JP6532465B2 - 表面上に堆積パターンを形成する方法 - Google Patents
表面上に堆積パターンを形成する方法 Download PDFInfo
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- JP6532465B2 JP6532465B2 JP2016535704A JP2016535704A JP6532465B2 JP 6532465 B2 JP6532465 B2 JP 6532465B2 JP 2016535704 A JP2016535704 A JP 2016535704A JP 2016535704 A JP2016535704 A JP 2016535704A JP 6532465 B2 JP6532465 B2 JP 6532465B2
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- wafer
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- bottom portion
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- 238000000034 method Methods 0.000 title claims description 35
- 230000008021 deposition Effects 0.000 title description 2
- 235000012431 wafers Nutrition 0.000 claims description 89
- 239000003795 chemical substances by application Substances 0.000 claims description 46
- 239000006117 anti-reflective coating Substances 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 37
- 239000006082 mold release agent Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 19
- 239000011248 coating agent Substances 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 17
- 238000003491 array Methods 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 2
- 238000007654 immersion Methods 0.000 claims description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 description 7
- 239000010410 layer Substances 0.000 description 6
- 238000005498 polishing Methods 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000010438 granite Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/00373—Selective deposition, e.g. printing or microcontact printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/0183—Selective deposition
- B81C2201/0188—Selective deposition techniques not provided for in B81C2201/0184 - B81C2201/0187
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Micromachines (AREA)
- Physical Vapour Deposition (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Description
Claims (4)
- 基板の選択された部分上に材料のコーティングを形成する方法であって、前記基板は、前記基板の第1の面の選択された部分に形成された複数のキャビティを有し、各キャビティが、底部分と、該底部分から前記基板の前記第1の面まで延在する外周側壁を有し、当該方法は、
上に離型剤を有する構造体を用意し、
前記キャビティの前記底部分を前記離型剤から離間させたまま、前記基板の前記第1の面を前記離型剤と接触させて、前記離型剤の一部を前記基板の前記第1の面に転写することで、前記キャビティの前記底部分が前記離型剤を欠いた状態で前記基板の前記第1の面上に前記離型剤が置かれた表面、を有する中間構造を作り出し、
前記中間構造の前記表面を前記材料に晒して、前記基板の前記第1の面上に置かれた前記離型剤と前記キャビティの前記底部分との双方の上に前記材料をブランケットコーティングし、
前記材料がブランケットコーティングされた前記中間構造を、前記キャビティの前記底部分上の前記材料を残しながら前記離型剤をその上の前記材料と一緒に前記基板の前記第1の面から選択的に除去するプロセスにかける
ことを有する、方法。 - 光エネルギー透過ウエハの選択された部分上に反射防止コーティングを形成する方法であって、前記光エネルギー透過ウエハは、前記光エネルギー透過ウエハの第1の面の選択された部分に形成された複数のキャビティを有し、各キャビティが、底部分と、該底部分から前記光エネルギー透過ウエハの前記第1の面まで延在する外周側壁を有し、当該方法は、
上に離型剤を有する構造体を用意し、
前記キャビティの前記底部分を前記離型剤から離間させたまま、前記光エネルギー透過ウエハの前記第1の面を前記離型剤の一部と接触させて、前記離型剤を前記光エネルギー透過ウエハの前記第1の面に転写することで、前記キャビティの前記底部分が前記離型剤を欠いた状態で前記光エネルギー透過ウエハの前記第1の面上に前記離型剤が置かれた表面、を有する中間構造を作り出し、
前記中間構造の前記表面を反射防止コーティング材料に晒して、前記光エネルギー透過ウエハの前記第1の面上に置かれた前記離型剤と前記キャビティの前記底部分との双方の上に前記反射防止コーティング材料をブランケットコーティングし、
前記反射防止コーティング材料がブランケットコーティングされた前記中間構造を、前記キャビティの前記底部分上の前記反射防止コーティング材料を残しながら前記離型剤をその上の前記反射防止コーティング材料と一緒に選択的に除去するプロセスにかける
ことを有する、方法。 - 各々が前記キャビティのうちの対応する1つと関連付けられた複数の検出器アレイ、を有する第2のウエハを用意し、
前記アレイの各々を前記キャビティのうちの前記対応する1つとアライメントし、
上に前記反射防止コーティング材料を有する前記キャビティの各々を、対応する前記アレイから離し、且つ前記光エネルギー透過ウエハの前記第1の面を前記第2のウエハに接合して、前記光エネルギー透過ウエハを前記第2のウエハに接合する、
ことを含む請求項2に記載の方法。 - 前記離型剤はポリビニルアルコールであり、前記選択的に除去するプロセスは水への浸漬を有する、請求項1乃至3の何れか一項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/100,048 US9105800B2 (en) | 2013-12-09 | 2013-12-09 | Method of forming deposited patterns on a surface |
US14/100,048 | 2013-12-09 | ||
PCT/US2014/067285 WO2015088771A1 (en) | 2013-12-09 | 2014-11-25 | Method of forming deposited patterns on a surface |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017502328A JP2017502328A (ja) | 2017-01-19 |
JP6532465B2 true JP6532465B2 (ja) | 2019-06-19 |
Family
ID=52302306
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016535704A Active JP6532465B2 (ja) | 2013-12-09 | 2014-11-25 | 表面上に堆積パターンを形成する方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US9105800B2 (ja) |
EP (1) | EP3041784B1 (ja) |
JP (1) | JP6532465B2 (ja) |
KR (1) | KR102047869B1 (ja) |
CN (1) | CN105612119B (ja) |
CA (1) | CA2924123C (ja) |
IL (1) | IL244513B (ja) |
WO (1) | WO2015088771A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9570321B1 (en) | 2015-10-20 | 2017-02-14 | Raytheon Company | Use of an external getter to reduce package pressure |
FR3088319B1 (fr) * | 2018-11-08 | 2020-10-30 | Ulis | Boitier hermetique comportant un getter, composant optoelectronique ou dispositif mems integrant un tel boitier hermetique et procede de fabrication associe |
CN114210970B (zh) * | 2021-12-28 | 2023-09-22 | 北京建工环境修复股份有限公司 | 一种包膜铁碳复合材料和制备、改性方法及污水处理方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3161474B2 (ja) * | 1991-06-20 | 2001-04-25 | 凸版印刷株式会社 | 位相シフトマスク及びその製造方法 |
US6252229B1 (en) | 1998-07-10 | 2001-06-26 | Boeing North American, Inc. | Sealed-cavity microstructure and microbolometer and associated fabrication methods |
CN100359653C (zh) * | 2002-04-15 | 2008-01-02 | 肖特股份公司 | 用于连结基片的处理和复合元件 |
FR2846906B1 (fr) * | 2002-11-08 | 2005-08-05 | Commissariat Energie Atomique | Procede de realisation d'un composant comportant un micro-joint et composant realise par ce procede |
WO2005057644A1 (ja) * | 2003-12-15 | 2005-06-23 | The Furukawa Electric Co., Ltd. | ウェハ加工用テープおよびその製造方法 |
US7381583B1 (en) | 2004-05-24 | 2008-06-03 | The United States Of America As Represented By The Secretary Of The Air Force | MEMS RF switch integrated process |
JP2009130110A (ja) | 2007-11-22 | 2009-06-11 | Sumitomo Electric Ind Ltd | Iii族窒化物系面発光素子およびその製造方法 |
US20110014732A1 (en) * | 2009-07-20 | 2011-01-20 | Lee Je-Hsiang | Light-emitting module fabrication method |
US8696740B2 (en) * | 2010-01-05 | 2014-04-15 | The Johns Hopkins University | Implantable pressure-actuated drug delivery systems and methods of manufacture and use |
JP2011192868A (ja) * | 2010-03-16 | 2011-09-29 | Tokyo Electron Ltd | テンプレート処理方法、プログラム、コンピュータ記憶媒体及びテンプレート処理装置 |
EP2484629B1 (fr) | 2011-02-03 | 2013-06-26 | Nivarox-FAR S.A. | Pièce de micromécanique complexe ajourée |
JP5929203B2 (ja) * | 2012-01-10 | 2016-06-01 | 株式会社リコー | レンズ一体型基板及び光センサ |
-
2013
- 2013-12-09 US US14/100,048 patent/US9105800B2/en active Active
-
2014
- 2014-11-25 WO PCT/US2014/067285 patent/WO2015088771A1/en active Application Filing
- 2014-11-25 KR KR1020167013973A patent/KR102047869B1/ko active IP Right Grant
- 2014-11-25 CN CN201480055529.1A patent/CN105612119B/zh not_active Expired - Fee Related
- 2014-11-25 EP EP14824962.6A patent/EP3041784B1/en active Active
- 2014-11-25 CA CA2924123A patent/CA2924123C/en active Active
- 2014-11-25 JP JP2016535704A patent/JP6532465B2/ja active Active
-
2016
- 2016-03-09 IL IL24451316A patent/IL244513B/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
CA2924123A1 (en) | 2015-06-18 |
EP3041784A1 (en) | 2016-07-13 |
EP3041784B1 (en) | 2020-02-19 |
CN105612119B (zh) | 2018-03-02 |
KR102047869B1 (ko) | 2019-11-22 |
US20150162479A1 (en) | 2015-06-11 |
JP2017502328A (ja) | 2017-01-19 |
CN105612119A (zh) | 2016-05-25 |
KR20160079028A (ko) | 2016-07-05 |
IL244513B (en) | 2019-10-31 |
US9105800B2 (en) | 2015-08-11 |
IL244513A0 (en) | 2016-04-21 |
WO2015088771A1 (en) | 2015-06-18 |
CA2924123C (en) | 2018-02-27 |
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