JP6541406B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP6541406B2
JP6541406B2 JP2015086682A JP2015086682A JP6541406B2 JP 6541406 B2 JP6541406 B2 JP 6541406B2 JP 2015086682 A JP2015086682 A JP 2015086682A JP 2015086682 A JP2015086682 A JP 2015086682A JP 6541406 B2 JP6541406 B2 JP 6541406B2
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gas
processing chamber
pipe
mass flow
flow controller
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JP2016207409A5 (enExample
JP2016207409A (ja
Inventor
基裕 田中
基裕 田中
靖 園田
靖 園田
安井　尚輝
尚輝 安井
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
JP2015086682A 2015-04-21 2015-04-21 プラズマ処理装置 Active JP6541406B2 (ja)

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JP2015086682A JP6541406B2 (ja) 2015-04-21 2015-04-21 プラズマ処理装置

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JP2015086682A JP6541406B2 (ja) 2015-04-21 2015-04-21 プラズマ処理装置

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JP2016207409A JP2016207409A (ja) 2016-12-08
JP2016207409A5 JP2016207409A5 (enExample) 2018-02-01
JP6541406B2 true JP6541406B2 (ja) 2019-07-10

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7296854B2 (ja) * 2019-11-07 2023-06-23 東京エレクトロン株式会社 ガス供給方法及び基板処理装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070066038A1 (en) * 2004-04-30 2007-03-22 Lam Research Corporation Fast gas switching plasma processing apparatus
JP4782585B2 (ja) * 2006-02-28 2011-09-28 株式会社日立ハイテクノロジーズ プラズマエッチング装置及び方法
JP5235293B2 (ja) * 2006-10-02 2013-07-10 東京エレクトロン株式会社 処理ガス供給機構および処理ガス供給方法ならびにガス処理装置
JP5442413B2 (ja) * 2009-12-03 2014-03-12 ルネサスエレクトロニクス株式会社 半導体製造装置および流量制御装置
JP6027490B2 (ja) * 2013-05-13 2016-11-16 東京エレクトロン株式会社 ガスを供給する方法、及びプラズマ処理装置

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