JP6485299B2 - 半導体装置およびその製造方法ならびに電力変換装置 - Google Patents
半導体装置およびその製造方法ならびに電力変換装置 Download PDFInfo
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- JP6485299B2 JP6485299B2 JP2015178990A JP2015178990A JP6485299B2 JP 6485299 B2 JP6485299 B2 JP 6485299B2 JP 2015178990 A JP2015178990 A JP 2015178990A JP 2015178990 A JP2015178990 A JP 2015178990A JP 6485299 B2 JP6485299 B2 JP 6485299B2
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- semiconductor layer
- type semiconductor
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims description 677
- 238000004519 manufacturing process Methods 0.000 title claims description 45
- 238000000034 method Methods 0.000 title claims description 39
- 238000006243 chemical reaction Methods 0.000 title description 8
- 230000002093 peripheral effect Effects 0.000 claims description 48
- 239000011777 magnesium Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 19
- 239000013078 crystal Substances 0.000 claims description 15
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000002019 doping agent Substances 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 9
- 229910052749 magnesium Inorganic materials 0.000 claims description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 8
- 230000007423 decrease Effects 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 473
- 230000008569 process Effects 0.000 description 22
- 239000007789 gas Substances 0.000 description 13
- 239000012535 impurity Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000001312 dry etching Methods 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000001629 suppression Effects 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015114375 | 2015-06-05 | ||
| JP2015114375 | 2015-06-05 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017005236A JP2017005236A (ja) | 2017-01-05 |
| JP2017005236A5 JP2017005236A5 (enrdf_load_stackoverflow) | 2017-12-28 |
| JP6485299B2 true JP6485299B2 (ja) | 2019-03-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015178990A Active JP6485299B2 (ja) | 2015-06-05 | 2015-09-11 | 半導体装置およびその製造方法ならびに電力変換装置 |
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| Country | Link |
|---|---|
| JP (1) | JP6485299B2 (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6485383B2 (ja) | 2016-02-23 | 2019-03-20 | 株式会社デンソー | 化合物半導体装置およびその製造方法 |
| JP6927112B2 (ja) * | 2018-03-27 | 2021-08-25 | 豊田合成株式会社 | 半導体装置の製造方法 |
| JP6927116B2 (ja) * | 2018-03-28 | 2021-08-25 | 豊田合成株式会社 | 半導体装置 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100225409B1 (ko) * | 1997-03-27 | 1999-10-15 | 김덕중 | 트렌치 디-모오스 및 그의 제조 방법 |
| KR100865600B1 (ko) * | 2000-02-09 | 2008-10-27 | 노쓰 캐롤라이나 스테이트 유니버시티 | 갈륨 나이트라이드 반도체 구조물 및 그 제조 방법, 및 반도체 구조물 및 그 제조 방법 |
| KR100473476B1 (ko) * | 2002-07-04 | 2005-03-10 | 삼성전자주식회사 | 반도체 장치 및 그 제조방법 |
| US7989882B2 (en) * | 2007-12-07 | 2011-08-02 | Cree, Inc. | Transistor with A-face conductive channel and trench protecting well region |
| JP5721308B2 (ja) * | 2008-03-26 | 2015-05-20 | ローム株式会社 | 半導体装置 |
| JP5442229B2 (ja) * | 2008-09-04 | 2014-03-12 | ローム株式会社 | 窒化物半導体素子の製造方法 |
| JP5884617B2 (ja) * | 2012-04-19 | 2016-03-15 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| JP6107597B2 (ja) * | 2013-03-26 | 2017-04-05 | 豊田合成株式会社 | 半導体装置およびその製造方法 |
| JP6041726B2 (ja) * | 2013-03-26 | 2016-12-14 | 三菱電機株式会社 | 電力変換装置及び空気調和装置 |
| JP6048317B2 (ja) * | 2013-06-05 | 2016-12-21 | 株式会社デンソー | 炭化珪素半導体装置 |
| WO2015072052A1 (ja) * | 2013-11-13 | 2015-05-21 | 三菱電機株式会社 | 半導体装置 |
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- 2015-09-11 JP JP2015178990A patent/JP6485299B2/ja active Active
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| JP2017005236A (ja) | 2017-01-05 |
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