameter of the wafer,
Steps (a) to (d) are performed in this order,
The step (e) is performed before the step (b),
A method for manufacturing a semiconductor chip, wherein the step (f) is performed before the step (c). (A ′) forming a groove having a depth shallower than the thickness of the wafer on the circuit surface of the semiconductor wafer having a circuit formed on the surface;
(B ′) a step of attaching an adhesive sheet having an adhesive film for die bonding and a support film to a circuit surface of a semiconductor wafer in which grooves are formed;
(C ′) a step of attaching a surface protective sheet to the surface of the support film opposite to the surface on which the adhesive film is laminated,
(D ′) a step of grinding the back surface of the semiconductor wafer to reduce the thickness of the wafer and dividing it into individual chips;
(E ′) a step of peeling the surface protective sheet and the support film,
(F ′) cutting the support film into a similar shape to the wafer with a diameter smaller than the outermost diameter of the wafer, and (g ′) cutting the surface protective sheet into the same diameter as the outermost diameter of the wafer,
Steps (a ′) to (e ′) are performed in this order,
The step (f ′) is performed before the step (c ′),
A method for manufacturing a semiconductor chip, wherein the step (g ′) is performed before the step (d ′). In the step (e) or the step (f ′), the side surface of the support film is cut into a tapered shape so that the surface of the support film in contact with the adhesive film has a larger area than the opposite surface. The manufacturing method of the semiconductor chip of description.

Images