JP6559326B2 - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 claims description 57
- 238000010438 heat treatment Methods 0.000 claims description 50
- 239000007790 solid phase Substances 0.000 claims description 46
- 239000004065 semiconductor Substances 0.000 claims description 22
- 230000001681 protective effect Effects 0.000 claims description 16
- 239000012535 impurity Substances 0.000 description 54
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 50
- 229910052814 silicon oxide Inorganic materials 0.000 description 49
- 230000008569 process Effects 0.000 description 29
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 28
- 238000005530 etching Methods 0.000 description 24
- 239000012298 atmosphere Substances 0.000 description 21
- 230000015572 biosynthetic process Effects 0.000 description 20
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 17
- 239000007789 gas Substances 0.000 description 17
- 229910052760 oxygen Inorganic materials 0.000 description 17
- 239000001301 oxygen Substances 0.000 description 17
- 238000000926 separation method Methods 0.000 description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 13
- 229910052796 boron Inorganic materials 0.000 description 13
- 238000002161 passivation Methods 0.000 description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 12
- 229910052698 phosphorus Inorganic materials 0.000 description 12
- 239000011574 phosphorus Substances 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 8
- 239000007864 aqueous solution Substances 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 8
- 239000011737 fluorine Substances 0.000 description 8
- 229910052731 fluorine Inorganic materials 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000011109 contamination Methods 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 239000005368 silicate glass Substances 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- -1 fluorine ions Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 239000005635 Caprylic acid (CAS 124-07-2) Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229960002446 octanoic acid Drugs 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Description
図1は、本発明にかかる太陽電池の製造方法の実施の形態1を示す製造工程のフローチャートであり、図2(a)から(d)および図3(a)から(d)は、実施の形態1にかかる太陽電池の製造方法を示す工程断面図である。図2(a)から(d)は、実施の形態1にかかる太陽電池の製造方法のうち、図1中に示す炉内での連続処理における太陽電池基板の変化を示す断面図である。図3(a)から(d)は実施の形態1の製造工程中の、図2(a)から(d)に示す熱処理に続く工程での太陽電池の断面の変化を示す模式図である。図4は、炉内の温度と環境状態についてのタイムチャートである。
実施の形態2にかかる太陽電池の製造方法は、実施の形態1に示した太陽電池の製造方法に対し、受光面側、裏面側の何れかまたは両方に、部分的な高濃度拡散層を形成する。裏面側の酸化膜除去工程とリン拡散工程を除き同一であるため、実施の形態1を参照することとして詳細な説明は省略する。
BSG膜2およびシリコン酸化膜3の除去については、全て除去するのではなく、端面およびそのごく近傍のみを対象としてBSG膜2およびシリコン酸化膜3を除去するようにしてもよい。図8は、実施の形態3の太陽電池の製造方法を示すフローチャート、図9(a)から図9(d)は、実施の形態3の太陽電池の製造工程の要部を示す工程断面図である。
Claims (6)
- 相対向する第1および第2主面を有する第1導電型の半導体基板の前記第1主面に固相拡散源と保護膜とを成膜する工程と、
前記成膜する工程で前記第2主面に形成される生成物を除去する工程と、
前記生成物の除去された前記半導体基板を加熱し、前記固相拡散源から、前記第1主面側に第2導電型の第1の拡散層を形成する工程と、
前記半導体基板の前記第2主面に第1導電型を有する第2の拡散層を形成する工程と、
前記固相拡散源と前記保護膜とを共に除去する工程と、
前記第2の拡散層と前記第1の拡散層とを電気的に分離する工程と、
を含み、
前記固相拡散源と前記保護膜とを共に除去する工程は、
前記第2の拡散層と前記第1の拡散層を電気的に分離する工程より前に実施されることを特徴とする太陽電池の製造方法。 - 前記生成物を除去する工程は、
前記第1の拡散層を形成する工程に先だち、実施されることを特徴とする請求項1に記載の太陽電池の製造方法。 - 前記固相拡散源と前記保護膜とを共に除去する工程は、
前記半導体基板の前記第1主面上の前記固相拡散源と前記保護膜を残し、前記半導体基板の側面上の前記固相拡散源と前記保護膜を選択的に除去する工程であることを特徴とする請求項1または2に記載の太陽電池の製造方法。 - 前記固相拡散源と保護膜とを成膜する工程は、
前記固相拡散源と前記保護膜とを連続的に成膜する工程を含むことを特徴とする請求項1から3のいずれか1項に記載の太陽電池の製造方法。 - 前記第1導電型を有する前記第2の拡散層を形成する工程は、前記第2主面の一部に選択的に前記固相拡散源と異なる固相拡散源を形成する工程を含むことを特徴とする請求項1から4のいずれか1項に記載の太陽電池の製造方法。
- 相対向する第1および第2主面を有する第1導電型の半導体基板の前記第1主面に固相拡散源と保護膜とを成膜する工程と、
前記成膜する工程で前記第2主面に形成される生成物を除去する工程と、
前記生成物の除去された前記半導体基板を加熱し、前記固相拡散源から、前記半導体基板を加熱して前記第1主面側に第2導電型の第1の拡散層を形成する工程と、
前記固相拡散源と前記保護膜とを共に除去する工程と、
を含むことを特徴とする太陽電池の製造方法。
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PCT/JP2016/058000 WO2017158691A1 (ja) | 2016-03-14 | 2016-03-14 | 太陽電池の製造方法 |
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JPWO2017158691A1 JPWO2017158691A1 (ja) | 2018-06-28 |
JP6559326B2 true JP6559326B2 (ja) | 2019-08-14 |
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JP (1) | JP6559326B2 (ja) |
CN (1) | CN108780825A (ja) |
TW (1) | TWI629804B (ja) |
WO (1) | WO2017158691A1 (ja) |
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CN115188834B (zh) | 2021-09-10 | 2023-09-22 | 上海晶科绿能企业管理有限公司 | 太阳能电池及其制备方法、光伏组件 |
CN116844937B (zh) * | 2023-06-30 | 2024-04-09 | 淮安捷泰新能源科技有限公司 | 硅片的rca清洗方法 |
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JPH04318981A (ja) * | 1991-04-17 | 1992-11-10 | Mitsubishi Electric Corp | 赤外線検出器の製造方法 |
JP5236914B2 (ja) * | 2007-09-19 | 2013-07-17 | シャープ株式会社 | 太陽電池の製造方法 |
NL2003511C2 (en) * | 2009-09-18 | 2011-03-22 | Solar Cell Company Holding B V | Method for fabricating a photovoltaic cell and a photovoltaic cell obtained using such a method. |
US20110114147A1 (en) * | 2009-11-18 | 2011-05-19 | Solar Wind Ltd. | Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof |
JP2014027133A (ja) * | 2012-07-27 | 2014-02-06 | Sharp Corp | 太陽電池セル、インターコネクタ付き太陽電池セルおよび太陽電池モジュール |
US9837575B2 (en) * | 2013-02-06 | 2017-12-05 | Panasonic Production Engineering Co., Ltd. | Method of manufacturing solar battery cell |
JP2015106624A (ja) * | 2013-11-29 | 2015-06-08 | 京セラ株式会社 | 太陽電池の製造方法 |
JP2015138959A (ja) * | 2014-01-24 | 2015-07-30 | 三菱電機株式会社 | 光起電力装置および光起電力装置の製造方法 |
JP6139466B2 (ja) * | 2014-05-30 | 2017-05-31 | 信越化学工業株式会社 | 太陽電池の製造方法 |
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2016
- 2016-03-14 CN CN201680082530.2A patent/CN108780825A/zh not_active Withdrawn
- 2016-03-14 JP JP2018505078A patent/JP6559326B2/ja not_active Expired - Fee Related
- 2016-03-14 WO PCT/JP2016/058000 patent/WO2017158691A1/ja active Application Filing
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Also Published As
Publication number | Publication date |
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WO2017158691A1 (ja) | 2017-09-21 |
TW201803148A (zh) | 2018-01-16 |
CN108780825A (zh) | 2018-11-09 |
TWI629804B (zh) | 2018-07-11 |
JPWO2017158691A1 (ja) | 2018-06-28 |
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