JP6513889B2 - レーザ加工装置、積層体の加工装置およびレーザ加工方法 - Google Patents

レーザ加工装置、積層体の加工装置およびレーザ加工方法 Download PDF

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Publication number
JP6513889B2
JP6513889B2 JP2018548302A JP2018548302A JP6513889B2 JP 6513889 B2 JP6513889 B2 JP 6513889B2 JP 2018548302 A JP2018548302 A JP 2018548302A JP 2018548302 A JP2018548302 A JP 2018548302A JP 6513889 B2 JP6513889 B2 JP 6513889B2
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Prior art keywords
workpiece
roller
linear beam
laser
length
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Expired - Fee Related
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JP2018548302A
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Japanese (ja)
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JPWO2018083572A1 (ja
Inventor
山崎　舜平
舜平 山崎
楠本　直人
直人 楠本
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0738—Shaping the laser spot into a linear shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0823—Devices involving rotation of the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/14—Semiconductor wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
    • B32B43/006—Delaminating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Recrystallisation Techniques (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
JP2018548302A 2016-11-03 2017-10-26 レーザ加工装置、積層体の加工装置およびレーザ加工方法 Expired - Fee Related JP6513889B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2016215738 2016-11-03
JP2016215738 2016-11-03
JP2016222194 2016-11-15
JP2016222194 2016-11-15
PCT/IB2017/056639 WO2018083572A1 (ja) 2016-11-03 2017-10-26 レーザ加工装置、積層体の加工装置およびレーザ加工方法

Related Child Applications (1)

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JP2019074975A Division JP2019123019A (ja) 2016-11-03 2019-04-10 レーザ加工装置

Publications (2)

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JPWO2018083572A1 JPWO2018083572A1 (ja) 2019-04-18
JP6513889B2 true JP6513889B2 (ja) 2019-05-15

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JP2018548302A Expired - Fee Related JP6513889B2 (ja) 2016-11-03 2017-10-26 レーザ加工装置、積層体の加工装置およびレーザ加工方法
JP2019074975A Withdrawn JP2019123019A (ja) 2016-11-03 2019-04-10 レーザ加工装置
JP2022080748A Withdrawn JP2022105609A (ja) 2016-11-03 2022-05-17 レーザ加工装置

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Country Status (5)

Country Link
US (2) US11433486B2 (enExample)
JP (3) JP6513889B2 (enExample)
KR (2) KR102446583B1 (enExample)
CN (1) CN109922919A (enExample)
WO (1) WO2018083572A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7562029B2 (ja) 2023-01-16 2024-10-04 株式会社アマダ レーザ加工装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6513889B2 (ja) * 2016-11-03 2019-05-15 株式会社半導体エネルギー研究所 レーザ加工装置、積層体の加工装置およびレーザ加工方法
DE202019005592U1 (de) * 2019-01-22 2021-02-08 Hegla Gmbh & Co. Kg Vorrichtung zum Bearbeiten und zum Trennen einer Verbundsicherheitsglastafel
JP7196718B2 (ja) * 2019-03-26 2022-12-27 ウシオ電機株式会社 微細穴光学素子の製造方法および改質装置
JP7645533B2 (ja) * 2021-03-19 2025-03-14 株式会社片岡製作所 レーザ処理装置、レーザ処理方法
CN113421836B (zh) * 2021-05-17 2023-03-21 中国科学院微电子研究所 一种激光退火设备及激光退火方法
CN113618251A (zh) * 2021-08-04 2021-11-09 昆山燎原自动化设备有限责任公司 一种基板划线的激光加工设备
TWI850612B (zh) * 2021-12-17 2024-08-01 財團法人工業技術研究院 使用能量束的表面加工設備及表面加工方法

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3549733A (en) * 1968-12-04 1970-12-22 Du Pont Method of producing polymeric printing plates
US5128512A (en) * 1990-07-26 1992-07-07 Masahiro Seki Laser beam machining device
KR100269350B1 (ko) * 1991-11-26 2000-10-16 구본준 박막트랜지스터의제조방법
JPH07185867A (ja) 1993-12-28 1995-07-25 Ishikawajima Harima Heavy Ind Co Ltd レーザ加工装置
KR100321541B1 (ko) 1994-03-09 2002-06-20 야마자끼 순페이 능동 매트릭스 디스플레이 장치의 작동 방법
JP3054310B2 (ja) 1994-03-09 2000-06-19 株式会社半導体エネルギー研究所 半導体デバイスのレーザー処理方法
US6723590B1 (en) 1994-03-09 2004-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for laser-processing semiconductor device
JPH10328867A (ja) 1997-06-05 1998-12-15 Mitsubishi Electric Corp レーザビーム加工装置およびレーザビーム加工装置用の焦点位置決め治具およびレーザビーム集光直径測定治具
JP3800795B2 (ja) 1998-02-23 2006-07-26 富士ゼロックス株式会社 レーザ加工条件自動設定方法およびレーザ加工条件自動設定装置
JP2000066133A (ja) * 1998-06-08 2000-03-03 Sanyo Electric Co Ltd レ―ザ―光照射装置
JP2000171421A (ja) 1998-12-09 2000-06-23 Shimadzu Corp マッピング分析方法
US6535535B1 (en) * 1999-02-12 2003-03-18 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, laser irradiation apparatus, and semiconductor device
JP2000252228A (ja) * 1999-03-04 2000-09-14 Toshiba Corp レーザアニール装置
JP4531898B2 (ja) 1999-12-28 2010-08-25 株式会社日本製鋼所 レーザアニール方法及び装置
JP2002252181A (ja) * 2001-02-22 2002-09-06 Sanyo Electric Co Ltd 多結晶半導体層の製造方法及びレーザアニール装置
US7223306B2 (en) * 2002-09-17 2007-05-29 Semiconductor Energy Laboratory Co., Ltd. Laser apparatus, laser irradiation method, and manufacturing method of semiconductor device
US7064089B2 (en) * 2002-12-10 2006-06-20 Semiconductor Energy Laboratory Co., Ltd. Plasma treatment apparatus and method for plasma treatment
JP2005000952A (ja) 2003-06-12 2005-01-06 Nippon Sheet Glass Co Ltd レーザー加工方法及びレーザー加工装置
US6980279B2 (en) * 2004-01-22 2005-12-27 Nikon Corporation Interferometer system for measuring a height of wafer stage
US8525075B2 (en) * 2004-05-06 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
JP4683973B2 (ja) 2005-03-28 2011-05-18 三星ダイヤモンド工業株式会社 レーザー加工装置およびレーザー光の位置合わせ方法。
JP2007012733A (ja) 2005-06-29 2007-01-18 Seiko Epson Corp 基板の分割方法
CN101331592B (zh) 2005-12-16 2010-06-16 株式会社半导体能源研究所 激光照射设备、激光照射方法和半导体装置的制造方法
TW200741883A (en) * 2006-04-21 2007-11-01 Zeiss Carl Laser Optics Gmbh Apparatus for laser annealing of large substrates and method for laser annealing for large substrates
JP5048978B2 (ja) * 2006-07-14 2012-10-17 株式会社ディスコ レーザ加工装置
JP2008296269A (ja) 2007-06-02 2008-12-11 Enshu Ltd レーザ加工機の多機能加工制御方法とレーザ加工機の多機能加工制御装置
JP5446325B2 (ja) 2009-03-03 2014-03-19 豊田合成株式会社 レーザ加工方法および化合物半導体発光素子の製造方法
DE112010000963T5 (de) 2009-03-03 2012-08-02 Hitachi Via Mechanics, Ltd. Verfahren und Vorrichtung zum maschinellen Bearbeiten einer Dünnfilmschicht eines Werkstücks
US8605240B2 (en) * 2010-05-20 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and manufacturing method thereof
US8207009B2 (en) * 2011-04-19 2012-06-26 Primestar Solar, Inc. Methods of temporally varying the laser intensity during scribing a photovoltaic device
US8546805B2 (en) * 2012-01-27 2013-10-01 Ultratech, Inc. Two-beam laser annealing with improved temperature performance
KR102079188B1 (ko) 2012-05-09 2020-02-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 전자 기기
JP6008388B2 (ja) 2012-05-16 2016-10-19 Ｌｕｍｉｏｔｅｃ株式会社 有機ｅｌパネルの製造方法及び有機ｅｌ素子の製造装置
JP5717146B2 (ja) * 2012-10-23 2015-05-13 株式会社日本製鋼所 レーザラインビーム改善装置およびレーザ処理装置
KR102006878B1 (ko) 2012-12-27 2019-08-05 삼성디스플레이 주식회사 기판 검사식각 복합장치 및 이를 구비하는 기판 처리장치
JP5843292B2 (ja) 2013-03-21 2016-01-13 株式会社日本製鋼所 アニール処理半導体基板の製造方法、走査装置およびレーザ処理装置
WO2015029806A1 (en) 2013-08-30 2015-03-05 Semiconductor Energy Laboratory Co., Ltd. Processing apparatus and processing method of stack
CN106597697A (zh) 2013-12-02 2017-04-26 株式会社半导体能源研究所 显示装置及其制造方法
KR20170037633A (ko) * 2014-07-21 2017-04-04 어플라이드 머티어리얼스, 인코포레이티드 스캐닝형 펄스 어닐링 장치 및 방법
JP2016099308A (ja) 2014-11-26 2016-05-30 株式会社日立ハイテクサイエンス 蛍光ｘ線分析装置及び蛍光ｘ線分析方法
JP6465712B2 (ja) 2015-03-25 2019-02-06 住友重機械工業株式会社 レーザ加工装置及びレーザ加工方法
JP6513889B2 (ja) * 2016-11-03 2019-05-15 株式会社半導体エネルギー研究所 レーザ加工装置、積層体の加工装置およびレーザ加工方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7562029B2 (ja) 2023-01-16 2024-10-04 株式会社アマダ レーザ加工装置

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Publication number Publication date
KR102634724B1 (ko) 2024-02-06
US20190283186A1 (en) 2019-09-19
WO2018083572A1 (ja) 2018-05-11
JP2022105609A (ja) 2022-07-14
JP2019123019A (ja) 2019-07-25
KR20220129691A (ko) 2022-09-23
KR20190082785A (ko) 2019-07-10
CN109922919A (zh) 2019-06-21
JPWO2018083572A1 (ja) 2019-04-18
US11433486B2 (en) 2022-09-06
US20230001517A1 (en) 2023-01-05
KR102446583B1 (ko) 2022-09-22

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