TWI585852B - Plasma processing device and its data analysis device - Google Patents
Plasma processing device and its data analysis device Download PDFInfo
- Publication number
- TWI585852B TWI585852B TW105104762A TW105104762A TWI585852B TW I585852 B TWI585852 B TW I585852B TW 105104762 A TW105104762 A TW 105104762A TW 105104762 A TW105104762 A TW 105104762A TW I585852 B TWI585852 B TW I585852B
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- Taiwan
- Prior art keywords
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- wavelength
- plasma
- plasma processing
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- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims description 277
- 238000007405 data analysis Methods 0.000 title claims description 27
- 238000004458 analytical method Methods 0.000 claims description 95
- 238000000034 method Methods 0.000 claims description 74
- 230000008569 process Effects 0.000 claims description 57
- 238000004364 calculation method Methods 0.000 claims description 43
- 238000009832 plasma treatment Methods 0.000 claims description 27
- 238000004020 luminiscence type Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 235000012431 wafers Nutrition 0.000 description 107
- 238000001636 atomic emission spectroscopy Methods 0.000 description 65
- 238000012544 monitoring process Methods 0.000 description 42
- 239000007789 gas Substances 0.000 description 29
- 238000010586 diagram Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 239000007795 chemical reaction product Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 230000032683 aging Effects 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 238000004891 communication Methods 0.000 description 5
- 238000013500 data storage Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 4
- 238000005286 illumination Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000010219 correlation analysis Methods 0.000 description 1
- 238000012888 cubic function Methods 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
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- 230000003287 optical effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32972—Spectral analysis
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Manufacturing & Machinery (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015129022A JP6549917B2 (ja) | 2015-06-26 | 2015-06-26 | プラズマ処理装置およびそのデータ解析装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201701350A TW201701350A (zh) | 2017-01-01 |
| TWI585852B true TWI585852B (zh) | 2017-06-01 |
Family
ID=57602764
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105104762A TWI585852B (zh) | 2015-06-26 | 2016-02-18 | Plasma processing device and its data analysis device |
| TW106112389A TWI608540B (zh) | 2015-06-26 | 2016-02-18 | Plasma processing device and its data analysis device |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106112389A TWI608540B (zh) | 2015-06-26 | 2016-02-18 | Plasma processing device and its data analysis device |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US10510519B2 (enExample) |
| JP (1) | JP6549917B2 (enExample) |
| KR (1) | KR101763780B1 (enExample) |
| TW (2) | TWI585852B (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6173851B2 (ja) * | 2013-09-20 | 2017-08-02 | 株式会社日立ハイテクノロジーズ | 分析方法およびプラズマエッチング装置 |
| DE102017108496B4 (de) * | 2017-04-21 | 2023-06-29 | Windmöller & Hölscher Kg | Verfahren und Vorrichtungen sowie System zum Auf- und Abwickeln eines Wickels |
| JP6875224B2 (ja) * | 2017-08-08 | 2021-05-19 | 株式会社日立ハイテク | プラズマ処理装置及び半導体装置製造システム |
| JP7058129B2 (ja) * | 2018-01-17 | 2022-04-21 | 株式会社日立ハイテク | プラズマ処理装置 |
| JP7017985B2 (ja) * | 2018-06-05 | 2022-02-09 | 株式会社日立製作所 | システム及び処理条件の決定方法 |
| US10854433B2 (en) * | 2018-11-30 | 2020-12-01 | Applied Materials, Inc. | In-situ real-time plasma chamber condition monitoring |
| WO2021101993A1 (en) * | 2019-11-21 | 2021-05-27 | Lam Research Corporation | Detection and location of anomalous plasma events in fabrication chambers |
| JP6935598B1 (ja) * | 2019-12-20 | 2021-09-15 | 株式会社日立ハイテク | プラズマ処理装置およびウエハ処理方法 |
| JP7413081B2 (ja) * | 2020-02-28 | 2024-01-15 | 東京エレクトロン株式会社 | 基板処理システム |
| JP7467292B2 (ja) * | 2020-03-13 | 2024-04-15 | 東京エレクトロン株式会社 | 解析装置、解析方法及び解析プログラム |
| TWI895368B (zh) * | 2020-03-13 | 2025-09-01 | 日商東京威力科創股份有限公司 | 解析裝置、解析方法及解析程式 |
| CN114121642A (zh) * | 2021-10-27 | 2022-03-01 | 北京北方华创微电子装备有限公司 | 实时调节通孔刻蚀形貌的刻蚀方法及半导体刻蚀设备 |
| JP2023156153A (ja) * | 2022-04-12 | 2023-10-24 | 東京エレクトロン株式会社 | 処理データの解析方法、および情報処理装置 |
| KR20240030108A (ko) * | 2022-08-29 | 2024-03-07 | 삼성전자주식회사 | 검사 방법, 이를 포함하는 기판 처리 방법, 및 이를 이용한 기판 처리 장치 |
| JPWO2024181164A1 (enExample) * | 2023-03-01 | 2024-09-06 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201133611A (en) * | 2010-02-26 | 2011-10-01 | Hitachi High Tech Corp | Etching device, control simulator, and method of manufacturing semiconductor device |
| TW201409565A (zh) * | 2012-07-20 | 2014-03-01 | Hitachi High Tech Corp | 分析方法、分析裝置及蝕刻處理系統 |
| TW201513209A (zh) * | 2013-09-20 | 2015-04-01 | Hitachi High Tech Corp | 分析方法及半導體蝕刻裝置 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5928532A (en) * | 1996-11-11 | 1999-07-27 | Tokyo Electron Limited | Method of detecting end point of plasma processing and apparatus for the same |
| JP2000208478A (ja) * | 1999-01-12 | 2000-07-28 | Matsushita Electronics Industry Corp | 処理装置及び処理方法 |
| JP4213871B2 (ja) * | 2001-02-01 | 2009-01-21 | 株式会社日立製作所 | 半導体装置の製造方法 |
| JP3905466B2 (ja) * | 2002-12-05 | 2007-04-18 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| CN100401491C (zh) * | 2003-05-09 | 2008-07-09 | 优利讯美国有限公司 | 时分复用处理中的包络跟随器终点检测 |
| JP2007214254A (ja) | 2006-02-08 | 2007-08-23 | Renesas Technology Corp | 半導体装置の製造方法およびプラズマ処理装置 |
| JP5383265B2 (ja) * | 2009-03-17 | 2014-01-08 | 株式会社日立ハイテクノロジーズ | エッチング装置、分析装置、エッチング処理方法、およびエッチング処理プログラム |
| JP5334787B2 (ja) | 2009-10-09 | 2013-11-06 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| JP5675195B2 (ja) * | 2010-07-20 | 2015-02-25 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法 |
| JP2013161913A (ja) | 2012-02-03 | 2013-08-19 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法 |
| JP6088867B2 (ja) * | 2013-03-15 | 2017-03-01 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及び分析装置 |
| JP5596832B2 (ja) | 2013-07-29 | 2014-09-24 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法のＲｕｎ−ｔｏ−Ｒｕｎ制御方法 |
-
2015
- 2015-06-26 JP JP2015129022A patent/JP6549917B2/ja active Active
-
2016
- 2016-01-20 KR KR1020160006841A patent/KR101763780B1/ko active Active
- 2016-02-18 TW TW105104762A patent/TWI585852B/zh active
- 2016-02-18 TW TW106112389A patent/TWI608540B/zh active
- 2016-02-23 US US15/050,631 patent/US10510519B2/en active Active
-
2019
- 2019-10-29 US US16/666,842 patent/US11538671B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201133611A (en) * | 2010-02-26 | 2011-10-01 | Hitachi High Tech Corp | Etching device, control simulator, and method of manufacturing semiconductor device |
| TW201409565A (zh) * | 2012-07-20 | 2014-03-01 | Hitachi High Tech Corp | 分析方法、分析裝置及蝕刻處理系統 |
| TW201513209A (zh) * | 2013-09-20 | 2015-04-01 | Hitachi High Tech Corp | 分析方法及半導體蝕刻裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6549917B2 (ja) | 2019-07-24 |
| US11538671B2 (en) | 2022-12-27 |
| US20200066500A1 (en) | 2020-02-27 |
| US10510519B2 (en) | 2019-12-17 |
| TW201701350A (zh) | 2017-01-01 |
| JP2017017067A (ja) | 2017-01-19 |
| KR101763780B1 (ko) | 2017-08-01 |
| TW201727739A (zh) | 2017-08-01 |
| KR20170001553A (ko) | 2017-01-04 |
| TWI608540B (zh) | 2017-12-11 |
| US20160379896A1 (en) | 2016-12-29 |
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