JP6511142B2 - 電圧刺激の変化を用いたナノポアベースの配列決定 - Google Patents
電圧刺激の変化を用いたナノポアベースの配列決定 Download PDFInfo
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Description
Claims (23)
- ナノポアと相互作用する分子を分析する方法であって、前記ナノポアが膜内に挿入されるものであり、
ナノポアを電圧源に結合することによって、膜内に挿入されるナノポア全体に電圧を印加するステップ、
前記ナノポアを前記電圧源から切り離すステップ、
前記切り離すステップの後、前記ナノポア全体の前記電圧の減衰率を決定するステップ、および、
前記ナノポア全体の前記電圧の前記決定された減衰率に基づいて、前記ナノポア内の分子を他の可能性のある分子から区別するステップ、を含む、
前記方法。 - 前記切り離すステップの後の前記ナノポア全体の前記電圧の前記減衰率が、前記膜に関連付けられたキャパシタンスおよび前記ナノポアに関連付けられた抵抗に対応するRC時定数によって特徴付けられる、請求項1に記載の方法。
- 前記ナノポアに関連付けられた前記抵抗が、前記ナノポア内の分子の化学構造に基づいて変化する、請求項2に記載の方法。
- 前記電圧の前記減衰率が、前記膜に関連付けられたキャパシタンスの放電に対応する、請求項1〜3のいずれか1項に記載の方法。
- 前記ナノポア全体の前記電圧の減衰率を決定するステップが、所定の時間間隔内で前記ナノポア全体の電圧減衰を決定するステップを含む、請求項1〜4のいずれか1項に記載の方法。
- 時間間隔内で前記ナノポア全体の電圧減衰を決定するステップが、
第1の電圧を測定するステップ、
前記ナノポア全体の前記電圧が減衰し終える選択された時間を待つステップ、および、
第2の電圧を測定するステップ、を含む、
請求項5に記載の方法。 - 前記ナノポア全体の前記電圧の減衰率を決定するステップが、前記ナノポア全体の前記電圧が所定の値だけ減衰する期間を決定するステップを含む、請求項1〜6のいずれか1項に記載の方法。
- 前記ナノポア全体の前記電圧の前記決定された減衰率に基づいて区別可能な前記分子が、Aタグが取り付けられたポリホスフェート、TまたはUタグが取り付けられたポリホスフェート、Gタグが取り付けられたポリホスフェート、およびCタグが取り付けられたポリホスフェートを備える、請求項1〜7のいずれか1項に記載の方法。
- 前記ナノポア全体の前記電圧の前記決定された減衰率に基づいて、前記ナノポアの開放チャネル状態を検出するステップをさらに含む、請求項1〜8のいずれか1項に記載の方法。
- 前記ナノポア全体の前記電圧の前記決定された減衰率に基づいて、断裂された膜を検出するステップをさらに含む、請求項1〜9のいずれか1項に記載の方法。
- 前記電圧源が正電圧および負電圧を時間とともに提供する、請求項1〜10のいずれか1項に記載の方法。
- 前記分子の一部が前記ナノポア内に位置する、請求項1〜11のいずれか1項に記載の方法。
- 前記分子が前記ナノポアと相互作用する他の分子に結合される、請求項1〜12のいずれか1項に記載の方法。
- ナノポアと相互作用する分子を分析する方法であって、前記ナノポアが膜内に挿入されるものであり、
エネルギーを膜全体の電場に保存するステップであって、ナノポアが前記膜内に挿入される前記ステップ、
前記膜全体の前記電場に保存された前記エネルギーを消散するステップ、
前記膜全体の前記エネルギーの消散率を決定するステップ、および、
前記膜全体の前記エネルギーの前記決定された消散率に基づいて、前記ナノポア内の分子を他の可能性のある分子から区別するステップを含む、
前記方法。 - 前記膜全体の前記エネルギーの前記消散率が、前記膜に関連付けられたキャパシタンスおよび前記ナノポアに関連付けられた抵抗に対応するRC時定数によって特徴付けられる、請求項14に記載の方法。
- 前記ナノポアに関連付けられた前記抵抗が、前記ナノポア内の分子の化学構造に基づいて変化する、請求項15に記載の方法。
- 前記膜全体の前記エネルギーの前記消散率が、前記膜に関連付けられたキャパシタンスの放電に対応する、請求項14〜16のいずれか1項に記載の方法。
- 前記膜全体の前記エネルギーの前記消散率を決定するステップが、前記ナノポア全体の電圧の電圧減衰率を決定するステップを含む、請求項14〜17のいずれか1項に記載の方法。
- ナノポアと相互作用する分子を分析するための装置であって、前記ナノポアが膜内に挿入されるものであり、
電流が流れることができるナノポアを有する二重層であって、二重層キャパシタンスを有する前記二重層、
前記二重層に接続し、および前記二重層から切断され得る切替型の電圧源、ならびに、
前記電圧源が切断された後、前記ナノポア全体の電圧の減衰率を測定する電圧測定回路、を備える、
前記装置。 - 前記ナノポア全体の前記電圧の前記決定された減衰率に基づいて、前記ナノポア内の分子を他の可能性のある分子から区別するプロセッサをさらに備える、請求項19に記載の装置。
- 前記ナノポア全体の前記電圧の前記減衰率が、前記二重層キャパシタンスおよび前記ナノポアに関連付けられた抵抗に対応するRC時定数によって特徴付けられる、請求項19または20に記載の装置。
- 前記ナノポアに関連付けられた前記抵抗が、前記ナノポア内の分子の化学構造に基づいて変化する、請求項21に記載の装置。
- 前記電圧の前記減衰率が、前記二重層キャパシタンスの放電に対応する、請求項19〜22のいずれか1項に記載の装置。
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US14/577,511 | 2014-12-19 | ||
US14/577,511 US9557294B2 (en) | 2014-12-19 | 2014-12-19 | Nanopore-based sequencing with varying voltage stimulus |
PCT/US2015/058533 WO2016099673A1 (en) | 2014-12-19 | 2015-11-01 | Nanopore-based sequencing with varying voltage stimulus |
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