JP6566952B2 - 光反応性液体組成物及び構造体の作製方法 - Google Patents

光反応性液体組成物及び構造体の作製方法 Download PDF

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JP6566952B2
JP6566952B2 JP2016536814A JP2016536814A JP6566952B2 JP 6566952 B2 JP6566952 B2 JP 6566952B2 JP 2016536814 A JP2016536814 A JP 2016536814A JP 2016536814 A JP2016536814 A JP 2016536814A JP 6566952 B2 JP6566952 B2 JP 6566952B2
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liquid composition
photoreactive
photon
photoreactive liquid
multiphoton
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JP2017502331A (ja
JP2017502331A5 (https=
Inventor
リ ズー−チェン
リ ズー−チェン
ジェイ.デボウ ロバート
ジェイ.デボウ ロバート
ケー.ネルソン ブライアン
ケー.ネルソン ブライアン
ジェイ.ゲイツ ブライアン
ジェイ.ゲイツ ブライアン
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3M Innovative Properties Co
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3M Innovative Properties Co
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0037Production of three-dimensional images
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/704162.5D lithography
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00Processes of polymerisation
    • C08F2/46Polymerisation initiated by wave energy or particle radiation
    • C08F2/48Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • C08F2/50Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031Organic compounds not covered by group G03F7/029
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2012Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2051Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/10Esters
    • C08F222/1006Esters of polyhydric alcohols or polyhydric phenols
    • C08F222/103Esters of polyhydric alcohols or polyhydric phenols of trialcohols, e.g. trimethylolpropane tri(meth)acrylate

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Epoxy Resins (AREA)
  • Polymerisation Methods In General (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Micromachines (AREA)
JP2016536814A 2013-12-06 2014-12-01 光反応性液体組成物及び構造体の作製方法 Active JP6566952B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361912754P 2013-12-06 2013-12-06
US61/912,754 2013-12-06
PCT/US2014/067955 WO2015084735A2 (en) 2013-12-06 2014-12-01 Liquid photoreactive composition and method of fabricating structures

Publications (3)

Publication Number Publication Date
JP2017502331A JP2017502331A (ja) 2017-01-19
JP2017502331A5 JP2017502331A5 (https=) 2017-11-09
JP6566952B2 true JP6566952B2 (ja) 2019-08-28

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US (1) US10133174B2 (https=)
EP (1) EP3077421B1 (https=)
JP (1) JP6566952B2 (https=)
CN (1) CN105917275B (https=)
WO (1) WO2015084735A2 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5584202B2 (ja) 2008-05-21 2014-09-03 セラジェクト, インコーポレイテッド 固溶体穿孔器パッチの製造方法及びその使用
CN105793758A (zh) 2013-12-06 2016-07-20 3M创新有限公司 具有保护元件的半潜式显微镜物镜和物镜在多光子成像方法中的用途
FR3049606B1 (fr) 2016-03-30 2018-04-13 Universite Grenoble Alpes Composition photosensible activable par absorption multiphotonique pour fabrication tridimensionnelle
CN107390471A (zh) * 2017-08-21 2017-11-24 中国科学院重庆绿色智能技术研究院 一类用于双光子光刻的抗蚀剂及其应用
CN107322927A (zh) * 2017-08-22 2017-11-07 瑞安市麦田网络科技有限公司 一种光固化3d打印机
US11809161B2 (en) * 2020-07-13 2023-11-07 Lawrence Livermore National Security, Llc Computed axial lithography optimization system
US20220035251A1 (en) * 2020-07-31 2022-02-03 Applied Materials, Inc. Methods to fabricate 2d wedge and localized encapsulation for diffractive optics
US20250325986A1 (en) 2022-06-23 2025-10-23 Solventum Intellectual Properties Company Methods and devices for removing particles from fluids
WO2024105470A1 (en) 2022-11-15 2024-05-23 Solventum Intellectual Properties Company Microstructured substrate including connected wells
EP4619157A1 (en) 2022-11-15 2025-09-24 Solventum Intellectual Properties Company Methods and kits for removing particles from fluids

Family Cites Families (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3808006A (en) 1971-12-06 1974-04-30 Minnesota Mining & Mfg Photosensitive material containing a diaryliodium compound, a sensitizer and a color former
US3729313A (en) 1971-12-06 1973-04-24 Minnesota Mining & Mfg Novel photosensitive systems comprising diaryliodonium compounds and their use
US3741769A (en) 1972-10-24 1973-06-26 Minnesota Mining & Mfg Novel photosensitive polymerizable systems and their use
AU497960B2 (en) 1974-04-11 1979-01-25 Minnesota Mining And Manufacturing Company Photopolymerizable compositions
US4250053A (en) 1979-05-21 1981-02-10 Minnesota Mining And Manufacturing Company Sensitized aromatic iodonium or aromatic sulfonium salt photoinitiator systems
CA1323949C (en) 1987-04-02 1993-11-02 Michael C. Palazzotto Ternary photoinitiator system for addition polymerization
US4859572A (en) 1988-05-02 1989-08-22 Eastman Kodak Company Dye sensitized photographic imaging system
WO1998021521A1 (en) 1996-11-12 1998-05-22 California Institute Of Technology Two-photon or higher-order absorbing optical materials and methods of use
US6608228B1 (en) 1997-11-07 2003-08-19 California Institute Of Technology Two-photon or higher-order absorbing optical materials for generation of reactive species
US6335149B1 (en) 1997-04-08 2002-01-01 Corning Incorporated High performance acrylate materials for optical interconnects
US6025406A (en) 1997-04-11 2000-02-15 3M Innovative Properties Company Ternary photoinitiator system for curing of epoxy resins
US5859251A (en) 1997-09-18 1999-01-12 The United States Of America As Represented By The Secretary Of The Air Force Symmetrical dyes with large two-photon absorption cross-sections
US5770737A (en) 1997-09-18 1998-06-23 The United States Of America As Represented By The Secretary Of The Air Force Asymmetrical dyes with large two-photon absorption cross-sections
US6100405A (en) 1999-06-15 2000-08-08 The United States Of America As Represented By The Secretary Of The Air Force Benzothiazole-containing two-photon chromophores exhibiting strong frequency upconversion
US6852766B1 (en) 2000-06-15 2005-02-08 3M Innovative Properties Company Multiphoton photosensitization system
JP2004503831A (ja) 2000-06-15 2004-02-05 スリーエム イノベイティブ プロパティズ カンパニー マルチパス多光子吸収方法および装置
WO2001096917A2 (en) 2000-06-15 2001-12-20 3M Innovative Properties Company Multiphoton curing to provide encapsulated optical elements
US7265161B2 (en) 2002-10-02 2007-09-04 3M Innovative Properties Company Multi-photon reactive compositions with inorganic particles and method for fabricating structures
EP1297021B1 (en) 2000-06-15 2009-03-18 3M Innovative Properties Company Multiphoton photosensitization system
KR100795759B1 (ko) 2000-06-15 2008-01-21 쓰리엠 이노베이티브 프로퍼티즈 캄파니 미세유체 물품의 제조 방법
JP4965052B2 (ja) 2000-06-15 2012-07-04 スリーエム イノベイティブ プロパティズ カンパニー 3次元光学素子の加工方法
US7118845B2 (en) 2000-06-15 2006-10-10 3M Innovative Properties Company Multiphoton photochemical process and articles preparable thereby
WO2001096959A2 (en) 2000-06-15 2001-12-20 3M Innovative Properties Company Multidirectional photoreactive absorption method
US7381516B2 (en) 2002-10-02 2008-06-03 3M Innovative Properties Company Multiphoton photosensitization system
US7005229B2 (en) 2002-10-02 2006-02-28 3M Innovative Properties Company Multiphoton photosensitization method
EP2236488A1 (en) 2001-03-30 2010-10-06 The Arizona Board of Regents on behalf of the University of Arizona Materials, methods and uses for photochemical generation of acids and/or radical species
US20040012872A1 (en) 2001-06-14 2004-01-22 Fleming Patrick R Multiphoton absorption method using patterned light
US6750266B2 (en) 2001-12-28 2004-06-15 3M Innovative Properties Company Multiphoton photosensitization system
US7232650B2 (en) 2002-10-02 2007-06-19 3M Innovative Properties Company Planar inorganic device
US20030155667A1 (en) 2002-12-12 2003-08-21 Devoe Robert J Method for making or adding structures to an article
TWI223736B (en) 2002-12-19 2004-11-11 Ind Tech Res Inst Hybrid photoresist with multi reaction models and process for forming pattern using the same
JP4430622B2 (ja) 2003-12-05 2010-03-10 スリーエム イノベイティブ プロパティズ カンパニー フォトニック結晶の製造方法
US20050124712A1 (en) 2003-12-05 2005-06-09 3M Innovative Properties Company Process for producing photonic crystals
JP5306814B2 (ja) 2005-09-13 2013-10-02 スリーディー システムズ インコーポレーテッド Abs類似物品製造を目的とした光硬化性組成物
US7893410B2 (en) 2005-12-21 2011-02-22 3M Innovative Properties Company Method and apparatus for processing multiphoton curable photoreactive compositions
US7583444B1 (en) 2005-12-21 2009-09-01 3M Innovative Properties Company Process for making microlens arrays and masterforms
WO2007112309A2 (en) 2006-03-24 2007-10-04 3M Innovative Properties Company Process for making microneedles, microneedle arrays, masters, and replication tools
JP2009537870A (ja) * 2006-05-18 2009-10-29 スリーエム イノベイティブ プロパティズ カンパニー 抽出構造体を備えた導光体の製造方法及びその方法で製造された導光体
JP5559033B2 (ja) 2007-04-13 2014-07-23 スリーディー システムズ インコーポレーテッド 二元光開始剤、光硬化型組成物、三次元物品製造へのこれらの使用、および製造方法
WO2009032813A2 (en) 2007-09-06 2009-03-12 3M Innovative Properties Company Lightguides having light extraction structures providing regional control of light output
US9102083B2 (en) 2007-09-06 2015-08-11 3M Innovative Properties Company Methods of forming molds and methods of forming articles using said molds
WO2009048705A1 (en) 2007-10-11 2009-04-16 3M Innovative Properties Company Highly functional multiphoton curable reactive species
WO2009070500A1 (en) 2007-11-27 2009-06-04 Huntsman Advanced Materials Americas Inc. Photocurable resin composition for producing three dimensional articles having high clarity
CN103257379B (zh) 2007-11-27 2015-08-05 3M创新有限公司 形成具有悬浮合成图像的片材的母模
KR101403187B1 (ko) 2008-02-19 2014-06-02 삼성전자주식회사 감광성 조성물, 이를 이용한 미세 가공 방법 및 그에 의해형성된 미세 가공물
JP5584202B2 (ja) 2008-05-21 2014-09-03 セラジェクト, インコーポレイテッド 固溶体穿孔器パッチの製造方法及びその使用
CN102301277B (zh) 2008-12-05 2013-07-17 3M创新有限公司 使用非线性热聚合的三维制品
JP5346618B2 (ja) * 2009-02-19 2013-11-20 シーメット株式会社 炭素質立体造形物の製造方法
ES2464495T3 (es) 2009-07-30 2014-06-03 3M Innovative Properties Company Tobera y método para hacer la misma
JP2012047787A (ja) 2010-08-24 2012-03-08 Daicel Corp 体積ホログラム記録用感光性組成物および媒体製造法
DE102011012484B4 (de) 2011-02-25 2025-08-14 Nanoscribe Holding Gmbh Verfahren und Vorrichtung zum ortsaufgelösten Einbringen eines Intensitätsmusters aus elektromagnetischer Strahlung in eine photosensitive Substanz sowie Verwendung hiervon
CN103492951A (zh) 2011-04-22 2014-01-01 3M创新有限公司 增大多光子成像分辨率的方法
CN105793758A (zh) 2013-12-06 2016-07-20 3M创新有限公司 具有保护元件的半潜式显微镜物镜和物镜在多光子成像方法中的用途

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JP2017502331A (ja) 2017-01-19
CN105917275B (zh) 2018-01-16
CN105917275A (zh) 2016-08-31
WO2015084735A3 (en) 2015-08-13
EP3077421A2 (en) 2016-10-12
US20160306277A1 (en) 2016-10-20
WO2015084735A2 (en) 2015-06-11
US10133174B2 (en) 2018-11-20
EP3077421B1 (en) 2018-01-31

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