JP6577130B2 - 収納部が強化された基板容器 - Google Patents
収納部が強化された基板容器 Download PDFInfo
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- JP6577130B2 JP6577130B2 JP2018501211A JP2018501211A JP6577130B2 JP 6577130 B2 JP6577130 B2 JP 6577130B2 JP 2018501211 A JP2018501211 A JP 2018501211A JP 2018501211 A JP2018501211 A JP 2018501211A JP 6577130 B2 JP6577130 B2 JP 6577130B2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6732—Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67366—Closed carriers characterised by materials, roughness, coatings or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67379—Closed carriers characterised by coupling elements, kinematic members, handles or elements to be externally gripped
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67383—Closed carriers characterised by substrate supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67386—Closed carriers characterised by the construction of the closed carrier
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Packaging Frangible Articles (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Containers Having Bodies Formed In One Piece (AREA)
Description
本出願は、2015年7月13日に出願された米国仮特許出願第62/192,011号からの利益を主張し、その開示は、参照によりその全体が本明細書に援用される。
第1の試験は、射出成形されたマグネシウム試料の透過特性を、水素ガスおよび標準的なマノメータ技術を用いて判定するために行われた。第2の試験では、EBM材料として知られているEntegris, Inc.の熱可塑性の独自樹脂で、水素と酸素の透過抵抗を評価した。
ガスは、まず溶解し、次に拡散することによって、均質材料を透過する。透過物の下流圧の上昇(Δρι)は、標準的な温度および圧力(STP)における同等の体積のガス(V)に変換することができ、Tを測定温度、Vsを透過装置の下流側の体積、T0を標準温度(32°F=273K)、Δρ0を標準圧力(=1気圧または76cmHg)としたとき、
V=(Δρι/Δρ0)(T0/T)Vs
で表される。定常状態条件下で、時間(t)で膜を透過するガスの体積(V)は、膜厚(B)、膜面積(A)、およびかけられる上流圧(Δρ)(4,5)だけでなく、透過係数(P)にも依存し、
V=P・A・Δρ・t/Bとなる。
tb=B2/6Dとなる。
S=P/Dとして計算される。
透過速度は、かけられた上流圧に比例した。したがって、2種の圧力からのデータは、P、D、およびSに一意の値を与えた。以下の表1は、マグネシウム試料の物質移動係数をまとめたものである。その全体平均は、P=(0.056±0.001)×10−10cm3・cm/cm2・s・cmHg、D=(5.66±0.53)×10−8cm2/s、S=(0.098±0.010)×10−3cm3/cm3・cmHgである。
第2の試験では、水素と酸素の透過抵抗を、高性能の独自ポリマーの圧縮成形で評価した。試料は、280℃(536°F)の温度で、PHI Bench Design, Hydraulic Compression Pressを用いて圧縮成形した。特定の量の樹脂を様々な厚さの膜のために計量し、真ちゅうプラークモールド(plaque mold)の中心に注ぎ、その後薄いアルミニウムシートとPI膜との間に挟み込んだ。挟み込まれた状態のものを、プレスの、予熱した下側プラテン上に置き、上側プラテンとの「キス」位置にし、2分間保持した後、20,000ポンドの荷重を1分間加えた。その後、それらを2つのアルミニウムブロック(7mil)の間に置くか、またはそれらをプレスから取り出し、試料を室温(12mil)でゆっくりと冷却することによって、試料を冷却した。
ガスは、まず溶解し、次に拡散することによって、均質材料を透過する。透過物の下流圧の上昇(Δρι)は、標準的な温度および圧力(STP)における同等の体積のガス(V)に変換することができ、Tを測定温度、Vsを透過装置の下流側の体積、Toを標準温度(32°F=273K)、Δρ0を標準圧力(=1気圧または76cmHg)としたとき、
V=(Δρι/Δρ0)(T0/T)Vs
で表される。定常状態条件下で、時間(t)で膜を透過するガスの体積(V)は、膜厚(B)、膜面積(A)、およびかけられる上流圧(Δρ)だけでなく、透過係数(P)にも依存し、
V=P・A・Δρ・t/Bとなる。
tb=B2/6Dとなる。
S=P/Dとして計算される。
EBM独自のポリマーの熱的性質を、膜の2種の厚さおよび樹脂について測定した。平均値を表3に示す。これらの値は、ほぼ仕様と一致している。
上記の試験および測定された透過係数、拡散係数、および溶解係数を考慮すると、射出成形されたマグネシウム合金は熱可塑性材料よりもはるかに不透過性である。この射出成形されたマグネシウム合金の透過速度は、ポリカーボネートより2桁小さい。
・複数の半導体ウエハを移送するように構成された構造要素を有するウエハ容器を形成する方法であって、上記のウエハキャリアが、容器シェル部分と、前部開口部と、前部開口部に封止可能に挿入可能かつ取り外し可能なドアとを有し、上記の方法が、ある量のマグネシウム合金材料を準備することと、上記の量のマグネシウム合金材料を押出機内に入れることと、上記の量のマグネシウム合金を加熱し、せん断を加えてスラリーを形成することと、上記のスラリーを、上記の容器シェル部分および上記のドア部分のうち少なくとも1つの構成要素を形成する金型に射出することと、ドアおよび容器シェル部分を組み立ててウエハ容器にすることとを含む。
・耐腐食性のために、上記の構成部品のうち、少なくとも1つをコーティングすることをさらに含む上記方法。上記のコーティングが化成皮膜加工である上記方法。
・300mmのウエハおよび450mmのウエハのうち、1つを保持するようにウエハ容器を構成することをさらに含む上記の方法のいずれか。
・上記のウエハ容器の重心を、上記のウエハ容器に収容された上記のウエハの軸と実質的に一致するように位置づけることをさらに含む上記のいずれかの方法。
・上記のウエハキャリアの重心が、中心に位置する、上記のいずれかの方法。
・マグネシウムチクソモールド材料を98重量%以上の濃度に維持することをさらに含む上記のいずれかの方法。
1.射出成形された構成部品で形成された基板容器であって、上記の構成部品が、容器部分およびドア部分を備え、上記の容器部分が、最も厚い壁部分と最も薄い壁部分との間で少なくとも40%変化する壁厚を有する、基板容器。
2.前部開口部と、封止可能に挿入可能かつ前記容器部分から取り外し可能なドアとを備える基板容器であって、容器シェル部分が、成形されたポリマー材料を含み、上記のドアがマグネシウムチクソモールド材料を含む、基板容器。
3.1.0×10−7torrの真空で基板エンクロージャ環境を維持する方法であって、マグネシウムを含むシェル部分と、マグネシウムを含み上記のシェル部分との間の界面にシールを有するドア部分とを備える容器を提供することと、内部雰囲気を1.0×10−7torrの真空に下げることとを含む方法。
4.閉じた後6〜12時間、相対湿度5%未満に基板エンクロージャ環境を維持する方法であって、マグネシウムを含むシェル部分と、上記のシェル部分との間の界面にシールを有するチクソモールドされたマグネシウムで形成されたドア部分とを備える容器を提供することを含む方法。
5.6〜12時間、100ppm未満の低酸素(O2)レベルに基板エンクロージャ環境を維持する方法であって、チクソモールドされたマグネシウムを含むシェル部分と、上記のシェル部分との間の界面にシールを有するチクソモールドされたマグネシウムを含むドア部分とを備える容器を提供することを含む方法。
6.複数の射出成形されたポリマー基板構成部品を提供することと、上記の容器収納部構成部品を上記の複数の射出成形されたポリマー構成部品と共に組み立てて基板容器にすることとをさらに含む、番号3〜5のいずれかが付された段落の方法。
本出願のすべてのセクションにおける上記文献は、あらゆる目的のためにその全体が参照により本明細書に援用される。
Claims (11)
- 収納部部分を備える基板容器であって、前記基板容器の前記収納部部分が、マグネシウム合金で形成され、前記収納部部分が、前記マグネシウム合金の表面上のコーティングを有し、前記収納部部分が、さらに前記マグネシウム合金で形成されたウェハ支持体を有する、基板容器。
- 前記基板容器の少なくとも一部分が、射出成形されたポリマー組成物で形成される、請求項1に記載の基板容器。
- 前記基板容器が、前記マグネシウム合金の、コーティングされた表面に結合された構成部品をさらに備える、請求項1に記載の基板容器。
- 前記コーティングが化成皮膜である、請求項1に記載の基板容器。
- 前記コーティングの厚さが10−4〜10−5インチである、請求項1に記載の基板容器。
- 前記化成皮膜が、Alodine 5200(非クロム酸塩)、Alodine 5900(3価クロメート)、Metalast TCP−HF、NH35(六価クロメート)、Tagnite、Anomag、およびKeroniteからなる群から選択される、請求項4に記載の基板容器。
- 前記収納部部分が、複数の角部分および複数の壁部分を含み、前記壁部分が、前記複数の角部分からはずれた部分を有し、前記はずれた部分が、前記角部分のうちの1つにおける壁厚の60%以下の壁厚を有する、請求項1に記載の基板容器。
- 少なくとも1つの壁部分が、少なくとも1つの前記角部分の、ある領域の厚さより少なくとも30パーセント小さい薄肉部分を有する、請求項7に記載の基板容器。
- ドアをさらに備え、前記ドアがマグネシウム合金で形成されている、請求項1に記載の基板容器。
- 収納部部分を備える基板容器であって、前記基板容器の前記収納部部分が、マグネシウム合金で形成され、前記収納部部分が、前記マグネシウム合金の表面上のコーティングを有し、前記収納部部分が、さらにウェハ支持体を有し、前記基板容器が、前記マグネシウム合金の、コーティングされた表面に結合された構成部品をさらに備える、基板容器。
- 基板容器の収納部を形成する方法であって、
マグネシウム合金から、基板容器の収納部をチクソモールドすること、及び
前記収納部の表面をコーティングすること
を含み、前記基板容器が、ウェハ支持体を備える、基板容器の収納部を形成する方法。
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