JP6490914B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP6490914B2
JP6490914B2 JP2014131724A JP2014131724A JP6490914B2 JP 6490914 B2 JP6490914 B2 JP 6490914B2 JP 2014131724 A JP2014131724 A JP 2014131724A JP 2014131724 A JP2014131724 A JP 2014131724A JP 6490914 B2 JP6490914 B2 JP 6490914B2
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Japan
Prior art keywords
film
metal oxide
insulating film
oxide film
transistor
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JP2014131724A
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Japanese (ja)
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JP2015179805A5 (cg-RX-API-DMAC7.html
JP2015179805A (ja
Inventor
幸恵 鈴木
幸恵 鈴木
欣聡 及川
欣聡 及川
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2014131724A priority Critical patent/JP6490914B2/ja
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Publication of JP2015179805A5 publication Critical patent/JP2015179805A5/ja
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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2014131724A 2013-06-28 2014-06-26 半導体装置の作製方法 Expired - Fee Related JP6490914B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014131724A JP6490914B2 (ja) 2013-06-28 2014-06-26 半導体装置の作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2013135981 2013-06-28
JP2013135981 2013-06-28
JP2014038645 2014-02-28
JP2014038645 2014-02-28
JP2014131724A JP6490914B2 (ja) 2013-06-28 2014-06-26 半導体装置の作製方法

Related Child Applications (1)

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JP2018089942A Division JP6582094B2 (ja) 2013-06-28 2018-05-08 半導体装置

Publications (3)

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JP2015179805A JP2015179805A (ja) 2015-10-08
JP2015179805A5 JP2015179805A5 (cg-RX-API-DMAC7.html) 2017-08-03
JP6490914B2 true JP6490914B2 (ja) 2019-03-27

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Family Applications (6)

Application Number Title Priority Date Filing Date
JP2014131724A Expired - Fee Related JP6490914B2 (ja) 2013-06-28 2014-06-26 半導体装置の作製方法
JP2018089942A Active JP6582094B2 (ja) 2013-06-28 2018-05-08 半導体装置
JP2019159434A Active JP6962978B2 (ja) 2013-06-28 2019-09-02 液晶表示装置
JP2021168755A Active JP7261278B2 (ja) 2013-06-28 2021-10-14 液晶表示装置
JP2023062456A Withdrawn JP2023090731A (ja) 2013-06-28 2023-04-07 液晶表示装置
JP2024189550A Pending JP2025014013A (ja) 2013-06-28 2024-10-29 液晶表示装置

Family Applications After (5)

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JP2018089942A Active JP6582094B2 (ja) 2013-06-28 2018-05-08 半導体装置
JP2019159434A Active JP6962978B2 (ja) 2013-06-28 2019-09-02 液晶表示装置
JP2021168755A Active JP7261278B2 (ja) 2013-06-28 2021-10-14 液晶表示装置
JP2023062456A Withdrawn JP2023090731A (ja) 2013-06-28 2023-04-07 液晶表示装置
JP2024189550A Pending JP2025014013A (ja) 2013-06-28 2024-10-29 液晶表示装置

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JP (6) JP6490914B2 (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017085595A1 (ja) * 2015-11-20 2017-05-26 株式会社半導体エネルギー研究所 半導体装置、該半導体装置の作製方法、または該半導体装置を有する表示装置
EP3482420B1 (en) * 2016-07-08 2024-09-04 BOE Technology Group Co., Ltd. Thin film transistor, gate drive on array and display apparatus having the same, and fabricating method thereof
CN110651358A (zh) * 2017-05-19 2020-01-03 株式会社半导体能源研究所 半导体装置、显示装置以及半导体装置的制造方法
JP6799123B2 (ja) * 2018-09-19 2020-12-09 シャープ株式会社 アクティブマトリクス基板およびその製造方法

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JPH05273592A (ja) * 1992-01-31 1993-10-22 Canon Inc アクティブマトリクス型液晶表示素子及びその製造方法
JP3683463B2 (ja) * 1999-03-11 2005-08-17 シャープ株式会社 アクティブマトリクス基板、その製造方法、及び、該基板を用いたイメージセンサ
KR100611042B1 (ko) * 1999-12-27 2006-08-09 엘지.필립스 엘시디 주식회사 액정 표시장치 제조방법 및 그 제조방법에 따른액정표시장치
JP2005091819A (ja) * 2003-09-18 2005-04-07 Sharp Corp 液晶表示装置
JP5148912B2 (ja) * 2006-04-06 2013-02-20 株式会社半導体エネルギー研究所 液晶表示装置及び半導体装置、並びに電子機器
JP2008134625A (ja) * 2006-10-26 2008-06-12 Semiconductor Energy Lab Co Ltd 半導体装置、表示装置及び電子機器
KR101375831B1 (ko) * 2007-12-03 2014-04-02 삼성전자주식회사 산화물 반도체 박막 트랜지스터를 이용한 디스플레이 장치
JP5525224B2 (ja) * 2008-09-30 2014-06-18 株式会社半導体エネルギー研究所 表示装置
JP2010177223A (ja) * 2009-01-27 2010-08-12 Videocon Global Ltd 液晶表示装置及びその製造方法
US20100224880A1 (en) * 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2010230744A (ja) * 2009-03-26 2010-10-14 Videocon Global Ltd 液晶表示装置及びその製造方法
TWI596741B (zh) * 2009-08-07 2017-08-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
JPWO2011039853A1 (ja) * 2009-09-30 2013-02-21 キヤノン株式会社 薄膜トランジスタ
JP2011091110A (ja) * 2009-10-20 2011-05-06 Canon Inc 酸化物半導体素子を用いた回路及びその製造方法、並びに表示装置
CN102696112A (zh) * 2009-12-21 2012-09-26 夏普株式会社 有源矩阵基板和具有其的显示面板、以及有源矩阵基板的制造方法
KR102420689B1 (ko) * 2010-02-26 2022-07-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI432865B (zh) * 2010-12-01 2014-04-01 Au Optronics Corp 畫素結構及其製作方法
KR20120063809A (ko) * 2010-12-08 2012-06-18 삼성전자주식회사 박막 트랜지스터 표시판
WO2012086513A1 (ja) * 2010-12-20 2012-06-28 シャープ株式会社 半導体装置および表示装置
US9019440B2 (en) * 2011-01-21 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2012160679A (ja) * 2011-02-03 2012-08-23 Sony Corp 薄膜トランジスタ、表示装置および電子機器
JP5685989B2 (ja) * 2011-02-28 2015-03-18 ソニー株式会社 表示装置および電子機器
WO2013021607A1 (ja) * 2011-08-10 2013-02-14 シャープ株式会社 液晶表示装置、および液晶表示装置の製造方法
JP6122275B2 (ja) * 2011-11-11 2017-04-26 株式会社半導体エネルギー研究所 表示装置
US9082861B2 (en) * 2011-11-11 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Transistor with oxide semiconductor channel having protective layer

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Publication number Publication date
JP2018152581A (ja) 2018-09-27
JP2023090731A (ja) 2023-06-29
JP2022020664A (ja) 2022-02-01
JP6582094B2 (ja) 2019-09-25
JP2015179805A (ja) 2015-10-08
JP2025014013A (ja) 2025-01-28
JP2019220707A (ja) 2019-12-26
JP6962978B2 (ja) 2021-11-05
JP7261278B2 (ja) 2023-04-19

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