JP6511146B2 - 硬化膜の製造方法、再配線層用層間絶縁膜の製造方法、および、半導体デバイスの製造方法 - Google Patents

硬化膜の製造方法、再配線層用層間絶縁膜の製造方法、および、半導体デバイスの製造方法 Download PDF

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JP6511146B2
JP6511146B2 JP2017537787A JP2017537787A JP6511146B2 JP 6511146 B2 JP6511146 B2 JP 6511146B2 JP 2017537787 A JP2017537787 A JP 2017537787A JP 2017537787 A JP2017537787 A JP 2017537787A JP 6511146 B2 JP6511146 B2 JP 6511146B2
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cured film
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compound
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JPWO2017038598A1 (ja
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一郎 小山
一郎 小山
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Fujifilm Corp
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1003—Preparatory processes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/22—Polybenzoxazoles
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/12—Chemical modification
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Materials For Photolithography (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
JP2017537787A 2015-08-28 2016-08-25 硬化膜の製造方法、再配線層用層間絶縁膜の製造方法、および、半導体デバイスの製造方法 Active JP6511146B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015169719 2015-08-28
JP2015169719 2015-08-28
PCT/JP2016/074742 WO2017038598A1 (ja) 2015-08-28 2016-08-25 硬化膜の製造方法、再配線層用層間絶縁膜の製造方法、および、半導体デバイスの製造方法

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JPWO2017038598A1 JPWO2017038598A1 (ja) 2018-06-28
JP6511146B2 true JP6511146B2 (ja) 2019-05-15

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JP (1) JP6511146B2 (ko)
KR (1) KR102028939B1 (ko)
TW (1) TWI694101B (ko)
WO (1) WO2017038598A1 (ko)

Families Citing this family (12)

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Publication number Priority date Publication date Assignee Title
WO2018181182A1 (ja) * 2017-03-29 2018-10-04 富士フイルム株式会社 感光性樹脂組成物、硬化膜、積層体、硬化膜の製造方法および半導体デバイス
KR102216172B1 (ko) * 2017-07-14 2021-02-15 주식회사 엘지화학 절연층 제조방법 및 반도체 패키지 제조방법
KR102089286B1 (ko) 2018-01-02 2020-03-16 삼성전자주식회사 포토레지스트 현상액 조성물 및 이를 이용한 반도체 패키지 제조방법
CN113168093B (zh) * 2018-12-05 2024-04-30 富士胶片株式会社 图案形成方法、感光性树脂组合物、固化膜、层叠体及器件
JP7431241B2 (ja) 2019-07-29 2024-02-14 旭化成株式会社 ネガ型感光性樹脂組成物、ポリイミドの製造方法、硬化レリーフパターンの製造方法、及び半導体装置
TW202128839A (zh) 2019-11-21 2021-08-01 日商富士軟片股份有限公司 圖案形成方法、光硬化性樹脂組成物、積層體的製造方法及電子元件的製造方法
CN116888187A (zh) * 2021-02-12 2023-10-13 富士胶片株式会社 树脂组合物、固化物、层叠体、固化物的制造方法及半导体器件、以及环化树脂的前驱体
TW202248755A (zh) 2021-03-22 2022-12-16 日商富士軟片股份有限公司 負型感光性樹脂組成物、硬化物、積層體、硬化物的製造方法以及半導體元件
CN113416493B (zh) * 2021-06-02 2022-09-20 万华化学集团电子材料有限公司 存储稳定的硅片抛光组合物的制备方法、组合物及其使用方法
JP7259141B1 (ja) 2021-08-31 2023-04-17 富士フイルム株式会社 硬化物の製造方法、積層体の製造方法、及び、半導体デバイスの製造方法、並びに、処理液
WO2023120037A1 (ja) 2021-12-23 2023-06-29 富士フイルム株式会社 接合体の製造方法、接合体、積層体の製造方法、積層体、デバイスの製造方法、及び、デバイス、並びに、ポリイミド含有前駆体部形成用組成物
WO2024010026A1 (ja) * 2022-07-08 2024-01-11 富士フイルム株式会社 樹脂組成物、硬化物、積層体、硬化物の製造方法、積層体の製造方法、半導体デバイスの製造方法、及び、半導体デバイス

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Publication number Priority date Publication date Assignee Title
JP4984457B2 (ja) * 2005-08-26 2012-07-25 富士ゼロックス株式会社 ポリアミック酸組成物、ポリイミド無端ベルト、及び画像形成装置
JP2007056196A (ja) * 2005-08-26 2007-03-08 Tokyo Institute Of Technology ポリイミド前駆体組成物、ポリイミド膜の製造方法及び半導体装置
WO2009133843A1 (ja) * 2008-04-28 2009-11-05 日本ゼオン株式会社 感放射線樹脂組成物、積層体及びその製造方法ならびに半導体デバイス
TWI486335B (zh) * 2011-12-29 2015-06-01 Eternal Materials Co Ltd 鹼產生劑
TWI671343B (zh) * 2014-06-27 2019-09-11 日商富士軟片股份有限公司 熱硬化性樹脂組成物、硬化膜、硬化膜的製造方法以及半導體裝置

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TWI694101B (zh) 2020-05-21
WO2017038598A1 (ja) 2017-03-09
JPWO2017038598A1 (ja) 2018-06-28
KR20180034523A (ko) 2018-04-04
TW201714934A (zh) 2017-05-01
KR102028939B1 (ko) 2019-10-07

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