JP6474645B2 - 電力半導体モジュールおよびその製造方法 - Google Patents
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Description
111:第1組立ターミナル
112:第2組立ターミナル
120:絶縁部材
131:第1デバイス
132:第2デバイス
210:保護部
901:下金型枠
902:上金型枠
910:封止材
Claims (16)
- 第1デバイスと、
前記第1デバイスと一定間隔で配置される第2デバイスと、
前記第1デバイスおよび前記第2デバイスの外面と接触するように固定的に組立てられ、一側接続端となる第2組立ターミナルと、
前記第1デバイスおよび前記第2デバイスの間に接触するように固定的に組立てられ、他側接続端となる第1組立ターミナルとを含み、
前記第1組立ターミナルおよび前記第2組立ターミナルのうちの少なくとも一つは、クリップ形状であり、
前記第1組立ターミナルと前記第2組立ターミナルとの間に介在する絶縁部材をさらに含むことを特徴とする、電力半導体モジュール。 - 封止材を用いて、前記固定的に組立てられている状態を維持するように保護外面を形成する保護部をさらに含むことを特徴とする、請求項1に記載の電力半導体モジュール。
- 前記第1組立ターミナルの内側、または前記第2組立ターミナルの外側に付着する絶縁部材をさらに含むことを特徴とする、請求項1に記載の電力半導体モジュール。
- 前記第1組立ターミナルの一側末端は、一字形状であることを特徴とする、請求項1に記載の電力半導体モジュール。
- 前記第1組立ターミナルの一側末端は、コ字形状またはコ字を反転させた形状であることを特徴とする、請求項1に記載の電力半導体モジュール。
- 前記第1組立ターミナルの他側末端は、前記第1組立ターミナルの他の部分より幅がより広いことを特徴とする、請求項1に記載の電力半導体モジュール。
- 前記第1組立ターミナルの他側末端、または前記第2組立ターミナルの両側末端が、鋸歯形状であることを特徴とする、請求項1に記載の電力半導体モジュール。
- 前記第1組立ターミナルの他側末端、または前記第2組立ターミナルの両側末端が、屈曲のある形状であることを特徴とする、請求項1に記載の電力半導体モジュール。
- 前記第1デバイスおよび前記第2デバイスは、FET(Field Effect Transistor)、MOSFET(Metal Oxide Semiconductor FET)、IGBT(Insulated Gate Bipolar Mode Transistor)、およびパワー整流ダイオードのうちのいずれか1つであることを特徴とする、請求項1に記載の電力半導体モジュール。
- 前記封止材は、金型を通して、前記第1組立ターミナルおよび前記第2組立ターミナルが圧着された状態で流入して凝固することを特徴とする、請求項2に記載の電力半導体モジュール。
- 前記封止材は、熱硬化性樹脂であることを特徴とする、請求項2に記載の電力半導体モジュール。
- 第1デバイスを配置し、前記第1デバイスと一定間隔で第2デバイスを配置する配置ステップと、
一側接続端となる第2組立ターミナルを、前記第1デバイスおよび前記第2デバイスの外面と接触するように固定的に組立てる第1固定組立ステップと、
他側接続端となる第1組立ターミナルを、前記第1デバイスおよび前記第2デバイスの間に接触するように固定的に組立てる第2固定組立ステップとを含み、
前記第1組立ターミナルおよび前記第2組立ターミナルのうちの少なくとも一つは、クリップ形状であり、
前記第1組立ターミナルと前記第2組立ターミナルとの間に絶縁部材を介在させるステップをさらに含むことを特徴とする、電力半導体モジュールの製造方法。 - 封止材を用いて、前記固定的に組立てられている状態を維持するように保護外面のための保護部を形成する保護部形成ステップをさらに含むことを特徴とする、請求項12に記載の電力半導体モジュールの製造方法。
- 前記第1組立ターミナルの内側、または前記第2組立ターミナルの外側に絶縁部材を付着させるステップをさらに含むことを特徴とする、請求項12に記載の電力半導体モジュールの製造方法。
- 前記保護部形成ステップは、金型を用いて前記第1組立ターミナルおよび前記第2組立ターミナルを圧着するステップと、
前記金型を通して前記封止材を流入させて凝固させるステップとを含むことを特徴とする、請求項13に記載の電力半導体モジュールの製造方法。 - 前記封止材は、熱硬化性樹脂であることを特徴とする、請求項13に記載の電力半導体モジュールの製造方法。
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KR1020140139723A KR101673680B1 (ko) | 2014-10-16 | 2014-10-16 | 전력 반도체 모듈 및 이의 제조 방법 |
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JP6480856B2 (ja) * | 2015-12-14 | 2019-03-13 | 株式会社東芝 | 半導体モジュール |
JP6685143B2 (ja) * | 2016-02-03 | 2020-04-22 | 三菱電機株式会社 | 電極端子、半導体装置及び電力変換装置 |
CN109699191A (zh) * | 2017-07-14 | 2019-04-30 | 新电元工业株式会社 | 电子模块 |
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JPH06104367A (ja) * | 1992-09-18 | 1994-04-15 | Mitsubishi Electric Corp | 半導体集積回路装置 |
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US9524936B2 (en) | 2016-12-20 |
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KR20160044799A (ko) | 2016-04-26 |
EP3010039A1 (en) | 2016-04-20 |
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EP3010039B1 (en) | 2017-11-29 |
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