JP6516603B2 - エッチング方法及びエッチング装置 - Google Patents
エッチング方法及びエッチング装置 Download PDFInfo
- Publication number
- JP6516603B2 JP6516603B2 JP2015140232A JP2015140232A JP6516603B2 JP 6516603 B2 JP6516603 B2 JP 6516603B2 JP 2015140232 A JP2015140232 A JP 2015140232A JP 2015140232 A JP2015140232 A JP 2015140232A JP 6516603 B2 JP6516603 B2 JP 6516603B2
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- JP
- Japan
- Prior art keywords
- gas
- etching
- flow rate
- hydrogen bromide
- etching method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005530 etching Methods 0.000 title claims description 120
- 238000000034 method Methods 0.000 title claims description 65
- 239000007789 gas Substances 0.000 claims description 164
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims description 87
- 229910000042 hydrogen bromide Inorganic materials 0.000 claims description 40
- 230000008569 process Effects 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 10
- 229910001882 dioxygen Inorganic materials 0.000 claims description 10
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims description 10
- 230000003247 decreasing effect Effects 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 21
- 229920005591 polysilicon Polymers 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 11
- 230000004048 modification Effects 0.000 description 11
- 238000012986 modification Methods 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 9
- 239000003507 refrigerant Substances 0.000 description 7
- 230000006870 function Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 229910003691 SiBr Inorganic materials 0.000 description 3
- 229910020177 SiOF Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 239000002826 coolant Substances 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012267 brine Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Landscapes
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/133,314 US9865471B2 (en) | 2015-04-30 | 2016-04-20 | Etching method and etching apparatus |
| TW105113217A TWI685014B (zh) | 2015-04-30 | 2016-04-28 | 蝕刻方法及蝕刻裝置 |
| KR1020160052950A KR102436237B1 (ko) | 2015-04-30 | 2016-04-29 | 에칭 방법 및 에칭 장치 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015093509 | 2015-04-30 | ||
| JP2015093509 | 2015-04-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016213427A JP2016213427A (ja) | 2016-12-15 |
| JP6516603B2 true JP6516603B2 (ja) | 2019-05-22 |
Family
ID=57551758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015140232A Active JP6516603B2 (ja) | 2015-04-30 | 2015-07-14 | エッチング方法及びエッチング装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP6516603B2 (zh) |
| TW (1) | TWI685014B (zh) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6945388B2 (ja) * | 2017-08-23 | 2021-10-06 | 東京エレクトロン株式会社 | エッチング方法及びエッチング処理装置 |
| JP7158252B2 (ja) * | 2018-02-15 | 2022-10-21 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
| CN111066129B (zh) * | 2018-06-04 | 2024-04-05 | 东京毅力科创株式会社 | 蚀刻处理方法和蚀刻处理装置 |
| CN111383880B (zh) * | 2018-12-27 | 2023-03-31 | 中微半导体设备(上海)股份有限公司 | 一种等离子体处理器的安装结构及相应的等离子体处理器 |
| CN112466749B (zh) | 2020-11-16 | 2023-11-14 | 北京北方华创微电子装备有限公司 | 硅片的刻蚀方法 |
| JP7529902B2 (ja) * | 2021-04-08 | 2024-08-06 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理システム |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2002367178A1 (en) * | 2001-12-27 | 2003-07-15 | Kabushiki Kaisha Toshiba | Etching method and plasma etching device |
| JP4184851B2 (ja) * | 2003-03-31 | 2008-11-19 | 東京エレクトロン株式会社 | プラズマ処理方法 |
| US8382999B2 (en) * | 2009-03-26 | 2013-02-26 | Applied Materials, Inc. | Pulsed plasma high aspect ratio dielectric process |
| JP5823160B2 (ja) * | 2011-05-11 | 2015-11-25 | 東京エレクトロン株式会社 | 堆積物除去方法 |
| JP2014120661A (ja) * | 2012-12-18 | 2014-06-30 | Tokyo Electron Ltd | ダミーゲートを形成する方法 |
| JP6027492B2 (ja) * | 2013-05-22 | 2016-11-16 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
| JP6180824B2 (ja) * | 2013-07-02 | 2017-08-16 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
| JP6173889B2 (ja) * | 2013-11-28 | 2017-08-02 | ソニーセミコンダクタソリューションズ株式会社 | シミュレーション方法、シミュレーションプログラム、加工制御システム、シミュレータ、プロセス設計方法およびマスク設計方法 |
-
2015
- 2015-07-14 JP JP2015140232A patent/JP6516603B2/ja active Active
-
2016
- 2016-04-28 TW TW105113217A patent/TWI685014B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI685014B (zh) | 2020-02-11 |
| JP2016213427A (ja) | 2016-12-15 |
| TW201707041A (zh) | 2017-02-16 |
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