JP6549917B2 - プラズマ処理装置およびそのデータ解析装置 - Google Patents

プラズマ処理装置およびそのデータ解析装置 Download PDF

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Publication number
JP6549917B2
JP6549917B2 JP2015129022A JP2015129022A JP6549917B2 JP 6549917 B2 JP6549917 B2 JP 6549917B2 JP 2015129022 A JP2015129022 A JP 2015129022A JP 2015129022 A JP2015129022 A JP 2015129022A JP 6549917 B2 JP6549917 B2 JP 6549917B2
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plasma processing
wavelength
light emission
data
plasma
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JP2017017067A5 (enExample
JP2017017067A (ja
Inventor
涼次 朝倉
涼次 朝倉
玉置　研二
研二 玉置
鹿子嶋　昭
昭 鹿子嶋
白石　大輔
大輔 白石
角屋　誠浩
誠浩 角屋
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2015129022A priority Critical patent/JP6549917B2/ja
Priority to KR1020160006841A priority patent/KR101763780B1/ko
Priority to TW105104762A priority patent/TWI585852B/zh
Priority to TW106112389A priority patent/TWI608540B/zh
Priority to US15/050,631 priority patent/US10510519B2/en
Publication of JP2017017067A publication Critical patent/JP2017017067A/ja
Publication of JP2017017067A5 publication Critical patent/JP2017017067A5/ja
Application granted granted Critical
Publication of JP6549917B2 publication Critical patent/JP6549917B2/ja
Priority to US16/666,842 priority patent/US11538671B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP2015129022A 2015-06-26 2015-06-26 プラズマ処理装置およびそのデータ解析装置 Active JP6549917B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2015129022A JP6549917B2 (ja) 2015-06-26 2015-06-26 プラズマ処理装置およびそのデータ解析装置
KR1020160006841A KR101763780B1 (ko) 2015-06-26 2016-01-20 플라즈마 처리 장치 및 그의 데이터 해석 장치
TW106112389A TWI608540B (zh) 2015-06-26 2016-02-18 Plasma processing device and its data analysis device
TW105104762A TWI585852B (zh) 2015-06-26 2016-02-18 Plasma processing device and its data analysis device
US15/050,631 US10510519B2 (en) 2015-06-26 2016-02-23 Plasma processing apparatus and data analysis apparatus
US16/666,842 US11538671B2 (en) 2015-06-26 2019-10-29 Plasma processing apparatus and data analysis apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015129022A JP6549917B2 (ja) 2015-06-26 2015-06-26 プラズマ処理装置およびそのデータ解析装置

Publications (3)

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JP2017017067A JP2017017067A (ja) 2017-01-19
JP2017017067A5 JP2017017067A5 (enExample) 2018-04-19
JP6549917B2 true JP6549917B2 (ja) 2019-07-24

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JP2015129022A Active JP6549917B2 (ja) 2015-06-26 2015-06-26 プラズマ処理装置およびそのデータ解析装置

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US (2) US10510519B2 (enExample)
JP (1) JP6549917B2 (enExample)
KR (1) KR101763780B1 (enExample)
TW (2) TWI585852B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6173851B2 (ja) * 2013-09-20 2017-08-02 株式会社日立ハイテクノロジーズ 分析方法およびプラズマエッチング装置
DE102017108496B4 (de) * 2017-04-21 2023-06-29 Windmöller & Hölscher Kg Verfahren und Vorrichtungen sowie System zum Auf- und Abwickeln eines Wickels
JP6875224B2 (ja) 2017-08-08 2021-05-19 株式会社日立ハイテク プラズマ処理装置及び半導体装置製造システム
JP7058129B2 (ja) * 2018-01-17 2022-04-21 株式会社日立ハイテク プラズマ処理装置
JP7017985B2 (ja) * 2018-06-05 2022-02-09 株式会社日立製作所 システム及び処理条件の決定方法
US10854433B2 (en) * 2018-11-30 2020-12-01 Applied Materials, Inc. In-situ real-time plasma chamber condition monitoring
KR20220100046A (ko) * 2019-11-21 2022-07-14 램 리써치 코포레이션 제조 챔버들 내에서 이상 (anomalous) 플라즈마 이벤트들의 검출 및 위치 확인 (location)
CN113287190B (zh) * 2019-12-20 2023-12-22 株式会社日立高新技术 等离子处理装置以及晶片处理方法
JP7413081B2 (ja) * 2020-02-28 2024-01-15 東京エレクトロン株式会社 基板処理システム
TWI895368B (zh) * 2020-03-13 2025-09-01 日商東京威力科創股份有限公司 解析裝置、解析方法及解析程式
JP7467292B2 (ja) * 2020-03-13 2024-04-15 東京エレクトロン株式会社 解析装置、解析方法及び解析プログラム
CN114121642A (zh) * 2021-10-27 2022-03-01 北京北方华创微电子装备有限公司 实时调节通孔刻蚀形貌的刻蚀方法及半导体刻蚀设备
JP2023156153A (ja) * 2022-04-12 2023-10-24 東京エレクトロン株式会社 処理データの解析方法、および情報処理装置
KR20240030108A (ko) * 2022-08-29 2024-03-07 삼성전자주식회사 검사 방법, 이를 포함하는 기판 처리 방법, 및 이를 이용한 기판 처리 장치
JPWO2024181164A1 (enExample) * 2023-03-01 2024-09-06

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5928532A (en) * 1996-11-11 1999-07-27 Tokyo Electron Limited Method of detecting end point of plasma processing and apparatus for the same
JP2000208478A (ja) * 1999-01-12 2000-07-28 Matsushita Electronics Industry Corp 処理装置及び処理方法
JP4213871B2 (ja) * 2001-02-01 2009-01-21 株式会社日立製作所 半導体装置の製造方法
JP3905466B2 (ja) * 2002-12-05 2007-04-18 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
DE602004017983D1 (de) * 2003-05-09 2009-01-08 Unaxis Usa Inc Endpunkt-Erkennung in einem zeitlich gemultiplexten Verfahren unter Verwendung eines Hüllkurvenalgorithmus
JP2007214254A (ja) 2006-02-08 2007-08-23 Renesas Technology Corp 半導体装置の製造方法およびプラズマ処理装置
JP5383265B2 (ja) * 2009-03-17 2014-01-08 株式会社日立ハイテクノロジーズ エッチング装置、分析装置、エッチング処理方法、およびエッチング処理プログラム
JP5334787B2 (ja) * 2009-10-09 2013-11-06 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5688227B2 (ja) * 2010-02-26 2015-03-25 株式会社日立ハイテクノロジーズ エッチング装置、制御シミュレータ、及び半導体装置製造方法
JP5675195B2 (ja) * 2010-07-20 2015-02-25 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
JP2013161913A (ja) 2012-02-03 2013-08-19 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
JP6002487B2 (ja) 2012-07-20 2016-10-05 株式会社日立ハイテクノロジーズ 分析方法、分析装置、及びエッチング処理システム
JP6088867B2 (ja) * 2013-03-15 2017-03-01 株式会社日立ハイテクノロジーズ プラズマ処理装置及び分析装置
JP5596832B2 (ja) 2013-07-29 2014-09-24 株式会社日立ハイテクノロジーズ プラズマ処理方法のＲｕｎ−ｔｏ−Ｒｕｎ制御方法
JP6173851B2 (ja) 2013-09-20 2017-08-02 株式会社日立ハイテクノロジーズ 分析方法およびプラズマエッチング装置

Also Published As

Publication number Publication date
KR101763780B1 (ko) 2017-08-01
KR20170001553A (ko) 2017-01-04
US20160379896A1 (en) 2016-12-29
TWI585852B (zh) 2017-06-01
US10510519B2 (en) 2019-12-17
US11538671B2 (en) 2022-12-27
TW201701350A (zh) 2017-01-01
TW201727739A (zh) 2017-08-01
TWI608540B (zh) 2017-12-11
US20200066500A1 (en) 2020-02-27
JP2017017067A (ja) 2017-01-19

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