JP6578989B2 - 光半導体電極 - Google Patents

光半導体電極 Download PDF

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Publication number
JP6578989B2
JP6578989B2 JP2016033893A JP2016033893A JP6578989B2 JP 6578989 B2 JP6578989 B2 JP 6578989B2 JP 2016033893 A JP2016033893 A JP 2016033893A JP 2016033893 A JP2016033893 A JP 2016033893A JP 6578989 B2 JP6578989 B2 JP 6578989B2
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Japan
Prior art keywords
titanium oxide
semiconductor electrode
oxide layer
oxynitride film
conductive titanium
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JP2016033893A
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English (en)
Japanese (ja)
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JP2017201045A5 (enExample
JP2017201045A (ja
Inventor
透 中村
透 中村
諒介 菊地
諒介 菊地
英昭 村瀬
英昭 村瀬
田村　聡
聡 田村
羽藤　一仁
一仁 羽藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP2016033893A priority Critical patent/JP6578989B2/ja
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Publication of JP2017201045A5 publication Critical patent/JP2017201045A5/ja
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis

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  • Inorganic Compounds Of Heavy Metals (AREA)
  • Catalysts (AREA)
  • Electrodes For Compound Or Non-Metal Manufacture (AREA)
  • Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
  • Physical Vapour Deposition (AREA)
JP2016033893A 2016-02-25 2016-02-25 光半導体電極 Active JP6578989B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2016033893A JP6578989B2 (ja) 2016-02-25 2016-02-25 光半導体電極

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016033893A JP6578989B2 (ja) 2016-02-25 2016-02-25 光半導体電極

Publications (3)

Publication Number Publication Date
JP2017201045A JP2017201045A (ja) 2017-11-09
JP2017201045A5 JP2017201045A5 (enExample) 2018-08-16
JP6578989B2 true JP6578989B2 (ja) 2019-09-25

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JP2016033893A Active JP6578989B2 (ja) 2016-02-25 2016-02-25 光半導体電極

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JP (1) JP6578989B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10162278B2 (en) * 2017-02-28 2018-12-25 Canon Kabushiki Kaisha Electrophotographic photosensitive member, process cartridge and electrophotographic apparatus

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011204667A (ja) * 2010-03-04 2011-10-13 Sumitomo Chemical Co Ltd 酸化チタン系透明導電性基板の製造方法
JP5165155B2 (ja) * 2010-12-28 2013-03-21 パナソニック株式会社 光半導体およびその製造方法、並びに、光半導体デバイス、光触媒、水素生成デバイスおよびエネルギーシステム
CN103153868B (zh) * 2011-08-02 2015-07-08 松下电器产业株式会社 NbON膜及NbON膜的制造方法、以及氢生成设备及具备它的能量系统
JP2015227503A (ja) * 2014-05-09 2015-12-17 パナソニックＩｐマネジメント株式会社 水を分解することによって水素を発生させる方法、ならびにそのために用いられる光電気化学セルおよび半導体電極

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