JP6471515B2 - パイプ保持接続構造およびそれを備える高周波アンテナ装置 - Google Patents
パイプ保持接続構造およびそれを備える高周波アンテナ装置 Download PDFInfo
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- 239000012530 fluid Substances 0.000 claims description 35
- 239000012212 insulator Substances 0.000 claims description 32
- 238000012856 packing Methods 0.000 claims description 18
- 239000003990 capacitor Substances 0.000 claims description 17
- 238000007789 sealing Methods 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims 1
- 239000000615 nonconductor Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 description 14
- 239000000463 material Substances 0.000 description 12
- 238000012423 maintenance Methods 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000004696 Poly ether ether ketone Substances 0.000 description 4
- 230000001939 inductive effect Effects 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229920002530 polyetherether ketone Polymers 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229920006351 engineering plastic Polymers 0.000 description 2
- -1 fluororesin Substances 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
- F16L5/00—Devices for use where pipes, cables or protective tubing pass through walls or partitions
- F16L5/02—Sealing
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
- F16L15/00—Screw-threaded joints; Forms of screw-threads for such joints
- F16L15/04—Screw-threaded joints; Forms of screw-threads for such joints with additional sealings
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
- F16L15/00—Screw-threaded joints; Forms of screw-threads for such joints
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- F16L15/008—Screw-threaded joints; Forms of screw-threads for such joints with straight threads with sealing rings
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
- F16L41/00—Branching pipes; Joining pipes to walls
- F16L41/08—Joining pipes to walls or pipes, the joined pipe axis being perpendicular to the plane of the wall or to the axis of another pipe
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- F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
- F16L41/00—Branching pipes; Joining pipes to walls
- F16L41/08—Joining pipes to walls or pipes, the joined pipe axis being perpendicular to the plane of the wall or to the axis of another pipe
- F16L41/086—Joining pipes to walls or pipes, the joined pipe axis being perpendicular to the plane of the wall or to the axis of another pipe fixed with screws
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- F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
- F16L5/00—Devices for use where pipes, cables or protective tubing pass through walls or partitions
- F16L5/02—Sealing
- F16L5/08—Sealing by means of axial screws compressing a ring or sleeve
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H05H1/00—Generating plasma; Handling plasma
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- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/002—Cooling arrangements
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
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Description
図2に、この発明に係るパイプ保持接続構造の一実施形態を示す。
次に、上記パイプ保持接続構造30a、30bを備えている高周波アンテナ装置の実施形態を説明する。以下においては、上記パイプ保持接続構造30a、30bと同一または相当する部分には同一符号を付して、それとの相違点を主に説明する。
Z=3R+j(3ωL−2/ωC)
4 真空容器
6 開口部
30a、30b パイプ保持接続構造
32 ハウジング
38 貫通穴
40 第1の雌ねじ部
42 第2の雌ねじ部
50 第1のパイプ
52 係止部
56、58 雄ねじ部
60 第2のパイプ
64 雌ねじ部
80 継手
82 パイプ挿入穴
84 雄ねじ部
90a、90b 高周波アンテナ装置
92、93 絶縁物
94 絶縁パイプ
96 中空絶縁体
100 コンデンサ
Claims (7)
- 内部に流体が流されるパイプが真空容器の開口部を貫通している部分の構造であって、
前記真空容器の外壁に、前記開口部を気密に塞ぐように固定されたハウジングと、
前記真空容器内に設けられていて内部に前記流体が流される第1のパイプであって、その端部付近が前記真空容器の開口部および前記ハウジングを貫通しており、かつ当該端部付近に、前記ハウジングの真空容器側端部と係わり合って当該第1のパイプの真空容器外側方向への動きを止める係止部を有しており、更に端部に雄ねじ部を有している第1のパイプと、
前記ハウジングと前記第1のパイプとの間を真空シールするパッキンと、
前記真空容器外に設けられていて内部に前記流体が流される第2のパイプであって、その端部に、前記第1のパイプの雄ねじ部と螺合して両パイプを接続する雌ねじ部を有している第2のパイプと、
前記第1のパイプの端部と前記第2のパイプの端部との間をシールするパッキンとを備えている、ことを特徴とするパイプ保持接続構造。 - 内部に流体が流されるパイプが真空容器の開口部を貫通している部分の構造であって、
前記真空容器の外壁に、前記開口部を気密に塞ぐように固定されたハウジングであって、その内部に貫通穴ならびに当該貫通穴につながる第1の雌ねじ部および第2の雌ねじ部を有しているハウジングと、
前記真空容器内に設けられていて内部に前記流体が流される第1のパイプであって、その端部付近が前記真空容器の開口部を貫通しており、かつ当該端部付近に、前記ハウジングの真空容器側端部と係わり合って当該第1のパイプの真空容器外側方向への動きを止める係止部を有しており、更に端部に、前記ハウジングの第1の雌ねじ部と螺合して当該第1のパイプと前記ハウジングとを接続する雄ねじ部を有している第1のパイプと、
前記ハウジングと前記第1のパイプとの間を真空シールするパッキンと、
前記真空容器外に設けられていて内部に前記流体が流される第2のパイプと、
前記第2のパイプの端部を接続する部分および前記ハウジングの第2の雌ねじ部と螺合する雄ねじ部を有していて、前記第2のパイプを前記ハウジングに、前記流体をシールした状態で接続する継手とを備えている、ことを特徴とするパイプ保持接続構造。 - 請求項1記載のパイプ保持接続構造であって前記ハウジングが絶縁物製であるパイプ保持接続構造を備えており、
前記第1のパイプは導体から成り、その両端部付近が前記真空容器の壁面に設けられた二つの開口部をそれぞれ貫通しており、
前記パイプ保持接続構造は、前記第1のパイプの各端部付近が前記各開口部を貫通している部分に設けられており、
前記真空容器の各開口部には、前記真空容器と前記第1のパイプとの間を電気絶縁する絶縁物が設けられており、
かつ前記第1のパイプは、それに高周波電流が流されて高周波アンテナとして機能するものである、ことを特徴とする高周波アンテナ装置。 - 請求項2記載のパイプ保持接続構造であって前記ハウジングが金属製であるパイプ保持接続構造を備えており、
前記第1のパイプは導体から成り、その両端部付近が前記真空容器の壁面に設けられた二つの開口部をそれぞれ貫通しており、
前記パイプ保持接続構造は、前記第1のパイプの各端部付近が前記各開口部を貫通している部分に設けられており、
前記真空容器の各開口部およびその周りには、前記真空容器と前記第1のパイプおよび前記ハウジングとの間を電気絶縁する絶縁物が設けられており、
かつ前記第1のパイプは、それに高周波電流が流されて高周波アンテナとして機能するものである、ことを特徴とする高周波アンテナ装置。 - 請求項1記載のパイプ保持接続構造であって前記ハウジングが絶縁物製であるパイプ保持接続構造および請求項2記載のパイプ保持接続構造であって前記ハウジングが金属製であるパイプ保持接続構造を備えており、
当該二つのパイプ保持接続構造の前記第1のパイプは別のものではなく一つのものであり、かつ当該第1のパイプは導体から成り、その一方の端部付近は前記真空容器の壁面に設けられた第1の開口部を貫通しており、他方の端部付近は前記真空容器の壁面に設けられた第2の開口部を貫通しており、
前記第1のパイプの前記一方の端部付近が前記第1の開口部を貫通している部分に前記請求項1記載のパイプ保持接続構造が設けられており、かつ前記第1の開口部には、前記真空容器と前記第1のパイプとの間を電気絶縁する絶縁物が設けられており、
前記第1のパイプの前記他方の端部付近が前記第2の開口部を貫通している部分に前記請求項2記載のパイプ保持接続構造が設けられており、かつ前記第2の開口部およびその周りには、前記真空容器と前記第1のパイプおよび前記金属製のハウジングとの間を電気絶縁する絶縁物が設けられており、
かつ前記第1のパイプは、それに高周波電流が流されて高周波アンテナとして機能するものである、ことを特徴とする高周波アンテナ装置。
- 前記第1のパイプの前記真空容器内に位置する部分は、1以上の中空絶縁体を直列に介在させることによって電気的に複数区分に分割されており、
かつ前記各中空絶縁体の外周部に層状のコンデンサをそれぞれ設けて、当該コンデンサを介して、前記複数区分を電気的に直列接続している請求項3、4または5記載の高周波アンテナ装置。 - 前記第1のパイプの前記真空容器内に位置する部分は、絶縁パイプ内に配置されている請求項3、4、5または6記載の高周波アンテナ装置。
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PCT/JP2016/051762 WO2016121626A1 (ja) | 2015-01-28 | 2016-01-22 | パイプ保持接続構造およびそれを備える高周波アンテナ装置 |
KR1020177020941A KR101981072B1 (ko) | 2015-01-28 | 2016-01-22 | 파이프 유지 접속 구조 및 그것을 구비하는 고주파 안테나 장치 |
US15/546,664 US9897236B2 (en) | 2015-01-28 | 2016-01-22 | Pipe holding connection structure and high frequency antenna device including the same |
CN201680007653.XA CN107208833B (zh) | 2015-01-28 | 2016-01-22 | 管路保持连接结构以及具备所述结构的高频天线装置 |
TW105102427A TWI546485B (zh) | 2015-01-28 | 2016-01-27 | A pipe-connecting structure, and a high-frequency antenna device having the same |
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CN108933074B (zh) * | 2017-05-24 | 2020-06-19 | 北京北方华创微电子装备有限公司 | 进气装置和包括该进气装置的腔室 |
JP7025711B2 (ja) * | 2018-03-14 | 2022-02-25 | 日新電機株式会社 | アンテナ及びプラズマ処理装置 |
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US10781710B2 (en) | 2018-07-17 | 2020-09-22 | Raytheon Technologies Corporation | Sealing configuration to reduce air leakage |
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