JP6484398B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6484398B2
JP6484398B2 JP2015102078A JP2015102078A JP6484398B2 JP 6484398 B2 JP6484398 B2 JP 6484398B2 JP 2015102078 A JP2015102078 A JP 2015102078A JP 2015102078 A JP2015102078 A JP 2015102078A JP 6484398 B2 JP6484398 B2 JP 6484398B2
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light emitting
emitting device
semiconductor device
external connection
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JP2016219580A (ja
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若木　亮輔
亮輔 若木
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Nichia Corp
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Nichia Corp
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Priority to US15/158,139 priority patent/US9985189B2/en
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Description

本開示は半導体装置に関する。
実装基板上のランドパターンに発光装置が実装される半導体装置が知られている（特許文献１から４参照）。
特開２００６−３２５１１号公報 特開２００８−１４０５９６号公報 特開２０１２−２１２７９４号公報 特開２０１３−２４３２２９号公報
しかしながら、従来の半導体装置では、発光装置とランドパターンの接合強度を十分に確保できない場合がある。
上記の課題は、例えば、次の手段により解決することができる。第１面と前記第１面より高い第２面とを有するランド部を備える実装基板と、前記第１面上に配置される外部接続端子を備える発光装置と、少なくとも前記第２面上に配置され、前記外部接続端子と前記ランド部とを接合する接合部材と、を備える半導体装置。
上記の半導体装置によれば、発光装置とランド部の接合強度を高めることができる。
実施形態１に係る半導体装置の模式的平面図である。 図１中のＡ−Ａ断面図である。 図１中のＢ−Ｂ断面図である。 図３中の破線で囲んだ部分を拡大して示す図である。 実施形態２に係る半導体装置の模式的平面図である。 図５中のＣ−Ｃ断面を拡大して示す図である。 図５中のＤ−Ｄ断面図である。 実施形態３に係る半導体装置の模式的平面図である。 図８中のＥ−Ｅ断面を拡大して示す図である。 図８中のＦ−Ｆ断面図である。 図１０中の破線で囲んだ部分を拡大して示す図である。
［実施形態１に係る半導体装置］
図１は実施形態１に係る半導体装置の模式的平面図であり、図２は図１中のＡ−Ａ断面図であり、図３は図１中のＢ−Ｂ断面図である。また、図４は図３中の破線で囲んだ部分を拡大して示す図である。図１においては、理解を容易にするため、接合部材３０の図示を省略している。図１から図４に示すように、実施形態１に係る半導体装置１は、第１面１２２と第１面１２２より高い第２面１２４とを有するランド部１２を備える実装基板１０と、第１面１２２上に配置される外部接続端子２６を備える発光装置２０と、少なくとも第２面１２４上に配置され、外部接続端子２６とランド部１２とを接合する接合部材３０と、を備える半導体装置である。以下、順に説明する。なお、半導体装置１の平面視において、発光装置２０の光軸に平行な方向の前方が正面側、その反対の後方が背面側であって、発光装置２０の光軸に直交する方向が側方である。
（実装基板１０）
実装基板１０は、ガラスエポキシ樹脂、セラミック又はポリイミドなどからなる板状の母材を備えている。また、実装基板１０は、母材上に、銅、金、銀、ニッケル、パラジウム、タングステン、クロム、チタン、又はこれらの合金などからなるランド部１２や配線パターン１１を備えている。ランド部１２は、接合部材３０の濡れ性の観点において、表面が金、銀、又はこれらの合金からなることが好ましい。ランド部１２は配線パターン１１に接続され、配線パターン１１は外部電極などに接続される。ランド部１２の数は特に限定されないが、外部接続端子２６の数と同数であることが好ましい。本実施形態では外部接続端子２６の数が２つであるため、ランド部１２の数も２つとされている。ランド部１２や配線パターン１１は例えばメッキ、積層圧着、貼り付け、スパッタ、蒸着、エッチングなどの方法を用いて形成される。
ランド部１２には段差が設けられている。段差の下側には第１面１２２が設けられており、段差の上側には第１面１２２より高い第２面１２４が設けられている。このように、第１面１２２と第２面１２４は段差により形成される面であり、第２面１２４は第１面１２２より高い位置に設けられる。
第２面１２４の第１面１２２とは反対側の端部Ｅ１は、曲面状に形成されていてもよいが、角張っていることが好ましい。このようにすれば、溶融状態の接合部材３０を表面張力によって第２面１２４上にとどめやすくなるため、発光装置２０（外部接続端子２６）側により多くの接合部材３０を配置することが可能となり、発光装置２０（外部接続端子２６）と接合部材３０の接合強度をより高めることができる。
第２面１２４は、平面視において、例えば発光装置２０の側方に設けられる。このようにすれば、外部接続端子２６の側面が接合部材３０によって覆われるようになり、外部接続端子２６の側面にサイドフィレットが形成される。
（発光装置２０）
発光装置２０には側面発光型（「サイドビュー型」とも言う。）の発光装置などを用いることができる。具体的に説明すると、発光装置２０は、半導体発光素子や封止部材（波長変換層、光反射層などを含む）などからなる発光部２２と、パッケージ基材やリード電極などからなる配置部２４と、外部接続端子２６と、を備えている。発光部２２は配置部２４の正面に配置されている。なお、発光装置２０には上面発光型（「トップビュー型」とも言う。）の発光装置を用いることもできる。上面発光型の発光装置の場合、発光部２２は配置部２４の上面に配置される。
外部接続端子２６は、配置部２４の少なくとも一端（側方の一端）に設けられ、好ましくは配置部２４の両端（側方の両端）に設けられる。配置部２４の両端に外部接続端子２６を設けることにより、発光装置２０（外部接続端子２６）と接合部材３０の接合面積が拡大し、両者の接合強度がより高まる。本実施形態では、一例として、外部接続端子２６が、配置部２４の両端において、平面視Ｃ字状、即ち、配置部２４の正面から側面を経て背面に至るように設けられるものとする。配置部２４の両端に設けられた外部接続端子２６は、第１面１２２上に配置される。外部接続端子２６は銅、鉄、金、銀、アルミニウム、パラジウム、ニッケル、又はこれらの合金などからなる。外部接続端子２６は、接合部材３０の濡れ性の観点において、表面が金、銀、又はこれらの合金からなることが好ましい。
（接合部材３０）
接合部材３０は例えば半田材料からなる。接合部材３０は、外部接続端子２６の一部領域を覆うよう外部接続端子２６とランド部１２とを接合する。接合部材３０は、少なくとも第２面１２４上に配置されていればよいが、第１面１２２上と第２面１２４上とにわたり配置されていることが好ましい。このようにすれば、発光装置２０（外部接続端子２６）と接合部材３０の接合面積が発光装置２０（外部接続端子２６）の下方側に向けて拡大するため、両者の接合強度をより高めることができる。なお、第２面１２４の第１面１２２側の端部Ｅ２を曲面状に形成すれば、溶融状態の接合部材３０が段差を越えて第１面１２２上と第２面１２４上とに行きわたりやすくなるため、接合部材３０を第１面１２２上と第２面１２４上とにわたり配置させやすくなる。
（高低差）
第１面１２２と発光装置２０の上面との高低差Ｌ０は、特に限定されるものではないが、例えば、０．１ｍｍ以上０．８ｍｍ以下であることが好ましく、０．２ｍｍ以上０．４ｍｍ以下であることがより好ましい。また、第２面１２４と接合部材３０の最上部との高低差Ｌ１は、特に限定されるものではないが、例えば、０．０９ｍｍ以上０．５ｍｍ以下であることが好ましく、０．１ｍｍ以上０．３ｍｍ以下であることがより好ましい。また、第１面１２２と第２面１２４との高低差Ｔは、特に限定されるものではないが、例えば、０．０１ｍｍ以上０．３ｍｍ以下であることが好ましく、０．０１５ｍｍ以上０．０８ｍｍ以下であることがより好ましい。
以上説明した実施形態１に係る半導体装置１によれば、ランド部１２が第１面１２２と第１面１２２より高い第２面１２４を有し、接合部材３０が第２面１２４上に配置される。したがって、平坦なランド部１２上に接合部材３０を設ける場合よりも、外部接続端子２６の表面がより上方の領域まで接合部材３０によって覆われるようになる。よって、発光装置２０とランド部１２の接合強度を高めることが可能となる。また、発光装置２０を所望の位置や向きで精度良く実装することが可能となる。
［実施形態２に係る半導体装置２］
図５は実施形態２に係る半導体装置の模式的平面図であり、図６は図５中のＣ−Ｃ断面を拡大して示す図であり、図７は図５中のＤ−Ｄ断面図である。図５においては、理解を容易にするため、接合部材３０の図示を省略している。図５から図７に示すように、実施形態２に係る半導体装置２は、第２面１２４が、平面視において、発光装置２０の正面側と、発光装置２０の背面側と、に設けられている点で、実施形態１に係る半導体装置１と相違する。実施形態２に係る半導体装置１によれば、発光装置２０が正面側と背面側に設けられた接合部材３０により、発光装置２０の正面側と背面側の両方から引っ張られるようになるため、より精度良く、発光装置２０を所望の位置や向きで実装することが可能となる。
なお、実施形態２に係る半導体装置２において、発光装置２０の正面側における第２面１２４の面積は、発光装置２０の背面側における第２面１２４の面積より大きいことが好ましい。このようにすれば、発光装置２０の正面側に背面側よりも多くの接合部材３０を配置することが可能となるため、発光装置２０の正面側に向けて発光装置２０が引っ張られるようになる。したがって、発光装置２０の正面側に設けられた段差を利用して発光装置２０を位置決めできるようになる。また、より精度良く、発光装置２０を所望の位置や向きで実装することが可能となる。さらに、半導体装置２が複数の発光装置２０を有する場合においては、段差の位置にて複数の発光装置２０を整列させることができる。
［実施形態３に係る半導体装置３］
図８は実施形態３に係る半導体装置の模式的平面図であり、図９は図８中のＥ−Ｅ断面を拡大して示す図であり、図１０は図８中のＦ−Ｆ断面図である。また、図１１は図１０中の破線で囲んだ部分を拡大して示す図である。図８においては、理解を容易にするため、接合部材３０の図示を省略している。図９から図１１に示すように、実施形態３に係る半導体装置３は、第２面１２４が平面視Ｃ字状に設けられる点で、実施形態１に係る半導体装置１と相違する。実施形態３に係る半導体装置３によれば、外部接続端子２６を接合部材３０でＣ字状に取り囲むことができるため、より精度良く、発光装置２０を所望の位置や向きで実装することが可能となる。
［その他の形態］
以上、実施形態１から３について説明したが、第２面１２４の平面視における位置・形状は、これらの実施形態に限定されるものではない。第２面１２４は、平面視において様々な位置・形状に形成することができる。
実施例１として、実施形態２に係る半導体装置２において、第１面１２２と発光装置２０の上面との高低差Ｌ０が０．３ｍｍであり、第２面１２４と接合部材３０の最上部との高低差Ｌ１が０．１ｍｍであり、第１面１２２と第２面１２４との高低差Ｔが０．０１８ｍｍである場合について検討する。この場合、発光装置２０の最上部に１０Ｎの応力Ｐが生じたとすると、発光装置２０の最下部を回転中心として発光装置２０の最上部に加わるモーメントＭ１は次の値をとる。Ｍ１＝Ｐ×（Ｌ０−Ｌ１−Ｔ）＝１．８２×１０−３Ｎｍ。
実施例２として、実施形態２に係る半導体装置２において、第１面１２２と発光装置２０上面との高低差Ｌ０が０．３ｍｍであり、第２面１２４と接合部材３０の最上部との高低差Ｌ１が０．１ｍｍであり、第１面１２２と第２面１２４との高低差Ｔが０．０３５ｍｍである場合について検討する。この場合、発光装置２０の最上部に１０Ｎの応力Ｐが生じたとすると、発光装置２０の最下部を回転中心として発光装置２０の最上部に加わるモーメントＭ１は次の値をとる。Ｍ１＝Ｐ×（Ｌ０−Ｌ１−Ｔ）＝１．６５×１０−３Ｎｍ。
実施例３として、実施形態２に係る半導体装置２において、第１面１２２と発光装置２０上面との高低差Ｌ０が０．３ｍｍであり、第２面１２４と接合部材３０の最上部との高低差Ｌ１が０．１ｍｍであり、第１面１２２と第２面１２４との高低差Ｔが０．０５３ｍｍである場合について検討する。この場合、発光装置２０の最上部に１０Ｎの応力Ｐが生じたとすると、発光装置２０の最下部を回転中心として発光装置２０の最上部に加わるモーメントＭ１は次の値をとる。Ｍ１＝Ｐ×（Ｌ０−Ｌ１−Ｔ）＝１．４７×１０−３Ｎｍ。
実施例４として、実施形態２に係る半導体装置２において、第１面１２２と発光装置２０上面との高低差Ｌ０が０．３ｍｍであり、第２面１２４と接合部材３０の最上部との高低差Ｌ１が０．１ｍｍであり、第１面１２２と第２面１２４との高低差Ｔが０．０７ｍｍである場合について検討する。この場合、発光装置２０の最上部に１０Ｎの応力Ｐが生じたとすると、発光装置２０の最下部を回転中心として発光装置２０の最上部に加わるモーメントＭ１は次の値をとる。Ｍ１＝Ｐ×（Ｌ０−Ｌ１−Ｔ）＝１．３０×１０−３Ｎｍ。
［比較例］
比較例として、第２面１２４を備えていない点を除き実施形態２に係る半導体装置２と同じ構成を有する半導体装置において、第１面１２２と発光装置２０の上面との高低差Ｌ０が０．３ｍｍである場合について検討する。この場合、発光装置２０の最上部に１０Ｎの応力Ｐが生じたとすると、発光装置２０の最下部を回転中心として発光装置２０の最上部に加わるモーメントＭ０は次の値をとる。Ｍ０＝Ｐ×（Ｌ０−Ｌ１）＝２．００×１０−３Ｎｍ。
［比較］
実施例１から４と比較例を比較すると、次の表のようになる。
Figure 0006484398
すなわち、実施例１によれば比較例よりモーメントが９％減少し、実施例２によれば比較例よりモーメントが１７．５％減少し、実施例３によれば比較例よりモーメントが１７．５％減少し、実施例４によれば比較例よりモーメントが３５％減少することが分かる。したがって、第１面１２２より高い第２面１２４を備えることによって、発光装置２０とランド部１２との接合強度が高まり、半導体装置２の安定性が増すことが分かる。また、第１面１２２と第２面１２４の高低差をより大きくすれば、より一層、発光装置２０とランド部１２との接合強度が高まり、半導体装置２の安定性が増すことが分かる。
以上、実施形態について説明したが、これらの説明は一例に関するものであり、特許請求の範囲に記載された構成を何ら限定するものではない。
１、２、３ 半導体装置
１０ 実装基板
１１ 配線パターン
１２ ランド部
１２２ 第１面
１２４ 第２面
２０ 発光装置
２２ 発光部
２４ 配置部
２６ 外部接続端子
３０ 接合部材
Ｅ１ 第２面１２４の第１面１２２側とは反対側の端部
Ｅ２ 第２面１２４の第１面１２２側の端部
Ｌ０ 第１面１２２と発光装置２０の上面との高低差
Ｌ１ 第２面１２４と接合部材３０の最上部との高低差
Ｔ 第１面１２２と第２面１２４との高低差

Claims (6)

  1. 第１面と前記第１面より高い第２面とを有するランド部を備える実装基板と、
    前記第１面上に配置される配置部と、前記配置部に配置される発光部と、前記配置部の少なくとも一端に設けられ前記第１面上に配置される外部接続端子と、を備える発光装置と、
    少なくとも前記第２面上に配置され、前記外部接続端子と前記ランド部とを接合する接合部材と、を備え、
    前記第１面は、前記配置部の下面に接しており、
    前記第２面は、前記外部接続端子から遠い側に断面視において角張った形状の第１端部を有するとともに、前記外部接続端子から近い側に断面視曲面状の第２端部を有する半導体装置。
  2. 前記第２面は、平面視において、前記発光装置の側方にある請求項１に記載の半導体装置。
  3. 前記発光装置は、前記発光部が前記配置部の正面に配置される側面発光型の発光装置であり、
    前記第２面は、平面視において、前記発光装置の正面側と、前記発光装置の背面側と、にある請求項１又は２に記載の半導体装置。
  4. 前記発光装置の正面側における前記第２面の面積が、前記発光装置の背面側における前記第２面の面積より大きい請求項３に記載の半導体装置。
  5. 前記第２面は平面視Ｃ字状に設けられる請求項１から４のいずれか１項に記載の半導体装置。
  6. 前記接合部材は前記第１面上と前記第２面上とにわたり配置されている請求項１から５のいずれか１項に記載の半導体装置。
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