JP6537363B2 - 有機イリジウム化合物からなる化学蒸着用原料及び化学蒸着法、並びに、電気化学用触媒の製造方法 - Google Patents
有機イリジウム化合物からなる化学蒸着用原料及び化学蒸着法、並びに、電気化学用触媒の製造方法 Download PDFInfo
- Publication number
- JP6537363B2 JP6537363B2 JP2015123420A JP2015123420A JP6537363B2 JP 6537363 B2 JP6537363 B2 JP 6537363B2 JP 2015123420 A JP2015123420 A JP 2015123420A JP 2015123420 A JP2015123420 A JP 2015123420A JP 6537363 B2 JP6537363 B2 JP 6537363B2
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- chemical vapor
- iridium
- film
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005229 chemical vapour deposition Methods 0.000 title claims description 50
- 239000002994 raw material Substances 0.000 title claims description 41
- 239000003054 catalyst Substances 0.000 title claims description 36
- 150000002504 iridium compounds Chemical class 0.000 title claims description 33
- 238000000034 method Methods 0.000 title claims description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000010409 thin film Substances 0.000 claims description 61
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 claims description 47
- 229910000457 iridium oxide Inorganic materials 0.000 claims description 47
- 229910052741 iridium Inorganic materials 0.000 claims description 38
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 30
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 21
- 238000005868 electrolysis reaction Methods 0.000 claims description 19
- 125000001424 substituent group Chemical group 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 14
- 125000000217 alkyl group Chemical group 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 230000001590 oxidative effect Effects 0.000 claims description 9
- 239000012495 reaction gas Substances 0.000 claims description 9
- 125000004665 trialkylsilyl group Chemical group 0.000 claims description 9
- 125000004432 carbon atom Chemical group C* 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- 230000008016 vaporization Effects 0.000 claims description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 2
- 229910001882 dioxygen Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 description 95
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 31
- 239000002131 composite material Substances 0.000 description 27
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 20
- 229910052760 oxygen Inorganic materials 0.000 description 20
- 239000001301 oxygen Substances 0.000 description 20
- 238000011282 treatment Methods 0.000 description 18
- 238000004458 analytical method Methods 0.000 description 15
- 230000000694 effects Effects 0.000 description 14
- 230000003647 oxidation Effects 0.000 description 13
- 238000007254 oxidation reaction Methods 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 230000003197 catalytic effect Effects 0.000 description 9
- 238000002484 cyclic voltammetry Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000012528 membrane Substances 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 238000005259 measurement Methods 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 229910021607 Silver chloride Inorganic materials 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 239000003446 ligand Substances 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 150000003377 silicon compounds Chemical class 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 230000005518 electrochemistry Effects 0.000 description 4
- 239000008151 electrolyte solution Substances 0.000 description 4
- 238000005979 thermal decomposition reaction Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000006056 electrooxidation reaction Methods 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 230000004580 weight loss Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000002290 gas chromatography-mass spectrometry Methods 0.000 description 2
- 229910052809 inorganic oxide Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- AQRLNPVMDITEJU-UHFFFAOYSA-N triethylsilane Chemical compound CC[SiH](CC)CC AQRLNPVMDITEJU-UHFFFAOYSA-N 0.000 description 2
- 230000007306 turnover Effects 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- ZKPHEWYDICTCGD-UHFFFAOYSA-N CC1=C(C(=C(C1(C)[IrH2]([Si](CC)(CC)CC)[Si](CC)(CC)CC)C)C)C Chemical compound CC1=C(C(=C(C1(C)[IrH2]([Si](CC)(CC)CC)[Si](CC)(CC)CC)C)C)C ZKPHEWYDICTCGD-UHFFFAOYSA-N 0.000 description 1
- BBVIQHLJRNEBBW-UHFFFAOYSA-L Cl[Ir]Cl Chemical compound Cl[Ir]Cl BBVIQHLJRNEBBW-UHFFFAOYSA-L 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- OOKGEJVHXPLQQN-UHFFFAOYSA-N [Si]=O.[Ir]=O Chemical compound [Si]=O.[Ir]=O OOKGEJVHXPLQQN-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- MMAGMBCAIFVRGJ-UHFFFAOYSA-J iridium(3+);1,2,3,4,5-pentamethylcyclopenta-1,3-diene;tetrachloride Chemical compound Cl[Ir+]Cl.Cl[Ir+]Cl.CC=1C(C)=C(C)[C-](C)C=1C.CC=1C(C)=C(C)[C-](C)C=1C MMAGMBCAIFVRGJ-UHFFFAOYSA-J 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000008055 phosphate buffer solution Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- FKHIFSZMMVMEQY-UHFFFAOYSA-N talc Chemical compound [Mg+2].[O-][Si]([O-])=O FKHIFSZMMVMEQY-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- ZMANZCXQSJIPKH-UHFFFAOYSA-O triethylammonium ion Chemical compound CC[NH+](CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-O 0.000 description 1
Landscapes
- Electrodes For Compound Or Non-Metal Manufacture (AREA)
- Chemical Vapour Deposition (AREA)
Description
第1実施形態:本実施形態では、化学蒸着の原料となる有機イリジウム化合物として、上記化4で示した有機イリジウム化合物である、ジヒドリド(ペンタメチルシクロペンタジエニル)ビス(トリエチルシリル)イリジウム([{(C5Me5)Ir(H)2(SiEt3)2}]):化1のR1、R2、R3、R4、R5が全てメチル基であり、R6、R7、R8、R9、R10、R11が全てエチル基である)を用意した。そして、この有機イリジウム化合物にて成膜を行い、得られた薄膜を酸化処理して複合材料からなる薄膜を製造した。
ペンタメチル−シクロペンタジエニルイリジウム(III)ジクロリド二量体([{(C5Me5)Ir}2Cl4])0.5g(0.62mmol)とトリエチルシラン(SiEt3)2cm3(12.6mmol)、更に、トリエチルアミン2cm3の混合溶液(溶媒:ベンゼン(10cm3))を15分間還流して反応させた。このとき溶液の色は緑色から黄色に変化した。反応後、トリエチルアンモニウムをフィルター除去すると共に、溶媒を減圧留去した。得られた油分について、有機シリコン組成物等の不純物を除去するため、メタノールで洗浄して白色の固形分採取した。この固形分をヘキサンとフロリジルを用いたクロマトグラフィーで分離精製して目的の有機イリジウム化合物結晶(無色)を得た。
上記で製造した有機イリジウム化合物について、TG−DTA分析により、熱分解特性と蒸気圧を評価した。TG−DTA分析は、窒素気流下(200cc(標準状態)/min)、試料を昇温速度2℃/minにて室温から450℃まで加熱した際の試料の重量変化を観察した。この測定結果を図1に示す。
本実施形態の有機イリジウム化合物を原料とし(反応ガス:酸素)、チューブ型化学気相蒸着(CVD)装置を用い、イリジウム薄膜を成膜した。この成膜試験に用いた基板は、FTO(フッ素ドープ酸化錫)がコートされたガラス基板である。このCVDによる成膜直後のイリジウム薄膜は、イリジウム中に酸化ケイ素がドープされた薄膜である。以下、この酸化ケイ素がドープされたイリジウム薄膜を「A1膜」と称して説明する。成膜条件は、次の通りである。
原料気化温度:95℃
基板加熱温度:400℃
反応ガス:酸素40sccm(キャリアガスを兼ねる)
反応器圧力:55−60Pa
成膜時間:5分
上記で成膜したA1膜を酸化処理してIrを酸化し、酸化イリジウムと酸化ケイ素とからなる薄膜を製造した。以下、A1膜の酸化処理により製造された複合材料膜について、「A2膜」と称する。
Claims (10)
- 有機イリジウム化合物からなり、化学蒸着法によりイリジウム及びケイ素を含む薄膜を製造するための化学蒸着用原料であって、
前記有機イリジウム化合物は、イリジウムに、シクロペンタジエン又はその誘導体及びトリアルキルシリル基が配位した次式で示される有機イリジウム化合物である化学蒸着用原料。
- R6、R7、R8、R9、R10、R11の全ての置換基がエチル基である請求項1記載の化学蒸着用原料。
- R1、R2、R3、R4、R5の全ての置換基が水素である請求項1又は請求項2記載の化学蒸着用原料。
- R1、R2、R3、R4、R5の少なくとも一つの置換基がメチル基であり、他の置換基が水素である請求項1又は請求項2記載の化学蒸着用原料。
- R1、R2、R3、R4、R5の少なくとも一つの置換基がエチル基であり、他の置換基が水素である請求項1又は請求項2記載の化学蒸着用原料。
- 有機イリジウム化合物からなる原料を気化して原料ガスとし、前記原料ガスを反応器に導入した後、前記有機イリジウム化合物を分解して、イリジウム及びケイ素を含む薄膜を製造する化学蒸着法において、
前記原料として請求項1〜請求項5のいずれかに記載の化学蒸着用原料を用いる化学蒸着法。 - 反応ガスとして酸素ガスを適用する請求項6記載の化学蒸着法。
- 更に、薄膜を酸化処理する工程を含む請求項6又は請求項7記載の化学蒸着法。
- 基材上に形成され、イリジウム酸化物及びケイ素酸化物を含む電気化学用触媒を製造するための方法であって、
請求項6〜請求項8のいずれかに記載の化学蒸着法により、基材上にイリジウム及びケイ素を含む薄膜を製造する工程を含む電気化学用触媒の製造方法。 - イリジウム及びケイ素を含む電気化学用触媒層を備える電解用電極の製造方法であって、
請求項9記載の方法により、基材上に前記電気化学用触媒層を製造する工程を含む電解用電極の製造方法
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015123420A JP6537363B2 (ja) | 2015-06-19 | 2015-06-19 | 有機イリジウム化合物からなる化学蒸着用原料及び化学蒸着法、並びに、電気化学用触媒の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015123420A JP6537363B2 (ja) | 2015-06-19 | 2015-06-19 | 有機イリジウム化合物からなる化学蒸着用原料及び化学蒸着法、並びに、電気化学用触媒の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017008351A JP2017008351A (ja) | 2017-01-12 |
JP6537363B2 true JP6537363B2 (ja) | 2019-07-03 |
Family
ID=57762836
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015123420A Active JP6537363B2 (ja) | 2015-06-19 | 2015-06-19 | 有機イリジウム化合物からなる化学蒸着用原料及び化学蒸着法、並びに、電気化学用触媒の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP6537363B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6321252B1 (ja) * | 2017-03-24 | 2018-05-09 | 田中貴金属工業株式会社 | イリジウム錯体からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 |
US11515552B2 (en) | 2018-03-22 | 2022-11-29 | Kabushiki Kaisha Toshiba | Catalyst laminate, membrane electrode assembly, electrochemical cell, stack, water electrolyzer, and hydrogen utilizing system |
JP6971944B2 (ja) * | 2018-03-22 | 2021-11-24 | 株式会社東芝 | 触媒積層体、膜電極複合体、電気化学セル、スタック、水電解装置および水利用システム |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11335887A (ja) * | 1998-05-28 | 1999-12-07 | Tanaka Kikinzoku Kogyo Kk | 高耐久性電極の製造方法 |
JP4553642B2 (ja) * | 2003-08-19 | 2010-09-29 | 東ソー株式会社 | 有機イリジウム化合物、その製法、及び膜の製造方法 |
US7976989B2 (en) * | 2003-10-29 | 2011-07-12 | Umicore Ag & Co. Kg | Precious metal oxide catalyst for water electrolysis |
JP2005206874A (ja) * | 2004-01-22 | 2005-08-04 | Tosoh Corp | イリジウム含有膜形成材料及びイリジウム含有膜の製造方法 |
JP2005213620A (ja) * | 2004-01-30 | 2005-08-11 | Mitsubishi Heavy Ind Ltd | 次亜塩素酸生成方法及び該装置 |
-
2015
- 2015-06-19 JP JP2015123420A patent/JP6537363B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2017008351A (ja) | 2017-01-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Vedhanarayanan et al. | Enhanced activity and stability of MoS2 through enriching 1T-phase by covalent functionalization for energy conversion applications | |
Oakton et al. | IrO2-TiO2: a high-surface-area, active, and stable electrocatalyst for the oxygen evolution reaction | |
Saadi et al. | Operando synthesis of macroporous molybdenum diselenide films for electrocatalysis of the hydrogen-evolution reaction | |
Ejigu et al. | Synergistic catalyst–support interactions in a graphene–Mn3O4 electrocatalyst for vanadium redox flow batteries | |
Naeem et al. | Fabrication of pristine Mn 2 O 3 and Ag–Mn 2 O 3 composite thin films by AACVD for photoelectrochemical water splitting | |
Arciga-Duran et al. | Effect of oxygen vacancies in electrodeposited NiO towards the oxygen evolution reaction: Role of Ni-Glycine complexes | |
US9790605B2 (en) | Iridium complexes for electrocatalysis | |
Feng et al. | Nanoporous copper incorporated platinum composites for electrocatalytic reduction of CO2 in ionic liquid BMIMBF4 | |
Basiriparsa et al. | High-efficiency ozone generation via electrochemical oxidation of water using Ti anode coated with Ni–Sb–SnO 2 | |
US20130087461A1 (en) | Catalyst coating and process for producing it | |
Zhou et al. | Nickel complex engineered interface energetics for efficient photoelectrochemical hydrogen evolution over p-Si | |
JP6537363B2 (ja) | 有機イリジウム化合物からなる化学蒸着用原料及び化学蒸着法、並びに、電気化学用触媒の製造方法 | |
Ehsan et al. | Hierarchical growth of CoO nanoflower thin films influencing the electrocatalytic oxygen evolution reaction | |
Kan et al. | Highly active IrO x nanoparticles/black Si electrode for efficient water splitting with conformal TiO2 interface engineering | |
JPWO2014136783A1 (ja) | バナジン酸ビスマス積層体の製造方法及びバナジン酸ビスマス積層体 | |
JP2013166994A (ja) | 電解用電極、電解槽及び電解用電極の製造方法 | |
Zheng et al. | Construction of a hierarchically structured, NiCo–Cu-based trifunctional electrocatalyst for efficient overall water splitting and 5-hydroxymethylfurfural oxidation | |
Wang et al. | Preparation of new titanium oxy nitride based electro catalysts using an anhydrous sol-gel method for water electrolysis in acid medium | |
KR20200031914A (ko) | 전기화학적 암모니아 합성용 촉매 및 이의 제조방법 | |
KR20150103864A (ko) | 알칼리 수전해용 전극촉매의 제조방법, 알칼리 수전해용 전극촉매 조성의 조절방법 및 이를 통해 제조된 알칼리 수전해용 전극촉매 | |
CN107268023A (zh) | 一种修饰石墨烯担载贵金属氧化物阳极的制备方法 | |
Natarajan et al. | Performance and degradation studies of RuO2–Ta2O5 anode electrocatalyst for high temperature PBI based proton exchange membrane water electrolyser | |
Shin et al. | Effect of oxygen incorporation in amorphous molybdenum sulfide on electrochemical hydrogen evolution | |
Ollo et al. | Influence of various metallic oxides on the kinetic of the oxygen evolution reaction on platinum electrodes | |
CN105063665A (zh) | 一种从离子液体中电沉积纳米铂粉的方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180112 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180824 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180928 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181122 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190514 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190604 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6537363 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |