JP6557585B2 - プラズマ処理方法 - Google Patents

プラズマ処理方法 Download PDF

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Publication number
JP6557585B2
JP6557585B2 JP2015235358A JP2015235358A JP6557585B2 JP 6557585 B2 JP6557585 B2 JP 6557585B2 JP 2015235358 A JP2015235358 A JP 2015235358A JP 2015235358 A JP2015235358 A JP 2015235358A JP 6557585 B2 JP6557585 B2 JP 6557585B2
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film
wafer
gas
processing chamber
coating film
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JP2017103345A5 (https=
JP2017103345A (ja
Inventor
和幸 池永
和幸 池永
角屋　誠浩
誠浩 角屋
義人 釜地
義人 釜地
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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JP2015235358A 2015-12-02 2015-12-02 プラズマ処理方法 Active JP6557585B2 (ja)

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JP2015235358A JP6557585B2 (ja) 2015-12-02 2015-12-02 プラズマ処理方法

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JP2015235358A JP6557585B2 (ja) 2015-12-02 2015-12-02 プラズマ処理方法

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JP2017103345A JP2017103345A (ja) 2017-06-08
JP2017103345A5 JP2017103345A5 (https=) 2018-06-21
JP6557585B2 true JP6557585B2 (ja) 2019-08-07

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6799550B2 (ja) * 2018-01-16 2020-12-16 東京エレクトロン株式会社 プラズマ処理装置の部品をクリーニングする方法
JP6799549B2 (ja) * 2018-01-16 2020-12-16 東京エレクトロン株式会社 プラズマ処理装置の部品をクリーニングする方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100198678B1 (ko) * 1996-02-28 1999-06-15 구본준 금속 배선 구조 및 형성방법
JP2009158504A (ja) * 2007-12-25 2009-07-16 Panasonic Corp 半導体製造装置および半導体装置の製造方法
JP4792097B2 (ja) * 2009-03-25 2011-10-12 株式会社東芝 不揮発性記憶装置及びその製造方法
JP2013214584A (ja) * 2012-04-02 2013-10-17 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
WO2014042192A1 (ja) * 2012-09-13 2014-03-20 東京エレクトロン株式会社 被処理基体を処理する方法、及びプラズマ処理装置
CN104766890B (zh) * 2014-01-06 2018-04-27 上海和辉光电有限公司 薄膜晶体管及其制造方法和应用

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