JP6518788B2 - 半導体デバイス用処理液の保管方法、処理液収容体 - Google Patents

半導体デバイス用処理液の保管方法、処理液収容体 Download PDF

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Publication number
JP6518788B2
JP6518788B2 JP2017555097A JP2017555097A JP6518788B2 JP 6518788 B2 JP6518788 B2 JP 6518788B2 JP 2017555097 A JP2017555097 A JP 2017555097A JP 2017555097 A JP2017555097 A JP 2017555097A JP 6518788 B2 JP6518788 B2 JP 6518788B2
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JP
Japan
Prior art keywords
storage container
treatment liquid
container
semiconductor device
processing solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2017555097A
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English (en)
Japanese (ja)
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JPWO2017099121A1 (ja
Inventor
祐継 室
祐継 室
智美 高橋
智美 高橋
智威 高橋
智威 高橋
清水　哲也
哲也 清水
朗子 吉井
朗子 吉井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
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Fujifilm Corp
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Publication date
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Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of JPWO2017099121A1 publication Critical patent/JPWO2017099121A1/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2017555097A 2015-12-11 2016-12-07 半導体デバイス用処理液の保管方法、処理液収容体 Active JP6518788B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015242707 2015-12-11
JP2015242707 2015-12-11
PCT/JP2016/086368 WO2017099121A1 (ja) 2015-12-11 2016-12-07 半導体デバイス用処理液の保管方法、処理液収容体

Publications (2)

Publication Number Publication Date
JPWO2017099121A1 JPWO2017099121A1 (ja) 2018-08-30
JP6518788B2 true JP6518788B2 (ja) 2019-05-22

Family

ID=59013161

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017555097A Active JP6518788B2 (ja) 2015-12-11 2016-12-07 半導体デバイス用処理液の保管方法、処理液収容体

Country Status (4)

Country Link
JP (1) JP6518788B2 (ko)
KR (1) KR102067444B1 (ko)
TW (1) TWI716510B (ko)
WO (1) WO2017099121A1 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110770137B (zh) * 2017-07-18 2021-08-03 富士胶片株式会社 容器、容器的制造方法及药液收容体
JPWO2020071042A1 (ja) * 2018-10-03 2021-09-24 富士フイルム株式会社 薬液、薬液収容体、レジストパターン形成方法、半導体チップの製造方法
CN114746536B (zh) * 2019-11-25 2024-01-09 株式会社力森诺科 分解清洗组合物的制造方法
WO2021176913A1 (ja) * 2020-03-04 2021-09-10 富士フイルム株式会社 処理液、処理液収容体

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4582602B2 (ja) * 2000-03-24 2010-11-17 ビーエーエスエフ ソシエタス・ヨーロピア ヒドロキシルアミン水溶液およびその製造方法
US7166419B2 (en) * 2002-09-26 2007-01-23 Air Products And Chemicals, Inc. Compositions substrate for removing etching residue and use thereof
JP2005236050A (ja) * 2004-02-19 2005-09-02 Az Electronic Materials Kk 電子デバイス製造用薬液の供給装置および容器交換方法
US8357646B2 (en) * 2008-03-07 2013-01-22 Air Products And Chemicals, Inc. Stripper for dry film removal
WO2012090669A1 (ja) * 2010-12-28 2012-07-05 Jsr株式会社 電極用バインダー組成物、電極用スラリー、電極、電気化学デバイス、ならびに電極用バインダー組成物の製造方法および保管方法
US8889609B2 (en) * 2011-03-16 2014-11-18 Air Products And Chemicals, Inc. Cleaning formulations and method of using the cleaning formulations

Also Published As

Publication number Publication date
WO2017099121A1 (ja) 2017-06-15
KR20180074755A (ko) 2018-07-03
TWI716510B (zh) 2021-01-21
TW201732914A (zh) 2017-09-16
KR102067444B1 (ko) 2020-01-17
JPWO2017099121A1 (ja) 2018-08-30

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