JP6521799B2 - ハロゲン除去方法および半導体装置の製造方法 - Google Patents

ハロゲン除去方法および半導体装置の製造方法 Download PDF

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JP6521799B2
JP6521799B2 JP2015170873A JP2015170873A JP6521799B2 JP 6521799 B2 JP6521799 B2 JP 6521799B2 JP 2015170873 A JP2015170873 A JP 2015170873A JP 2015170873 A JP2015170873 A JP 2015170873A JP 6521799 B2 JP6521799 B2 JP 6521799B2
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film
fluorine
halogen
organic solvent
low
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JP2017050339A (ja
JP2017050339A5 (enExample
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竜一 浅子
竜一 浅子
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2015170873A priority Critical patent/JP6521799B2/ja
Priority to KR1020160106916A priority patent/KR101908192B1/ko
Priority to US15/245,335 priority patent/US9892934B2/en
Publication of JP2017050339A publication Critical patent/JP2017050339A/ja
Publication of JP2017050339A5 publication Critical patent/JP2017050339A5/ja
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    • H10P50/269—
    • H10P50/242—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32138—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only pre- or post-treatments, e.g. anti-corrosion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
    • H10P14/6514—
    • H10P14/6903—
    • H10P95/00—
    • H10P95/90—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/011—Groups of the periodic table
    • H01L2924/01111—Halogens

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
JP2015170873A 2015-08-31 2015-08-31 ハロゲン除去方法および半導体装置の製造方法 Active JP6521799B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2015170873A JP6521799B2 (ja) 2015-08-31 2015-08-31 ハロゲン除去方法および半導体装置の製造方法
KR1020160106916A KR101908192B1 (ko) 2015-08-31 2016-08-23 할로겐 제거 방법 및 반도체 장치의 제조 방법
US15/245,335 US9892934B2 (en) 2015-08-31 2016-08-24 Method for removing halogen and method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015170873A JP6521799B2 (ja) 2015-08-31 2015-08-31 ハロゲン除去方法および半導体装置の製造方法

Publications (3)

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JP2017050339A JP2017050339A (ja) 2017-03-09
JP2017050339A5 JP2017050339A5 (enExample) 2018-07-26
JP6521799B2 true JP6521799B2 (ja) 2019-05-29

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US (1) US9892934B2 (enExample)
JP (1) JP6521799B2 (enExample)
KR (1) KR101908192B1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019175704A1 (ja) * 2018-03-16 2019-09-19 株式会社半導体エネルギー研究所 電気モジュール、表示パネル、表示装置、入出力装置、情報処理装置、電気モジュールの作製方法
JP7486601B2 (ja) 2020-11-09 2024-05-17 東京エレクトロン株式会社 基板処理方法および基板処理装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0325934A (ja) 1989-06-23 1991-02-04 Nec Corp 固体表面に吸着したハロゲン含有層の除去方法
JPH0748482B2 (ja) * 1989-10-14 1995-05-24 大日本スクリーン製造株式会社 酸化膜等の被膜除去処理後における基板表面の洗浄方法
JPH05326477A (ja) 1992-05-26 1993-12-10 Ulvac Japan Ltd 半導体基板表面のハロゲン除去方法
JPH07321117A (ja) * 1994-05-25 1995-12-08 Toshiba Corp 半導体基板の処理方法
JP3526961B2 (ja) * 1995-05-24 2004-05-17 松下電器産業株式会社 半導体装置の製造方法
US6140243A (en) 1996-12-12 2000-10-31 Texas Instruments Incorporated Low temperature process for post-etch defluoridation of metals
JP3932636B2 (ja) * 1997-12-08 2007-06-20 ソニー株式会社 半導体装置の製造方法
JP4482217B2 (ja) * 2000-10-25 2010-06-16 ソニー株式会社 半導体装置用洗浄剤及び半導体装置の洗浄方法
JP2005026277A (ja) * 2003-06-30 2005-01-27 Sony Corp 低誘電率膜の成膜方法
US7713885B2 (en) * 2005-05-11 2010-05-11 Micron Technology, Inc. Methods of etching oxide, reducing roughness, and forming capacitor constructions
EP1893355A1 (en) * 2005-06-16 2008-03-05 Advanced Technology Materials, Inc. Dense fluid compositions for removal of hardened photoresist, post-etch residue and/or bottom anti-reflective coating layers
JP2007220882A (ja) * 2006-02-16 2007-08-30 Fujitsu Ltd 埋込配線の形成方法
WO2007114448A1 (ja) * 2006-04-05 2007-10-11 Asahi Glass Company, Limited デバイス基板の洗浄方法
JP2009010043A (ja) * 2007-06-26 2009-01-15 Tokyo Electron Ltd 基板処理方法，基板処理装置，記録媒体
US8153533B2 (en) 2008-09-24 2012-04-10 Lam Research Methods and systems for preventing feature collapse during microelectronic topography fabrication
JP5064423B2 (ja) * 2009-02-16 2012-10-31 Ｄｏｗａエレクトロニクス株式会社 銀の粒子粉末および分散液

Also Published As

Publication number Publication date
KR101908192B1 (ko) 2018-10-15
US20170062237A1 (en) 2017-03-02
JP2017050339A (ja) 2017-03-09
KR20170026180A (ko) 2017-03-08
US9892934B2 (en) 2018-02-13

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