JP6529436B2 - 光電変換素子、光電変換モジュール、並びに、太陽光発電システム - Google Patents
光電変換素子、光電変換モジュール、並びに、太陽光発電システム Download PDFInfo
- Publication number
- JP6529436B2 JP6529436B2 JP2015543929A JP2015543929A JP6529436B2 JP 6529436 B2 JP6529436 B2 JP 6529436B2 JP 2015543929 A JP2015543929 A JP 2015543929A JP 2015543929 A JP2015543929 A JP 2015543929A JP 6529436 B2 JP6529436 B2 JP 6529436B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- photoelectric conversion
- conversion element
- type
- amorphous silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000006243 chemical reaction Methods 0.000 title claims description 229
- 238000010248 power generation Methods 0.000 title claims description 18
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 216
- 239000000758 substrate Substances 0.000 claims description 156
- 239000013078 crystal Substances 0.000 claims description 132
- 239000004065 semiconductor Substances 0.000 claims description 81
- 229910052751 metal Inorganic materials 0.000 claims description 79
- 239000002184 metal Substances 0.000 claims description 78
- 239000010408 film Substances 0.000 description 185
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 136
- 229910052710 silicon Inorganic materials 0.000 description 136
- 239000010703 silicon Substances 0.000 description 136
- 238000009792 diffusion process Methods 0.000 description 62
- 238000000034 method Methods 0.000 description 38
- 238000004519 manufacturing process Methods 0.000 description 35
- 239000012535 impurity Substances 0.000 description 27
- 239000012071 phase Substances 0.000 description 25
- 238000010438 heat treatment Methods 0.000 description 24
- 238000002161 passivation Methods 0.000 description 21
- 239000010409 thin film Substances 0.000 description 21
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 16
- 238000009826 distribution Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 9
- 238000001039 wet etching Methods 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- 230000003667 anti-reflective effect Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 238000003491 array Methods 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 4
- 239000007790 solid phase Substances 0.000 description 4
- 238000012935 Averaging Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Natural products P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910001923 silver oxide Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001887 electron backscatter diffraction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S10/00—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Description
図1には、本発明の第1の実施の形態による光電変換素子10が示されている。光電変換素子10は、裏面電極型の太陽電池である。
図2A〜図2Fを参照しながら、光電変換素子10の製造方法について説明する。
光電変換素子10においては、電極22n、22pに含まれる複数の金属結晶粒の平均結晶粒径(以下、単に平均結晶粒径と称する)を電極22n、22pの厚みよりも大きくすることで、素子特性を向上させることができる。以下、この点について説明する。なお、熱処理等を実施して所望のサイズの金属結晶粒を成長させた後、電極22nおよび電極22pの上に、更に、導電膜を形成する場合については、所望のサイズの金属結晶粒が形成されている電極層と当該電極層の厚みとの関係が、上記の条件を満たせばよい。
結晶粒径=2×{(結晶粒の面積)/π}1/2・・・(1)
式(1)における「結晶粒の面積」は、電子後方散乱回折法を用いて測定したものである。式(1)は、結晶粒の面積を円の面積と仮定し、且つ、結晶粒径を円の直径と仮定して計算することを意味する。結晶粒径を求める際、シグマ3(Σ3)の対応粒界は、粒界として取り扱わないこととする。また、結晶方位のずれが5度以内である場合には、同一の結晶粒とみなすこととする。
セル抵抗={(電極22nとn型非晶質シリコン層20nとの接触抵抗)×(1+N)}+{(電極22pとp型非晶質シリコン層20pとの接触抵抗)×(1+N)/N}・・(2)
図9に示すように、電極22pとp型非晶質シリコン層20pとの接触面積が、電極22nとn型非晶質シリコン層20nとの接触面積の2倍以上であり、平均結晶粒径の平均値が、0.65μm以上であって、且つ、2.36μm以下である場合には、セル抵抗が、熱処理をしていない状態(平均結晶粒径の平均値=0.27μm)でのセル抵抗よりも低くなった。即ち、電極22pとp型非晶質シリコン層20pとの接触面積が、電極22nとn型非晶質シリコン層20nとの接触面積の2倍以上である場合、平均結晶粒径の平均値は、電極22n、22pの厚みの1.3倍以上、且つ、4.72倍以下であることが好ましい。この場合、熱処理をしていない状態でのセル抵抗よりも低いセル抵抗が得られ、素子特性が向上する。
本発明の第1の実施の形態による光電変換素子は、図12〜図14に示すような構成であってもよい。
図15は、本発明の第2の実施の形態による光電変換素子50の構成を示す断面図である。光電変換素子50は、シリコン基板52と、非晶質膜54と、非晶質膜56と、電極58と、絶縁膜60と、電極62とを含む。
図16A〜図16Gを参照しながら、光電変換素子50の製造方法について説明する。
図17は、第2の実施の形態の応用例に係る光電変換素子50Aの概略構成を示す断面図である。光電変換素子50Aは、光電変換素子50と比べて、非晶質膜54の代わりに、非晶質膜70及び非晶質膜72を備える。また、光電変換素子50Aは、光電変換素子50と比べて、電極58の代わりに、電極76を備える。
図18は、本発明の第3の実施の形態による光電変換素子80の概略構成を示す断面図である。光電変換素子80は、光電変換素子50のシリコン基板52をシリコン基板82に代え、絶縁膜60を非晶質膜84、86に代え、電極62を電極88に代えたものである。その他は、光電変換素子50と同じである。
図19A〜19Fを参照しながら、光電変換素子80の製造方法について説明する。
図20は、第3の実施の形態の応用例1に係る光電変換素子80Aの概略構成を示す縦断面図である。光電変換素子80Aは、光電変換素子80と比べて、非晶質膜54の代わりに、非晶質膜70及び非晶質膜72を備える。非晶質膜84の代わりに、非晶質膜94及び非晶質膜96を備える。電極58の代わりに、電極76を備える。電極88の代わりに、電極98を備える。
図21は、第3の実施の形態の応用例2に係る光電変換素子80Bの概略構成を示す縦断面図である。光電変換素子80Bは、光電変換素子80と比べて、非晶質膜54の代わりに、非晶質膜70及び非晶質膜72を備える。電極58の代わりに、電極76を備える。
図22は、この実施の形態による光電変換素子を備える光電変換モジュールの構成を示す概略図である。図22を参照して、光電変換モジュール1000は、複数の光電変換素子1001と、カバー1002と、出力端子1003,1004とを備える。
図23は、この実施の形態による光電変換素子を備える太陽光発電システムの構成を示す概略図である。図23を参照して、太陽光発電システム1100は、光電変換モジュールアレイ1101と、接続箱1102と、パワーコンディショナー1103と、分電盤1104と、電力メーター1105とを備える。
図25は、この実施の形態による光電変換素子を備える太陽光発電システムの構成を示す概略図である。図25を参照して、太陽光発電システム1200は、サブシステム1201〜120n(nは2以上の整数)と、パワーコンディショナー1211〜121nと、変圧器1221とを備える。太陽光発電システム1200は、図23に示す太陽光発電システム1100よりも規模が大きい太陽光発電システムである。
Claims (9)
- 半導体基板と、
第1導電型の第1非晶質シリコン層と、
前記第1導電型とは反対の第2導電型の第2非晶質シリコン層と、
前記第1非晶質シリコン層に接して形成された第1電極と、
前記第2非晶質シリコン層に接して形成された第2電極とを備え、
前記第1電極と前記第2電極のうち少なくとも一方の電極は、金属結晶粒を複数含み、
前記第1電極の面内方向における前記金属結晶粒の平均結晶粒径が前記第1電極の厚みより大きく、
前記第1導電型は、n型である、光電変換素子。 - 請求項1に記載の光電変換素子であって、
前記第1非晶質シリコン層及び前記第2非晶質シリコン層は、前記半導体基板における受光面とは反対側の裏面に設けられた、光電変換素子。 - 請求項1又は2に記載の光電変換素子であって、
前記金属結晶粒は、前記半導体基板の厚み方向に平行な結晶軸が<111>方向に優先配向している、光電変換素子。 - 請求項1〜3の何れか1項に記載の光電変換素子であって、
前記平均結晶粒径は、前記第1電極の厚みの1.34倍以上である、光電変換素子。 - 請求項1〜3の何れか1項に記載の光電変換素子であって、
前記第2導電型は、p型であり、
前記平均結晶粒径は、前記第2電極の厚みの1倍より大きく、2.44倍以下である、光電変換素子。 - 請求項1〜3の何れか1項に記載の光電変換素子であって、
前記半導体基板の導電型は、前記第1導電型であり、
前記第2電極と前記第2非晶質シリコン層との接触面積は、前記第1電極と前記第1非晶質シリコン層との接触面積の2倍以上であり、
前記第1電極の平均結晶粒径と前記第2電極の平均結晶粒径との平均値は、前記第1電極及び前記第2電極の厚みの1.3倍以上であって、且つ、4.72倍以下である、光電変換素子。 - 請求項1〜3の何れか1項に記載の光電変換素子であって、
前記半導体基板の導電型は、前記第1導電型であり、
前記第2電極と前記第2非晶質シリコン層との接触面積は、前記第1電極と前記第1非晶質シリコン層との接触面積の1倍以上であり、
前記第1電極の平均結晶粒径と前記第2電極の平均結晶粒径との平均値は、第1電極及び第2電極の厚みの1.3倍以上であって、且つ、4倍以下である、光電変換素子。 - 請求項1〜7の何れか1項に記載の光電変換素子を少なくとも1つ含む光電変換モジュール。
- 請求項8に記載の光電変換モジュールを少なくとも1つ含む太陽光発電システム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013222816 | 2013-10-25 | ||
JP2013222816 | 2013-10-25 | ||
PCT/JP2014/078372 WO2015060434A1 (ja) | 2013-10-25 | 2014-10-24 | 光電変換素子、光電変換モジュール、並びに、太陽光発電システム |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2015060434A1 JPWO2015060434A1 (ja) | 2017-03-09 |
JP6529436B2 true JP6529436B2 (ja) | 2019-06-12 |
Family
ID=52993019
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015543929A Active JP6529436B2 (ja) | 2013-10-25 | 2014-10-24 | 光電変換素子、光電変換モジュール、並びに、太陽光発電システム |
Country Status (4)
Country | Link |
---|---|
US (1) | US11121270B2 (ja) |
JP (1) | JP6529436B2 (ja) |
CN (1) | CN105659389B (ja) |
WO (1) | WO2015060434A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6780421B2 (ja) * | 2016-03-01 | 2020-11-04 | ソニー株式会社 | 撮像素子、積層型撮像素子及び固体撮像装置、並びに、固体撮像装置の駆動方法 |
US10361353B2 (en) * | 2018-02-08 | 2019-07-23 | Intel Corporation | Sidewall metal spacers for forming metal gates in quantum devices |
CN110690296A (zh) * | 2019-10-12 | 2020-01-14 | 通威太阳能(眉山)有限公司 | 一种高效背钝化晶硅太阳能电池及其制备方法 |
KR102514710B1 (ko) * | 2021-05-07 | 2023-03-29 | 한국과학기술원 | 초소형 온칩 광 센싱을 위한 광 검출 소자 및 goi 디바이스, 및 그의 제조 방법 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5928385A (ja) * | 1982-08-10 | 1984-02-15 | Komatsu Denshi Kinzoku Kk | 太陽電池の製造方法 |
JPH01125988A (ja) * | 1987-11-11 | 1989-05-18 | Hitachi Ltd | 太陽電池素子の製造方法 |
JP4155899B2 (ja) | 2003-09-24 | 2008-09-24 | 三洋電機株式会社 | 光起電力素子の製造方法 |
US7199395B2 (en) * | 2003-09-24 | 2007-04-03 | Sanyo Electric Co., Ltd. | Photovoltaic cell and method of fabricating the same |
US20070169808A1 (en) * | 2006-01-26 | 2007-07-26 | Kherani Nazir P | Solar cell |
JP2007281156A (ja) | 2006-04-06 | 2007-10-25 | Japan Advanced Institute Of Science & Technology Hokuriku | 裏面電極型半導体へテロ接合太陽電池ならびにその製造方法と製造装置 |
US7902540B2 (en) * | 2008-05-21 | 2011-03-08 | International Business Machines Corporation | Fast P-I-N photodetector with high responsitivity |
KR101142861B1 (ko) | 2009-02-04 | 2012-05-08 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
US8383451B2 (en) * | 2009-03-09 | 2013-02-26 | Aqt Solar, Inc. | Deposition of photovoltaic thin films by plasma spray deposition |
JP5258707B2 (ja) * | 2009-08-26 | 2013-08-07 | 株式会社東芝 | 半導体発光素子 |
CN101694835A (zh) * | 2009-10-13 | 2010-04-14 | 上海宏力半导体制造有限公司 | 金属层的制造方法 |
JP5213188B2 (ja) | 2010-04-27 | 2013-06-19 | シャープ株式会社 | 裏面電極型太陽電池、および裏面電極型太陽電池の製造方法 |
US8633379B2 (en) * | 2010-08-17 | 2014-01-21 | Lg Electronics Inc. | Solar cell |
CN102790009B (zh) * | 2011-05-16 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | 降低铜电镀工艺中边缘效应的方法及铜互连结构制造方法 |
JP5863391B2 (ja) * | 2011-10-28 | 2016-02-16 | 株式会社カネカ | 結晶シリコン系太陽電池の製造方法 |
JP2013115262A (ja) * | 2011-11-29 | 2013-06-10 | Sharp Corp | 光電変換素子 |
WO2013145008A1 (ja) * | 2012-03-29 | 2013-10-03 | 三菱電機株式会社 | 光起電力素子およびその製造方法、太陽電池モジュール |
CN102832342A (zh) * | 2012-09-14 | 2012-12-19 | 中国科学院上海微系统与信息技术研究所 | 含有TiSiN材料层的相变存储单元及其制备方法 |
US10014425B2 (en) * | 2012-09-28 | 2018-07-03 | Sunpower Corporation | Spacer formation in a solar cell using oxygen ion implantation |
-
2014
- 2014-10-24 WO PCT/JP2014/078372 patent/WO2015060434A1/ja active Application Filing
- 2014-10-24 JP JP2015543929A patent/JP6529436B2/ja active Active
- 2014-10-24 US US15/031,823 patent/US11121270B2/en active Active
- 2014-10-24 CN CN201480058683.4A patent/CN105659389B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN105659389A (zh) | 2016-06-08 |
US20160247949A1 (en) | 2016-08-25 |
WO2015060434A1 (ja) | 2015-04-30 |
CN105659389B (zh) | 2018-10-19 |
US11121270B2 (en) | 2021-09-14 |
JPWO2015060434A1 (ja) | 2017-03-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6529437B2 (ja) | 光電変換素子、光電変換モジュール、並びに、太陽光発電システム | |
US20180233621A1 (en) | Solar cell and method for manufacturing the same | |
JP6599769B2 (ja) | 光電変換装置 | |
CN114242803B (zh) | 太阳能电池及其制备方法、光伏组件 | |
US20150270415A1 (en) | Semiconductor device and method for manufacturing the same | |
US20100243042A1 (en) | High-efficiency photovoltaic cells | |
JP2008021993A (ja) | 全背面接点構成を含む光起電力デバイス及び関連する方法 | |
KR101886818B1 (ko) | 이종 접합 실리콘 태양 전지의 제조 방법 | |
US20160268462A1 (en) | Photoelectric conversion element | |
JP6529436B2 (ja) | 光電変換素子、光電変換モジュール、並びに、太陽光発電システム | |
KR20120011337A (ko) | 태양 전지 및 그 제조 방법 | |
US10516066B2 (en) | Photovoltaic conversion device, photovoltaic module, and solar power generation system | |
EP3371833A1 (en) | Photovoltaic device and method for manufacturing the same | |
US20160268450A1 (en) | Photoelectric conversion element | |
US20150372165A1 (en) | Photoelectric converting element | |
TWI608629B (zh) | 太陽能電池及其製造方法 | |
JP6564767B2 (ja) | 光電変換装置 | |
KR20130057286A (ko) | 광기전력소자 및 제조방법 | |
JP7346050B2 (ja) | 太陽電池セルおよび太陽電池モジュール | |
CN107667435B (zh) | 光电转换装置 | |
Kovačević et al. | Interdigitated‐back‐contacted silicon heterojunction solar cells featuring novel MoOx‐based contact stacks | |
Lin et al. | The influence of minority carrier lifetime on characteristics of heterojunction back contact silicon solar cell | |
Munoz et al. | Progress in scaling-up silicon heterojunction solar cells: 16% efficiency obtained on 125 PS monocrystalline silicon |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171017 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20171017 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180807 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181004 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181211 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190206 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190423 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190514 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6529436 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |