JP6572378B2 - リソグラフィ装置におけるパターニングデバイス冷却システム - Google Patents

リソグラフィ装置におけるパターニングデバイス冷却システム Download PDF

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Publication number
JP6572378B2
JP6572378B2 JP2018501873A JP2018501873A JP6572378B2 JP 6572378 B2 JP6572378 B2 JP 6572378B2 JP 2018501873 A JP2018501873 A JP 2018501873A JP 2018501873 A JP2018501873 A JP 2018501873A JP 6572378 B2 JP6572378 B2 JP 6572378B2
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Japan
Prior art keywords
patterning device
temperature
lithographic apparatus
sensor
parameter
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JP2018501873A
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English (en)
Japanese (ja)
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JP2018520387A (ja
JP2018520387A5 (enExample
Inventor
ボクホーフェン、ローレンティウス、ヨハネス、アドリアヌス ファン
ボクホーフェン、ローレンティウス、ヨハネス、アドリアヌス ファン
ワード、クリストファー、チャールズ
デル ハーフ、マルク、レオン ファン
デル ハーフ、マルク、レオン ファン
クネン、ヨハン、ハートルディス、コーネリス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Holding NV
ASML Netherlands BV
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ASML Holding NV
ASML Netherlands BV
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Publication of JP2018520387A publication Critical patent/JP2018520387A/ja
Publication of JP2018520387A5 publication Critical patent/JP2018520387A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature

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  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2018501873A 2015-07-14 2016-06-17 リソグラフィ装置におけるパターニングデバイス冷却システム Active JP6572378B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562192347P 2015-07-14 2015-07-14
US62/192,347 2015-07-14
PCT/EP2016/063984 WO2017008996A1 (en) 2015-07-14 2016-06-17 Patterning device cooling systems in a lithographic apparatus

Publications (3)

Publication Number Publication Date
JP2018520387A JP2018520387A (ja) 2018-07-26
JP2018520387A5 JP2018520387A5 (enExample) 2019-09-05
JP6572378B2 true JP6572378B2 (ja) 2019-09-11

Family

ID=56132956

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018501873A Active JP6572378B2 (ja) 2015-07-14 2016-06-17 リソグラフィ装置におけるパターニングデバイス冷却システム

Country Status (6)

Country Link
US (1) US10281830B2 (enExample)
JP (1) JP6572378B2 (enExample)
CN (1) CN107949810B (enExample)
NL (1) NL2016984A (enExample)
TW (1) TWI620035B (enExample)
WO (1) WO2017008996A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107219729B (zh) * 2017-07-17 2018-10-26 深圳市华星光电技术有限公司 曝光机及遮光叶片
WO2020064240A1 (en) * 2018-09-27 2020-04-02 Asml Netherlands B.V. A level sensor and a lithographic apparatus incorporating a level sensor
JP7227834B2 (ja) * 2019-04-16 2023-02-22 キヤノン株式会社 基板処理装置及び物品の製造方法
US12169369B2 (en) * 2021-08-30 2024-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Storage for extreme ultraviolet light lithography

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5581324A (en) * 1993-06-10 1996-12-03 Nikon Corporation Thermal distortion compensated projection exposure method and apparatus for manufacturing semiconductors
JPH06349700A (ja) 1993-06-10 1994-12-22 Nikon Corp 投影露光装置
JP3316983B2 (ja) 1993-11-26 2002-08-19 株式会社ニコン 投影露光方法及び装置、並びに素子製造方法
JP3622867B2 (ja) 1995-04-13 2005-02-23 株式会社ニコン 露光装置及び露光方法
JPH0992613A (ja) * 1995-09-21 1997-04-04 Nikon Corp 温調装置及び走査型露光装置
JPH10247617A (ja) * 1997-03-03 1998-09-14 Nikon Corp 投影露光方法及び投影露光装置
JPH10289874A (ja) 1997-04-16 1998-10-27 Nikon Corp 露光装置
JP2002198277A (ja) 2000-12-22 2002-07-12 Canon Inc 補正装置、露光装置、デバイス製造方法及びデバイス
JP2002359178A (ja) * 2001-05-31 2002-12-13 Canon Inc 投影露光方法および投影露光装置
JP2003222991A (ja) * 2002-01-29 2003-08-08 Canon Inc レチクル及びレチクル製造装置及びレチクル検査装置及びレチクル保管容器及び露光装置
KR100707307B1 (ko) * 2005-05-10 2007-04-12 삼성전자주식회사 레티클의 열적 변형을 방지할 수 있는 노광 설비 및 노광방법
CN101216667A (zh) * 2007-12-28 2008-07-09 上海宏力半导体制造有限公司 一种可提高空间成像套刻检验精准度的光刻方法
US7935546B2 (en) * 2008-02-06 2011-05-03 International Business Machines Corporation Method and apparatus for measurement and control of photomask to substrate alignment
CN101989037A (zh) * 2009-08-07 2011-03-23 中芯国际集成电路制造(上海)有限公司 降低光罩上沉淀物雾状缺陷的方法
JP2013502063A (ja) 2009-08-11 2013-01-17 ズス・マイクロテック・リソグラフィ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング マスクの大きさを一定に維持するための方法および装置
CN102243441B (zh) * 2010-05-12 2015-06-17 上海微电子装备有限公司 温度控制装置、应用其的投影曝光装置及温度控制方法
NL2007615A (en) * 2010-11-30 2012-05-31 Asml Netherlands Bv Method of operating a patterning device and lithographic apparatus.
WO2014005780A1 (en) 2012-07-06 2014-01-09 Asml Netherlands B.V. A lithographic apparatus
US9632433B2 (en) 2012-10-31 2017-04-25 Asml Holding N.V. Patterning device support, lithographic apparatus, and method of controlling patterning device temperature
KR101963012B1 (ko) * 2014-01-16 2019-03-27 가부시키가이샤 니콘 노광 장치 및 노광 방법, 그리고 디바이스 제조 방법
CN104611669B (zh) * 2015-03-04 2017-05-10 信利（惠州）智能显示有限公司 一种掩膜板的制作方法

Also Published As

Publication number Publication date
TWI620035B (zh) 2018-04-01
WO2017008996A1 (en) 2017-01-19
TW201712436A (zh) 2017-04-01
US20180196360A1 (en) 2018-07-12
CN107949810A (zh) 2018-04-20
US10281830B2 (en) 2019-05-07
CN107949810B (zh) 2020-12-11
JP2018520387A (ja) 2018-07-26
NL2016984A (en) 2017-01-19

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