JP6567705B2 - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
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- JP6567705B2 JP6567705B2 JP2018004924A JP2018004924A JP6567705B2 JP 6567705 B2 JP6567705 B2 JP 6567705B2 JP 2018004924 A JP2018004924 A JP 2018004924A JP 2018004924 A JP2018004924 A JP 2018004924A JP 6567705 B2 JP6567705 B2 JP 6567705B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 143
- 239000004065 semiconductor Substances 0.000 claims description 84
- 239000000758 substrate Substances 0.000 claims description 79
- 238000000151 deposition Methods 0.000 claims description 74
- 230000008021 deposition Effects 0.000 claims description 54
- 239000012535 impurity Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 230000007547 defect Effects 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 229910021419 crystalline silicon Inorganic materials 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000000969 carrier Substances 0.000 description 6
- 238000010790 dilution Methods 0.000 description 6
- 239000012895 dilution Substances 0.000 description 6
- 150000002431 hydrogen Chemical class 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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Description
Claims (5)
- 半導体基板の第1面上に第1の真性非晶質シリコン層を蒸着し、前記半導体基板の第2面上に第2の真性非晶質シリコン層を蒸着するステップと、
第1の導電型の不純物を含み、前記第1の真性非晶質シリコン層を間において前記半導体基板とp−n接合を形成する非晶質シリコン層を前記第1の真性非晶質シリコン層の上に蒸着して第1の導電型領域を形成する第1の導電型領域形成ステップと、
前記第1の導電型と反対の導電型である第2の導電型の不純物を含む真性非晶質シリコン層を前記第2の真性非晶質シリコン層の上に蒸着して第2の導電型領域を形成する第2の導電型領域形成ステップと、
前記第1、第2の導電型領域の各々に電気的に接続される電極を形成するステップと、
を含み、
前記第1、第2の真性非晶質シリコン層の各々が前記半導体基板の表面に0.5nm/sec〜2nm/secの蒸着速度で蒸着され、
前記第1の真性非晶質シリコン層の蒸着速度は、前記第2の真性非晶質シリコン層の蒸着速度より速い、太陽電池の製造方法。 - 前記真性非晶質シリコン層を蒸着する装置のパワーは、60mW/cm2〜150mW/cm2である、請求項1に記載の太陽電池の製造方法。
- 前記真性非晶質シリコン層を蒸着するためのシラン(SiH4)ガス量[Sccm]に対する水素(H2)ガス量[Sccm]の割合は、1:1〜100である、請求項1に記載の太陽電池の製造方法。
- 前記真性非晶質シリコン層を蒸着するステップの工程温度は、100℃〜200℃である、請求項1に記載の太陽電池の製造方法。
- 前記第1の導電型領域及び前記第2の導電型領域を形成するステップと前記電極を形成するステップとの間に、透明電極層(Transparent Conducting Oxide、TCO)を前記第1の導電型領域上及び前記第2の導電型領域上に形成するステップをさらに含み、
前記電極を形成ステップにおいて前記電極は、前記透明電極層に接続する、請求項1に記載の太陽電池の製造方法。
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KR1020170008116A KR101879363B1 (ko) | 2017-01-17 | 2017-01-17 | 태양 전지 제조 방법 |
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US (1) | US10593558B2 (ja) |
EP (1) | EP3349257B1 (ja) |
JP (1) | JP6567705B2 (ja) |
KR (1) | KR101879363B1 (ja) |
CN (1) | CN108336170B (ja) |
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CN111739986A (zh) * | 2020-06-16 | 2020-10-02 | 江苏爱康能源研究院有限公司 | 一种提高高效晶硅异质结太阳能电池短路电流的方法 |
CN112531052B (zh) * | 2020-12-28 | 2022-03-22 | 苏州腾晖光伏技术有限公司 | 异质结电池结构及其制备方法 |
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US6468885B1 (en) * | 1996-09-26 | 2002-10-22 | Midwest Research Institute | Deposition of device quality, low hydrogen content, hydrogenated amorphous silicon at high deposition rates |
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