JP6498563B2 - ３ｇ／４ｇ線形経路結合を使用した２ｇ増幅の回路と方法 - Google Patents

３ｇ／４ｇ線形経路結合を使用した２ｇ増幅の回路と方法 Download PDF

Info

Publication number
JP6498563B2
JP6498563B2 JP2015160631A JP2015160631A JP6498563B2 JP 6498563 B2 JP6498563 B2 JP 6498563B2 JP 2015160631 A JP2015160631 A JP 2015160631A JP 2015160631 A JP2015160631 A JP 2015160631A JP 6498563 B2 JP6498563 B2 JP 6498563B2
Authority
JP
Japan
Prior art keywords
path
signal
power amplifier
amplification
end architecture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015160631A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016042699A (ja
JP2016042699A5 (enExample
Inventor
ジョエル リチャード キング、
ジョエル リチャード キング、
ヒョン テ ジョン、
ヒョン テ ジョン、
ニック チェン、
ニック チェン、
ウェイヘン チャン、
ウェイヘン チャン、
ドエル ロイ、
ドエル ロイ、
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Skyworks Solutions Inc
Original Assignee
Skyworks Solutions Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Skyworks Solutions Inc filed Critical Skyworks Solutions Inc
Publication of JP2016042699A publication Critical patent/JP2016042699A/ja
Publication of JP2016042699A5 publication Critical patent/JP2016042699A5/ja
Priority to JP2019046251A priority Critical patent/JP6890146B6/ja
Application granted granted Critical
Publication of JP6498563B2 publication Critical patent/JP6498563B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191—Tuned amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H04B1/18—Input circuits, e.g. for coupling to an antenna or a transmission line
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/401—Circuits for selecting or indicating operating mode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/111—Indexing scheme relating to amplifiers the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/225—Indexing scheme relating to amplifiers the input circuit of an amplifying stage comprising an LC-network
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/231—Indexing scheme relating to amplifiers the input of an amplifier can be switched on or off by a switch to amplify or not an input signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/541—Transformer coupled at the output of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21109—An input signal being distributed by switching to a plurality of paralleled power amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21139—An impedance adaptation circuit being added at the output of a power amplifier stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21142—Output signals of a plurality of power amplifiers are parallel combined to a common output
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21145—Output signals are combined by switching a plurality of paralleled power amplifiers to a common output
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7209—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched from a first band to a second band
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7215—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch at the input of the amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Transceivers (AREA)
  • Transmitters (AREA)
JP2015160631A 2014-08-17 2015-08-17 ３ｇ／４ｇ線形経路結合を使用した２ｇ増幅の回路と方法 Active JP6498563B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2019046251A JP6890146B6 (ja) 2014-08-17 2019-03-13 フロントエンドアーキテクチャ、２ｇ信号を処理する方法、フロントエンドモジュール、及び無線装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201462038322P 2014-08-17 2014-08-17
US201462038323P 2014-08-17 2014-08-17
US62/038,322 2014-08-17
US62/038,323 2014-08-17

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019046251A Division JP6890146B6 (ja) 2014-08-17 2019-03-13 フロントエンドアーキテクチャ、２ｇ信号を処理する方法、フロントエンドモジュール、及び無線装置

Publications (3)

Publication Number Publication Date
JP2016042699A JP2016042699A (ja) 2016-03-31
JP2016042699A5 JP2016042699A5 (enExample) 2018-09-27
JP6498563B2 true JP6498563B2 (ja) 2019-04-10

Family

ID=53871959

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2015160631A Active JP6498563B2 (ja) 2014-08-17 2015-08-17 ３ｇ／４ｇ線形経路結合を使用した２ｇ増幅の回路と方法
JP2015160637A Pending JP2016042700A (ja) 2014-08-17 2015-08-17 モード又は周波数によって分離された入力に対応する電力増幅器インターフェース
JP2019046251A Active JP6890146B6 (ja) 2014-08-17 2019-03-13 フロントエンドアーキテクチャ、２ｇ信号を処理する方法、フロントエンドモジュール、及び無線装置
JP2021099599A Pending JP2021153326A (ja) 2014-08-17 2021-06-15 電力増幅器システム、電力増幅器デバイス及び無線デバイス

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2015160637A Pending JP2016042700A (ja) 2014-08-17 2015-08-17 モード又は周波数によって分離された入力に対応する電力増幅器インターフェース
JP2019046251A Active JP6890146B6 (ja) 2014-08-17 2019-03-13 フロントエンドアーキテクチャ、２ｇ信号を処理する方法、フロントエンドモジュール、及び無線装置
JP2021099599A Pending JP2021153326A (ja) 2014-08-17 2021-06-15 電力増幅器システム、電力増幅器デバイス及び無線デバイス

Country Status (5)

Country Link
US (3) US20160190995A1 (enExample)
EP (2) EP2988416B1 (enExample)
JP (4) JP6498563B2 (enExample)
CN (3) CN105376660B (enExample)
TW (2) TWI672918B (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6616241B2 (ja) * 2015-05-22 2019-12-04 スカイワークス ソリューションズ，インコーポレイテッド 電力増幅器用の並列機能を有する出力整合ネットワーク及びフィルタの結合体
KR20180026731A (ko) * 2015-07-06 2018-03-13 텔레폰악티에볼라겟엘엠에릭슨(펍) 무선 시스템에서 데이터 전송을 위한 리소스 할당
JP2017103655A (ja) 2015-12-02 2017-06-08 株式会社村田製作所 電力増幅モジュール
KR102468952B1 (ko) 2016-03-07 2022-11-22 삼성전자주식회사 신호를 송수신하는 전자 장치 및 방법
US9887673B2 (en) 2016-03-11 2018-02-06 Intel Corporation Ultra compact multi-band transmitter with robust AM-PM distortion self-suppression techniques
TWI729112B (zh) * 2016-04-09 2021-06-01 美商天工方案公司 具有可切換雙工器的前端架構
US9948350B2 (en) * 2016-07-06 2018-04-17 Qorvo Us, Inc. Multi-mode radio frequency circuitry
JP2018050167A (ja) 2016-09-21 2018-03-29 株式会社村田製作所 電力増幅モジュール
US10211784B2 (en) * 2016-11-03 2019-02-19 Nxp Usa, Inc. Amplifier architecture reconfiguration
US10469033B2 (en) 2016-11-21 2019-11-05 Murata Manufacturing Co., Ltd. Power amplification module
JP2018085560A (ja) 2016-11-21 2018-05-31 株式会社村田製作所 電力増幅モジュール
JP2018098766A (ja) 2016-12-09 2018-06-21 株式会社村田製作所 バイアス回路
US10148226B2 (en) 2016-12-09 2018-12-04 Murata Manufacturing Co., Ltd. Bias circuit
EP3442120B1 (en) * 2017-08-08 2021-02-03 Rohde & Schwarz GmbH & Co. KG Amplifier circuit and method
JP2019193115A (ja) 2018-04-25 2019-10-31 株式会社村田製作所 高周波増幅回路、高周波フロントエンド回路および通信装置
CN108768434B (zh) * 2018-06-06 2021-02-12 维沃移动通信有限公司 一种射频电路、终端及信号发射控制方法
CN112368944B (zh) * 2018-06-19 2022-09-20 株式会社村田制作所 高频放大电路和通信装置
US10498298B1 (en) 2018-08-10 2019-12-03 Qualcomm Incorporated Time-division duplexing using dynamic transceiver isolation
CN109195118A (zh) * 2018-10-19 2019-01-11 江苏未来智慧信息科技有限公司 基于蓝牙的带pa单向广播通信装置及通信方法
KR102581317B1 (ko) * 2018-12-24 2023-09-22 삼성전자 주식회사 복수개의 안테나 어레이를 포함하는 전자 장치
JP2020156026A (ja) * 2019-03-22 2020-09-24 日本電波工業株式会社 ログアンプ回路
US11544211B2 (en) * 2019-04-19 2023-01-03 Parallel Wireless, Inc. VRAN with PCIe fronthaul
KR102658531B1 (ko) * 2019-05-15 2024-04-18 삼성전자주식회사 단일 안테나를 이용한 다중 대역 통신을 위한 방법 및 그 전자 장치
US11469725B2 (en) 2019-06-07 2022-10-11 Skyworks Solutions, Inc. Apparatus and methods for power amplifier output matching
US11463116B2 (en) * 2019-09-20 2022-10-04 Murata Manufacturing Co., Ltd. Radio frequency module and communication device
KR102887576B1 (ko) * 2020-01-23 2025-11-26 삼성전자 주식회사 무선 신호를 처리하기 위한 전자 장치 및 그의 동작 방법
GB2597359A (en) * 2020-06-29 2022-01-26 Skyworks Solutions Inc Dual connectivity power amplifier system
JP2022019088A (ja) 2020-07-17 2022-01-27 株式会社村田製作所 電力増幅モジュール
CN119483614A (zh) * 2020-08-13 2025-02-18 株式会社村田制作所 高频模块
US12095430B2 (en) 2020-08-26 2024-09-17 Skyworks Solutions, Inc. Power amplifier power management in user equipment
GB2616523B (en) 2020-12-07 2024-04-10 Skyworks Solutions Inc Radio frequency front end module including common filter
CN116746061B (zh) * 2020-12-28 2025-09-05 株式会社村田制作所 高频电路和通信装置
CN113225092B (zh) * 2021-04-14 2022-11-08 荣耀终端有限公司 射频放大电路和方法
CN113659997B (zh) * 2021-08-16 2022-12-27 荣耀终端有限公司 射频放大电路、相位调节方法、射频放大方法和终端设备
US12470201B2 (en) 2021-08-27 2025-11-11 Skyworks Solutions, Inc. Packaged multilayer piezoelectric surface acoustic wave device with conductive pillar
CN115882791B (zh) * 2022-12-12 2025-08-01 深圳飞骧科技股份有限公司 一种电压合成式Doherty功率放大器
CN119543848A (zh) * 2025-01-22 2025-02-28 上海凡麒微电子有限公司 一种多频放大装置
CN120149776B (zh) * 2025-05-16 2025-08-12 深圳飞骧科技股份有限公司 射频功分单元、射频功分模组及射频接收系统

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2826433B2 (ja) * 1993-02-26 1998-11-18 日本電気株式会社 アンテナ用二周波整合回路
JP3332194B2 (ja) * 1995-08-10 2002-10-07 ソニー株式会社 スイツチ半導体集積回路及び通信端末装置
US5973557A (en) * 1996-10-18 1999-10-26 Matsushita Electric Industrial Co., Ltd. High efficiency linear power amplifier of plural frequency bands and high efficiency power amplifier
US6091966A (en) * 1997-09-29 2000-07-18 Ericsson, Inc. Dual-band, dual-mode power amplifier
US6188877B1 (en) * 1997-07-03 2001-02-13 Ericsson Inc. Dual-band, dual-mode power amplifier with reduced power loss
US7212788B2 (en) * 2002-08-13 2007-05-01 Atheros Communications, Inc. Method and apparatus for signal power loss reduction in RF communication systems
EP1619791B1 (en) * 2004-07-08 2007-01-10 Sony United Kingdom Limited Power control of a power amplifier
JP2007019939A (ja) * 2005-07-08 2007-01-25 Renesas Technology Corp 無線通信装置及びそれを用いた携帯電話端末
WO2007104055A2 (en) * 2006-03-09 2007-09-13 Skyworks Solutions, Inc. High efficiency load insensitive power amplifier
DE102007019082B4 (de) * 2007-04-23 2018-04-05 Snaptrack Inc. Frontendmodul
TWI346449B (en) * 2007-08-16 2011-08-01 Ind Tech Res Inst Power amplifier circuit for multi-frequencies and multi-modes and method for operating the same
DE102007050606B3 (de) * 2007-10-23 2009-04-23 Epcos Ag Schaltungsanordnung für eine Mobilfunkeinrichtung und Verfahren zum Betrieb
US7853290B2 (en) * 2007-10-29 2010-12-14 Infineon Technologies Ag Transmitter arrangement
US7876160B2 (en) * 2008-02-04 2011-01-25 Skyworks Solutions, Inc. Multi-mode high efficiency linear power amplifier
US8095092B2 (en) * 2008-06-26 2012-01-10 Infineon Technologies Ag Power efficient transmitter with high dynamic range
US7619468B1 (en) * 2008-09-30 2009-11-17 Nortel Networks Limited Doherty amplifier with drain bias supply modulation
US8447255B2 (en) * 2008-10-28 2013-05-21 Sony Ericsson Mobile Communications Ab Variable impedance matching network and method for the same
US8457685B1 (en) * 2009-04-20 2013-06-04 Rf Micro Devices, Inc. Method and system for increasing efficiency in a radio front-end
JP2010273321A (ja) * 2009-04-22 2010-12-02 Panasonic Corp 高周波電力増幅装置及びそれを有する無線通信装置
US8467738B2 (en) * 2009-05-04 2013-06-18 Rfaxis, Inc. Multi-mode radio frequency front end module
US8971830B2 (en) * 2009-05-12 2015-03-03 Qualcomm Incorporated Multi-mode multi-band power amplifier module
US8195119B2 (en) * 2009-05-13 2012-06-05 Qualcomm, Incorporated Switchable input pair operational amplifiers
US8750810B2 (en) * 2009-07-24 2014-06-10 Qualcomm Incorporated Power amplifier with switched output matching for multi-mode operation
JP5370097B2 (ja) 2009-11-24 2013-12-18 富士通株式会社 通信端末装置、通信回路及び通信方法
JP5563668B2 (ja) 2009-12-03 2014-07-30 エプコス アクチエンゲゼルシャフト フロントエンド回路
US8849272B2 (en) * 2010-02-25 2014-09-30 Mediatek Inc. Methods for coordinating radio activities in different radio access technologies and apparatuses utilizing the same
US20120202561A1 (en) * 2011-02-07 2012-08-09 Qualcomm Incorporated Cdma transceiver with cdma diversity receiver path shared with time duplexed receiver
WO2013027538A1 (ja) * 2011-08-23 2013-02-28 日本電気株式会社 送信機
US9679869B2 (en) * 2011-09-02 2017-06-13 Skyworks Solutions, Inc. Transmission line for high performance radio frequency applications
JP5798253B2 (ja) 2011-09-22 2015-10-21 エプコス アクチエンゲゼルシャフトＥｐｃｏｓ Ａｇ 帯域アグリゲーションモードのためのフロントエンド回路
US8634782B2 (en) * 2011-10-14 2014-01-21 Qualcomm Incorporated Multi-antenna wireless device with power combining power amplifiers
CN102404879B (zh) * 2011-11-04 2016-04-13 惠州Tcl移动通信有限公司 一种移动通讯终端
US9143125B2 (en) * 2011-11-09 2015-09-22 Skyworks Solutions, Inc. Radio-frequency switches having extended termination bandwidth and related circuits, modules, methods, and systems
CN103178791A (zh) * 2011-12-26 2013-06-26 深圳富泰宏精密工业有限公司 功率放大电路及具有该功率放大电路的无线通信装置
WO2013155494A1 (en) * 2012-04-12 2013-10-17 Skyworks Solutions, Inc. Systems and methods related to improved isolation between transmit and receive radio-frequency signals
US8987851B2 (en) * 2012-09-07 2015-03-24 Mediatek Inc. Radio-frequency device package and method for fabricating the same
CN202889657U (zh) * 2012-10-25 2013-04-17 宏达国际电子股份有限公司 双模双待双通的移动通讯装置
US9130600B2 (en) * 2012-12-18 2015-09-08 Broadcom Corporation Receiver architecture with reconfigurable on-chip matching for wideband operation and off-chip matching for low-power operation
US9337991B2 (en) * 2013-04-19 2016-05-10 Mediatek Singapore Pte. Ltd. Wireless communication unit, radio frequency module and method therefor
US9065541B2 (en) * 2013-09-10 2015-06-23 Broadcom Corporation Configurable wireless communication device with configurable front-end
US9276552B2 (en) * 2013-09-26 2016-03-01 Rf Micro Devices, Inc. Output match directional coupler
CN106464218B (zh) * 2014-02-25 2019-05-10 天工方案公司 关于改进的射频模块的系统、设备和方法
JP2015160631A (ja) 2014-02-27 2015-09-07 凸版印刷株式会社 電子レンジ加熱用包装容器
EP3164943A2 (en) * 2014-07-01 2017-05-10 Sofant Technologies Ltd Wireless communications apparatus

Also Published As

Publication number Publication date
JP2016042699A (ja) 2016-03-31
HK1216468A1 (zh) 2016-11-11
US20160190995A1 (en) 2016-06-30
US20190386616A1 (en) 2019-12-19
US11323073B2 (en) 2022-05-03
CN105376660A (zh) 2016-03-02
JP2019134460A (ja) 2019-08-08
TW201620245A (zh) 2016-06-01
EP2988417B1 (en) 2020-05-13
HK1216471A1 (zh) 2016-11-11
EP2988417A1 (en) 2016-02-24
CN105375968A (zh) 2016-03-02
JP6890146B2 (ja) 2021-06-18
CN105375968B (zh) 2020-05-22
TWI672918B (zh) 2019-09-21
TWI711270B (zh) 2020-11-21
JP6890146B6 (ja) 2021-07-14
TW201613286A (en) 2016-04-01
EP2988416B1 (en) 2019-11-06
CN105376660B (zh) 2020-10-30
JP2016042700A (ja) 2016-03-31
CN111585534A (zh) 2020-08-25
US20160191105A1 (en) 2016-06-30
CN111585534B (zh) 2024-03-19
EP2988416A1 (en) 2016-02-24
US10153736B2 (en) 2018-12-11
JP2021153326A (ja) 2021-09-30

Similar Documents

Publication Publication Date Title
JP6498563B2 (ja) ３ｇ／４ｇ線形経路結合を使用した２ｇ増幅の回路と方法
US11764734B2 (en) Signal combiner having a tuned termination circuit on an isolation port for a Doherty power amplifier
US10778152B2 (en) Methods for amplifying signals using a Doherty amplifier
US9912299B2 (en) Architectures and devices related to Doherty amplifiers
CN105375946B (zh) 用于双天线应用的发送前端模块
CN105375883B (zh) 具有可调阻抗终端电路的多尔蒂功率放大器组合器
JP2016149746A (ja) 小型単一帯域電力増幅器を多重に有する多重帯域デバイス
KR20170117497A (ko) 감소된 크기를 갖는 도허티 전력 증폭기
HK1212113A1 (en) Systems, circuits and methods related to low power efficiency improvement in power amplifiers
HK1216468B (zh) 進行2g放大的電路、方法和無線裝置
HK40036785A (en) Circuits and methods for 2g amplification using 3g/4g linear path combination
HK40036785B (zh) 使用3g/4g线性路径组合进行2g放大的电路和方法
HK1216462B (zh) 具有可調阻抗終端電路的多爾蒂功率放大器組合器

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180815

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180815

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20180815

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20180914

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20181113

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190201

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20190226

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20190313

R150 Certificate of patent or registration of utility model

Ref document number: 6498563

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250