CN105917275B - 液体光反应性组合物以及制造结构的方法 - Google Patents

液体光反应性组合物以及制造结构的方法 Download PDF

Info

Publication number
CN105917275B
CN105917275B CN201480066600.6A CN201480066600A CN105917275B CN 105917275 B CN105917275 B CN 105917275B CN 201480066600 A CN201480066600 A CN 201480066600A CN 105917275 B CN105917275 B CN 105917275B
Authority
CN
China
Prior art keywords
photoreactive composition
liquid photoreactive
liquid
component
photon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201480066600.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN105917275A (zh
Inventor
李子成
罗伯特·J·德沃
布赖恩·K·纳尔逊
布赖恩·J·盖茨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of CN105917275A publication Critical patent/CN105917275A/zh
Application granted granted Critical
Publication of CN105917275B publication Critical patent/CN105917275B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0037—Production of three-dimensional images
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70416—2.5D lithography
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/46—Polymerisation initiated by wave energy or particle radiation
    • C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2012—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/10—Esters
    • C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
    • C08F222/103—Esters of polyhydric alcohols or polyhydric phenols of trialcohols, e.g. trimethylolpropane tri(meth)acrylate

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Polymerisation Methods In General (AREA)
  • Materials For Photolithography (AREA)
  • Epoxy Resins (AREA)
  • Micromachines (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN201480066600.6A 2013-12-06 2014-12-01 液体光反应性组合物以及制造结构的方法 Active CN105917275B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361912754P 2013-12-06 2013-12-06
US61/912,754 2013-12-06
PCT/US2014/067955 WO2015084735A2 (en) 2013-12-06 2014-12-01 Liquid photoreactive composition and method of fabricating structures

Publications (2)

Publication Number Publication Date
CN105917275A CN105917275A (zh) 2016-08-31
CN105917275B true CN105917275B (zh) 2018-01-16

Family

ID=52278753

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480066600.6A Active CN105917275B (zh) 2013-12-06 2014-12-01 液体光反应性组合物以及制造结构的方法

Country Status (5)

Country Link
US (1) US10133174B2 (https=)
EP (1) EP3077421B1 (https=)
JP (1) JP6566952B2 (https=)
CN (1) CN105917275B (https=)
WO (1) WO2015084735A2 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009142741A1 (en) 2008-05-21 2009-11-26 Theraject, Inc. Method of manufacturing solid solution peforator patches and uses thereof
EP3432049B1 (en) 2013-12-06 2024-07-31 3M Innovative Properties Co. Semi-submersible microscope objective for in a multiphoton stereolithography process
FR3049606B1 (fr) 2016-03-30 2018-04-13 Universite Grenoble Alpes Composition photosensible activable par absorption multiphotonique pour fabrication tridimensionnelle
CN107390471A (zh) * 2017-08-21 2017-11-24 中国科学院重庆绿色智能技术研究院 一类用于双光子光刻的抗蚀剂及其应用
CN107322927A (zh) * 2017-08-22 2017-11-07 瑞安市麦田网络科技有限公司 一种光固化3d打印机
US11809161B2 (en) * 2020-07-13 2023-11-07 Lawrence Livermore National Security, Llc Computed axial lithography optimization system
US20220035251A1 (en) * 2020-07-31 2022-02-03 Applied Materials, Inc. Methods to fabricate 2d wedge and localized encapsulation for diffractive optics
EP4543592A1 (en) 2022-06-23 2025-04-30 Solventum Intellectual Properties Company Methods and devices for removing particles from fluids
EP4619153A1 (en) 2022-11-15 2025-09-24 Solventum Intellectual Properties Company Microstructured substrate including connected wells
EP4619157A1 (en) 2022-11-15 2025-09-24 Solventum Intellectual Properties Company Methods and kits for removing particles from fluids

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102105108A (zh) * 2008-05-21 2011-06-22 谢拉杰克特股份有限公司 制作固体溶液穿孔器贴剂的方法及其使用

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3729313A (en) 1971-12-06 1973-04-24 Minnesota Mining & Mfg Novel photosensitive systems comprising diaryliodonium compounds and their use
US3808006A (en) 1971-12-06 1974-04-30 Minnesota Mining & Mfg Photosensitive material containing a diaryliodium compound, a sensitizer and a color former
US3741769A (en) 1972-10-24 1973-06-26 Minnesota Mining & Mfg Novel photosensitive polymerizable systems and their use
AU497960B2 (en) 1974-04-11 1979-01-25 Minnesota Mining And Manufacturing Company Photopolymerizable compositions
US4250053A (en) 1979-05-21 1981-02-10 Minnesota Mining And Manufacturing Company Sensitized aromatic iodonium or aromatic sulfonium salt photoinitiator systems
CA1323949C (en) 1987-04-02 1993-11-02 Michael C. Palazzotto Ternary photoinitiator system for addition polymerization
US4859572A (en) 1988-05-02 1989-08-22 Eastman Kodak Company Dye sensitized photographic imaging system
WO1998021521A1 (en) 1996-11-12 1998-05-22 California Institute Of Technology Two-photon or higher-order absorbing optical materials and methods of use
US6608228B1 (en) 1997-11-07 2003-08-19 California Institute Of Technology Two-photon or higher-order absorbing optical materials for generation of reactive species
US6335149B1 (en) 1997-04-08 2002-01-01 Corning Incorporated High performance acrylate materials for optical interconnects
US6025406A (en) 1997-04-11 2000-02-15 3M Innovative Properties Company Ternary photoinitiator system for curing of epoxy resins
US5859251A (en) 1997-09-18 1999-01-12 The United States Of America As Represented By The Secretary Of The Air Force Symmetrical dyes with large two-photon absorption cross-sections
US5770737A (en) 1997-09-18 1998-06-23 The United States Of America As Represented By The Secretary Of The Air Force Asymmetrical dyes with large two-photon absorption cross-sections
US6100405A (en) 1999-06-15 2000-08-08 The United States Of America As Represented By The Secretary Of The Air Force Benzothiazole-containing two-photon chromophores exhibiting strong frequency upconversion
US7381516B2 (en) 2002-10-02 2008-06-03 3M Innovative Properties Company Multiphoton photosensitization system
US7014988B2 (en) 2000-06-15 2006-03-21 3M Innovative Properties Company Multiphoton curing to provide encapsulated optical elements
DE60139620D1 (de) 2000-06-15 2009-10-01 3M Innovative Properties Co Methode und gerät zur erzielung wiederholter multiphotonabsorption
ATE433129T1 (de) 2000-06-15 2009-06-15 3M Innovative Properties Co Mikroherstellungsverfahren für organische optische bauteile
US7005229B2 (en) 2002-10-02 2006-02-28 3M Innovative Properties Company Multiphoton photosensitization method
US7118845B2 (en) 2000-06-15 2006-10-10 3M Innovative Properties Company Multiphoton photochemical process and articles preparable thereby
DE60138021D1 (https=) 2000-06-15 2009-04-30 3M Innovative Properties Co
WO2001096958A2 (en) 2000-06-15 2001-12-20 3M Innovative Properties Company Process for producing microfluidic articles
JP2004503928A (ja) * 2000-06-15 2004-02-05 スリーエム　イノベイティブ　プロパティズ　カンパニー 多方向光反応吸収方法
US7265161B2 (en) 2002-10-02 2007-09-04 3M Innovative Properties Company Multi-photon reactive compositions with inorganic particles and method for fabricating structures
US6852766B1 (en) * 2000-06-15 2005-02-08 3M Innovative Properties Company Multiphoton photosensitization system
AU2002306752B2 (en) 2001-03-30 2008-10-16 The Arizona Board Of Regents On Behalf Of The University Of Arizona Materials, methods, and uses for photochemical generation of acids and/or radical species
US20040012872A1 (en) 2001-06-14 2004-01-22 Fleming Patrick R Multiphoton absorption method using patterned light
US6750266B2 (en) 2001-12-28 2004-06-15 3M Innovative Properties Company Multiphoton photosensitization system
US7232650B2 (en) 2002-10-02 2007-06-19 3M Innovative Properties Company Planar inorganic device
US20030155667A1 (en) 2002-12-12 2003-08-21 Devoe Robert J Method for making or adding structures to an article
TWI223736B (en) 2002-12-19 2004-11-11 Ind Tech Res Inst Hybrid photoresist with multi reaction models and process for forming pattern using the same
US20050124712A1 (en) 2003-12-05 2005-06-09 3M Innovative Properties Company Process for producing photonic crystals
EP1723455B1 (en) 2003-12-05 2009-08-12 3M Innovative Properties Company Process for producing photonic crystals
KR101291891B1 (ko) 2005-09-13 2013-07-31 3디 시스템즈 인코오퍼레이티드 Ａｂｓ-유사 물품을 제조하기 위한 광경화성 조성물
US7583444B1 (en) 2005-12-21 2009-09-01 3M Innovative Properties Company Process for making microlens arrays and masterforms
DE112006003494T5 (de) 2005-12-21 2008-10-30 3M Innovative Properties Co., Saint Paul Verfahren und Vorrichtung zur Verarbeitung von mehrphotonen-aushärtbaren photoreaktiven Zusammensetzungen
WO2007112309A2 (en) * 2006-03-24 2007-10-04 3M Innovative Properties Company Process for making microneedles, microneedle arrays, masters, and replication tools
JP2009537870A (ja) * 2006-05-18 2009-10-29 スリーエム イノベイティブ プロパティズ カンパニー 抽出構造体を備えた導光体の製造方法及びその方法で製造された導光体
US7964248B2 (en) 2007-04-13 2011-06-21 Huntsman Advanced Materials Americas Llc Dual photoinitiator, photocurable composition, use thereof and process for producing a three dimensional article
CN101795838B (zh) 2007-09-06 2014-02-12 3M创新有限公司 形成模具的方法以及使用所述模具形成制品的方法
US8322874B2 (en) 2007-09-06 2012-12-04 3M Innovative Properties Company Lightguides having light extraction structures providing regional control of light output
EP2207820A4 (en) 2007-10-11 2011-10-26 3M Innovative Properties Co HIGHLY FUNCTIONAL REACTIVE SPECIES WITH MULTIPHOTONIC HARDENING
EP2215525B1 (en) 2007-11-27 2018-01-10 3D Systems Incorporated Photocurable resin composition for producing three dimensional articles having high clarity
US8586285B2 (en) 2007-11-27 2013-11-19 3M Innovative Properties Company Methods for forming sheeting with a composite image that floats and a master tooling
KR101403187B1 (ko) 2008-02-19 2014-06-02 삼성전자주식회사 감광성 조성물, 이를 이용한 미세 가공 방법 및 그에 의해형성된 미세 가공물
CN102301277B (zh) 2008-12-05 2013-07-17 3M创新有限公司 使用非线性热聚合的三维制品
JP5346618B2 (ja) * 2009-02-19 2013-11-20 シーメット株式会社 炭素質立体造形物の製造方法
US9333598B2 (en) 2009-07-30 2016-05-10 3M Innovative Properties Company Method of making a nozzle
JP2012047787A (ja) 2010-08-24 2012-03-08 Daicel Corp 体積ホログラム記録用感光性組成物および媒体製造法
DE102011012484B4 (de) 2011-02-25 2025-08-14 Nanoscribe Holding Gmbh Verfahren und Vorrichtung zum ortsaufgelösten Einbringen eines Intensitätsmusters aus elektromagnetischer Strahlung in eine photosensitive Substanz sowie Verwendung hiervon
JP2014517856A (ja) 2011-04-22 2014-07-24 スリーエム イノベイティブ プロパティズ カンパニー 改善された多光子撮像解像方法
EP3432049B1 (en) 2013-12-06 2024-07-31 3M Innovative Properties Co. Semi-submersible microscope objective for in a multiphoton stereolithography process

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102105108A (zh) * 2008-05-21 2011-06-22 谢拉杰克特股份有限公司 制作固体溶液穿孔器贴剂的方法及其使用

Also Published As

Publication number Publication date
EP3077421B1 (en) 2018-01-31
WO2015084735A2 (en) 2015-06-11
US20160306277A1 (en) 2016-10-20
CN105917275A (zh) 2016-08-31
EP3077421A2 (en) 2016-10-12
WO2015084735A3 (en) 2015-08-13
JP2017502331A (ja) 2017-01-19
US10133174B2 (en) 2018-11-20
JP6566952B2 (ja) 2019-08-28

Similar Documents

Publication Publication Date Title
CN105917275B (zh) 液体光反应性组合物以及制造结构的方法
JP5059273B2 (ja) 多光子感光化方法
US6852766B1 (en) Multiphoton photosensitization system
US7118845B2 (en) Multiphoton photochemical process and articles preparable thereby
JP6216811B2 (ja) 抽出構造体を備えた導光体の製造方法及びその方法で製造された導光体
JP5221375B2 (ja) マイクロレンズアレイ及び原型を作製する方法
Geisler et al. 3D printing of optical materials by processes based on photopolymerization: materials, technologies, and recent advances
CN100468104C (zh) 制造光子晶体的方法
JP2006501521A (ja) 無機粒子を有する多光子反応性組成物および構造の製造方法
JP2011501772A (ja) 高機能性多光子硬化性反応種
JP2007525685A (ja) フォトニック結晶およびその中に制御された欠陥を製造する方法
JP2004503928A (ja) 多方向光反応吸収方法
US20030155667A1 (en) Method for making or adding structures to an article
JP4689936B2 (ja) 構造を製作するか又は物品に構造を付加するための方法
JP2004503832A (ja) パターン化された光を用いる多光子吸収法
US20140030655A1 (en) Enhanced Multi-Photon Imaging Resolution Method
US20150030985A1 (en) Multiphoton Curing Methods Using Negative Contrast Compositions
Žukauskas et al. 3D micro-optics via ultrafast laser writing: miniaturization, integration, and multifunctionalities

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant