JP6485921B2 - コレクター - Google Patents
コレクター Download PDFInfo
- Publication number
- JP6485921B2 JP6485921B2 JP2016541867A JP2016541867A JP6485921B2 JP 6485921 B2 JP6485921 B2 JP 6485921B2 JP 2016541867 A JP2016541867 A JP 2016541867A JP 2016541867 A JP2016541867 A JP 2016541867A JP 6485921 B2 JP6485921 B2 JP 6485921B2
- Authority
- JP
- Japan
- Prior art keywords
- collector
- imaging
- mirror
- radiation source
- facet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000003384 imaging method Methods 0.000 claims description 157
- 238000005286 illumination Methods 0.000 claims description 121
- 230000005855 radiation Effects 0.000 claims description 72
- 230000003287 optical effect Effects 0.000 claims description 59
- 210000001747 pupil Anatomy 0.000 claims description 42
- 230000005540 biological transmission Effects 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 4
- 208000031481 Pathologic Constriction Diseases 0.000 description 3
- 208000037804 stenosis Diseases 0.000 description 3
- 230000036262 stenosis Effects 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
- G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
- G02B19/0019—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having reflective surfaces only (e.g. louvre systems, systems with multiple planar reflectors)
- G02B19/0023—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having reflective surfaces only (e.g. louvre systems, systems with multiple planar reflectors) at least one surface having optical power
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
- G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
- G02B19/0095—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with ultraviolet radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/09—Multifaceted or polygonal mirrors, e.g. polygonal scanning mirrors; Fresnel mirrors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/064—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements having a curved surface
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
15 コレクター
26 コレクター結像光学系
α1 55°よりも小さいビーム角
oA 光軸
Claims (3)
- 照明系(44)であって、
コレクター(45)によって集光されたEUV照明光(14)を物体視野(5)に案内する照明光学系(4)を有し、
前記コレクター(45)は、前記EUV照明光(14)を放射線源(3)から前記照明光学系(4)に伝達するように機能し、
前記照明光学系(4)は、
多数の視野ファセット(32)を有する視野ファセットミラー(17)と、
前記視野ファセット(32)を互いの上に重ねる方式で前記物体視野(5)内に結像する瞳ファセット伝達光学系の一部である多数の瞳ファセット(34 n )を有する瞳ファセットミラー(20)と、
を有し、
前記コレクター(45)は、前記放射線源(3)を複数の下流焦点領域(47n)内に結像するコレクター結像光学系を有し、前記視野ファセット(32)は、前記下流焦点領域(47n)のうちの1つを前記瞳ファセット(34n)のうちの1つの上にそれぞれ結像する視野ファセット伝達光学系の一部であり、
前記コレクター結像光学系は、
前記放射線源(3)が、その下流に配置された第1の焦点領域(471)内に、前記放射線源(3)とその下流に配置された前記第1の焦点領域(471)の間の光軸(oA)に対してビーム角(α)<20°で前記放射線源(3)によって放出された前記EUV照明光(14)によって第1のコレクター結像スケール(βK1)で結像され、
前記放射線源(3)が、その下流に配置され、かつ前記第1の焦点領域(471)から空間的に分離された第2の焦点領域(473,473’)内に、前記放射線源(3)とその下流に配置された前記第1の焦点領域(471)の間の光軸(oA)に対してビーム角(α)>70°で前記放射線源(3)によって放出された前記EUV照明光(14)によって第2のコレクター結像スケール(βK2)で結像される、
ように具現化され、
前記視野ファセット伝達光学系は、
前記第1の焦点領域(471)が、第1のファセット結像スケール(βF1)で結像され、
前記第2の焦点領域(473,473’)が、第2のファセット結像スケール(βF2)で結像される、
ように具現化され、
前記第1のコレクター結像スケール(βK1)と前記第1のファセット結像スケール(βF1)との積(βK1×βF1)は、前記瞳ファセット(34n)までの前記照明光(14)の全ての光路(35n)に関して、前記第2のコレクター結像スケール(βK2)と前記第2のファセット結像スケール(βF2)との積(βK2×βF2)から2.5倍よりも大きくなく異なる、
ことを特徴とする照明系(44)。 - 請求項1に記載の照明系(2;30;44)を有し、
前記放射線源(3)を有する、
ことを特徴とする投影露光装置(1)。 - ナノ構造化又は微細構造化構成要素を生成する方法であって、
レチクル(7)を与える段階と、
照明光ビーム(14)の光に感受性であるコーティングを有するウェーハ(12)を与える段階と、
請求項2に記載の投影露光装置を用いて前記レチクルの少なくとも一部分を前記ウェーハ(12)上に投影する段階と、
前記照明光ビーム(14)によって露光された前記ウェーハ(12)上の前記感光層を現像する段階と、
を含むことを特徴とする方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102013218132.9 | 2013-09-11 | ||
DE201310218132 DE102013218132A1 (de) | 2013-09-11 | 2013-09-11 | Kollektor |
PCT/EP2014/067963 WO2015036228A1 (de) | 2013-09-11 | 2014-08-25 | Kollektor |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016532908A JP2016532908A (ja) | 2016-10-20 |
JP6485921B2 true JP6485921B2 (ja) | 2019-03-20 |
Family
ID=51392265
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016541867A Active JP6485921B2 (ja) | 2013-09-11 | 2014-08-25 | コレクター |
Country Status (7)
Country | Link |
---|---|
US (1) | US9810890B2 (ja) |
EP (1) | EP3044635B1 (ja) |
JP (1) | JP6485921B2 (ja) |
KR (1) | KR102344281B1 (ja) |
CN (1) | CN105637421B (ja) |
DE (1) | DE102013218132A1 (ja) |
WO (1) | WO2015036228A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013218128A1 (de) | 2013-09-11 | 2015-03-12 | Carl Zeiss Smt Gmbh | Beleuchtungssystem |
DE102017125184A1 (de) * | 2017-10-27 | 2019-05-02 | Valeo Schalter Und Sensoren Gmbh | Freiformspiegel für eine Sendeeinrichtung einer optischen Erfassungsvorrichtung, Sendeeinrichtung, optische Erfassungsvorrichtung, Kraftfahrzeug und Verfahren |
DE102022200457A1 (de) | 2022-01-17 | 2023-07-20 | Carl Zeiss Smt Gmbh | Beleuchtungssystem für eine Projektionsbelichtungsanlage für die optische Lithographie |
Family Cites Families (34)
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US5339346A (en) | 1993-05-20 | 1994-08-16 | At&T Bell Laboratories | Device fabrication entailing plasma-derived x-ray delineation |
US7006595B2 (en) | 1998-05-05 | 2006-02-28 | Carl Zeiss Semiconductor Manufacturing Technologies Ag | Illumination system particularly for microlithography |
US6438199B1 (en) | 1998-05-05 | 2002-08-20 | Carl-Zeiss-Stiftung | Illumination system particularly for microlithography |
US7329886B2 (en) * | 1998-05-05 | 2008-02-12 | Carl Zeiss Smt Ag | EUV illumination system having a plurality of light sources for illuminating an optical element |
US6858853B2 (en) | 1998-05-05 | 2005-02-22 | Carl Zeiss Smt Ag | Illumination system particularly for microlithography |
DE10138313A1 (de) * | 2001-01-23 | 2002-07-25 | Zeiss Carl | Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm |
US6210865B1 (en) | 1998-08-06 | 2001-04-03 | Euv Llc | Extreme-UV lithography condenser |
DE19931848A1 (de) | 1999-07-09 | 2001-01-11 | Zeiss Carl Fa | Astigmatische Komponenten zur Reduzierung des Wabenaspektverhältnisses bei EUV-Beleuchtungssystemen |
US6285737B1 (en) * | 2000-01-21 | 2001-09-04 | Euv Llc | Condenser for extreme-UV lithography with discharge source |
US6569579B2 (en) * | 2001-03-13 | 2003-05-27 | Chartered Semiconductor Manufacturing, Ltd. | Semiconductor mask alignment system utilizing pellicle with zero layer image placement indicator |
DE10208854A1 (de) * | 2002-03-01 | 2003-09-04 | Zeiss Carl Semiconductor Mfg | Beleuchtungssystem mit genestetem Kollektor zur annularen Ausleuchtung einer Austrittspupille |
JP3919599B2 (ja) * | 2002-05-17 | 2007-05-30 | キヤノン株式会社 | 光学素子、当該光学素子を有する光源装置及び露光装置 |
US7075712B2 (en) | 2002-05-30 | 2006-07-11 | Fujitsu Limited | Combining and distributing amplifiers for optical network and method |
US7034320B2 (en) | 2003-03-20 | 2006-04-25 | Intel Corporation | Dual hemispherical collectors |
EP1469349B1 (en) | 2003-04-17 | 2011-10-05 | ASML Netherlands B.V. | Lithographic projection apparatus with collector including a concave mirror and a convex mirror |
US7075713B2 (en) | 2003-05-05 | 2006-07-11 | University Of Central Florida Research Foundation | High efficiency collector for laser plasma EUV source |
JP4120502B2 (ja) | 2003-07-14 | 2008-07-16 | 株式会社ニコン | 集光光学系、光源ユニット、照明光学装置および露光装置 |
US7481544B2 (en) * | 2004-03-05 | 2009-01-27 | Optical Research Associates | Grazing incidence relays |
US7164144B2 (en) | 2004-03-10 | 2007-01-16 | Cymer Inc. | EUV light source |
JP3977364B2 (ja) * | 2004-09-03 | 2007-09-19 | キヤノン株式会社 | 露光装置およびデバイス製造方法 |
JP2006108521A (ja) * | 2004-10-08 | 2006-04-20 | Canon Inc | X線発生装置及び露光装置 |
JPWO2006082738A1 (ja) * | 2005-02-03 | 2008-06-26 | 株式会社ニコン | オプティカルインテグレータ、照明光学装置、露光装置、および露光方法 |
US7405871B2 (en) | 2005-02-08 | 2008-07-29 | Intel Corporation | Efficient EUV collector designs |
JP4990287B2 (ja) | 2005-10-18 | 2012-08-01 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 波長が193nm以下の照明システム用集光器 |
DE102006014380A1 (de) | 2006-03-27 | 2007-10-11 | Carl Zeiss Smt Ag | Projektionsobjektiv und Projektionsbelichtungsanlage mit negativer Schnittweite der Eintrittspupille |
CN100504692C (zh) * | 2007-10-19 | 2009-06-24 | 上海微电子装备有限公司 | 用于硅片传输系统的并发控制方法 |
CN101246314B (zh) * | 2008-03-25 | 2010-06-02 | 上海微电子装备有限公司 | 硅片对准信号的处理方法 |
DE102009045135A1 (de) | 2009-09-30 | 2011-03-31 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die Mikrolithographie |
DE102010063530A1 (de) | 2009-12-22 | 2011-06-30 | Carl Zeiss SMT GmbH, 73447 | Blendenelement und optisches System für die EUV-Lithographie |
DE102010028655A1 (de) | 2010-05-06 | 2011-11-10 | Carl Zeiss Smt Gmbh | EUV-Kollektor |
EP2598931B1 (en) | 2010-07-30 | 2020-12-02 | Carl Zeiss SMT GmbH | Imaging optical system and projection exposure installation for microlithography with an imaging optical system of this type |
NL2009020A (en) * | 2011-07-22 | 2013-01-24 | Asml Netherlands Bv | Radiation source, method of controlling a radiation source, lithographic apparatus, and method for manufacturing a device. |
DE102011084266A1 (de) | 2011-10-11 | 2013-04-11 | Carl Zeiss Smt Gmbh | Kollektor |
DE102013218128A1 (de) | 2013-09-11 | 2015-03-12 | Carl Zeiss Smt Gmbh | Beleuchtungssystem |
-
2013
- 2013-09-11 DE DE201310218132 patent/DE102013218132A1/de not_active Ceased
-
2014
- 2014-08-25 KR KR1020167009502A patent/KR102344281B1/ko active IP Right Grant
- 2014-08-25 CN CN201480056123.5A patent/CN105637421B/zh active Active
- 2014-08-25 JP JP2016541867A patent/JP6485921B2/ja active Active
- 2014-08-25 WO PCT/EP2014/067963 patent/WO2015036228A1/de active Application Filing
- 2014-08-25 EP EP14755086.7A patent/EP3044635B1/de active Active
-
2016
- 2016-03-04 US US15/061,597 patent/US9810890B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN105637421B (zh) | 2018-02-27 |
JP2016532908A (ja) | 2016-10-20 |
EP3044635A1 (de) | 2016-07-20 |
KR102344281B1 (ko) | 2021-12-28 |
US9810890B2 (en) | 2017-11-07 |
CN105637421A (zh) | 2016-06-01 |
DE102013218132A1 (de) | 2015-03-12 |
WO2015036228A1 (de) | 2015-03-19 |
US20160187632A1 (en) | 2016-06-30 |
KR20160055228A (ko) | 2016-05-17 |
EP3044635B1 (de) | 2021-08-11 |
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