JP6462609B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6462609B2
JP6462609B2 JP2016034711A JP2016034711A JP6462609B2 JP 6462609 B2 JP6462609 B2 JP 6462609B2 JP 2016034711 A JP2016034711 A JP 2016034711A JP 2016034711 A JP2016034711 A JP 2016034711A JP 6462609 B2 JP6462609 B2 JP 6462609B2
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Prior art keywords
bonding material
wiring
melting point
semiconductor chip
semiconductor device
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JP2017152581A (ja
Inventor
浩二 荒木
浩二 荒木
服部　聡
聡 服部
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Priority to JP2016034711A priority Critical patent/JP6462609B2/ja
Priority to US15/253,514 priority patent/US20170250137A1/en
Publication of JP2017152581A publication Critical patent/JP2017152581A/ja
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Publication of JP6462609B2 publication Critical patent/JP6462609B2/ja
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Description

本発明の実施形態は、半導体装置に関する。
フレームベッドに半導体チップをはんだ等の接合材により接合し、半導体チップ上の電極をワイヤボンディングにより結線し、モールド樹脂により封止した構造の半導体装置はよく知られている。
一方、ワイヤボンディングの代わりに、板状の導電性金属部材を用い、半導体チップ上の電極を結線する半導体装置もよく知られている。
特開２００１−３０８２３８号公報
本発明が解決しようとする課題は、安定した電気接続を有する半導体装置を提供することにある。
実施形態の半導体装置は、第１の配線と、半導体チップと、第１の配線と半導体チップの間に設けられ、半導体チップに直接接し第１の融点を有する第１の接合材と、第１の接続部と、第１の接続部の反対側に設けられた第２の接続部と、を有する第２の配線と、半導体チップと第１の接続部の間に設けられ第１の融点より高い第２の融点を有する第２の接合材と、第３の配線と、第２の接続部と第３の配線の間に設けられ第２の融点より低い第３の融点を有する第３の接合材と、を備える。
本実施形態の半導体装置の模式断面図である。 本実施形態の半導体装置の模式図である。 比較形態となる半導体装置の模式図である。
以下、図面を用いて本発明の実施形態を説明する。
本明細書中、同一又は類似する部材については、同一の符号を付し、重複する説明を省略する場合がある。
本明細書中、部品等の位置関係を示すために、図面の上方向を「上」、図面の下方向を「下」と記述する。本明細書中、「上」、「下」の概念は、必ずしも重力の向きとの関係を示す用語ではない。
（第１の実施形態）
本実施形態の半導体装置は、第１の配線と、半導体チップと、第１の配線と半導体チップの間に設けられ第１の融点を有する第１の接合材と、第１の接続部と、第１の接続部の反対側に設けられた第２の接続部と、を有する第２の配線と、半導体チップと第１の接続部の間に設けられ第１の融点より高い第２の融点を有する第２の接合材と、第３の配線と、第２の接続部と第３の配線の間に設けられ第２の融点より低い第３の融点を有する第３の接合材と、を備える。
図１は、本実施形態の半導体装置１００の模式断面図である。図２は、本実施形態の半導体装置１００の模式図である。図２（ａ）は、本実施形態の半導体装置１００の第１の面４２及び第２の面５２の模式図である。
半導体装置１００は、第１の配線（フレームベッド）４０と、第３の配線（リード）５０と、半導体チップ１０と、第１の接合材２０と、第２の接合材２２と、第３の接合材２４と、第２の配線（コネクタ）３０と、モールド樹脂６０と、を有する。
半導体チップ１０は、例えばｎ型の縦型ＭＯＳＦＥＴ（Ｍｅｔａｌ−Ｏｘｉｄｅ−Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｆｉｅｌｄ Ｅｆｆｅｃｔ Ｔｒａｎｓｉｓｔｏｒ：金属−酸化物−半導体電界効果トランジスタ）である。半導体チップ１０の下側の面には図示しないドレイン電極が設けられている。また、半導体チップの上側の面には、ソース電極である電極１２と、ゲート電極であるゲートパッド１４と、が設けられている。封止樹脂１６は、ＭＯＳＦＥＴや電極を封止する樹脂で、例えばポリイミドが好ましく用いられる。なお半導体チップ１０は、例えばＩＧＢＴ（Ｉｎｓｕｌａｔｅｄ Ｇａｔｅ Ｂｉｐｏｌａｒ Ｔｒａｎｓｉｓｔｏｒ：絶縁ゲートバイポーラトランジスタ）であっても好ましく用いることが出来る。
第２の配線３０は、例えば、銅等の導電性金属部材を折り曲げることにより形成された配線である。なお、第２の配線３０は、切削加工、押出加工、引き抜き加工、鋳造、鍛造、つぶし加工又は放電加工等により形成されたものであっても良い。第２の配線３０は、第１の接続部３２と、第１の接続部３２の反対側に設けられた第２の接続部３４と、を有する。
第１の配線４０及び第３の配線５０は、例えば銅（や鉄ニッケル合金）等の金属を含む。第１の配線４０は第１の面４２を有する。第３の配線５０は第２の面５２を有する。
第１の接合材２０、第２の接合材２２及び第３の接合材２４は、例えばはんだである。第１の接合材２０は、第１の融点を有する。第１の接合材２０は第１の配線４０と半導体チップ１０の間に設けられている。第１の面４２は、第１の接合材２０により半導体チップ１０のドレイン電極と電気的に接続されている。第２の接合材２２は第１の融点より高い第２の融点を有する。第２の接合材２２は半導体チップ１０と第１の接続部３２の間に設けられている。半導体チップ１０の電極１２は、第２の接合材２２により、第１の接続部３２と電気的に接続されている。第３の接合材２４は第２の融点より低い第３の融点を有する。第３の接合材２４は第２の接続部３４と第３の配線５０の間に設けられている。第２の面５２は、第３の接合材２４により、第２の接続部３４と電気的に接続されている。
第１の接合材２０と第３の接合材２４はＰｂ（鉛）とＳｎ（スズ）とＡｇ（銀）を含む
Ｐｂ−Ｓｎ−Ａｇ系はんだであることが好ましい。また、第２の接合材２２はＳｎとＳｂ（アンチモン）とＡｇとＣｕを含むＳｎ−Ｓｂ−Ａｇ―Ｃｕ系はんだであることが好ましい。あるいは、第１の接合材２０は、ＳｎとＡｇを含むＳｎ−Ａｇ系はんだであっても良い。
モールド樹脂６０は、第１の配線４０と、第３の配線５０と、半導体チップ１０と、第１の接合材２０と、第２の接合材２２と、第３の接合材２４と、第２の配線３０を封止する。例えば、シリカ（ＳｉＯ２）等のフィラーを含むエポキシ樹脂は、モールド樹脂６０として好ましく用いることが出来る。
第１の接合材２０と第１の面の端４４の第１の距離Ｌ１は第２の接合材２２と電極の端１３の第２の距離Ｌ２より長い。また、第３の接合材２４と第２の面の端５４の第３の距離Ｌ３は第２の距離Ｌ２より長い。なお電極１２が複数設けられている場合には、複数の電極１２のうち最も長い距離を有する電極１２について、Ｌ２をとる。また、第１の面４２及び第２の面４４に電気伝導性を有しない部分が含まれている場合には、その電気伝導性を有しない部分を除いて第１の距離Ｌ１及び第３の距離Ｌ３を求める。
第１の融点は第３の融点より低いことが更に好ましい。この場合、第１の距離Ｌ１は第３の距離Ｌ３より長いことが好ましい。
図２（ｂ）、図２（ｃ）、図２（ｄ）、図２（ｅ）は、本実施形態の半導体装置１００の第１の面の端４４を説明する模式図である。ｘ軸に直交する一の軸をｙ軸、ｘ軸及びｙ軸に直交する軸をｚ軸とする。第１の配線４０が図２（ｂ）に示されるような、ｘｙ面に平行な長方形の第１の面４２を有する直方体であると仮定する。この場合、図２（ｃ）において示されるような、上述の長方形の第１の面４２の周囲における４辺が、第１の面の端４４である。また、第１の配線４０が図２（ｄ）に示されるような、ｘｙ面内に平行な円形の第１の面４２を有する円柱であると仮定する。この場合、図２（ｅ）において示されるような、上述の円形の第１の面４２の周囲における円が第１の面の端４４である。なお、電極の端１３と第２の面の端５４も第１の面の端４４と同様に説明されるものである。
次に、本実施形態の半導体装置１００の製造方法について記載する。まず、第１の配線４０上に、例えばディスペンス等により第１の接合材２０を塗布する。次に、第１の接合材２０上に半導体チップ１０を配置する。次に、半導体チップ１０上に、例えばディスペンス等により第２の接合材２２を塗布する。次に、第３の配線５０上に、例えばディスペンス等により第３の接合材２４を塗布する。次に、第２の接合材２２及び第３の接合材２４上に、第２の配線３０を配置する。次に、例えばリフロー炉にて第１の接合材２０、第２の接合材２２及び第３の接合材２４を溶融・固着させる。次に、第１の配線４０と、第３の配線５０と、半導体チップ１０と、第１の接合材２０と、第２の接合材２２と、第３の接合材２４と、第２の配線３０をモールド樹脂６０で封止する。なお本実施形態の半導体装置１００の製造方法は、上述の方法に限定されない。
次に、本実施形態の作用効果を記載する。
図３は、本実施形態の比較形態となる半導体装置８００の模式図である。ここで半導体装置８００においては、第１の接合材２０、第２の接合材２２及び第３の接合材２４が同一の融点を有するものとする。一般にリフロー炉内においては±１０度程度の温度の不均一性がある。そのため、リフロー炉内の温度を上げて第１の接合材２０、第２の接合材２２及び第３の接合材２４すべてを溶融させた後に第１の接合材２０、第２の接合材２２及び第３の接合材２４を固化させる時には、第１の接合材２０又は第３の接合材２４が第２の接合材２２より先に固化することがある。この場合、図３に示した矢印のように半導体チップ１０と第２の配線３０が動き、第１の接続部３２が半導体チップ１０の電極１２を有しない部分と接触して電気接続不良が起こりやすくなる。
本実施形態の半導体装置１００においては、第２の融点は第１の融点より高い。また、第３の融点は第２の融点より低い。はんだ付けにおいては、セルフアラインメント効果と呼ばれる、液体状態のはんだが示す表面張力のために部品が液体状態のはんだ表面の中心付近に配置される効果がある。第１の接合材２０、第２の接合材２２及び第３の接合材２４のすべてが溶融している時には、半導体チップ１０は溶融している第１の接合材２０表面の中心付近に配置され、第１の接続部３２は溶融している第２の接合材２２表面の中心付近に配置され、第２の接続部３４は溶融している第３の接合材２４表面の中心付近に配置される。この状態を保ちつつリフロー炉内において冷却がおこると、まず高い融点を有する第２の接合材２２が、半導体チップ１０と第２の接続部３２の位置関係を良好に保ちつつ固化する。すると、半導体チップ１０と第２の接合材２２と第２の配線３０は相対的な位置関係が固定された構造物となる。
次に、半導体チップ１０と第２の接合材２２と第２の配線３０を含む上述の構造物は、はんだのセルフアラインメント性により、溶融した第１の接合材２０表面の中心付近に半導体チップ１０が配置され、また溶融した第３の接合材２４表面の中心付近に第２の接続部３４が配置されて保持される。次に、第１の接合材２０及び第３の接合材２４が固化する。このような順で固化が起こると、上述の構造物は第２の接合材２２により固定されていて曲がったりしないため、半導体チップ１０と第１の配線４０及び第２の接続部３２と第３の配線５０について、位置関係が良好に保たれたままで接合が行われる。よって、安定した電気接続を有する半導体装置１００を得ることが可能になる。
第１の距離Ｌ１は第２の距離Ｌ２より長く、第３の距離Ｌ３は第２の距離Ｌ２より長いことにより、所定の位置からの位置ずれ量に余裕をもった状態で半導体チップ１０及び第２の配線３０が第１の配線４０上及び第３の配線５０上に固定されることが出来る。これにより、さらに安定した電気接続を有する半導体装置１００の提供が可能になる。
第１の融点が第３の融点より低い場合、リフロー炉内の温度が低下していく過程において、第２の接合材２２と第３の接合材２４が固化することにより、第３の配線５０、第３の接合材２４、第２の配線３０，第２の接合材２２及び半導体チップ１０が固定されて一体となったものがつくられる。そしてこの後に、第１の接合材２０が固化する。この場合、半導体チップ１０は第２の接合材２２により第２の配線３０に固定されているため、半導体チップ１０が意図しない位置ずれを起こしづらくなり、半導体チップ１０の電極１２を有しない部分と第１の配線４０が接触して電気接続不良を起こすことが発生しづらくなる。なおこの場合、第１の距離Ｌ１が第３の距離Ｌ３より長いことにより、第１の配線４０上の位置ずれ量が第３の配線５０上の位置ずれ量より大きくなるため、さらに安定して半導体チップを第１の配線４０上に固定することが可能になる。
第１の接合材２０と第３の接合材２４はＰｂ（鉛）とＳｎ（スズ）とＡｇ（銀）を含む
Ｐｂ−Ｓｎ−Ａｇ系はんだであることが好ましい。また、第２の接合材２２はＳｎとＳｂ（アンチモン）とＡｇとＣｕを含むＳｎ−Ｓｂ−Ａｇ―Ｃｕ系はんだであることが好ましい。Ｐｂ−Ｓｂ−Ａｇ系はんだの融点は３０７℃でＳｎ−Ｓｂ−Ａｇ―Ｃｕ系はんだの融点は３５０℃であるため、第１の融点より第２の融点を高く、かつ第２の融点より第３の融点を低くすることが出来るためである。
あるいは、第１の接合材２０は、ＳｎとＡｇを含むＳｎ−Ａｇ系はんだであっても良い。Ｓｎ−Ａｇ系はんだの融点は２３０℃であるため、第１の融点より第２の融点を高く、かつ第２の融点より第３の融点を低く、さらに第１の融点を第３の融点より低くすることが出来るためである。
以上、本実施形態の半導体装置によれば、安定した電気接続を有する半導体装置の提供が可能になる。
（第２の実施形態）
本実施形態の半導体装置は、第１の融点が第３の融点より高い点で、第１の実施形態の半導体装置と異なっている。ここで、第１の実施形態と重複する点については、記載を省略する。
第１の融点が第３の融点より高い場合には、第１の接合材２０と第２の接合材２２が固化した状態で、第２の接続部３４が溶融した第３の接合材４２の表面上に配置されることになる。この場合は、第３の接合材２４により、第３の配線５０上に安定して第２の接続部３４を固定することが可能となる。なおかかる場合には、第１の接合材２０としてＰｂ−Ｓｎ−Ａｇ系はんだを、第２の接合材２２としてＳｎ−Ｓｂ−Ａｇ―Ｃｕ系はんだを、第３の接合材２４としてＳｎ−Ａｇ系はんだを用いることが好ましい。また、第３の距離Ｌ３は第１の距離Ｌ１より長いことにより、さらに安定して第３の配線５０上に第２の接続部３４を固定することが可能となる。
以上、本実施形態の半導体装置によれば、安定した電気接続を有する半導体装置の提供が可能になる。
本発明のいくつかの実施形態及び実施例を説明したが、これらの実施形態及び実施例は、例として提示したものであり、発明の範囲を限定することは意図していない。これら新規な実施形態は、その他の様々な形態で実施されることが可能であり、発明の要旨を逸脱しない範囲で、種々の省略、置き換え、変更を行うことが出来る。これら実施形態やその変形は、発明の範囲や要旨に含まれるとともに、特許請求の範囲に記載された発明とその均等の範囲に含まれる。
１０ 半導体チップ
１２ 電極
１３ 電極の端
１４ ゲートパッド
１６ 封止樹脂
２０ 第１の接合材
２２ 第２の接合材
２４ 第３の接合材
３０ 第２の配線（コネクタ）
３２ 第１の接続部
３４ 第２の接続部
４０ 第１の配線（フレームベッド）
４２ 第１の面
４４ 第１の面の端
５０ 第３の配線（リード）
５２ 第２の面
５４ 第２の面の端
６０ モールド樹脂
１００ 半導体装置
８００ 半導体装置

Claims (6)

  1. 第１の配線と、
    半導体チップと、
    前記第１の配線と前記半導体チップの間に設けられ、前記半導体チップに直接接し第１の融点を有する第１の接合材と、
    第１の接続部と、前記第１の接続部の反対側に設けられた第２の接続部と、を有する第２の配線と、
    前記半導体チップと前記第１の接続部の間に設けられ前記第１の融点より高い第２の融点を有する第２の接合材と、
    第３の配線と、
    前記第２の接続部と前記第３の配線の間に設けられ前記第２の融点より低い第３の融点を有する第３の接合材と、
    を備える半導体装置。
  2. 前記第１の接合材又は前記第３の接合材は鉛とスズと銀を含み、前記第２の接合材はスズとアンチモンと銀を含む請求項１記載の半導体装置。
  3. 前記第１の配線は前記第１の接合材により前記半導体チップと電気的に接続された第１の面を有し、
    前記第３の配線は前記第３の接合材により前記第２の接続部と電気的に接続された第２の面を有し、
    前記半導体チップは前記第２の接合材により前記第１の接続部と電気的に接続された電極を有し、
    前記第１の接合材と前記第１の面の端の第１の距離は前記第２の接合材と前記電極の端の第２の距離より長く、
    前記第３の接合材と前記第２の面の端の第３の距離は前記第２の距離より長い、
    請求項１又は請求項２記載の半導体装置。
  4. 前記第１の融点は前記第３の融点より低い請求項１乃至請求項３いずれか一項記載の半導体装置。
  5. 前記第１の距離は前記第３の距離より長い請求項３記載の半導体装置。
  6. 第１の配線と、
    半導体チップと、
    前記第１の配線と前記半導体チップの間に設けられ第１の融点を有する第１の接合材と、
    第１の接続部と、前記第１の接続部の反対側に設けられた第２の接続部と、を有する第２の配線と、
    前記半導体チップと前記第１の接続部の間に設けられ前記第１の融点より高い第２の融点を有する第２の接合材と、
    第３の配線と、
    前記第２の接続部と前記第３の配線の間に設けられ前記第２の融点より低い第３の融点を有する第３の接合材と、
    を備え、
    前記第１の配線は前記第１の接合材により前記半導体チップと電気的に接続された第１の面を有し、
    前記第３の配線は前記第３の接合材により前記第２の接続部と電気的に接続された第２の面を有し、
    前記半導体チップは前記第２の接合材により前記第１の接続部と電気的に接続された電極を有し、
    前記第１の接合材と前記第１の面の端の第１の距離は前記第２の接合材と前記電極の端の第２の距離より長く、
    前記第３の接合材と前記第２の面の端の第３の距離は前記第２の距離より長い、
    半導体装置。
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