KR20210123318A - Expand method and semiconductor device manufacturing method - Google Patents

Abstract

A step of stretching the first sheet 10 to which the plurality of semiconductor devices CP is adhered to thereby widening the distance between the plurality of semiconductor devices CP is included, wherein each of the plurality of semiconductor devices CP is a first semiconductor device It has a surface W1 and a second semiconductor device surface W3 opposite to the first semiconductor device surface W1, and each of the plurality of semiconductor devices CP includes a second semiconductor device surface W3 and a first sheet ( 10) An expand method in which a protective layer 100 is included and adhered therebetween.

Description

Expand method and semiconductor device manufacturing method

The present invention relates to an expand method and a method for manufacturing a semiconductor device.

In recent years, miniaturization, weight reduction, and high functionality of electronic devices are progressing. The size reduction, thickness reduction, and density increase are calculated|required also for the semiconductor device mounted in an electronic device. A semiconductor chip may be mounted in the package close|similar to the size. Such a package is also called a Chip Scale Package (CSP). As one of CSPs, a wafer level package (Wafer Level Package; WLP) is mentioned. In WLP, an external electrode etc. are formed in a wafer before it is divided into pieces by dicing, and, finally, a wafer is diced and divided into pieces. WLP includes a fan-in type and a fan-out type. In the fan-out type WLP (hereinafter, sometimes abbreviated as "FO-WLP"), the semiconductor chip is covered with a sealing member so as to have a larger area than the chip size to form a semiconductor chip encapsulation body, , a redistribution layer and an external electrode are formed not only on the circuit surface of the semiconductor chip but also on the surface region of the sealing member.

For example, in Patent Document 1, for a plurality of semiconductor chips separated into pieces from a semiconductor wafer, the circuit formation surface is left, a mold member is used to surround the periphery to form an expanded wafer, and rewiring is performed in a region other than the semiconductor chip. A method of manufacturing a semiconductor package formed by extending a pattern is disclosed. In the manufacturing method described in Patent Document 1, before enclosing a plurality of individualized semiconductor chips with a mold member, they are replaced with an expandable wafer mount tape, and the wafer mount tape is spread and spread to a plurality of semiconductor chips increasing the distance between them.

Moreover, in patent document 2, it is equipped with a 2nd base material layer, a 1st base material layer, and a 1st adhesive layer in this order, The break elongation of a 2nd base material layer is 400 % or more, The adhesive sheet is described. The manufacturing method of the semiconductor device of patent document 2 separates the process of affixing a semiconductor wafer to the 1st adhesive layer of this adhesive sheet, and dicing a semiconductor wafer, and forms a some semiconductor chip. The process of doing this, and the process of extending an adhesive sheet and widening the space|interval between semiconductor chips are provided.

International Publication No. 2010/058646 Japanese Laid-Open Patent Publication No. 2017-076748

The tape used for an expand process usually has an adhesive layer in order to fix the semiconductor chip on a tape, and the base material for supporting an adhesive layer. When the wafer mount tape for expand is stretched as described in Patent Document 1, not only the base material of the tape but also the pressure-sensitive adhesive layer is stretched. When a semiconductor chip is peeled from an adhesive layer after an expand process, the problem that an adhesive layer remains on the surface of the semiconductor chip which was in contact with the adhesive layer may arise. In this specification, such a problem may be called pool residual.

Moreover, when an expand process is implemented using the adhesive sheet of patent document 2, since the adhesive layer which is in contact with a semiconductor chip is not stretched, it is thought that it is hard to generate|occur|produce glue residue. However, since the adhesive sheet described in Patent Document 2 has a tape configuration in which a second base layer, a first base layer, and a first adhesive layer are laminated, a more simple tape constitution can be used to prevent glue residue. There is a desire for a pandas method. In addition, in the process of patent document 2, the semiconductor wafer on an adhesive sheet is diced, without transcribe|transferring to another adhesive sheet, an adhesive sheet is stretched as it is, and an expand process is implemented. Therefore, it is necessary to carefully control the cutting depth of the dicing blade so that the dicing blade at the time of dicing does not reach the 2nd base material layer, and the expand method which can prevent glue residue by a simpler method. There is also a desire for

Moreover, as a to-be-adhered body supported on the adhesive sheet in the expand method, not only a semiconductor chip, but semiconductor devices, such as a wafer, a semiconductor device package, and a microLED, are mentioned, for example. Also in these semiconductor devices, similarly to a semiconductor chip, the space|interval between semiconductor devices may be extended.

It is an object of the present invention to provide an expand method capable of suppressing glue retention while simplifying at least any of a tape configuration and a process compared to the prior art, and a method for manufacturing a semiconductor device including the expanding method is to provide

According to one aspect of the present invention, the method includes the step of stretching a first sheet to which a plurality of semiconductor devices are adhered to thereby widening an interval between the plurality of semiconductor devices, wherein each of the plurality of semiconductor devices is a surface of the first semiconductor device. and a second semiconductor device surface opposite to the first semiconductor device surface, wherein each of the plurality of semiconductor devices includes a protective layer between the first semiconductor device surface or the second semiconductor device surface and the first sheet. Including, an adhered expand method is provided.

In the expand method according to one aspect of the present invention, it is preferable to adhere the plurality of semiconductor devices to the first sheet after the protective layer is formed on the surface of the first semiconductor device.

In the expand method according to one aspect of the present invention, it is preferable to obtain the plurality of semiconductor devices by dicing the object to be processed.

In the expand method according to one aspect of the present invention, it is preferable that the protective layer is formed on the object to be processed, and the object and the protective layer are diced to obtain the plurality of semiconductor devices.

In the expand method according to an aspect of the present invention, the object to be processed on which the protective layer is formed is adhered to the second pressure-sensitive adhesive layer of a second pressure-sensitive adhesive sheet having a second pressure-sensitive adhesive layer and a second substrate, and the protective layer and dicing the object to be processed to obtain the plurality of semiconductor devices, and affixing the first sheet to the protective layer after dicing.

In the expand method according to one aspect of the present invention, after the first sheet is adhered to the protective layer after dicing, it is preferable to peel the second adhesive sheet.

In the expand method according to one aspect of the present invention, the object to be processed is adhered to the protective layer of a composite sheet having the protective layer and a third sheet, and the object and the protective layer are diced, It is preferable to obtain a plurality of semiconductor devices and to peel the third sheet from the protective layer.

In the expand method according to an aspect of the present invention, the protective layer and the first sheet are laminated in advance, the object to be processed is supported by the protective layer, and the object and the protective layer are diced, so that the It is desirable to obtain a plurality of semiconductor devices.

In the expand method according to one aspect of the present invention, the object to be processed is preferably a semiconductor wafer.

In the expand method according to one aspect of the present invention, the first sheet is preferably an expand sheet.

In the expand method according to one aspect of the present invention, it is preferable that the first semiconductor device surface has a circuit.

According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device including the expand method according to the above-described aspect of the present invention.

According to one aspect of the present invention, it is possible to provide an expand method capable of suppressing glue retention while simplifying at least any of the tape configuration and process compared to the prior art. According to another aspect of the present invention, a method for manufacturing a semiconductor device including the expand method can be provided.

BRIEF DESCRIPTION OF THE DRAWINGS It is sectional drawing explaining the manufacturing method which concerns on 1st Embodiment.
It is sectional drawing explaining the manufacturing method which concerns on 1st Embodiment.
1C is a cross-sectional view for explaining the manufacturing method according to the first embodiment;
Fig. 2A is a cross-sectional view for explaining the manufacturing method according to the first embodiment;
Fig. 2B is a cross-sectional view for explaining the manufacturing method according to the first embodiment;
Fig. 3 is a cross-sectional view for explaining the manufacturing method according to the first embodiment;
Fig. 4A is a cross-sectional view for explaining the manufacturing method according to the first embodiment;
Fig. 4B is a cross-sectional view for explaining the manufacturing method according to the first embodiment;
Fig. 5A is a cross-sectional view for explaining the manufacturing method according to the first embodiment;
Fig. 5B is a cross-sectional view for explaining the manufacturing method according to the first embodiment;
6A is a cross-sectional view for explaining a manufacturing method according to a second embodiment;
Fig. 6B is a cross-sectional view for explaining a manufacturing method according to the second embodiment;
6C is a cross-sectional view for explaining a manufacturing method according to the second embodiment;
Fig. 7A is a cross-sectional view for explaining a manufacturing method according to a second embodiment;
Fig. 7B is a cross-sectional view for explaining the manufacturing method according to the second embodiment;
Fig. 7C is a cross-sectional view for explaining the manufacturing method according to the second embodiment;
Fig. 8A is a cross-sectional view for explaining a manufacturing method according to a third embodiment;
Fig. 8B is a cross-sectional view for explaining the manufacturing method according to the third embodiment;
Fig. 8C is a cross-sectional view for explaining the manufacturing method according to the third embodiment;
Fig. 9 is a cross-sectional view for explaining a manufacturing method according to a third embodiment;
Fig. 10 is a plan view for explaining a biaxial stretching and expanding device used in Examples.
11 is a schematic diagram for explaining a method for measuring chip alignment.

[First Embodiment]

Hereinafter, the expand method which concerns on this embodiment, and the manufacturing method of the semiconductor device containing the said expand method are demonstrated.

1 (FIG. 1A, FIG. 1B, and FIG. 1C), FIG. 2 (FIG. 2A and FIG. 2B), FIG. 3, FIG. 4 (FIG. 4A and FIG. 4B), and FIG. 5 (FIG. 5A and FIG. 5B) show the present embodiment It is a cross-sectional schematic diagram explaining the manufacturing method of the semiconductor device including the expand method related to this.

The expand method according to the present embodiment includes at least the following steps (P1) to (P2).

(P1) A step of preparing a plurality of semiconductor devices affixed to the first sheet. A plurality of semiconductor devices are pasted together with a protective layer between the first sheet and the semiconductor device.

(P2) A step of extending the first sheet to widen the distance between the plurality of semiconductor devices.

1A, 1B, 1C, 2A and 2B are diagrams for explaining the step (P1).

(Processing object)

1a shows a schematic cross-sectional view of a workpiece with a protective layer.

In this embodiment, the semiconductor wafer W as a process object is mentioned as an example and demonstrated. In the present invention, the object to be processed is not limited to the wafer.

The semiconductor wafer W has a circuit surface W1 as a first object surface and a back surface W3 as a second object surface to be processed. A circuit W2 is formed on the circuit surface W1. In this embodiment, the protective layer 100 is formed in the circuit surface W1.

The semiconductor wafer W may be a silicon wafer, for example, and compound semiconductor wafers, such as gallium arsenic, may be sufficient as it. As a method of forming the circuit W2 in the circuit surface W1 of the semiconductor wafer W, the method widely used is mentioned, For example, an etching method, a lift-off method, etc. are mentioned.

(protective layer)

The protective layer 100 is a layer covering the circuit surface W1 and the circuit W2. The protective layer 100 will not be specifically limited as long as it can protect the circuit surface W1 and the circuit W2. It is preferable that it is 1 micrometer or more, and, as for the thickness of the protective layer 100, it is more preferable that it is 5 micrometers or more. It is preferable that it is 500 micrometers or less, and, as for the thickness of the protective layer 100, it is more preferable that it is 300 micrometers or less.

As the protective layer 100, a protective film and a protective sheet are mentioned, for example.

As a protective film, it is preferable that it is a film|membrane obtained by forming into a film, for example, a resin material into a film on the circuit surface W1. One layer may be sufficient as the layer which comprises a protective film, and two or more layers may be sufficient as it. As a film-forming method, the printing method, the spray coating method, the spin coating method, and the immersion method are mentioned, for example.

As a protective sheet, the adhesive sheet which has an adhesive layer and a base material is mentioned, for example. As a base material in a protective sheet, if it functions suitably as one of the members which comprise a protective layer, and can support an adhesive layer, the structural material will not be specifically limited. It is preferable that the base material in a protective sheet is comprised from the film which mainly has a resin-type material. As a film mainly made of a resin-based material, for example, an ethylene-based copolymer film, a polyolefin-based film, a polyvinyl chloride-based film, a polyester-based film, a polyurethane film, a polyimide film, a polystyrene film, a polycarbonate film and A fluororesin film is mentioned.

As an adhesive layer in a protective sheet, if it functions suitably as one of the members which comprise a protective layer, and can closely_contact|adhere to a base material and circuit surface W1, the structural material will not be specifically limited. The pressure-sensitive adhesive layer in the protective sheet, for example, is preferably composed of at least one type of pressure-sensitive adhesive selected from the group consisting of an acrylic pressure-sensitive adhesive, a urethane pressure-sensitive adhesive, a polyester pressure-sensitive adhesive, a rubber pressure-sensitive adhesive, and a silicone pressure-sensitive adhesive, and is composed of an acrylic pressure-sensitive adhesive It is more preferable to be

Although the case where the protective layer 100 is a protective film which consists of one layer is mentioned as an example in description of this embodiment, this invention is not limited to this aspect.

[Backgrind process]

It is preferable that the semiconductor wafer W is a wafer obtained by passing through a backgrind process. The step (P1) of preparing the plurality of semiconductor devices stuck to the first sheet preferably includes this backgrinding step as the step (P1-1).

In a back-grinding process, the surface on the opposite side to the circuit surface W1 of the semiconductor wafer W is ground to predetermined thickness. It is preferable that the back surface W3 is a surface formed by grinding the back surface of the semiconductor wafer W. Let the surface exposed after grinding the semiconductor wafer W be the back surface W3.

It does not specifically limit as a method of grinding the semiconductor wafer W, For example, the well-known method using a grinder etc. is mentioned. When grinding the semiconductor wafer W, in order to protect the circuit W2, it is preferable to stick the adhesive sheet called a backgrind sheet to the circuit surface W1. In the backside grinding of the wafer, the circuit side W1 side of the semiconductor wafer W, ie, the backgrind sheet side, is fixed with a chuck table or the like, and the back side side on which the circuit is not formed is ground with a grinder. The process of sticking a backgrind sheet to the circuit surface W1 may be called the sticking process of a backgrind sheet.

The thickness of the semiconductor wafer W before grinding is not specifically limited, Usually, they are 500 micrometers or more and 1000 micrometers or less.

The thickness of the semiconductor wafer W after grinding is not specifically limited, Usually, they are 20 micrometers or more and 500 micrometers or less.

[Adhesive step of the second adhesive sheet]

1B, the semiconductor wafer W in which the 2nd adhesive sheet 20 was stuck to the back surface W3 is shown.

It is preferable that the semiconductor wafer W prepared in the process (P1) is a wafer obtained through the back-grinding process, and also through the sticking process of sticking the 2nd adhesive sheet 20 to the back surface W3. This sticking process may be called the sticking process of a 2nd adhesive sheet.

As will be described later, in the step P2, the semiconductor wafer W is divided into a plurality of semiconductor chips CP by dicing. When dicing the semiconductor wafer W, in order to hold the semiconductor wafer W, it is preferable to stick the adhesive sheet called a dicing sheet to the back surface W3. In this embodiment, it is preferable that the 2nd adhesive sheet 20 is a dicing sheet. When the 2nd adhesive sheet 20 is used as a dicing sheet, the semiconductor wafer W is affixed toward the 2nd adhesive layer 22 of the 2nd adhesive sheet 20 with the back surface W3. The circuit surface W1 of the semiconductor wafer W corresponds to the circuit surface W1 of the semiconductor chip CP. The back surface W3 of the semiconductor wafer W corresponds to the back surface W3 of the semiconductor chip CP.

[Dicing process]

1C is a view for explaining a dicing process of dicing a semiconductor wafer W as a processing object. 1C , a plurality of semiconductor chips CP held by the second pressure-sensitive adhesive sheet 20 are shown. In this embodiment, although the semiconductor chip CP is mentioned and demonstrated as an example of a semiconductor device, this invention is not limited to this aspect. As a semiconductor device, a wafer, a semiconductor device package, and a micro LED are mentioned, for example.

The plurality of semiconductor devices prepared in the step (P1) are preferably a plurality of semiconductor chips CP obtained by dicing the semiconductor wafer W in the dicing step. It is preferable that a process (P1) includes a dicing process of dicing the semiconductor wafer W supported by the 2nd adhesive sheet 20 as a process (P1-2).

The semiconductor wafer W in the state in which the protective layer 100 is formed in the circuit surface W1 and the 2nd adhesive sheet 20 was stuck to the back surface W3 is divided into pieces by dicing, and a plurality of semiconductor chips (CP) is formed. In this embodiment, a cut is made from the protective layer 100 side, the protective layer 100 is cut|disconnected, and the semiconductor wafer W is cut|disconnected further. The circuit surfaces W1 of the plurality of semiconductor chips CP after the dicing process are in a state covered with the cut protective layer 100, respectively.

Cutting means, such as a dicing saw, is used for dicing.

The cutting depth at the time of dicing will not be specifically limited if it is a depth which can separate the protective layer 100 and the semiconductor wafer W into pieces. From the viewpoint of reliably cutting the semiconductor wafer W, the cut in the dicing step is preferably formed in a depth from the protective layer 100 side to the second pressure-sensitive adhesive sheet 20, the second It is more preferable to form in the depth which reaches the 2nd adhesive layer 22 of the adhesive sheet 20. By dicing, the 2nd adhesive layer 22 is also cut|disconnected to the same size as the semiconductor chip CP. Moreover, a cut may be formed also in the 2nd base material 21 by dicing.

[Step of sticking the first sheet]

FIG. 2A is a view for explaining the step of sticking the first sheet 10 to the plurality of semiconductor chips CP after the dicing step. The state in which the 1st sheet|seat 10 was stuck to the some semiconductor chip CP obtained by the dicing process is shown by FIG. 2A. The 1st sheet 10 which concerns on this embodiment is an adhesive sheet which has the 1st adhesive layer 12 and the 1st base material 11. As shown in FIG. The details of the first sheet 10 will be described later. In addition, in this invention, a 1st sheet|seat is not limited to the adhesive sheet of 2 layer structure which has a 1st adhesive layer and a 1st base material.

In the present embodiment, when the first sheet 10 is adhered to the circuit surface W1 side of the plurality of semiconductor chips CP, the first adhesive layer of the plurality of semiconductor chips CP and the first sheet 10 ( 12) A laminated structure with a protective layer 100 interposed therebetween is obtained.

[Peeling process of 2nd adhesive sheet]

FIG. 2B is a diagram for explaining the step of peeling the second adhesive sheet 20 after the step of sticking the first sheet. This process may be called the peeling process of a 2nd adhesive sheet. In FIG. 2B, the state which peeled the 2nd adhesive sheet 20 from the back surface W3 of the semiconductor wafer W after sticking the 1st sheet|seat 10 is shown.

After sticking the 1st sheet|seat 10, when the 2nd adhesive sheet 20 is peeled, the back surface W3 of some semiconductor chip CP is exposed.

Moreover, when the energy-beam polymeric compound is mix|blended with the 2nd adhesive layer 22, an energy-beam is irradiated to the 2nd adhesive layer 22 from the 2nd base material 21 side, and an energy-beam polymeric compound is obtained. It is preferable to peel the 2nd adhesive sheet 20 after hardening.

[Expand process]

Fig. 3 is a diagram for explaining the step (P2). The step (P2) is sometimes referred to as an expand step. After peeling the 2nd adhesive sheet 20 in FIG. 3, the state which extended the 1st sheet 10 and widened the space|interval of the some semiconductor chip CP is shown.

When widening the space|interval of several semiconductor chip CP, it is preferable to extend an expand sheet in the state hold|maintained several semiconductor chips CP with the adhesive sheet called an expand sheet. In the present embodiment, it is preferable that the first sheet 10 is an expand sheet.

The method of extending the 1st sheet|seat 10 in the expand process is not specifically limited. As a method of stretching the first sheet 10, for example, a method of stretching the first sheet 10 by pressing against an annular or circular expander, and a method of stretching the first sheet 10 using a holding member or the like. and a method of holding and stretching the outer periphery. In this embodiment, since the space|interval D1 of several semiconductor chip CP depends on the size of the semiconductor chip CP, it is not restrict|limited in particular. In particular, it is preferable that the mutual space|interval D1 of the adjacent semiconductor chips CP in the some semiconductor chip CP stuck to the single side|surface of the adhesive sheet is 200 micrometers or more. In addition, the upper limit in particular of the mutual space|interval of the said semiconductor chip CP is not restrict|limited. The upper limit of the mutual space|interval of the said semiconductor chip CP may be 6000 micrometers, for example.

[First transfer process]

In the present embodiment, after the expand step, a step of transferring the plurality of semiconductor chips CP stuck on the first sheet 10 to another pressure sensitive adhesive sheet (eg, the fifth pressure sensitive adhesive sheet) (hereinafter referred to as " A first transfer step”) may be performed.

4A is a view for explaining a process (hereinafter, sometimes referred to as a "transfer process") of transferring a plurality of semiconductor chips CP stuck on the first sheet 10 to the fifth adhesive sheet 50 . This appears.

The 5th adhesive sheet 50 will not be specifically limited if several semiconductor chips CP can be hold|maintained. The 5th adhesive sheet 50 has the 5th base material 51 and the 5th adhesive layer 52. As shown in FIG.

When performing a transfer process in this embodiment, for example, after an expand process, the 5th adhesive sheet 50 is affixed to the back surface W3 of some semiconductor chip CP, After that, the 1st It is preferable to peel the sheet 10 .

The 5th adhesive sheet 50 may be stuck to the 2nd ring frame together with the some semiconductor chip CP. In this case, a ring frame is mounted on the 5th adhesive layer 52 of the 5th adhesive sheet 50, this is pressed lightly, and it is fixed. Thereafter, the fifth pressure-sensitive adhesive layer 52 exposed from the inside of the annular shape of the ring frame is pressed against the back surface W3 of the semiconductor chip CP, and the plurality of semiconductor chips CP are attached to the fifth pressure-sensitive adhesive sheet 50 . to fix

4B, the figure explaining the process of peeling the 1st sheet 10 after sticking of the 5th adhesive sheet 50 is shown.

In this embodiment, when peeling the 1st sheet 10, the divided 1st sheet 10 covering the circuit surface W1 of the semiconductor chip CP is collectively peeled together with the protective layer 100. The aspect will be described as an example. Moreover, the aspect which peels only the 1st sheet|seat 10 may be sufficient, leaving the separated protective layer 100 which covers the circuit surface W1 to the semiconductor chip CP.

After bonding the 5th adhesive sheet 50, when the 1st sheet 10 and the protective layer 100 are peeled, the circuit surface W1 of several semiconductor chip CP is exposed. Even after peeling off the 1st sheet 10 and the protective layer 100, it is preferable that the space|interval D1 between the some semiconductor chip CP expanded in the expand process is maintained.

[Second transfer process]

In FIG. 5A , a step (hereinafter, sometimes referred to as a “second transfer step”) of transferring a plurality of semiconductor chips CP stuck to the fifth pressure-sensitive adhesive sheet 50 to the sixth pressure-sensitive adhesive sheet 60 is shown. Explanatory drawings are shown.

As for the some semiconductor chip CP transferred from the 5th adhesive sheet 50 to the 6th adhesive sheet 60, it is preferable that the space|interval D1 between the semiconductor chips CP is maintained.

The 6th adhesive sheet 60 will not be specifically limited if several semiconductor chips CP can be hold|maintained. The 6th adhesive sheet 60 has the 6th base material 61 and the 6th adhesive layer 62. As shown in FIG.

When a plurality of semiconductor chips CP on the sixth pressure-sensitive adhesive sheet 60 are to be sealed, as the sixth pressure-sensitive adhesive sheet 60, it is preferable to use an adhesive sheet for a sealing step, and a heat-resistant pressure-sensitive adhesive sheet is used. It is more preferable to use In addition, when using the adhesive sheet which has heat resistance as the 6th adhesive sheet 60, the 6th base material 61 and the 6th adhesive layer 62 are heat-resistant which can withstand the temperature imposed in the sealing process, respectively, respectively. It is preferably formed of a material having

The plurality of semiconductor chips CP transferred from the fifth pressure-sensitive adhesive sheet 50 to the sixth pressure-sensitive adhesive sheet 60 are affixed with the circuit surface W1 facing the sixth pressure-sensitive adhesive layer 62 .

[Encapsulation process]

FIG. 5B is a diagram for explaining a process of sealing the plurality of semiconductor chips CP using the sealing member 300 (hereinafter referred to as a “sealing process” in some cases).

In this embodiment, a sealing process is performed, after some semiconductor chip CP is transcribe|transferred to the 6th adhesive sheet 60. As shown in FIG.

Sealing process WHEREIN: In the state in which the circuit surface W1 was protected by the 6th adhesive sheet 60, the sealing body 3 is formed by covering the some semiconductor chip CP with the sealing member 300. The sealing member 300 is also filled between the plurality of semiconductor chips CP. Since the circuit surface W1 and the circuit W2 are covered by the 6th adhesive sheet 60, it can prevent that the circuit surface W1 is covered with the sealing member 300.

The sealing body 3 in which the some semiconductor chip CP spaced apart by a predetermined distance was embedded in the sealing member 300 by a sealing process is obtained. In a sealing process, it is preferable that the some semiconductor chip CP is covered with the sealing member 300 in the state in which the space|interval D1 after implementing an expand process was maintained.

After a sealing process, the 6th adhesive sheet 60 is peeled. When the 6th adhesive sheet 60 is peeled, the circuit surface W1 of the semiconductor chip CP, and the surface 3A which was contacting the 6th adhesive sheet 60 of the sealing body 3 are exposed.

After the above-described expand process, the transfer process and the expand process are repeated an arbitrary number of times to make the distance between the semiconductor chips CP a desired distance, and the direction of the circuit surface when the semiconductor chips CP are sealed. You can do it any way you want.

[Other processes]

After peeling the adhesive sheet 30 from the sealing body 3, with respect to this sealing body 3, the redistribution layer formation process of forming the redistribution layer electrically connected with the semiconductor chip CP, The redistribution layer and the outside A connection process for electrically connecting the terminal electrodes is performed one after another. The circuit of the semiconductor chip CP and the external terminal electrode are electrically connected by the redistribution layer forming step and the connection step with the external terminal electrode.

The sealing body 3 to which the external terminal electrode is connected is divided into pieces in units of the semiconductor chip CP. The method of making the sealing body 3 into pieces is not specifically limited. By separating the sealing body 3 into pieces, the semiconductor package of the semiconductor chip CP unit is manufactured. The semiconductor package to which the fan-out external electrode was connected other than the area|region of the semiconductor chip CP is manufactured as a fan-out type wafer level package (FO-WLP).

(1st sheet)

The 1st sheet 10 which concerns on this embodiment has the 1st base material 11 and the 1st adhesive layer 12. As shown in FIG. The first pressure-sensitive adhesive layer 12 is laminated on the first base material 11 .

・First base material

The constituent material of the 1st base material 11 is not specifically limited, as long as it can function suitably in desired processes (for example, process (P2)), such as an expand process.

The first substrate 11 has a first substrate surface and a first substrate back surface. The 1st base material back surface is the surface on the opposite side to the 1st base material surface.

In the 1st sheet 10, it is preferable that the 1st adhesive layer 12 is formed on one surface of the 1st base material surface and the 1st base material back surface, and the adhesive layer is not formed on the other surface. desirable.

The material of the first base material 11 is preferably a thermoplastic elastomer or a rubber-based material, more preferably a thermoplastic elastomer, from the viewpoint of being easily stretched.

Moreover, as a material of the 1st base material 11, it is preferable to use resin with comparatively low glass transition temperature (Tg) from a viewpoint of being easy to extend largely. It is preferable that it is 90 degrees C or less, and, as for the glass transition temperature (Tg) of such resin, it is more preferable that it is 80 degrees C or less, It is still more preferable that it is 70 degrees C or less.

Examples of the thermoplastic elastomer include a urethane elastomer, an olefin elastomer, a vinyl chloride elastomer, a polyester elastomer, a styrene elastomer, an acrylic elastomer, and an amide elastomer. A thermoplastic elastomer can be used individually by 1 type or in combination of 2 or more type. As a thermoplastic elastomer, it is preferable to use a urethane-type elastomer from a viewpoint of being easy to extend largely.

The urethane-based elastomer is generally obtained by reacting a long-chain polyol, a chain extender, and a diisocyanate. A urethane-type elastomer consists of a soft segment which has a structural unit derived from a long-chain polyol, and a hard segment which has a polyurethane structure obtained from reaction of a chain extender and diisocyanate.

When the urethane-based elastomer is classified according to the type of the long-chain polyol, it is divided into a polyester-based polyurethane elastomer, a polyether-based polyurethane elastomer, and a polycarbonate-based polyurethane elastomer. A urethane-type elastomer can be used individually by 1 type or in combination of 2 or more type. In this embodiment, it is preferable that a urethane-type elastomer is a polyether-type polyurethane elastomer from a viewpoint of being easy to extend largely.

Examples of the long-chain polyol include polyester polyols such as lactone-based polyester polyols and adipate-based polyester polyols; polyether polyols such as polypropylene (ethylene) polyol and polytetramethylene ether glycol; Polycarbonate polyol etc. are mentioned. In this embodiment, it is preferable that the long-chain polyol is an adipate-type polyester polyol from a viewpoint of being easy to extend largely.

Examples of diisocyanate include 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 4,4'-diphenylmethane diisocyanate, and hexamethylene diisocyanate. In this embodiment, it is preferable that diisocyanate is hexamethylene diisocyanate from a viewpoint of being easy to extend largely.

Examples of the chain extender include low molecular weight polyhydric alcohols (eg, 1,4-butanediol and 1,6-hexanediol), and aromatic diamines. Among these, it is preferable to use 1, 6-hexanediol from a viewpoint of being easy to extend largely.

Examples of the olefin elastomer include an ethylene/α-olefin copolymer, a propylene/α-olefin copolymer, a butene/α-olefin copolymer, an ethylene/propylene/α-olefin copolymer, an ethylene/butene/α-olefin copolymer, A propylene/butene-α olefin copolymer, an ethylene/propylene/butene-α/olefin copolymer, a styrene/isoprene copolymer, and a styrene/ethylene/butylene copolymer comprising at least one resin selected from the group consisting of elastomers. An olefin-type elastomer can be used individually by 1 type or in combination of 2 or more type.

The density of the olefin-based elastomer is not particularly limited. For example, the density of the olefin-based elastomer is preferably 0.860 g/cm 3 or more and less than 0.905 g/cm 3 , more preferably 0.862 g/cm 3 or more and less than 0.900 g/cm 3 , 0.864 g/cm 3 or more and 0.895 g It is especially preferable that it is less than /cm<3>. When the density of the olefin-based elastomer satisfies the above range, the substrate is excellent in the uneven followability when affixing a semiconductor device as an adherend to the pressure-sensitive adhesive sheet.

The olefin-based elastomer preferably has a mass ratio of monomers made of an olefin-based compound among all monomers used to form the elastomer (also referred to as “olefin content” in this specification) is 50 mass% or more and 100 mass% or less. do.

When the olefin content is excessively low, the properties as an elastomer containing structural units derived from olefins become difficult to appear, and the substrate hardly exhibits flexibility and rubber elasticity.

It is preferable that it is 50 mass % or more, and, as for the olefin content rate, it is more preferable that it is 60 mass % or more from a viewpoint of obtaining softness and rubber elasticity stably.

Examples of the styrene-based elastomer include a styrene-conjugated diene copolymer and a styrene-olefin copolymer. Specific examples of the styrene-conjugated diene copolymer include styrene-butadiene copolymer, styrene-butadiene-styrene copolymer (SBS), styrene-butadiene-butylene-styrene copolymer, styrene-isoprene copolymer, styrene-isoprene- Styrene copolymer (SIS), unhydrogenated styrene-conjugated diene copolymer such as styrene-ethylene-isoprene-styrene copolymer, styrene-ethylene/propylene-styrene copolymer (SEPS, hydrogenated product of styrene-isoprene-styrene copolymer) ) and hydrogenated styrene-conjugated diene copolymers such as styrene-ethylene-butylene-styrene copolymer (SEBS, hydrogenated product of styrene-butadiene copolymer). Industrially, as styrene-based elastomers, Tuffrene (manufactured by Asahi Chemical Co., Ltd.), Creighton (manufactured by Kraton Polymer Japan Co., Ltd.), Sumitomo TPE-SB (manufactured by Sumitomo Chemical Co., Ltd.), EpoFriend (Daisel Co., Ltd.) trade names such as Lavalon (manufactured by Mitsubishi Chemical Co., Ltd.), Septon (manufactured by Kuraray Co., Ltd.), and Toughtech (manufactured by Asahi Chemical Co., Ltd.). A hydrogenated substance may be sufficient as a styrene-type elastomer, and a non-hydrogenated substance may be sufficient as it.

Examples of the rubber-based material include natural rubber, synthetic isoprene rubber (IR), butadiene rubber (BR), styrene-butadiene rubber (SBR), chloroprene rubber (CR), acrylonitrile-butadiene copolymer rubber (NBR), butyl rubber (IIR), halogenated butyl rubber, acrylic rubber, urethane rubber, polysulfide rubber, and the like. A rubber-based material can be used individually by these 1 type or in combination of 2 or more type.

The first base material 11 may be a laminated film in which a plurality of films made of the above materials (eg, thermoplastic elastomer or rubber-based material) are laminated. Moreover, the 1st base material 11 may be a laminated|multilayer film in which the film which consists of the above materials (for example, a thermoplastic elastomer or a rubber-type material) and another film were laminated|stacked.

The 1st base material 11 may contain the additive in the film which has the said resin type material as a main material. As a specific example of an additive, it is the same as that of the additive mentioned in description of the 1st base material 11. As an additive, a pigment, dye, a flame retardant, a plasticizer, an antistatic agent, a lubricant, a filler, etc. are mentioned, for example. As a pigment, titanium dioxide, carbon black, etc. are mentioned, for example. Moreover, as a filler, organic type materials like a melamine resin, inorganic type materials like fumed silica, and metallic materials like nickel particles are illustrated. Although content of the additive which may be contained in a film is not specifically limited, It is preferable to limit to the range in which the 1st base material 11 can exhibit a desired function.

As for the 1st base material 11, the process for improving adhesiveness with the 1st adhesive layer 12 laminated|stacked on the surface of the 1st base material 11 on the single side|surface or both surfaces of the 1st base material 11 may be given. .

When the 1st adhesive layer 12 contains an energy-beam curable adhesive, it is preferable that the 1st base material 11 has the permeability|transmittance with respect to an energy-beam. When using an ultraviolet-ray as an energy beam, it is preferable that the 1st base material 11 has transparency with respect to an ultraviolet-ray. When using an electron beam as an energy beam, it is preferable that the 1st base material 11 has the permeability|transmittance of an electron beam.

The thickness of the 1st base material 11 is not limited as long as the 1st sheet|seat 10 can function suitably in a desired process. It is preferable that it is 20 micrometers or more, and, as for the thickness of the 1st base material 11, it is more preferable that it is 40 micrometers or more. Moreover, it is preferable that it is 250 micrometers or less, and, as for the thickness of the 1st base material 11, it is more preferable that it is 200 micrometers or less.

In addition, the standard deviation of the thickness of the first substrate 11 when the thickness of a plurality of points is measured at intervals of 2 cm in the in-plane direction of the first substrate surface or the back surface of the first substrate 11 of the first substrate 11, It is preferable that it is 2 micrometers or less, It is more preferable that it is 1.5 micrometers or less, It is more preferable that it is 1 micrometer or less. When the standard deviation is 2 µm or less, the first sheet 10 has a thickness with high precision, and it becomes possible to uniformly stretch the first sheet 10 .

The tensile modulus of elasticity in the MD direction and the CD direction of the first substrate 11 at 23°C are 10 MPa or more and 350 MPa or less, respectively, and 100% of the MD direction and the CD direction of the first substrate 11 at 23°C It is preferable that the stresses are 3 MPa or more and 20 MPa or less, respectively.

When the tensile modulus and the 100% stress are within the above ranges, it becomes possible to greatly extend the first sheet 10 .

The 100% stress of the first base material 11 is a value obtained as follows. A test piece having a size of 150 mm (longitudinal direction) x 15 mm (width direction) is cut out from the base material 11 . Both ends of the cut specimen in the longitudinal direction are held with a holding tool so that the length between the holding tools is 100 mm. After holding the test piece with a gripping tool, it is pulled in the longitudinal direction at a speed of 200 mm/min, and the measured value of the tensile force when the length between the gripping tools becomes 200 mm is read. The 100% stress of the first substrate 11 is a value obtained by dividing the read measured value of the tensile force by the cross-sectional area of the substrate. The cross-sectional area of the 1st base material 11 is computed by the width direction length 15 mm x the thickness of the 1st base material 11 (test piece). The cutting is performed so that the flow direction (MD direction) or the direction orthogonal to the MD direction (CD direction) at the time of manufacture of a base material may correspond with the longitudinal direction of a test piece. In addition, in this tensile test, the thickness in particular of a test piece is not restrict|limited, It may be the same as the thickness of the base material used as a test object.

It is preferable that the breaking elongation of the MD direction and CD direction of the 1st base material 11 in 23 degreeC are 100 % or more, respectively.

When the elongation at break of the first substrate 11 in the MD direction and the CD direction is 100% or more, respectively, it becomes possible to extend the first sheet 10 largely without causing breakage.

The tensile modulus (MPa) of the substrate and the elongation at break (%) of the substrate can be measured as follows. The base material is cut to 15 mm x 140 mm, and a test piece is obtained. About the said test piece, based on JISK7161:2014 and JISK7127:1999, the elongation at break in 23 degreeC and the tensile modulus of elasticity are measured. Specifically, the test piece is subjected to a tensile test at a speed of 200 mm/min after setting the distance between chucks to 100 mm with a tensile tester (manufactured by Shimadzu Corporation, product name "Autograph AG-IS 500N"), The elongation at break (%) and the tensile modulus (MPa) are measured. In addition, the measurement is performed in both the flow direction (MD) of the manufacturing time of a base material, and the direction (CD) perpendicular to this.

・First adhesive layer

The constituent material of the 1st adhesive layer 12 is not specifically limited as long as it can function suitably in desired processes, such as an expand process. Examples of the pressure-sensitive adhesive contained in the first pressure-sensitive adhesive layer 12 include a rubber pressure-sensitive adhesive, an acrylic pressure-sensitive adhesive, a silicone pressure-sensitive adhesive, a polyester pressure-sensitive adhesive, and a urethane pressure-sensitive adhesive.

・Energy-ray-curable resin (aｘ1)

It is preferable that the 1st adhesive layer 12 contains energy-beam curable resin (a x 1). Energy ray-curable resin (a1) has an energy ray-curable double bond in a molecule|numerator.

The adhesive layer containing energy-beam curable resin hardens|cures by energy-beam irradiation, and adhesive force falls. When the adherend and the pressure-sensitive adhesive sheet are to be separated, the pressure-sensitive adhesive layer is irradiated with energy rays to facilitate separation.

It is preferable that energy-beam curable resin (a1) is a (meth)acrylic-type resin.

It is preferable that it is an ultraviolet-curable resin, and, as for energy-beam curable resin (a1), it is more preferable that it is an ultraviolet-curable (meth)acrylic-type resin.

Energy-beam curable resin (a1) is resin which polymerization-hardens when irradiated with an energy-beam. As an energy beam, an ultraviolet-ray, an electron beam, etc. are mentioned, for example.

Examples of the energy ray-curable resin (a1) include low molecular weight compounds having an energy ray polymerizable group (monofunctional monomers, polyfunctional monomers, monofunctional oligomers, and polyfunctional oligomers). Energy-beam curable resin (aｘ1), specifically, trimethylol propane triacrylate, tetramethylol methane tetraacrylate, pentaerythritol triacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol acrylates such as hexaacrylate, 1,4-butylene glycol diacrylate, and 1,6-hexanediol diacrylate, dicyclopentadiene dimethoxydiacrylate, and cyclic aliphatic such as isobornyl acrylate Acrylate compounds such as skeleton-containing acrylates, polyethylene glycol diacrylates, oligoester acrylates, urethane acrylate oligomers, epoxy-modified acrylates, polyether acrylates, and itaconic acid oligomers are used. Energy ray-curable resin (a1) is used individually by 1 type or in combination of 2 or more type.

The molecular weight of energy-beam curable resin (a1) is 100 or more and 30000 or less normally, and it is preferable that they are 300 or more and about 10000 or less.

· (meth)acrylic copolymer (b1)

It is preferable that the 1st adhesive layer 12 further contains the (meth)acrylic-type copolymer (b1). The (meth)acrylic copolymer is different from the above-mentioned energy ray-curable resin (a1).

It is preferable that the (meth)acrylic-type copolymer (b1) has a carbon-carbon double bond of energy-beam sclerosis|hardenability. That is, in this embodiment, it is preferable that the 1st adhesive layer 12 contains energy-beam curable resin (a x 1) and an energy-beam curable (meth)acrylic-type copolymer (b1).

The first pressure-sensitive adhesive layer (1) preferably contains 10 parts by mass or more of the energy ray-curable resin (a1) with respect to 100 parts by mass of the (meth)acrylic copolymer (b1), and 20 parts by mass or more. It is more preferable to contain, and it is still more preferable to contain in the ratio of 25 mass parts or more.

The first pressure-sensitive adhesive layer (1) preferably contains the energy ray-curable resin (a1) in a ratio of 80 parts by mass or less, and 70 parts by mass or less with respect to 100 parts by mass of the (meth)acrylic copolymer (b1). It is more preferable to contain in a ratio, and it is still more preferable to contain in the ratio of 60 mass parts or less.

It is preferable that the weight average molecular weight (Mw) of (meth)acrylic-type copolymer (b1) is 10,000 or more, It is more preferable that it is 150,000 or more, It is still more preferable that it is 200,000 or more.

Moreover, it is preferable that it is 1.5 million or less, and, as for the weight average molecular weight (Mw) of a (meth)acrylic-type copolymer (b1), it is more preferable that it is 1 million or less.

In addition, the weight average molecular weight (Mw) in this specification is the value of standard polystyrene conversion measured by the gel permeation chromatography method (GPC method).

The (meth)acrylic copolymer (b1) is a (meth)acrylic acid ester polymer (b2) in which a functional group having energy ray curability (energy ray curable group) is introduced into a side chain (hereinafter referred to as "energy ray curable polymer (b2)" In some cases, it is preferable that

・Energy-ray-curable polymer (b2)

The energy ray-curable polymer (b2) is preferably a copolymer obtained by reacting an acrylic copolymer (b21) having a functional group-containing monomer unit with an unsaturated group-containing compound (b22) having a functional group bonded to the functional group.

In this specification, (meth)acrylic acid ester means both an acrylic acid ester and a methacrylic acid ester. Other similar terms are the same.

The acrylic copolymer (b21) preferably contains a structural unit derived from a functional group-containing monomer and a structural unit derived from a (meth)acrylic acid ester monomer or a derivative of a (meth)acrylic acid ester monomer.

The functional group-containing monomer as a structural unit of the acrylic copolymer (b21) is preferably a monomer having a polymerizable double bond and a functional group in the molecule. It is preferable that the functional group is at least any functional group selected from the group which consists of a hydroxyl group, a carboxy group, an amino group, a substituted amino group, an epoxy group, etc.

As a hydroxyl-group containing monomer, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, 3-hydroxybutyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, etc. are mentioned. A hydroxyl group containing monomer is used individually by 1 type or in combination of 2 or more type.

Examples of the carboxyl group-containing monomer include ethylenically unsaturated carboxylic acids such as acrylic acid, methacrylic acid, crotonic acid, maleic acid, itaconic acid, and citraconic acid. A carboxyl group containing monomer is used individually by 1 type or in combination of 2 or more type.

Examples of the amino group-containing monomer or substituted amino group-containing monomer include aminoethyl (meth)acrylate and n-butylaminoethyl (meth)acrylate. An amino group-containing monomer or a substituted amino group-containing monomer is used individually by 1 type or in combination of 2 or more type.

As the (meth)acrylic acid ester monomer constituting the acrylic copolymer (b21), in addition to alkyl (meth)acrylate having an alkyl group having 1 to 20 carbon atoms, for example, a monomer having an alicyclic structure in the molecule (alicyclic structure) containing monomer) is preferably used.

As an alkyl (meth)acrylate, the C1-C18 alkyl (meth)acrylate of an alkyl group is preferable. Alkyl (meth) acrylates include, for example, methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, n-butyl (meth) acrylate, and 2-ethylhexyl (meth) An acrylate etc. are more preferable. Alkyl (meth)acrylate is used individually by 1 type or in combination of 2 or more type.

Examples of the alicyclic structure-containing monomer include (meth)acrylic acid cyclohexyl, (meth)acrylic acid dicyclopentanyl, (meth)acrylic acid adamantyl, (meth)acrylic acid isobornyl, (meth)acrylic acid dicyclophene. Tenyl and dicyclopentenyloxyethyl (meth)acrylate are preferably used. An alicyclic structure containing monomer is used individually by 1 type or in combination of 2 or more type.

The acrylic copolymer (b21) preferably contains the structural unit derived from the functional group-containing monomer in a proportion of 1 mass% or more, more preferably 5 mass% or more, and 10 mass% or more. It is more preferable to contain.

Further, the acrylic copolymer (b21) preferably contains the structural unit derived from the functional group-containing monomer in a proportion of 35 mass% or less, more preferably 30 mass% or less, and 25 mass% or less. % or less is more preferable.

Further, the acrylic copolymer (b21) preferably contains a structural unit derived from a (meth)acrylic acid ester monomer or a derivative thereof in a proportion of 50 mass% or more, more preferably 60 mass% or more, , it is more preferably contained in a proportion of 70 mass% or more.

In addition, the acrylic copolymer (b21) preferably contains a structural unit derived from a (meth)acrylic acid ester monomer or a derivative thereof in a proportion of 99 mass% or less, and more preferably in a proportion of 95 mass% or less. It is preferable, and it is more preferable to contain it in the ratio of 90 mass % or less.

The acrylic copolymer (b21) is obtained by copolymerizing a functional group-containing monomer as described above and a (meth)acrylic acid ester monomer or a derivative thereof by a conventional method.

The acrylic copolymer (b21) may contain at least any structural unit selected from the group consisting of dimethylacrylamide, vinyl formate, vinyl acetate, styrene, etc. in addition to the above-mentioned monomers.

An energy ray-curable polymer (b2) is obtained by reacting the acrylic copolymer (b21) having the functional group-containing monomer unit with an unsaturated group-containing compound (b22) having a functional group bonding to the functional group.

The functional group of the unsaturated group-containing compound (b22) can be appropriately selected according to the type of the functional group of the functional group-containing monomer unit of the acrylic copolymer (b21). For example, when the functional group of the acrylic copolymer (b21) is a hydroxyl group, an amino group or a substituted amino group, the functional group of the unsaturated group-containing compound (b22) is preferably an isocyanate group or an epoxy group, and the acrylic copolymer (b21) ), when the functional group is an epoxy group, the functional group of the unsaturated group-containing compound (b22) is preferably an amino group, a carboxy group or an aziridinyl group.

The unsaturated group-containing compound (b22) contains at least one energy-beam polymerizable carbon-carbon double bond in one molecule, and preferably contains 1 or more and 6 or less, and contains 1 or more and 4 or less. It is more preferable to

As the unsaturated group-containing compound (b22), for example, 2-methacryloyloxyethyl isocyanate (2-isocyanatoethyl methacrylate), meta-isopropenyl-α,α-dimethylbenzyl isocyanate, methacryl Royl isocyanate, allyl isocyanate, 1, 1- (bis acryloyloxymethyl) ethyl isocyanate; Acryloyl monoisocyanate compound obtained by reaction of a diisocyanate compound or a polyisocyanate compound, and hydroxyethyl (meth)acrylate; Acryloyl monoisocyanate compound obtained by reaction of a diisocyanate compound or a polyisocyanate compound, a polyol compound, and hydroxyethyl (meth)acrylate; glycidyl (meth)acrylate; (meth)acrylic acid, 2-(1-aziridinyl)ethyl (meth)acrylate, 2-vinyl-2-oxazoline, 2-isopropenyl-2-oxazoline, etc. are mentioned.

The unsaturated group-containing compound (b22) is preferably used in a ratio (addition ratio) of 50 mol% or more, more preferably 60 mol% or more, with respect to the number of moles of the functional group-containing monomer in the acrylic copolymer (b21). and it is more preferably used in a ratio of 70 mol% or more.

Further, the unsaturated group-containing compound (b22) is preferably used in a ratio of 95 mol% or less, more preferably 93 mol% or less, with respect to the number of moles of the functional group-containing monomer of the acrylic copolymer (b21). and it is more preferably used in a ratio of 90 mol% or less.

In the reaction of the acrylic copolymer (b21) and the unsaturated group-containing compound (b22), depending on the combination of the functional group of the acrylic copolymer (b21) and the functional group of the unsaturated group-containing compound (b22), the reaction temperature, pressure, The solvent, time, the presence or absence of a catalyst, and the kind of catalyst can be appropriately selected. Thereby, the functional group which the acrylic copolymer (b21) has and the functional group which the unsaturated group-containing compound (b22) has reacts, the unsaturated group is introduce|transduced into the side chain of the acrylic copolymer (b21), and an energy-beam curable polymer (b2) is is obtained

It is preferable that the weight average molecular weight (Mw) of an energy ray-curable polymer (b2) is 10,000 or more, It is more preferable that it is 150,000 or more, It is more preferable that it is 200,000 or more.

Moreover, it is preferable that it is 1.5 million or less, and, as for the weight average molecular weight (Mw) of an energy-beam curable polymer (b2), it is more preferable that it is 1 million or less.

・Photoinitiator (C)

When the 1st adhesive layer 12 contains an ultraviolet curable compound (for example, ultraviolet curable resin), it is preferable that the 1st adhesive layer 12 contains a photoinitiator (C).

When the 1st adhesive layer 12 contains a photoinitiator (C), polymerization hardening time and light irradiation amount can be decreased.

As a specific example of a photoinitiator (C), a benzoin compound, an acetophenone compound, an acyl phosphinoxide compound, a titanocene compound, a thioxanthone compound, and a peroxide compound are mentioned, for example. Moreover, as a photoinitiator (C), photosensitizers, such as an amine or a quinone, etc. are mentioned, for example.

As a more specific photoinitiator (C), For example, 1-hydroxycyclohexylphenyl ketone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, benzoin, benzoin methyl ether, benzo Inethyl ether, benzoin isopropyl ether, benzylphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutylolnitrile, dibenzyl, diacetyl, 8-chloranthraquinone, bis(2,4,6- trimethylbenzoyl)phenylphosphine oxide etc. are mentioned. A photoinitiator (C) may be used individually by 1 type, and may use 2 or more types together.

The compounding amount of the photoinitiator (C) is preferably 0.01 parts by mass or more and 10 parts by mass or less, more preferably 0.03 parts by mass or more and 5 parts by mass or less, 0.05 parts by mass or more and 5 parts by mass with respect to 100 parts by mass of the adhesive resin. It is more preferable that it is less than part.

A photoinitiator (C), when mix|blending an energy-beam curable resin (a1) and a (meth)acrylic-type copolymer (b1) with an adhesive layer, an energy-beam curable resin (a1), and a (meth)acrylic-type copolymer ( It is preferable to use in an amount of 0.1 mass part or more with respect to 100 mass parts of total amounts of b1), and it is more preferable to use in the amount of 0.5 mass part or more.

Moreover, when a photoinitiator (C) mix|blends energy-beam curable resin (a1) and (meth)acrylic-type copolymer (b1) with an adhesive layer, energy-beam curable resin (a1), and (meth)acrylic-type copolymer It is preferable to use in an amount of 10 mass parts or less with respect to 100 mass parts of total amounts of coalescence (b1), and it is more preferable to use in the amount of 6 mass parts or less.

The 1st adhesive layer 12 may mix|blend other components suitably other than the said component. As another component, a crosslinking agent (E) etc. are mentioned, for example.

・Crosslinking agent (E)

As a crosslinking agent (E), the polyfunctional compound which has reactivity with the functional group which (meth)acrylic-type copolymer (b1) etc. has can be used. Examples of the polyfunctional compound in the first sheet 10 include an isocyanate compound, an epoxy compound, an amine compound, a melamine compound, an aziridine compound, a hydrazine compound, an aldehyde compound, an oxazoline compound, a metal alkoxide compound, and a metal chelate compound. , metal salts, ammonium salts, and reactive phenol resins.

The blending amount of the crosslinking agent (E) is preferably 0.01 parts by mass or more, more preferably 0.03 parts by mass or more, and still more preferably 0.04 parts by mass or more with respect to 100 parts by mass of the (meth)acrylic copolymer (b1).

Further, the blending amount of the crosslinking agent (E) is preferably 8 parts by mass or less, more preferably 5 parts by mass or less, and still more preferably 3.5 parts by mass or less with respect to 100 parts by mass of the (meth)acrylic copolymer (b1). .

The thickness of the 1st adhesive layer 12 is not specifically limited. It is preferable that it is 10 micrometers or more, for example, and, as for the thickness of the 1st adhesive layer 12, it is more preferable that it is 20 micrometers or more. Moreover, it is preferable that it is 150 micrometers or less, and, as for the thickness of the 1st adhesive layer 12, it is more preferable that it is 100 micrometers or less.

The recovery rate of the first sheet 10 is preferably 70% or more, more preferably 80% or more, and still more preferably 85% or more. The recovery rate of the first sheet 10 is preferably 100% or less. When a recovery rate is the said range, an adhesive sheet can be extended largely.

As for the recovery rate, in a test piece cut out of the adhesive sheet to 150 mm (longitudinal direction) x 15 mm (width direction), both ends in the longitudinal direction were held with a holding tool so that the length between the holding tools was 100 mm, and then, Pull at a rate of 200 mm/min until the length between the tools is 200 mm, hold for 1 minute with the length between the gripping tools extended to 200 mm, and then, when the length between the gripping tools is 100 mm return in the longitudinal direction at a rate of 200 mm/min until When the measured value of the tensile force is 0.1 N/15 mm, the length between the gripping tools is measured, and the length obtained by subtracting 100 mm of the length between the initial gripping tools from the length is L2 (mm), When the length obtained by subtracting the length of 100 mm between the holding tools in the initial stage from the length between the holding tools in the state of 200 mm is L1 (mm), it is calculated by the following formula (Equation 2).

Restoration rate (%) = {1 - (L2 ÷ L1)} × 100 ... (Equation 2)

When the recovery rate is within the above range, it means that the pressure-sensitive adhesive sheet can be easily restored even after being largely stretched. In general, when a sheet having a yield point is stretched beyond the yield point, the sheet undergoes plastic deformation, and the plastically deformed portion, that is, the extremely stretched portion, is in a state where it is localized. If the sheet in such a state is further stretched, the expand becomes non-uniform even if fracture occurs or does not occur at the extremely stretched portion. In the stress-strain diagram in which strain is plotted on the x-axis and elongation on the y-axis, respectively, the slope dx/dy does not take the stress value that changes from a positive value to 0 or a negative value Even for a sheet that does not exhibit a clear yield point, the sheet undergoes plastic deformation as the tensile amount increases, resulting in similar breakage or non-uniform expansion. On the other hand, when elastic deformation rather than plastic deformation occurs, the sheet is easily restored to its original shape by removing the stress. Therefore, the recovery rate, which is an index indicating how much recovery after 100% elongation, which is a sufficiently large tensile amount, is within the above range, plastic deformation of the film is minimized when the pressure-sensitive adhesive sheet is largely stretched, and fracture is unlikely to occur, In addition, uniform expansion becomes possible.

(Releasable sheet)

A release sheet may be affixed on the surface of the first sheet 10 . The release sheet is affixed on the surface of the 1st adhesive layer 12 of the 1st sheet 10 specifically,. The release sheet protects the 1st adhesive layer 12 at the time of transportation and storage by being stuck on the surface of the 1st adhesive layer 12. The release sheet is affixed to the first sheet 10 so as to be peelable, and is peeled off and removed from the first sheet 10 before the first sheet 10 is used.

As for the release sheet, a release sheet in which at least one surface was subjected to a release treatment is used. Specifically, the release sheet provided with the base material for release sheets, and the release agent layer which apply|coated and formed the release agent on the surface of this base material is mentioned, for example.

As a base material for release sheets, a resin film is preferable. Examples of the resin constituting the resin film as the base material for release sheets include polyester resin films such as polyethylene terephthalate resin, polybutylene terephthalate resin and polyethylene naphthalate resin, and polyolefin resin such as polypropylene resin and polyethylene resin. and the like.

Examples of the release agent include rubber-based elastomers such as silicone-based resins, olefin-based resins, isoprene-based resins and butadiene-based resins, long-chain alkyl-based resins, alkyd-based resins, and fluorine-based resins.

Although there is no restriction|limiting in particular as for the thickness of a release sheet, It is preferable that they are 10 micrometers or more and 200 micrometers or less, and it is more preferable that they are 20 micrometers or more and 150 micrometers or less.

(Method for Producing Adhesive Sheet)

There is no restriction|limiting in particular as a manufacturing method of the 1st sheet|seat 10 and the other adhesive sheet described in this specification, It can manufacture by a well-known method.

For example, the adhesive layer formed on the peeling sheet can be bonded together on the single side|surface of a base material, and the adhesive tape by which the peeling sheet was affixed on the surface of an adhesive layer can be manufactured. Moreover, the laminated body of a buffer layer and a base material is obtained by bonding together the buffer layer formed on the release sheet, and a base material, and removing the release sheet. And the adhesive layer formed on the peeling sheet can be bonded together to the base material side of a laminated body, and the adhesive tape by which the peeling sheet was affixed on the surface of an adhesive layer can be manufactured. Moreover, when a buffer layer is formed on both surfaces of a base material, an adhesive layer is formed on a buffer layer. What is necessary is just to peel and remove the peeling sheet affixed on the surface of an adhesive layer suitably before use of an adhesive tape.

As a more specific example of the manufacturing method of an adhesive sheet, the following method is mentioned. First, the adhesive composition which comprises an adhesive layer, and the coating liquid which further contains a solvent or a dispersion medium as needed are prepared. Next, the coating liquid is applied on one surface of the substrate by means of a coating means to form a coating film. As a coating means, a die coater, a curtain coater, a spray coater, a slit coater, a knife coater, etc. are mentioned, for example. Next, an adhesive layer can be formed by drying the said coating film. The properties of the coating liquid are not particularly limited as long as it can be applied. The coating liquid may contain the component for forming an adhesive layer as a solute, and may contain the component for forming an adhesive layer as a dispersoid. Similarly, on the single side|surface or a buffer layer of a base material, you may apply|coat an adhesive composition directly, and you may form an adhesive layer.

Moreover, as another more specific example of the manufacturing method of an adhesive sheet, the following method is mentioned. First, a coating solution is applied on the release surface of the release sheet described above to form a coating film. Next, the coating film is dried to form a laminate comprising an adhesive layer and a release sheet. Next, a base material may be affixed on the surface on the opposite side to the surface on the side of the peeling sheet in the adhesive layer of this laminated body, and the laminated body of an adhesive sheet and a peeling sheet may be obtained. The release sheet in this laminate may be peeled off as a process material, and the adhesive layer may be protected until a to-be-adhered body (for example, a semiconductor chip, a semiconductor wafer, etc.) is affixed to an adhesive layer.

When the coating solution contains a crosslinking agent, the (meth)acrylic copolymer in the coating film and the crosslinking agent are crosslinked by changing the drying conditions (eg, temperature and time, etc.) of the coating film or by separately performing heat treatment. What is necessary is just to make progress and to form a crosslinked structure with a desired density|existence density in an adhesive layer. In order to sufficiently advance this crosslinking reaction, after laminating the pressure-sensitive adhesive layer on the substrate by the above-described method or the like, the obtained pressure-sensitive adhesive sheet is cured in an environment of, for example, 23° C. and 50% relative humidity for several days. also be

It is preferable that it is 30 micrometers or more, and, as for the thickness of the 1st sheet 10, it is more preferable that it is 50 micrometers or more. Moreover, it is preferable that it is 400 micrometers or less, and, as for the thickness of the 1st sheet|seat 10, it is more preferable that it is 300 micrometers or less.

(Second adhesive sheet)

The 2nd adhesive sheet 20 which concerns on this embodiment has the 2nd base material 21 and the 2nd adhesive layer 22. As shown in FIG. The second pressure-sensitive adhesive layer 22 is laminated on the second base material 21 .

・Second description

The constituent material of the second base material 21 according to the present embodiment is not particularly limited as long as it can function appropriately in a desired step such as a dicing step.

It is preferable that the 2nd base material 21 is comprised by the film which mainly has a resin material. As a film mainly made of a resin-based material, for example, an ethylene-based copolymer film, a polyolefin-based film, a polyvinyl chloride-based film, a polyester-based film, a polyurethane film, a polyimide film, a polystyrene film, a polycarbonate film and A fluororesin film is mentioned.

・Second adhesive layer

As long as the 2nd adhesive layer 22 can function suitably in desired processes, such as a dicing process, the structural material is not specifically limited.

The second pressure-sensitive adhesive layer 22 is preferably composed of at least one type of pressure-sensitive adhesive selected from the group consisting of, for example, an acrylic pressure-sensitive adhesive, a urethane pressure-sensitive adhesive, a polyester pressure-sensitive adhesive, a rubber pressure-sensitive adhesive, and a silicone pressure-sensitive adhesive, and is composed of an acrylic pressure-sensitive adhesive more preferably.

The 2nd adhesive layer 22 may be comprised from a non-energy-ray-curable adhesive, and may be comprised from an energy-beam curable adhesive.

[Effect concerning this embodiment]

According to the expand method according to the present embodiment, when the first sheet 10 is stretched, the circuit surface W1 of the semiconductor chip CP is formed between the first pressure-sensitive adhesive layer 12 of the first sheet 10 and not in contact In each of the semiconductor chips CP, the protective layer 100 separated in the dicing step is interposed between the circuit surface W1 and the first pressure-sensitive adhesive layer 12, so that the first sheet 10 is Even when stretched, the protective layer 100 in contact with the circuit surface W1 is not stretched. As a result, according to the expand method according to the present embodiment, pool residual can be suppressed.

Moreover, all of the adhesive sheets used in the expand method which concern on this embodiment are simple structures which consist of a base material and an adhesive layer. In addition, in order to replace with the adhesive sheet for expand processes from the adhesive sheet used when performing a dicing process before implementing an expand process, a dicing blade reaches the base material of a dicing sheet in a dicing process. To avoid this, there is no need to carefully control the depth of cut.

Therefore, according to the expand method which concerns on this embodiment, compared with the prior art, the structure and process of an adhesive sheet can be simplified, and also the glue residue can be suppressed.

Furthermore, it is possible to provide a method for manufacturing a semiconductor device including the expand method according to the present embodiment.

[Second Embodiment]

Next, a second embodiment of the present invention will be described.

The first embodiment and the second embodiment differ mainly in the following points. In the first embodiment, the protective layer is formed on the first object surface (circuit surface W1) of the object to be processed (semiconductor wafer W), whereas in the second embodiment, the protective layer and the third sheet are formed. A protective layer is formed on the object to be processed by affixing the second object surface (back surface W3) of the object to be processed (semiconductor wafer W) to the protective layer of the composite sheet having.

In the following description, the part regarding the difference from 1st Embodiment is mainly demonstrated, and overlapping description is abbreviate|omitted or simplified. The same code|symbol is attached|subjected to the structure similar to 1st Embodiment, and description is abbreviate|omitted or simplified.

6 ( FIGS. 6A , 6B and 6C ) and FIG. 7 ( FIGS. 7A , 7B and 7C ) are cross-sectional schematic views for explaining a method of manufacturing a semiconductor device including the expand method according to the present embodiment.

The expand method according to the present embodiment includes the following steps (PX1) to (PX5).

(PX1) A step of adhering the object to be processed to the protective layer of a composite sheet having a protective layer and a third sheet.

(PX2) A step of cutting the wafer by inserting a cut from the first object surface side of the object to be processed, and further, at least the protective layer is cut into pieces into a plurality of semiconductor devices. The first object surface to be processed serves as a circuit surface of the semiconductor device, and the second object surface to be processed serves as the back surface of the semiconductor device.

(PX3) A step of peeling the third sheet while leaving the protective layer on the back surface of the semiconductor device.

(PX4) A step of attaching the first sheet to the protective layer on the back side of the semiconductor device.

(PX5) A step of extending the first sheet to widen the distance between the plurality of semiconductor devices.

(composite sheet)

6A is a cross-sectional schematic view of the composite sheet 130 used in the present embodiment.

The composite sheet 130 has a protective layer 100A and a third sheet 30 . The composite sheet 130 holds the semiconductor wafer W when the semiconductor wafer W is diced. The semiconductor wafer W is adhered with the back surface W3 toward the protective layer 100A of the composite sheet 130 .

(protective layer)

A protective layer 100A in the composite sheet 130 is laminated on the third sheet 30 . The protective layer 100A is adhered to the back surface W3 (the back surface of the semiconductor device) of the semiconductor wafer W as the object to be processed and the semiconductor chip CP as the semiconductor device, particularly if the back surface W3 can be protected. not limited Examples of the protective layer 100A include a protective film and a protective sheet. It is preferable that it is 1 micrometer or more, and, as for the thickness of 100 A of protective layers, it is more preferable that it is 5 micrometers or more. It is preferable that it is 500 micrometers or less, and, as for the thickness of 100 A of protective layers, it is more preferable that it is 300 micrometers or less.

The protective layer 100A may be, for example, a protective layer similar to the protective layer 100 described in the first embodiment.

(3rd sheet)

The third sheet 30 in the composite sheet 130 is a member that supports the protective layer 100A. The material of the third sheet 30 is not particularly limited as long as it can support the protective layer 100A. In the step PX3 of the present embodiment, since the third sheet 30 is peeled off while the protective layer 100A is left on the back surface W3 of the semiconductor chip CP, the third sheet 30 is protected. It is preferable to be comprised from the material etc. which can peel from the layer 100A.

A more detailed example of the composite sheet 130 will be described later.

[Adhesive Process of Composite Sheet]

6B is a diagram for explaining the step PX1. 6B, the semiconductor wafer W to which the composite sheet 130 was stuck is described. It is preferable that the semiconductor wafer W in this embodiment is also a wafer obtained by passing through a backgrind process. This process (PX1) may be called a sticking process of a composite sheet.

As will be described later, in the step PX2 , the semiconductor wafer W is divided into a plurality of semiconductor chips CP by dicing. In this embodiment, when dicing the semiconductor wafer W, in order to hold the semiconductor wafer W, the composite sheet 130 is affixed to the back surface W3. The semiconductor wafer W is affixed toward the protective layer 100 of the composite sheet 130 on the back surface W3.

In this embodiment, although the aspect which advances a process in the state in which the circuit surface W1 is exposed is taken as an example and demonstrated, as an example of another aspect, for example, on the circuit surface W1, the protective layer 100A and is an aspect of advancing the process in a state in which another protective sheet or protective member such as a protective film is adhered.

[Dicing process]

6C is a diagram for explaining the step PX2. The step (PX2) is sometimes referred to as a dicing step. A plurality of semiconductor chips CP held by the composite sheet 130 are shown in FIG. 6C .

The semiconductor wafer W in the state by which the composite sheet 130 was stuck to the back surface W3 is divided into pieces by dicing, and several semiconductor chip CP is formed. The circuit surface W1 as the first semiconductor device surface corresponds to the circuit surface of the chip. The back surface W3 as the second semiconductor device surface corresponds to the chip back surface.

In this embodiment, a cut is made from the circuit surface W1 side, the semiconductor wafer W is cut|disconnected, and also the protective layer 100A of the composite sheet 130 is cut|disconnected at least.

The cutting depth at the time of dicing will not be specifically limited if it is a depth which can separate the semiconductor wafer W and the protective layer 100A into pieces. In this embodiment, although the aspect which does not put a cut to the 3rd sheet|seat 30 is mentioned as an example and demonstrated, this invention is not limited to this aspect. For example, in another embodiment, from the viewpoint of reliably cutting the semiconductor wafer W and the protective layer 100A, the cut may be formed at a depth until reaching the third sheet 30 by dicing. .

[Step of Peeling the Third Sheet]

7A is a diagram for explaining the step PX3. The process (PX3) may be called a peeling process of a 3rd sheet|seat. 7A, the process of peeling the 3rd sheet 30 is shown, leaving the protective layer 100A on the back surface W3 of the semiconductor chip CP divided into pieces after a dicing process.

As an aspect of the composite sheet 130 , when the protective layer 100A is directly laminated on the third sheet 30 , the protective layer 100A and the third sheet 30 are separated in the third sheet peeling process. ), it is preferable to peel at the interface of When the 3rd sheet|seat 30 is peeled, the some semiconductor chip CP by which the protective layer 100A was stuck to the back surface W3 is obtained.

It is preferable that the peeling force at the time of peeling the 3rd sheet|seat 30 from the protective layer 100A is 10 mN/25 mm or more and 2000 mN/25 mm or less. When the peeling force at the time of peeling the 3rd sheet 30 from the protective layer 100A is 10 mN/25 mm or more, the effect of being excellent in the semiconductor chip holding|maintenance at the time of dicing is acquired. When the peeling force at the time of peeling the 3rd sheet 30 from the protective layer 100A is 2000 mN/25 mm or less, the effect that it is excellent in the pick-up property of the semiconductor chip after dicing is acquired. The peeling force at the time of peeling the 3rd sheet 30 from the protective layer 100A is more preferably 30 mN/25 mm or more and 1000 mN/25 mm or less, 50 mN/25 mm or more, 500 mN/25 mm It is more preferable that it is the following.

[Step of sticking the first sheet]

7B is a diagram for explaining the step PX4. The step (PX4) is sometimes referred to as a step of sticking the first sheet. The state in which the 1st sheet|seat 10 was stuck to the some semiconductor chip CP obtained by the dicing process is shown by FIG. 7B. The first sheet 10 according to the present embodiment is the same as the first sheet 10 used in the first embodiment.

In this embodiment, when the 1st sheet 10 is stuck to the back surface W3 side of the some semiconductor chip CP, the 1st adhesive layer 12 of the some semiconductor chip CP and the 1st sheet 10 ) to obtain a laminated structure in which the individualized protective layer 100A is interposed.

[Expand process]

7C is a diagram for explaining the step PX5. The step (PX5) is sometimes referred to as an expand step. The state in which the space|interval of the some semiconductor chip CP was widened by extending|stretching the 1st sheet|seat 10 after sticking the 1st sheet|seat 10 is shown by FIG. 7C.

Also in the expand process in this embodiment, the method of extending the 1st sheet 10 is the same as that of 1st Embodiment. Also in this embodiment, since the space|interval D1 of several semiconductor chip CP depends on the size of the semiconductor chip CP, it is not restrict|limited in particular. It is preferable that the mutual space|interval D1 of the adjacent semiconductor chips CP is 200 micrometers or more. In addition, the upper limit in particular of the mutual space|interval of the said semiconductor chip CP is not restrict|limited. The upper limit of the mutual space|interval of the said semiconductor chip CP may be 6000 micrometers, for example.

[First transfer process]

In the present embodiment, after the expand step, the step of transferring the plurality of semiconductor chips CP adhered to the first sheet 10 to the sixth adhesive sheet 60 in the same manner as in the first embodiment (hereinafter referred to as the following) "1st transfer process" may be performed).

When performing a transfer process in this embodiment, for example, after an expand process, the 6th adhesive sheet 60 is affixed to the circuit surface W1 of some semiconductor chip CP, After that, It is preferable to peel the 1st sheet 10 and the protective layer 100A from the back surface W3. The first sheet 10 and the protective layer 100A may be peeled together from the back surface W3, or the protective layer 100A may be peeled from the back surface W3 after the first sheet 10 is peeled off first. The process of peeling the protective layer 100A from the back surface W3 may be called the peeling process of a protective layer.

It is preferable that the space|interval D1 between the some semiconductor chip CP extended in the expand process is maintained also after the peeling process of 100 A of protective layers.

When peeling the protective layer 100A from the back surface W3, it is preferable that the protective layer 100A contains the 1st energy-beam curable resin from one viewpoint of suppressing the glue residue to the back surface W3. . When the protective layer 100A contains the first energy ray-curable resin, the protective layer 100A is irradiated with an energy ray to cure the first energy ray-curable resin. When the first energy ray-curable resin is cured, the cohesive force of the protective layer 100A increases, and the adhesive force between the protective layer 100A and the back surface W3 of the semiconductor chip CP can be reduced or eliminated. As an energy beam, an ultraviolet-ray (UV), an electron beam (EB), etc. are mentioned, for example, An ultraviolet-ray is preferable. Therefore, it is preferable that 1st energy ray-curable resin is resin of an ultraviolet curable type.

From one viewpoint of peeling the first sheet 10 together with the protective layer 100A from the back surface W3, when the first sheet 10 includes the first pressure-sensitive adhesive layer 12, the first pressure-sensitive adhesive layer ( 12) It is preferable to contain 2nd energy-beam curable resin. When the protective layer 100A contains the 1st energy-beam curable resin and the 1st adhesive layer 12 contains the 2nd energy-beam curable resin, the 1st adhesive from the 1st base material 11 side The layer 12 and the protective layer 100A are irradiated with an energy ray to cure the second energy ray curable resin and the first energy ray curable resin. As an energy beam for hardening 2nd energy-ray-curable resin, an ultraviolet-ray (UV), an electron beam (EB), etc. are mentioned, for example, An ultraviolet-ray is preferable. Therefore, it is preferable that 2nd energy ray-curable resin is resin of an ultraviolet curable type. It is preferable that the 1st base material 11 has the permeability|transmittance of an energy ray.

Moreover, as a form different from this embodiment, even if it uses as a protective film for protecting the back surface W3 of the semiconductor chip CP without peeling the protective layer 100A from the back surface W3 of the semiconductor chip CP, do. When using the protective layer 100A as a protective film of the back surface W3, it is preferable that 100 A of protective layers contain a sclerosing|hardenable adhesive composition.

[Encapsulation process and other processes]

Also in this embodiment, you may implement a sealing process and other processes (a rewiring layer formation process and a connection process with an external terminal electrode) similarly to 1st Embodiment.

(composite sheet)

In one aspect of this embodiment, it is also preferable that the protective layer 100A of the composite sheet 130 is a 3rd adhesive layer, and it is also preferable that the 3rd sheet|seat 30 is a 3rd base material. That is, the composite sheet 130 is an adhesive sheet which has a 3rd base material and a 3rd adhesive layer, Comprising: It is preferable that peeling is possible between a 3rd base material and a 3rd adhesive layer.

・Third description

As for the 3rd base material which concerns on this embodiment, as long as it can function suitably in a desired process, the structural material is not specifically limited. A 3rd base material is a member which supports a 3rd adhesive layer.

The third substrate is, for example, a resin film. Examples of the resin film include polyethylene film, polypropylene film, polybutene film, polybutadiene film, polymethylpentene film, polyvinyl chloride film, vinyl chloride copolymer film, polyethylene terephthalate film, polyethylene naphthalate film, polybutyl Renterephthalate film, polyurethane film, ethylene vinyl acetate copolymer film, ionomer resin film, ethylene/(meth)acrylic acid copolymer film, ethylene/(meth)acrylic acid ester copolymer film, polystyrene film, polycarbonate film, polyvinyl chloride film At least any film selected from the group consisting of a mid film and a fluororesin film is used. Moreover, as a 3rd base material, these crosslinked films are also used. In addition, these laminated|multilayer films may be sufficient as a 3rd base material.

Moreover, a rigid support body may be sufficient as a 3rd base material, for example. The material of the rigid support may be appropriately determined in consideration of mechanical strength, heat resistance, and the like. The material of the hard support is, for example, a metal material such as SUS; Non-metallic inorganic materials, such as glass and a silicon wafer; resin materials such as epoxy, ABS resin, acrylic resin, engineering plastic, super engineering plastic, polyimide resin, and polyamideimide resin; Composite materials, such as a glass epoxy resin, etc. are mentioned, Among these, SUS, glass, and a silicon wafer are preferable. As engineering plastics, nylon, polycarbonate (PC), polyethylene terephthalate (PET), etc. are mentioned. Examples of super engineering plastics include polyphenylene sulfide (PPS), polyether sulfone (PES), and polyether ether ketone (PEEK).

The thickness of the third substrate is not particularly limited. The thickness of the third substrate is preferably 20 µm or more and 50 mm or less, and more preferably 60 µm or more and 20 mm or less. By setting the thickness of the third substrate within the above range, when the third substrate is a resin film, since the third sheet 30 has sufficient flexibility, good sticking properties are exhibited to the object (workpiece) to be processed. The object to be processed is, for example, a wafer or a semiconductor element, and a more specific example is a semiconductor wafer or a semiconductor chip. When the third substrate is a rigid support, the thickness of the rigid support may be appropriately determined in consideration of mechanical strength, handleability, and the like. The thickness of the rigid support is, for example, 100 µm or more and 50 mm or less.

・Third adhesive layer

The 3rd adhesive layer is not specifically limited as long as it can function suitably in a desired process.

In one aspect of the third pressure-sensitive adhesive layer, for example, it is preferably composed of at least one type of pressure-sensitive adhesive selected from the group consisting of an acrylic pressure-sensitive adhesive, a urethane-based pressure-sensitive adhesive, a polyester-based pressure-sensitive adhesive, a rubber-based pressure-sensitive adhesive, and a silicone pressure-sensitive adhesive, and composed of an acrylic pressure-sensitive adhesive It is more preferable to be

In one aspect of the 3rd adhesive layer, it is preferable to contain the curable adhesive composition which receives energy from the outside and hardens. Examples of the energy supplied from the outside include ultraviolet rays, electron beams, and heat. It is preferable that the 3rd adhesive layer contains at least any 1 sort(s) of an ultraviolet curable adhesive and a thermosetting adhesive. When the 3rd base material is equipped with heat resistance, it is preferable that the adhesive layer is a thermosetting adhesive layer containing a thermosetting adhesive from the point which can suppress generation|occurrence|production of the residual stress at the time of thermosetting.

The 3rd adhesive layer contains a 1st adhesive composition, for example. A 1st adhesive composition contains a binder polymer component (A) and a curable component (B).

(A) binder polymer component

The binder polymer component (A) is used in order to provide sufficient adhesiveness and film-forming property (sheet-forming property) to a 3rd adhesive layer. As the binder polymer component (A), conventionally known acrylic polymers, polyester resins, urethane resins, acrylic urethane resins, silicone resins, rubber-based polymers and the like can be used.

It is preferable that they are 10,000 or more and 2 million or less, and, as for the weight average molecular weight (Mw) of a binder polymer component (A), it is more preferable that they are 100,000 or more and 1.2 million or less. The weight average molecular weight (Mw) in this specification is a standard polystyrene conversion value measured by the Gel Permeation Chromatography (GPC) method.

As the binder polymer component (A), an acrylic polymer is preferably used. The glass transition temperature (Tg) of the acrylic polymer is preferably in the range of -60°C or more and 50°C or less, more preferably -50°C or more and 40°C or less, and still more preferably -40°C or more and 30°C or less.

As a monomer which comprises the said acrylic polymer, a (meth)acrylic acid ester monomer or its derivative(s) is mentioned. For example, alkyl (meth) acrylate having 1 to 18 carbon atoms in the alkyl group, specifically methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth)acrylate, etc. are mentioned. In addition, (meth) acrylate having a cyclic skeleton, specifically cyclohexyl (meth) acrylate, benzyl (meth) acrylate, isobornyl (meth) acrylate, dicyclopentanyl (meth) acrylate, dicyclo Clopentenyl (meth)acrylate, dicyclopentenyloxyethyl (meth)acrylate, imide (meth)acrylate, etc. are mentioned. Moreover, as a monomer which has a functional group, the hydroxymethyl (meth)acrylate which has a hydroxyl group, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, etc. are mentioned; In addition, the glycidyl (meth)acrylate etc. which have an epoxy group are mentioned. An acrylic polymer is preferable since the acrylic polymer containing the monomer which has a hydroxyl group has good compatibility with the sclerosing|hardenable component (B) mentioned later. Moreover, the said acrylic polymer may copolymerize at least 1 sort(s) chosen from the group which consists of acrylic acid, methacrylic acid, itaconic acid, vinyl acetate, acrylonitrile, and styrene, for example.

Moreover, as a binder polymer component (A), you may mix|blend the thermoplastic resin for maintaining the flexibility of the film|membrane of the 3rd adhesive layer after hardening. As such a thermoplastic resin, resin whose weight average molecular weights are 1000 or more and 100,000 or less is preferable, and the resin whose weight average molecular weight is 3000 or more and 80,000 or less is more preferable. The glass transition temperature of the thermoplastic resin is preferably -30°C or higher and 120°C or lower, more preferably -20°C or higher and 120°C or lower. As a thermoplastic resin, a polyester resin, a urethane resin, a phenoxy resin, polybutene, polybutadiene, or polystyrene, etc. are mentioned. These thermoplastic resins can be used individually by 1 type or in mixture of 2 or more types.

(B) curable component

As the curable component (B), at least any one of a thermosetting component and an energy ray-curable component is used. As the curable component (B), a thermosetting component and an energy ray-curable component may be used.

As the thermosetting component, a thermosetting resin and a thermosetting agent are used. As a thermosetting resin, an epoxy resin is preferable, for example.

As an epoxy resin, a conventionally well-known epoxy resin can be used. Specific examples of the epoxy resin include polyfunctional epoxy resins, bisphenol A diglycidyl ethers and hydrogenated products thereof, orthocresol novolac epoxy resins, dicyclopentadiene type epoxy resins, biphenyl type epoxy resins, and bisphenol A type epoxy resins. The epoxy compound which has bifunctional or more in a molecule|numerator, such as an epoxy resin, a bisphenol F-type epoxy resin, and a phenylene skeleton type|mold epoxy resin, is mentioned. These can be used individually by 1 type or in combination of 2 or more type.

In a 3rd adhesive layer, with respect to 100 mass parts of binder polymer components (A), Preferably a thermosetting resin is contained in 1 mass part or more and 1000 mass parts or less, More preferably, 10 mass parts or more and 500 mass parts are contained. The following is included, More preferably, 20 mass parts or more and 200 mass parts or less are contained. When content of a thermosetting resin is 1 mass part or more, the problem that sufficient adhesiveness is not obtained can be suppressed. When content of a thermosetting resin is 1000 mass parts or less, it can prevent that the peeling force of a 3rd adhesive layer and a 3rd base material becomes high too much. When the said peeling force is prevented from becoming high too much, the transfer defect with respect to the back surface W3 of the semiconductor chip CP of a 3rd adhesive layer can be prevented.

A thermosetting agent functions as a hardening|curing agent with respect to a thermosetting resin, especially an epoxy resin. As a preferable thermosetting agent, the compound which has 2 or more of functional groups which can react with an epoxy group in 1 molecule is mentioned. As a functional group which can react with an epoxy group, a phenolic hydroxyl group, alcoholic hydroxyl group, an amino group, a carboxyl group, an acid anhydride group, etc. are mentioned. Among these, preferably, a phenolic hydroxyl group, an amino group, an acid anhydride, etc. are mentioned, More preferably, a phenolic hydroxyl group and an amino group are mentioned.

Specific examples of the phenol-based curing agent include polyfunctional phenol resins, biphenols, novolak-type phenol resins, dicyclopentadiene-type phenol resins, xylok-type phenol resins, and aralkylphenol resins. Specific examples of the amine curing agent include DICY (dicyandiamide). These can be used individually by 1 type or in mixture of 2 or more types.

It is preferable that they are 0.1 mass part or more and 500 mass parts or less with respect to 100 mass parts of thermosetting resins, and, as for content of a thermosetting agent, it is more preferable that they are 1 mass part or more and 200 mass parts or less.

When a 3rd adhesive layer contains a thermosetting component as a sclerosing|hardenable component (B), a 3rd adhesive layer has thermosetting. In this case, although it becomes possible to harden|cure a 3rd adhesive layer by heating, in the 1st sheet 10 of this embodiment, when a 3rd base material has heat resistance, at the time of thermosetting of a 3rd adhesive layer , it is unlikely that residual stress is generated in the substrate to cause a problem.

As an energy-beam-curable component, it contains an energy-beam polymeric group and can use the low molecular weight compound (energy-beam polymeric compound) which polymerizes and hardens when irradiated with energy rays, such as an ultraviolet-ray and an electron beam. Specific examples of such energy ray-curable components include trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, and dipentaerythritol hexaacrylate. , or 1,4-butylene glycol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, oligoester acrylate, urethane acrylate oligomer, epoxy-modified acrylate, polyether acrylate and Acrylate-type compounds, such as an itaconic acid oligomer, are mentioned. Such compounds have at least one polymerizable double bond in the molecule, and usually have a weight average molecular weight of 100 or more and 30000 or less, preferably 300 or more and 10000 or less. The blending amount of the energy ray polymerizable compound is preferably 1 part by mass or more and 1500 parts by mass or less, more preferably 10 parts by mass or more and 500 parts by mass or less, with respect to 100 parts by mass of the binder polymer component (A), More preferably, they are 20 mass parts or more and 200 mass parts or less.

Moreover, as an energy-beam curable component, you may use the energy-beam curable polymer in which the energy-beam polymeric group couple|bonded with the main chain or side chain of a binder polymer component (A). Such an energy ray-curable polymer has both a function as a binder polymer component (A), and a function as a sclerosing|hardenable component (B).

The main skeleton of the energy ray-curable polymer is not particularly limited, and may be an acrylic polymer commonly used as the binder polymer component (A), or may be polyester or polyether, but from the point of easy synthesis and control of physical properties. , it is preferable to use an acrylic polymer as the main skeleton.

The energy ray polymerizable group bonded to the main chain or the side chain of the energy ray curable polymer is, for example, a group containing an energy ray polymerizable carbon-carbon double bond, specifically, a (meth) acryloyl group, etc. can do. The energy-beam polymerizable group may be couple|bonded with the energy-beam curable polymer via an alkylene group, an alkyleneoxy group, and a polyalkyleneoxy group.

The weight average molecular weight (Mw) of the energy ray-curable polymer to which the energy ray polymerizable group is bonded is preferably 10,000 or more and 2 million or less, and more preferably 100,000 or more and 1.5 million or less. In addition, the glass transition temperature (Tg) of the energy ray-curable polymer is preferably -60°C or more and 50°C or less, more preferably -50°C or more and 40°C or less, and still more preferably -40°C or more and 30°C or less.

The energy ray-curable polymer is obtained, for example, by reacting an acrylic polymer containing a functional group with a compound containing a polymerizable group. As a functional group which the acrylic polymer containing this functional group has, a hydroxyl group, a carboxyl group, an amino group, a substituted amino group, an epoxy group, etc. are mentioned, for example. This polymerizable group-containing compound is a polymerizable group-containing compound having 1 to 5 energy ray polymerizable carbon-carbon double bonds per molecule and a substituent reactive with the substituent of the acrylic polymer. As a substituent which reacts with the functional group, an isocyanate group, a glycidyl group, a carboxyl group, etc. are mentioned.

Examples of the polymerizable group-containing compound include (meth)acryloyloxyethyl isocyanate, meta-isopropenyl-α,α-dimethylbenzyl isocyanate, (meth)acryloyl isocyanate, allyl isocyanate, glycidyl (meth)acrylate. , (meth)acrylic acid, and the like.

The acrylic polymer is a copolymer comprising a (meth)acrylic monomer or a derivative thereof having a functional group such as a hydroxyl group, a carboxyl group, an amino group, a substituted amino group, and an epoxy group, and another (meth)acrylic acid ester monomer copolymerizable therewith or a derivative thereof. it is preferable

As a (meth)acryl monomer or its derivative(s) which has functional groups, such as a hydroxyl group, a carboxyl group, an amino group, a substituted amino group, and an epoxy group, 2-hydroxyethyl (meth)acrylate which has a hydroxyl group, 2-hydroxy propyl (meth)acrylate; Acrylic acid, methacrylic acid, itaconic acid which have a carboxyl group; The glycidyl methacrylate which has an epoxy group, glycidyl acrylate, etc. are mentioned.

Examples of other (meth)acrylic acid ester monomers copolymerizable with the (meth)acrylic monomer or derivatives thereof include alkyl (meth)acrylates having 1 to 18 carbon atoms in the alkyl group, specifically methyl (meth) ) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, and 2-ethylhexyl (meth) acrylate.

As another (meth)acrylic acid ester monomer copolymerizable with the said (meth)acrylic monomer, or its derivative(s), (meth)acrylate which has a cyclic skeleton is mentioned, for example, Specifically, cyclohexyl (meth) Acrylate, benzyl (meth)acrylate, isobornyl acrylate, dicyclopentanyl acrylate, dicyclopentenyl acrylate, dicyclopentenyloxyethyl acrylate, imide acrylate, etc. are mentioned. Moreover, at least any selected from the group which consists of vinyl acetate, acrylonitrile, and styrene may be copolymerized with the said acrylic polymer, for example.

Even when using an energy-beam curable polymer, an above-described energy-beam polymerizable compound may be used together, and a binder polymer component (A) may be used together. As for the relationship between the compounding quantity of these 3 in the 3rd adhesive layer in this embodiment, with respect to a total of 100 mass parts of the mass of an energy-beam curable polymer and a binder polymer component (A), Preferably an energy-beam polymeric compound is 1 They are contained in mass parts or more and 1500 mass parts or less, More preferably, 10 mass parts or more and 500 mass parts or less are contained, More preferably, 20 mass parts or more and 200 mass parts or less are contained.

By providing energy-beam sclerosis|hardenability to a 3rd adhesive layer, a 3rd adhesive layer can be hardened easily and in a short time, and the productive efficiency of the chip|tip with a hardening adhesive layer improves. A cured adhesive layer can function also as a protective film for protecting a semiconductor element. Conventionally, a protective film for semiconductor elements such as chips is generally formed of a thermosetting resin such as an epoxy resin, but the curing temperature of the thermosetting resin exceeds 200°C, and the curing time is about 2 hours. Therefore, it became an obstacle to the improvement of production efficiency. However, since the energy-beam-curable adhesive layer hardens|cures in a short time by energy-beam irradiation, it can form a protective film easily, and can contribute to the improvement of productive efficiency.

・Other ingredients

The third pressure-sensitive adhesive layer may include the following components in addition to the binder polymer component (A) and the curable component (B).

(CX) colorant

A 3rd adhesive layer contains a coloring agent (CX) in one aspect|mode. In the case where the third pressure-sensitive adhesive layer is cured to form a protective film for the semiconductor chip (CP) by blending the colorant with the third pressure-sensitive adhesive layer, when the semiconductor device is incorporated into the device, the protective film protects against infrared rays etc. generated from surrounding devices. By shielding, it is possible to prevent malfunction of the semiconductor device due to those infrared rays or the like. Moreover, the visibility of the character when a product number etc. are printed on the hardening adhesive layer (protective film) obtained by hardening|curing the 3rd adhesive layer containing a coloring agent (CX) improves. That is, in a semiconductor device or a semiconductor chip provided with a protective film, the part number or the like is usually printed on the surface of the protective film by a laser marking method (a method of printing by scraping the protective film surface with a laser beam). When the protective film contains the colorant (CX), the contrast difference between the portion of the protective film that is cut by the laser beam and the portion that is not shaved is sufficiently obtained, and visibility is improved. As the colorant (CX), at least any one of an organic pigment, an inorganic pigment, an organic dye, and an inorganic dye is used. As a coloring agent (CX), a black pigment is preferable at the point of electromagnetic wave or infrared-shielding property. As a black pigment, although carbon black, iron oxide, manganese dioxide, aniline black, activated carbon, etc. are used, it is not limited to these. From a viewpoint of improving the reliability of a semiconductor device, as a coloring agent (CX), carbon black is especially preferable. A coloring agent (CX) may be used individually by 1 type, and may be used in combination of 2 or more type. The high curability of the 3rd adhesive layer in this embodiment is exhibited especially preferably when the transmittance|permeability of an ultraviolet-ray falls using the coloring agent which reduces the transmittance|permeability of both, at least any one of visible light and infrared rays, and an ultraviolet-ray. . As a colorant that reduces the transmittance of at least any of visible light and infrared light and both ultraviolet rays, in addition to the above-mentioned black pigment, it is not particularly limited as long as it is a colorant having absorptivity or reflectivity in both wavelength ranges of visible light and infrared light and ultraviolet rays. does not

The blending amount of the colorant (CX) is preferably 0.1 parts by mass or more, 35 parts by mass or less, more preferably 0.5 parts by mass or more, 25 parts by mass or less, with respect to 100 parts by mass of the total solid content constituting the third pressure-sensitive adhesive layer, More preferably, they are 1 mass part or more and 15 mass parts or less.

(D) curing accelerator

The curing accelerator (D) is used to adjust the curing rate of the third pressure-sensitive adhesive layer. A hardening accelerator (D) is used preferably especially when using an epoxy resin and a thermosetting agent together in a sclerosing|hardenable component (B).

Preferable curing accelerators include tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris(dimethylaminomethyl)phenol; 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5 -Imidazoles, such as hydroxymethyl imidazole; organic phosphines such as tributylphosphine, diphenylphosphine, and triphenylphosphine; Tetraphenyl boron salts, such as tetraphenylphosphonium tetraphenyl borate and a triphenylphosphine tetraphenyl borate, etc. are mentioned. These hardening accelerators can be used individually by 1 type or in mixture of 2 or more types.

The curing accelerator (D) is preferably contained in an amount of 0.01 parts by mass or more and 10 parts by mass or less, more preferably 0.1 parts by mass or more and 1 part by mass or less with respect to 100 parts by mass of the curable component (B).

(EX) coupling agent

You may use a coupling agent (EX) in order to improve at least any of the adhesiveness with respect to the semiconductor element of a 3rd adhesive layer, adhesiveness, and the cohesiveness of a hardening adhesive layer (protective film). Moreover, the water resistance can be improved, without impairing the heat resistance of the hardening adhesive layer (protective film) obtained by hardening|curing a 3rd adhesive layer by using a coupling agent (EX).

As a coupling agent (EX), the compound which has a group which reacts with the functional group which a binder polymer component (A), a sclerosing|hardenable component (B), etc. have is used preferably. As the coupling agent (EX), a silane coupling agent is preferable. Examples of such a silane coupling agent include γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-(meth Cryloxypropyl) trimethoxysilane, γ-aminopropyltrimethoxysilane, N-6-(aminoethyl)-γ-aminopropyltrimethoxysilane, N-6-(aminoethyl)-γ-aminopropylmethyl Diethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, γ-mercaptopropylmethyldimethoxysilane, bis(3 -triethoxysilylpropyl)tetrasulfane, methyltrimethoxysilane, methyltriethoxysilane, vinyltrimethoxysilane, vinyltriacetoxysilane, imidazolesilane, etc. are mentioned. These coupling agents (EX) can be used individually by 1 type or in mixture of 2 or more types.

The coupling agent (EX) is usually contained in an amount of 0.1 parts by mass or more and 20 parts by mass or less, preferably 0.2 parts by mass or more, 10 parts by mass or more with respect to 100 parts by mass in total of the binder polymer component (A) and the curable component (B). It is contained in mass parts or less, More preferably, it is contained in the ratio of 0.3 mass part or more and 5 mass parts or less.

(F) inorganic fillers

By mix|blending an inorganic filler (F) with a 3rd adhesive layer, it becomes possible to adjust the thermal expansion coefficient in the hardening adhesive layer (protective film) after hardening.

Preferred inorganic fillers include powders such as silica, alumina, talc, calcium carbonate, titanium oxide, iron oxide, silicon carbide and boron nitride, beads obtained by spheroidizing these, single crystal fibers, glass fibers, and the like. Among these inorganic fillers, a silica filler and an alumina filler are preferable. The said inorganic filler (F) can be used individually by 1 type or in mixture of 2 or more types. Adjustment of content of an inorganic filler (F) is possible in the range of 1 mass part or more and 80 mass parts or less normally with respect to 100 mass parts of total solids which comprise an adhesive bond layer.

(G) photoinitiator

When a 3rd adhesive layer contains an energy-beam sclerosing|hardenable component as said sclerosing|hardenable component (B), at the time of the use, energy rays, such as an ultraviolet-ray, are irradiated and an energy-beam sclerosing|hardenable component is hardened. At this time, by containing a photoinitiator (G) in the composition which comprises a 3rd adhesive layer, polymerization hardening time can be shortened and the amount of light irradiation can be decreased.

Specifically as such a photoinitiator (G), benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin benzoic acid Methyl, benzoin dimethyl ketal, 2,4-diethylthioxanthone, α-hydroxycyclohexylphenyl ketone, benzyldiphenylsulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, benzyl, di Benzyl, diacetyl, 1,2-diphenylmethane, 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone, 2,4,6-trimethylbenzoyldiphenylphosphine oxide and β-chloranthraquinone; and the like. A photoinitiator (G) can be used individually by 1 type or in combination of 2 or more types.

It is preferable that 0.1 mass part or more and 10 mass parts or less are contained with respect to 100 mass parts of energy-beam sclerosing|hardenable components, and, as for the compounding ratio of a photoinitiator (G), it is more preferable that 1 mass part or more and 5 mass parts or less are contained. When the mixing ratio of the photoinitiator (G) is 0.1 parts by mass or more, the problem that satisfactory transferability is not obtained due to insufficient photopolymerization can be prevented. When the mixing ratio of the photopolymerization initiator (G) is 10 parts by mass or less, the problem that a residue that does not contribute to photopolymerization is generated and the curability of the third pressure-sensitive adhesive layer becomes insufficient can be prevented.

(H) crosslinking agent

In order to adjust the initial adhesive force and cohesive force of the third pressure-sensitive adhesive layer, a crosslinking agent may be added to the third pressure-sensitive adhesive layer. As a crosslinking agent (H), an organic polyvalent isocyanate compound, an organic polyvalent imine compound, etc. are mentioned.

Examples of the organic polyvalent isocyanate compound include an aromatic polyvalent isocyanate compound, an aliphatic polyvalent isocyanate compound, an alicyclic polyvalent isocyanate compound, a trimer of these organic polyvalent isocyanate compounds, and a terminal isocyanate urethane prepolymer obtained by reacting these organic polyvalent isocyanate compounds with a polyol compound. and the like.

Examples of the organic polyvalent isocyanate compound include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylene diisocyanate, 1,4-xylene diisocyanate, and diphenylmethane-4,4'- Diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexyl methane-2,4'-diisocyanate, trimethylolpropane adduct tolylene diisocyanate, and lysine isocyanate.

Specifically as the organic polyvalent imine compound, N,N'-diphenylmethane-4,4'-bis(1-aziridinecarboxamide), trimethylolpropane-tri-β-aziridinylpropionate, tetra and methylolmethane-tri-β-aziridinylpropionate and N,N'-toluene-2,4-bis(1-aziridinecarboxamide)triethylenemelamine.

The crosslinking agent (H) is usually used in an amount of 0.01 parts by mass or more and 20 parts by mass or less, preferably 0.1 parts by mass or more and 10 parts by mass, with respect to 100 parts by mass of the total amount of the binder polymer component (A) and the energy ray-curable polymer. It is used in the ratio of parts or less, More preferably, it is used in the ratio of 0.5 mass part or more and 5 mass parts or less.

(I) Universal Additives

In addition to the above, various additives may be mix|blended with a 3rd adhesive layer as needed. As various additives, a leveling agent, a plasticizer, an antistatic agent, antioxidant, an ion trapping agent, a gettering agent, a chain transfer agent, etc. are mentioned.

The third pressure-sensitive adhesive layer composed of each component as described above has adhesiveness and curability, and in an uncured state, it is easily adhered by pressing the object to be processed (semiconductor wafer or chip, etc.). In addition, a single layer structure may be sufficient as a 3rd adhesive layer, and a multilayer structure may be sufficient as long as it contains one or more layers containing the said component.

The thickness of the 3rd adhesive layer is not specifically limited. The thickness of a 3rd adhesive layer becomes like this. Preferably they are 3 micrometers or more and 300 micrometers or less, More preferably, they are 5 micrometers or more and 250 micrometers or less, More preferably, they are 7 micrometers or more and 200 micrometers or less.

The above is description regarding a 3rd adhesive layer.

・Releasable sheet

A release sheet may be affixed on the surface of the composite sheet 130 . The release sheet is specifically affixed on the surface of the 3rd adhesive layer of the composite sheet 130. As shown in FIG. A release sheet protects a 3rd adhesive layer at the time of transportation and storage by affixing on the surface of a 3rd adhesive layer. The peeling sheet is affixed to the composite sheet 130 so that peeling is possible, and it peels and removes from the composite sheet 130 before the composite sheet 130 is used.

As for the release sheet, a release sheet in which at least one surface was subjected to a release treatment is used. Specifically, the release sheet provided with the base material for release sheets, and the release agent layer which apply|coated and formed the release agent on the surface of this base material is mentioned, for example.

As a base material for release sheets, a resin film is preferable. Examples of the resin constituting the resin film as the base material for release sheets include polyester resin films such as polyethylene terephthalate resin, polybutylene terephthalate resin and polyethylene naphthalate resin, and polyolefin resin such as polypropylene resin and polyethylene resin. and the like.

Examples of the release agent include rubber-based elastomers such as silicone-based resins, olefin-based resins, isoprene-based resins and butadiene-based resins, long-chain alkyl-based resins, alkyd-based resins, and fluorine-based resins.

Although there is no restriction|limiting in particular as for the thickness of a release sheet, It is preferable that they are 10 micrometers or more and 200 micrometers or less, and it is more preferable that they are 20 micrometers or more and 150 micrometers or less.

[Effect concerning this embodiment]

According to the expand method according to the present embodiment, when the first sheet 10 is stretched, the back surface W3 of the semiconductor chip CP is in contact with the first pressure-sensitive adhesive layer 12 of the first sheet 10 and there is not In each of the semiconductor chips CP, the protective layer 100A separated into pieces in the dicing step is interposed between the back surface W3 and the first pressure-sensitive adhesive layer 12, so that the first sheet 10 is stretched. Even if it is made, the 1st adhesive layer 12 which is in contact with the back surface W3 is not stretched. As a result, according to the expand method according to the present embodiment, pool residual can be suppressed.

In addition, in this embodiment, at the time of a dicing process, the semiconductor wafer W is not supported by the dicing sheet, but is supported by the composite sheet 130. As shown in FIG. Therefore, in order to form the layer (protective layer 100A in this embodiment) for protecting the back surface W3 of the semiconductor chip CP after dicing, from the adhesive sheet used in the dicing process to another adhesive sheet. Even if it does not perform a replacement process, when peeling between the protective layer 100A and the 3rd sheet|seat 30, the layer for protecting the back surface W3 can be formed.

In addition, before performing the expand process, since the adhesive sheet used when performing the dicing process can be replaced with the adhesive sheet for an expand process, in a dicing process, a dicing blade is the base material of a dicing sheet. There is no need to carefully control the depth of cut to avoid reaching

Therefore, according to the expand method according to the present embodiment, the tape configuration and process can be simplified compared to the prior art, and the residual glue can be suppressed.

Furthermore, it is possible to provide a method for manufacturing a semiconductor device including the expand method according to the present embodiment.

[Third Embodiment]

Next, a third embodiment of the present invention will be described.

The first embodiment and the third embodiment differ mainly in the following points.

In the first embodiment, a protective layer is formed on the first object surface (circuit surface W1) of the object to be processed (semiconductor wafer W), and after the dicing process, before the expand process, the dicing sheet (second The adhesive sheet 20) was replaced with an expand sheet (first sheet). On the other hand, in the third embodiment, the second object surface (back surface W3) of the object to be processed (semiconductor wafer W) is adhered to the protective layer of the composite sheet having the protective layer and the first sheet, A protective layer is formed on the object to be processed, and after the dicing process, the expand process is performed without replacing the first sheet with another sheet.

In the following description, the part regarding the difference from 1st Embodiment is mainly demonstrated, and overlapping description is abbreviate|omitted or simplified. The same code|symbol is attached|subjected to the structure similar to 1st Embodiment, and description is abbreviate|omitted or simplified.

The expand method according to the present embodiment includes the steps of the following steps (PY1) to (PY3).

(PY1) A step of adhering the object to be processed to the protective layer of a composite sheet having a protective layer and a first sheet. The protective layer has substantially the same shape as the object to be processed.

(PY2) A step of cutting the wafer by inserting a cut from the first object surface side of the object to be processed, and further, at least the protective layer is cut into pieces into a plurality of semiconductor devices. The first object surface to be processed serves as a circuit surface of the semiconductor device, and the second object surface to be processed serves as the back surface of the semiconductor device.

(PY3) A step of extending the first sheet to widen the distance between the plurality of semiconductor devices.

8 (FIG. 8A, FIG. 8B, and FIG. 8C) and FIG. 9 are cross-sectional schematic diagrams explaining the manufacturing method of the semiconductor device including the expand method which concerns on this embodiment.

(composite sheet)

Fig. 8A is a schematic cross-sectional view of the composite sheet 140 used in the present embodiment.

The composite sheet 140 has a protective layer 100B and a first sheet 10 . The composite sheet 140 holds the semiconductor wafer W when dicing the semiconductor wafer W, and holds the semiconductor chip CP when performing the expand process. The semiconductor wafer W is affixed toward the protective layer 100B of the composite sheet 140 with the back surface W3.

It is preferable that the 1st sheet 10 and the protective layer 100B adhered to the back surface W3 are the laminated composite sheets 140 laminated|stacked in advance.

(protective layer)

The protective layer 100B in the composite sheet 140 is laminated on the first sheet 10 . The protective layer 100B is adhered to the back surface W3 (the back surface of the semiconductor device) of the semiconductor wafer W as the object to be processed and the semiconductor chip CP as the semiconductor device, particularly if the back surface W3 can be protected. not limited

In this embodiment, the protective layer 100B is substantially the same shape as the back surface W3 of the semiconductor wafer W. It is preferable that the shape of the protective layer 100B is a shape which can cover the back surface W3 of the semiconductor wafer W. Therefore, it is preferable that the protective layer 100B is substantially the same as the back surface W3 of the semiconductor wafer W, or it is formed slightly larger than the back surface W3.

In addition, it is preferable that the protective layer 100B is formed smaller than the 1st sheet|seat 10 in the surface direction of a sheet|seat. A jig, such as a ring frame, can be affixed to the part of the 1st adhesive layer 12 of the 1st sheet 10 on which the protective layer 100B is not laminated|stacked.

The protective layer 100B according to the present embodiment consists of a single layer. Note that the protective layer 100B may be a sheet in which a plurality of layers are laminated. It is preferable that the protective layer 100B consists of a single layer from a viewpoint of the easiness of control of a light transmittance, and a manufacturing cost.

It is preferable that it is 1 micrometer or more, and, as for the thickness of the protective layer 100B, it is more preferable that it is 5 micrometers or more. It is preferable that it is 500 micrometers or less, and, as for the thickness of the protective layer 100B, it is more preferable that it is 300 micrometers or less.

As the protective layer 100B, a protective film and a protective sheet are mentioned, for example. The protective layer 100B may be, for example, a protective layer similar to the protective layer 100 described in the first embodiment. In addition, another preferable aspect of the protective layer 100B is mentioned later.

(1st sheet)

The first sheet 10 in the composite sheet 140 is a member that supports the protective layer 100B. The material of the first sheet 10 is not particularly limited as long as it can support the protective layer 100B.

The 1st sheet 10 in the composite sheet 140 has the 1st adhesive layer 12 and the 1st base material 11. As shown in FIG. The first sheet 10 is the same as the first sheet 10 of the first embodiment.

In the present embodiment, when the first sheet 10 is made of a material or the like that can be peeled from the protective layer 100B, the first sheet 10 is left with the protective layer 100B on the back surface W3 of the semiconductor chip CP. The sheet 10 may be peeled off.

[Adhesive Process of Composite Sheet]

8B is a diagram for explaining the step (PY1). In FIG. 8B, the semiconductor wafer W to which the composite sheet 140 which has the 1st sheet 10 and the protective layer 100B was stuck is described. It is preferable that the semiconductor wafer W in this embodiment is also a wafer obtained by passing through a backgrind process. This process (PY1) may be called a sticking process of a composite sheet.

As will be described later, in the step PY2, the semiconductor wafer W is divided into a plurality of semiconductor chips CP by dicing. In this embodiment, when dicing the semiconductor wafer W, in order to hold the semiconductor wafer W, the composite sheet 140 is affixed to the back surface W3. The semiconductor wafer W is affixed toward the protective layer 100B of the composite sheet 140 with the back surface W3. Since the protective layer 100B is formed in substantially the same shape as the back surface W3, it can cover the back surface W3. In the present embodiment, the protective layer 100B is sandwiched between the semiconductor wafer W and the first sheet 10 .

In this embodiment, the aspect in which the process is advanced in the state in which the circuit surface W1 is exposed is taken as an example and demonstrated. As an example of another aspect, for example, the protective layer 100B on the circuit surface W1 and The aspect of advancing a process in the state to which protective members, such as another protective sheet or a protective film, were stuck is mentioned.

In addition, the process of affixing the 1st sheet 10 and the protective layer 100B to the back surface W3 is not limited to the aspect using the laminated|stacked composite sheet 140, For example, the semiconductor wafer W After affixing the protective layer 100B to the back surface W3 of

[Dicing process]

8C is a diagram for explaining the step (PY2). The step (PY2) is sometimes referred to as a dicing step. 8C , a plurality of semiconductor chips CP held on the first sheet 10 are shown.

The semiconductor wafer W in the state in which the 1st sheet 10 and the protective layer 100B were stuck to the back surface W3 is divided into pieces by dicing, and the some semiconductor chip CP is formed.

In this embodiment, a cut is put from the circuit surface W1 side, the semiconductor wafer W is cut|disconnected, the protective layer 100B is cut|disconnected further, and a cut is made to reach|attain to the 1st adhesive layer 12. By this dicing, the protective layer 100B is also cut to the same size as the semiconductor chip CP.

The cutting depth at the time of dicing will not be specifically limited if it is a depth which can separate the semiconductor wafer W and the protective layer 100B into pieces. In this embodiment, although the aspect which does not put a cut to the 1st base material 11 is mentioned as an example and demonstrated, this invention is not limited to this aspect. For example, in another embodiment, from a viewpoint of cutting|disconnecting the semiconductor wafer W and the protective layer 100B more reliably, it cuts to the depth until it reaches the 1st base material 11 by dicing. may be formed. In addition, you may cut|disconnect the protective layer 100B, without making a cut reach to the 1st adhesive layer 12.

In the present embodiment, protection separated into pieces between the plurality of semiconductor chips CP and the first adhesive layer 12 of the first sheet 10 on the back surface W3 side of the semiconductor chip CP by the dicing process A laminate structure in which the layer 100B is interposed is obtained.

[Expand process]

9 is a diagram for explaining a step (PY3). The step (PY3) is sometimes referred to as an expand step. The state in which the 1st sheet|seat 10 was extended by FIG. 9 after a dicing process and the space|interval of the some semiconductor chip CP was widened is shown.

Also in the expand process in this embodiment, the method of extending the 1st sheet 10 is the same as that of 1st Embodiment. Also in this embodiment, since the space|interval D1 of several semiconductor chip CP depends on the size of the semiconductor chip CP, it is not restrict|limited in particular. It is preferable that the mutual space|interval D1 of the adjacent semiconductor chips CP is 200 micrometers or more. In addition, the upper limit in particular of the mutual space|interval of the said semiconductor chip CP is not restrict|limited. The upper limit of the mutual space|interval of the said semiconductor chip CP may be 6000 micrometers, for example.

[Transfer process, encapsulation process and other processes]

Also in this embodiment, you may implement a transfer process, a sealing process, and other processes (a rewiring layer formation process and a connection process with an external terminal electrode) similarly to 1st Embodiment or 2nd Embodiment.

(protective layer)

In one aspect of the protective layer 100B, it is preferably formed of an uncured, curable adhesive. In this case, by superposing an object (workpiece) such as a semiconductor wafer W on the protective layer 100B, and then curing the protective layer 100B, the cured product (protective film) of the protective layer 100B is applied to the object to be processed. It can adhere strongly and can form a protective film which has durability with respect to semiconductor devices, such as a semiconductor chip (CP).

It is preferable that the protective layer 100B has adhesiveness at normal temperature, or exhibits adhesiveness by heating. Thereby, when superposing processing objects, such as the semiconductor wafer W, on the protective layer 100B as mentioned above, both can be bonded together. Therefore, positioning can be reliably performed before hardening of the protective layer 100B.

The curable adhesive constituting the protective layer 100B having the above characteristics preferably contains a curable component and a binder polymer component. As the curable component, a thermosetting component, an energy ray curable component, or a mixture thereof can be used, but it is particularly preferable to use a thermosetting component. That is, the protective layer 100B is preferably composed of a thermosetting adhesive.

Examples of the thermosetting component include an epoxy resin, a phenol resin, a melamine resin, a urea resin, a polyester resin, a urethane resin, an acrylic resin, a polyimide resin, a benzoxazine resin, and a mixture thereof. Among these, as the thermosetting component, an epoxy resin, a phenol resin, and a mixture thereof are preferably used.

The epoxy resin has a property of forming a three-dimensional network and forming a strong film when heated. As such an epoxy resin, a conventionally well-known various epoxy resin is used. Usually, the epoxy resin of about 300-2000 number average molecular weights is preferable, and the epoxy resin of the number average molecular weight 300-500 is more preferable. Further, a blend type epoxy resin in which a liquid epoxy resin having a number average molecular weight of 330 to 400 and a solid epoxy resin having a number average molecular weight of 400 to 2500 (preferably, a number average molecular weight of 500 to 2000) are blended at room temperature. It is preferable to use Moreover, it is preferable that the epoxy equivalent of an epoxy resin is 50 g/eq - 5000 g/eq. In addition, the number average molecular weight of an epoxy resin can be calculated|required by the method using the GPC method.

Specific examples of such an epoxy resin include glycidyl ethers of phenols such as bisphenol A, bisphenol F, resorcinol, phenyl novolac, and cresol novolac; glycidyl ethers of alcohols such as butanediol, polyethylene glycol, and polypropylene glycol; glycidyl ethers of carboxylic acids such as phthalic acid, isophthalic acid, and tetrahydrophthalic acid; glycidyl-type or alkylglycidyl-type epoxy resins in which active hydrogen bonded to a nitrogen atom, such as aniline isocyanurate, is substituted with a glycidyl group; Vinylcyclohexane diepoxide, 3,4-epoxycyclohexylmethyl-3,4-dicyclohexanecarboxylate, 2- (3,4-epoxy) cyclohexyl-5,5-spiro (3,4-epoxy) ) cyclohexane-m-dioxane, the so-called alicyclic epoxide into which an epoxy is introduced by, for example, oxidation of a carbon-carbon double bond in a molecule, for example. In addition, for example, the epoxy resin which has at least 1 sort(s) of skeleton chosen from the group which consists of a biphenyl skeleton, a dicyclohexadiene skeleton, and a naphthalene skeleton can also be used.

Among the specific examples of these epoxy resins, bisphenol-based glycidyl-type epoxy resins, o-cresol novolac-type epoxy resins, and phenol novolac-type epoxy resins are preferably used as the epoxy resin. These epoxy resins can be used individually by 1 type or in combination of 2 or more type.

When using an epoxy resin, it is preferable to use together a thermally active latent epoxy resin hardening|curing agent as an adjuvant. The heat-activated latent epoxy resin curing agent is a curing agent of a type that does not react with the epoxy resin at room temperature, but is activated by heating at a certain temperature or higher and reacts with the epoxy resin. Examples of the activation method of the heat-activated latent epoxy resin curing agent include a method of generating active species (anions, cations) by a chemical reaction by heating; a method in which it is stably dispersed in an epoxy resin around room temperature and is compatible and dissolved with an epoxy resin at a high temperature to initiate a curing reaction; A method of initiating a curing reaction by eluting at a high temperature with a molecular sieve encapsulation type curing agent; A method using microcapsules and the like exist.

Specific examples of the thermally activated latent epoxy resin curing agent include various onium salts, dibasic acid dihydrazide compounds, dicyandiamide, amine adduct curing agents, and high melting point active hydrogen compounds such as imidazole compounds. These thermally active latent epoxy resin curing agents can be used individually by 1 type or in combination of 2 or more type. The heat-activated latent epoxy resin curing agent as described above is preferably 0.1 parts by weight or more and 20 parts by weight or less, more preferably 0.2 parts by weight or more and 10 parts by weight or less, further preferably 0.3 parts by weight or more, based on 100 parts by weight of the epoxy resin. It is used in a ratio of not less than 5 parts by weight and not more than 5 parts by weight.

As the phenolic resin, a condensate of phenols and aldehydes such as alkylphenol, polyhydric phenol, and naphthol is used without particular limitation. Specifically, for example, phenol novolak resin, o-cresol novolak resin, p-cresol novolak resin, t-butylphenol novolak resin, dicyclopentadiencresol resin, polyparavinyl phenol resin, bisphenol A type Novolac resins, or modified products thereof, etc. are used.

The phenolic hydroxyl group contained in these phenolic resin can easily add-react with the epoxy group of the said epoxy resin by heating, and can form the hardened|cured material with high impact resistance. For this reason, you may use together an epoxy resin and a phenolic resin as a thermosetting component.

The binder polymer component can provide an appropriate tack to the protective layer 100B. The weight average molecular weight (Mw) of the binder polymer is usually 50,000 or more and 2 million or less, preferably 100,000 or more and 1.5 million or less, and more preferably 200,000 or more and 1 million or less. When the molecular weight is too low, film formation of the protective layer 100B becomes insufficient, and when it is too high, compatibility with other components deteriorates, and consequently, uniform film formation is hindered. As such a binder polymer component, for example, at least one resin selected from the group consisting of an acrylic polymer, a polyester resin, a phenoxy resin, a urethane resin, a silicone resin and a rubber polymer is used, and an acrylic polymer is particularly preferably used. .

As an acrylic polymer, the (meth)acrylic acid ester copolymer which consists of structural units derived from a (meth)acrylic acid ester monomer and a (meth)acrylic acid derivative is mentioned, for example. Here, as the (meth)acrylic acid ester monomer, preferably (meth)acrylic acid alkylester having 1 to 18 carbon atoms in the alkyl group, for example, methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, (meth)butyl acrylate, etc. are used. Moreover, as a (meth)acrylic acid derivative, (meth)acrylic acid, (meth)acrylic-acid glycidyl, (meth)acrylic-acid hydroxyethyl, etc. are mentioned, for example.

Among the above, when a glycidyl group is introduced into an acrylic polymer using glycidyl methacrylate or the like as a structural unit, compatibility with the epoxy resin as the above-described thermosetting component is improved, and the protective layer 100B is cured of the glass. The transition temperature (Tg) is increased, and heat resistance is improved. Moreover, among the above, when a hydroxyl group is introduced into an acrylic polymer using hydroxyethyl acrylate etc. as a structural unit, the adhesiveness to an object to be processed and adhesive physical property can be controlled.

The weight average molecular weight (Mw) of the said polymer in the case of using an acrylic polymer as a binder polymer becomes like this. Preferably it is 100,000 or more, More preferably, it is 150,000 or more and 1 million or less. The glass transition temperature of the acrylic polymer is usually 20°C or less, preferably about -70°C to 0°C, and the acrylic polymer has tackiness at room temperature (23°C).

The mixing ratio of the thermosetting component and the binder polymer component is, with respect to 100 parts by weight of the binder polymer component, the thermosetting component, preferably 50 parts by weight or more and 1500 parts by weight or less, more preferably 70 parts by weight or more and 1000 parts by weight or less, further Preferably, it is preferable to mix|blend 80 weight part or more and 800 weight part or less. When a thermosetting component and a binder polymer component are mix|blended in such a ratio, an appropriate tack can be shown before hardening, a sticking operation can be performed stably, and after hardening, the protective film excellent in film strength is obtained.

It is preferable that the protective layer 100B contains at least any of a coloring agent and a filler, and it is especially preferable to contain both a coloring agent and a filler.

As the colorant, for example, a known colorant such as an inorganic pigment, an organic pigment, or an organic dye can be used. From the viewpoint of improving the controllability of the light transmittance, the colorant preferably contains an organic colorant. From the viewpoint of enhancing the chemical stability of the colorant (specifically, exemplified by difficulty in dissolution, difficulty in color transition, and little change over time), the colorant is preferably composed of a pigment.

Examples of the filler include silica such as crystalline silica, fused silica, and synthetic silica, and inorganic fillers such as alumina and glass balloons. Among these inorganic fillers, as the filler, silica is preferable, synthetic silica is more preferable, and synthetic silica of a type in which the α-ray source, which is a cause of malfunction of a semiconductor device, is removed as much as possible is preferable. As a shape of a filler, although a spherical shape, a needle shape, an irregular shape, etc. are mentioned, A spherical thing is preferable, and it is more preferable that it is a true spherical shape.

In addition, the protective layer 100B may contain a coupling agent. By containing the coupling agent, after curing of the protective layer 100B, it is possible to improve the adhesiveness and adhesion between the protective film and the object to be processed, without impairing the heat resistance of the protective film, and the water resistance (moisture and heat resistance) can be improved. . As the coupling agent, a silane coupling agent is preferable in terms of its versatility and cost advantages.

Silane coupling agents include γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-(methacryloxy Propyl) trimethoxysilane, γ-aminopropyltrimethoxysilane, N-6-(aminoethyl)-γ-aminopropyltrimethoxysilane, N-6-(aminoethyl)-γ-aminopropylmethyldiethoxy Silane, N-phenyl-γ-aminopropyltrimethoxysilane, γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, γ-mercaptopropylmethyldimethoxysilane, bis(3-tri Etoxysilylpropyl)tetrasulfane, methyltrimethoxysilane, methyltriethoxysilane, vinyltrimethoxysilane, vinyltriacetoxysilane, imidazolesilane, etc. are mentioned. As a silane coupling agent, 1 type of these silane coupling agents can be used individually or in mixture of 2 or more types.

The protective layer 100B may contain a crosslinking agent such as an organic polyvalent isocyanate compound, an organic polyvalent imine compound, or an organometallic chelate compound in order to adjust the cohesive force before curing. In addition, the protective layer 100B may contain an antistatic agent in order to suppress static electricity and improve the reliability of the chip. In addition, the protective layer 100B may contain flame retardants, such as a phosphoric acid compound, a bromine compound, and a phosphorus compound, in order to improve the flame-retardant performance of a protective film and to improve reliability as a package.

The thickness of the protective layer 100B is not particularly limited. When the protective layer 100B is cured and used as a protective film, in order to effectively exhibit the function as a protective film, the protective layer 100B preferably has a thickness of 3 µm or more and 300 µm or less, and 5 µm or more and 200 µm or less. It is more preferable, and it is still more preferable that it is 7 micrometers or more and 100 micrometers or less.

[Effect concerning this embodiment]

According to the expand method according to the present embodiment, when the first sheet 10 is stretched, the back surface W3 of the semiconductor chip CP is in contact with the first pressure-sensitive adhesive layer 12 of the first sheet 10 and there is not In each of the semiconductor chips CP, the protective layer 100B separated into pieces in the dicing step is interposed between the back surface W3 and the first pressure-sensitive adhesive layer 12, so that the first sheet 10 is stretched. Even if it is made, the protective layer 100B in contact with the back surface W3 is not stretched. As a result, according to the expand method according to the present embodiment, pool residual can be suppressed.

In addition, in this embodiment, the protective layer 100B has substantially the same shape as the back surface W3 of the semiconductor wafer W, and a semiconductor chip formed from the end side of the semiconductor wafer W by dicing ( Since the protective layer 100B is also divided into pieces also on the back surface W3 of the CP) (the semiconductor chip on the outer peripheral side), the interval between the semiconductor chips CP can be sufficiently extended.

In addition, in this embodiment, at the time of a dicing process, the semiconductor wafer W is not supported by the dicing sheet, but by the composite sheet 140 which has the 1st sheet 10 and the protective layer 100B. . Therefore, in order to form a layer (protective layer 100B in this embodiment) for protecting the back surface W3 of the semiconductor chip CP after dicing, from the adhesive sheet used in the dicing process to another adhesive sheet. It is not necessary to perform a replacement process, and a process can be simplified.

Moreover, before implementing an expand process, it is not necessary to replace with the adhesive sheet for expand processes from the adhesive sheet used when performing a dicing process.

Therefore, according to the expand method according to the present embodiment, it is possible to suppress the pool residual while simplifying the process and sufficiently extending the distance between the chips compared to the prior art.

Furthermore, it is possible to provide a method for manufacturing a semiconductor device including the expand method according to the present embodiment.

[Modification of embodiment]

This invention is not limited at all to embodiment mentioned above. This invention includes the aspect etc. which modified the above-mentioned embodiment in the range which can achieve the objective of this invention.

For example, a circuit in a semiconductor wafer or a semiconductor chip is not limited to the illustrated arrangement, shape, or the like. A connection structure with an external terminal electrode in a semiconductor package, etc. are not limited to the aspect demonstrated by the above-mentioned embodiment, either. In the above-described embodiment, an aspect of manufacturing the FO-WLP type semiconductor package has been described as an example, but the present invention is also applicable to the aspect of manufacturing other semiconductor packages such as a fan-shaped WLP.

In the above-described FO-WLP manufacturing method, some steps may be changed or some steps may be omitted.

The dicing in the dicing process may be performed by irradiating a laser beam to the semiconductor wafer instead of using the above-described cutting means. For example, a semiconductor wafer may be completely divided by irradiation of a laser beam, and you may separate it into several semiconductor chips. Moreover, in these methods, you may perform irradiation of a laser beam from either side of the semiconductor wafer W.

In the second embodiment, the composite sheet 130 has a protective layer 100A and a third sheet 30, or the protective layer 100A is a third pressure-sensitive adhesive layer, and the third sheet 30 is a third Although the aspect which is a base material was mentioned as an example and demonstrated, this invention is not limited to these aspects. For example, the adhesive sheet which has a peeling layer between a 3rd adhesive layer and a 3rd base material may be sufficient. It is preferable that a release layer is comprised using the same material as the release sheet in description of 1st Embodiment.

Example

Hereinafter, the present invention will be described in more detail by way of Examples. The present invention is by no means limited to these Examples.

(Production of adhesive sheet)

[Example 1]

62 parts by mass of butyl acrylate (BA), 10 parts by mass of methyl methacrylate (MMA), and 28 parts by mass of 2-hydroxyethyl acrylate (2HEA) were copolymerized to obtain an acrylic copolymer. To this acrylic copolymer, a solution of a resin (acrylic A) to which 2-isocyanate ethyl methacrylate (manufactured by Showa Denko Co., Ltd., product name "Karens MOI" (registered trademark)) was added (adhesive main agent, solid content 35.0 mass %) ) was prepared. The addition ratio was 90 mol% of 2-isocyanate ethyl methacrylate with respect to 100 mol% of 2HEA of the acrylic copolymer.

The weight average molecular weight (Mw) of the obtained resin (acryl A) was 600,000, and Mw/Mn was 4.5. The weight average molecular weight Mw and number average molecular weight Mn in terms of standard polystyrene were measured by gel permeation chromatography (GPC) method, and molecular weight distribution (Mw/Mn) was calculated|required from each measured value.

In this adhesive main ingredient, UV resin A (10 functional urethane acrylate, manufactured by Mitsubishi Chemical Co., Ltd., product name "UV-5806", Mw = 1740, including a photoinitiator), and a tolylene diisocyanate type crosslinking agent as a crosslinking agent (Japanese polyurethane) Industrial Co., Ltd. product name "Colonate L") was added. 50 mass parts of UV resin A was added with respect to 100 mass parts of solid content in an adhesive main body, and 0.2 mass parts of crosslinking agents were added. After addition, it stirred for 30 minutes and prepared adhesive composition A1.

Next, the prepared solution of the pressure-sensitive adhesive composition A1 was applied to a polyethylene terephthalate (PET)-based release film (manufactured by Lintec Co., Ltd., product name "SP-PET381031", thickness 38 µm) and dried, and a pressure-sensitive adhesive layer having a thickness of 40 µm was applied on the release film. formed in

After bonding a polyester-based polyurethane elastomer sheet (manufactured by Seadam Co., Ltd., product name "Higures DUS202", thickness 100 µm) to the pressure-sensitive adhesive layer as a base material, an unnecessary portion of the end portion in the width direction is cut off and adhered A sheet SA1 was prepared.

(Method of measuring chip spacing)

The adhesive sheet obtained in Example 1 was cut|disconnected to 210 mm x 210 mm, and the sheet|seat for a test was obtained. At this time, it cut|disconnected so that each side of the sheet|seat after cutting might be parallel to or perpendicular|vertical to the MD direction of the base material in an adhesive sheet.

The semiconductor chip affixed to the adhesive sheet was prepared by the procedure shown next. A sheet as a protective layer (in the Examples, may be referred to as a protective sheet) was adhered to a 6-inch silicon wafer. As the protective sheet, "E-3125KL" (product name) manufactured by Lintec Co., Ltd. was used. Next, the 6-inch silicon wafer was diced from the protective sheet side, and a total of 25 chips were cut out so that there were 5 rows of 3 mm x 3 mm chips in the X-axis direction and 5 rows in the Y-axis direction. A diced protective sheet was adhered to each of the chips.

The release film of the test sheet was peeled, and the protective sheet side of the 25 chip|tip cut out as mentioned above in total was affixed to the center part of the exposed adhesive layer. At this time, the chips were arranged in 5 rows in the X-axis direction and 5 rows in the Y-axis direction.

Next, the test sheet to which the chip|tip was affixed was installed in the expand apparatus (separation apparatus) which can be biaxially stretched. 10 is a plan view for explaining the expand device 400 . 10 , the X axis and the Y axis are in a mutually orthogonal relationship, the positive direction of the X axis is the +X axis direction, the negative direction of the X axis is the -X axis direction, the positive direction of the Y axis is the +Y axis direction, and the Y axis is the Y axis direction. The negative direction of the axis is the -Y axis direction. The test sheet 500 was installed in the expand device 400 so that each side might be parallel to the X-axis or the Y-axis. As a result, the MD direction of the substrate in the test sheet 500 is parallel to the X axis or the Y axis. In addition, in FIG. 10, the chip|tip is abbreviate|omitted.

As shown in FIG. 10 , the expand device 400 includes five holding means 401 (a total of 20 holding means ( 401)) is provided. Of the five holding means 401 in each direction, the holding means 401A are located at both ends, the holding means 401C are located in the center, and the holding means 401B are the holding means 401A and the holding means 401C. ) is located between Each side of the test sheet 500 was held by these holding means 401 .

Here, as shown in FIG. 10, one side of the test sheet 500 is 210 mm. In addition, the space|interval between the holding means 401 comrades in each side is 40 mm. In addition, the interval between the end (apex of the sheet) on one side of the test sheet 500 and the holding means 401A on the side and closest to the end is 25 mm.

Then, a plurality of tension applying means (not shown) corresponding to each of the holding means 401 was driven to move the holding means 401 independently of each other. Four sides of the test sheet were fixed with a holding jig, and the test sheet was expanded at a speed of 5 mm/s in the X-axis direction and the Y-axis direction, respectively, with an extension amount of 200 mm. Then, the expanded state of the sheet|seat 500 for a test was hold|maintained by the ring frame.

While the extended state was maintained, the distance between each chip was measured with a digital microscope, and the average value of the distance between each chip|tip was made into the chip space|interval.

When the chip interval was 1800 µm or more, it was determined as pass "A", and when the chip interval was less than 1800 µm, it was determined as a failure "B".

(Method for measuring chip alignment)

The deviation from the center line of the adjacent chips in the X-axis and Y-axis directions of the workpiece for which the chip spacing was measured was measured.

A schematic diagram of a specific measurement method is shown in FIG. 11 .

One row in which five chips were arranged in the X-axis direction was selected, and the distance Dy between the uppermost end of the chip and the lowermost end of the chip was measured with a digital microscope in the row. The shift rate in the Y-axis direction was calculated based on the following formula (Equation 3). Sy is the chip size in the Y-axis direction, and in the present Example, it was set to 3 mm.

Displacement rate in the Y-axis direction [%] = [(Dy - Sy)/2]/Sy × 100 … (Equation 3)

For the other four rows in which five chips were arranged in the X-axis direction, the deviation in the Y-axis direction was calculated in the same manner.

One row in which five chips were arranged in the Y-axis direction was selected, and the distance Dx between the leftmost edge of the chip and the rightmost edge of the chip was measured with a digital microscope in the row. The shift rate in the X-axis direction was calculated based on the following formula (Equation 4). Sx is the chip size in the X-axis direction, and in the present Example, it was set to 3 mm.

Deviation rate in the X-axis direction [%] = [(Dx - Sx)/2]/Sx × 100 … (Equation 4)

For the other four rows in which five chips were arranged in the Y-axis direction, the deviation rate in the X-axis direction was calculated in the same manner.

In the formulas (Equation 3) and (Equation 4), dividing by 2 is for expressing the maximum distance shifted from the predetermined position of the chip after expansion as an absolute value.

In all the rows in the X-axis direction and the Y-axis direction (10 rows in total), a case where the deviation rate is less than ±10% is judged as a pass “A”, and if it is ±10% or more in one or more rows, it is a fail “B” judged

(Method for evaluating grass residue)

After expanding under the conditions described in the above-described method for measuring the chip spacing, using an ultraviolet irradiation device (“RAD-2000 m/12” manufactured by Lintec Co., Ltd.), the side on which the chip of the pressure-sensitive adhesive sheet according to Example 1 is mounted and was irradiated with ultraviolet rays from the opposite side under conditions of an illuminance of 220 mW/cm 2 and a light quantity of 460 mJ/cm 2 . After UV irradiation, the chip was held on an adsorption table, and the adhesive sheet was peeled off. After peeling the adhesive sheet, the chip surface to which the adhesive sheet was stuck was observed with the optical microscope. The case where no glue residue was observed on the chip surface was judged as a pass "A", and the case where the glue residue was observed was judged as a fail "B".

As a result of expanding using the pressure-sensitive adhesive sheet according to Example 1, the evaluation result of the chip spacing was a pass "A" determination, and the evaluation result of the chip alignment property was a pass "A" determination.

When the adhesive sheet was expanded by interposing a protective sheet between the chip and the adhesive sheet according to the example, the evaluation result of the glue residue on the surface of the chip was a pass "A" judgment.

10: first sheet
100, 100A, 100B: protective layer
11: first base material
12: first pressure-sensitive adhesive layer
130, 140: composite sheet
20: second adhesive sheet
W: semiconductor wafer (object to be processed)
W1: circuit surface (first semiconductor device surface)
W3: back side (second semiconductor device side)

Claims (12)

a step of stretching a first sheet to which a plurality of semiconductor devices are adhered, thereby widening an interval between the plurality of semiconductor devices;
each of the plurality of semiconductor devices has a first semiconductor device surface and a second semiconductor device surface opposite to the first semiconductor device surface;
each of the plurality of semiconductor devices includes a protective layer and is adhered between the first semiconductor device surface or the second semiconductor device surface and the first sheet;
How to expand. The method of claim 1,
attaching the plurality of semiconductor devices to the first sheet after the protective layer is formed on the surface of the first semiconductor device;
How to expand. 3. The method according to claim 1 or 2,
obtaining the plurality of semiconductor devices by dicing the object to be processed;
How to expand. 4. The method of claim 3,
The protective layer is formed on the object to be processed,
dicing the object to be processed and the protective layer to obtain the plurality of semiconductor devices;
How to expand. 5. The method of claim 4,
The object to be processed on which the protective layer is formed is adhered to the second pressure-sensitive adhesive layer of a second pressure-sensitive adhesive sheet having a second pressure-sensitive adhesive layer and a second substrate;
dicing the protective layer and the object to be processed to obtain the plurality of semiconductor devices;
Adhering the first sheet to the protective layer after dicing,
How to expand. 6. The method of claim 5,
After attaching the first sheet to the protective layer after dicing, peeling the second adhesive sheet,
How to expand. 5. The method according to claim 3 or 4,
adhering the object to be processed to the protective layer of a composite sheet having the protective layer and a third sheet;
dicing the object to be processed and the protective layer to obtain the plurality of semiconductor devices;
peeling the third sheet from the protective layer,
How to expand. 4. The method of claim 3,
The protective layer and the first sheet are laminated in advance,
supporting the object to be processed with the protective layer,
dicing the object to be processed and the protective layer to obtain the plurality of semiconductor devices;
How to expand. 9. The method according to any one of claims 3 to 8,
The processing object is a semiconductor wafer,
How to expand. 10. The method according to any one of claims 1 to 9,
The first sheet is an expand sheet,
How to expand. 11. The method according to any one of claims 1 to 10,
wherein the first semiconductor device surface has a circuit;
How to expand. A method for manufacturing a semiconductor device comprising the expand method according to any one of claims 1 to 11.

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