JP6462532B2 - Semiconductor element storage package and semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor element housing package for housing a semiconductor element and a semiconductor device including the same.

  Optical semiconductor elements such as light emitting elements and light receiving elements and semiconductor elements such as signal processing arithmetic elements are housed in a semiconductor element housing package for protecting the semiconductor elements and connecting the semiconductor elements and external wiring. .

  As a package for housing a semiconductor element, for example, there is a package constituted by a peripheral wall body in which a plurality of rectangular plate-shaped wall bodies are fitted to each other to form a frame shape (see Patent Document 1).

International Publication No. 2014/069432

  In the above-described conventional package for storing semiconductor elements, the wall body may be warped or deformed. In such a case, a plurality of wall bodies are fitted to each other, and the fitting portion is made of brazing material or the like. When the peripheral wall body is formed by bonding with a bonding material, there is a possibility that a positional shift occurs in each wall body.

  SUMMARY OF THE INVENTION An object of the present invention is a package for housing a semiconductor element having a peripheral wall body in which a plurality of rectangular plate-like wall bodies are fitted together to form a frame shape, and each wall body is displaced in the peripheral wall body. It is an object of the present invention to provide a package for housing a semiconductor element in which the above is suppressed, and a semiconductor device including the same.

  A package for housing a semiconductor element of one embodiment of the present invention includes a plate-like base body having a main surface including a placement region on which a semiconductor element is placed, and the main surface of the base body so as to surround the placement region. A peripheral wall body having a frame shape, and the peripheral wall body is a rectangular plate-shaped first wall body erected perpendicularly to the main surface, and one end in a direction parallel to the main surface The first wall is provided with a first protrusion, the other end is provided with a second protrusion, and a through-opening penetrating in the thickness direction is provided. In addition, the second wall body is a rectangular plate-shaped second wall facing the first wall body, the third protrusion is provided at one end in a direction parallel to the main surface, and the fourth protrusion is provided at the other end. A second wall body provided with a portion and a rectangular plate-shaped third wall body that is erected vertically to the main surface and is adjacent to the first wall body and the second wall body Thus, a first concave portion that fits with the first convex portion is provided at one end portion in a direction parallel to the main surface, and a second concave portion that fits with the third convex portion is provided at the other end portion. A third wall having a height higher than that of the first wall and the second wall, and adjacent to the first wall and the second wall, which are erected vertically to the main surface. A rectangular plate-like fourth wall body, wherein a third concave portion that fits the second convex portion is provided at one end portion in a direction parallel to the main surface, and the fourth convex portion is provided at the other end portion. And a fourth wall body having a height higher than that of the first wall body and the second wall body.

  According to another aspect of the present invention, there is provided a semiconductor device including the semiconductor element storage package and a semiconductor element mounted on a mounting region of the main surface of the base body.

  According to the package for housing a semiconductor element of one aspect of the present invention, the peripheral wall body that is provided on the main surface of the base so as to surround the mounting region on which the semiconductor element is mounted and has a frame shape includes the first convex portion, A first wall provided with a second convex part and a through-opening; a second wall provided with a third convex part and a fourth convex part opposite to the first wall; a first wall; It consists of a 3rd wall body and a 4th wall body adjacent to a 2nd wall body. The third wall body and the fourth wall body are higher in height than the first wall body and the second wall body. The third wall body is provided with a first concave portion fitted to the first convex portion at one end portion in a direction parallel to the main surface of the base body, and a second concave portion fitted to the third convex portion at the other end portion. Provided. The fourth wall body is provided with a third concave portion that fits with the second convex portion at one end portion in a direction parallel to the main surface of the base, and the fourth concave portion that fits with the fourth convex portion at the other end portion. Provided.

  In the peripheral wall body of the semiconductor element storage package configured as described above, the third wall body and the fourth wall body are provided on the first wall body provided with the through opening and the second wall body facing the first wall body. Since the wall body is fitted, and the third wall body and the fourth wall body are higher than the first wall body and the second wall body, the upper end of the first wall body and the third wall body and the fourth wall body are the same. A step is formed between the upper end of the wall body and a step is also formed between the upper end of the second wall body and the upper ends of the third wall body and the fourth wall body. In the fitting structure between the first wall body, the third wall body, and the fourth wall body, and in the fitting structure between the second wall body, the third wall body, and the fourth wall body, joining of a brazing material or the like When forming a peripheral wall body by bonding with a material, a liquid pool of the bonding material can be formed at the step, so that each wall body can be a firmly bonded peripheral wall body. It is suppressed that position shift arises in a wall.

  According to the semiconductor device of one embodiment of the present invention, a semiconductor element storage package including a peripheral wall body in which displacement of each wall body is suppressed, and a semiconductor element stored in the semiconductor element storage package; It is realized by.

It is a disassembled perspective view which shows the structure of the semiconductor device 1 provided with the package 2 for semiconductor element accommodation which is one Embodiment of this invention. FIG. 3 is an exploded perspective view showing a state in which a semiconductor element 3 is housed in a semiconductor element housing package 2 in the semiconductor device 1. 2 is a perspective view showing a configuration of a semiconductor element storage package 2. FIG. 2 is an exploded perspective view showing a configuration of a semiconductor element storage package 2. FIG. 3 is a plan view of the semiconductor element storage package 2 as viewed from the upper side perpendicular to the main surface 21a of the base 21. FIG. FIG. 5 is a rear view of the semiconductor element storage package 2 as viewed from the back side perpendicular to the second wall body 222. FIG. 3 is a front view of the semiconductor element storage package 2 as viewed from the front side perpendicular to the first wall body 221. FIG. 5 is a side view of the semiconductor element storage package 2 as viewed from the side perpendicular to the fourth wall body 224. It is sectional drawing which cut | disconnected the semiconductor element storage package 2 shown in FIG. 5 by cut surface line AA. 4 is an enlarged perspective view showing the vicinity of a first wall 221 of a package 2 for housing a semiconductor element. FIG.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is an exploded perspective view showing a configuration of a semiconductor device 1 having a package 2 for housing a semiconductor element according to an embodiment of the present invention.
FIG. 2 is an exploded perspective view showing a state in which the semiconductor element 3 is housed in the semiconductor element housing package 2 in the semiconductor device 1. FIG. 3 is a perspective view showing the configuration of the semiconductor element storage package 2, and FIG. 4 is an exploded perspective view showing the configuration of the semiconductor element storage package 2. 5 is a plan view of the semiconductor element storage package 2 as viewed from the upper side perpendicular to the main surface 21a of the base 21. FIG. 6 is a back view of the semiconductor element storage package 2 perpendicular to the second wall 222. 7 is a rear view as seen from the side, FIG. 7 is a front view of the semiconductor element accommodation package 2 as seen from the front side perpendicular to the first wall body 221, and FIG. It is the side view seen from the side perpendicular | vertical to the wall body 224. 9 is a cross-sectional view of the semiconductor element storage package 2 shown in FIG. 5 taken along the cutting plane line AA. FIG. 10 is an enlarged view of the vicinity of the first wall 221 of the semiconductor element storage package 2. FIG.

  The semiconductor device 1 includes a semiconductor element storage package 2, a semiconductor element 3 stored in the semiconductor element storage package 2, and a lid 5. The semiconductor element housing package 2 is a package for housing the semiconductor element 3 and includes a base body 21, a peripheral wall body 22, a terminal member 23, and a seal ring 24 as shown in FIGS. Consists of.

The base 21 is formed in a plate shape, and has a main surface 21 a including a mounting region R on which the semiconductor element 3 is mounted via the element mounting base 4. The base 21 is made of, for example, a metal material such as copper, iron, tungsten, molybdenum, nickel, or cobalt, an alloy material containing these metal materials, or a composite material thereof. The thermal conductivity of the base body 21 is set to, for example, 7 W / (m · K) to 398 W / (m · K). The Young's modulus of the base body 21 is set to 110 GPa to 345 GPa, for example. The thermal expansion coefficient of the base 21 is set to 4 × 10 ⁻⁶ / ° C. to 22 × 10 ⁻⁶ / ° C., for example.

  In the present embodiment, the base body 21 is formed in a rectangular plate shape, and the size of the base body 21 is set such that, for example, the long side length is set to 10 mm to 50 mm, and the short side length is set to 5 mm to 20 mm. And the thickness is set to 0.2 mm to 5 mm.

  In addition, the base 21 can be manufactured by ingot obtained by casting and solidifying a molten metal material, alloy material or composite material into a mold by metal processing such as conventionally known rolling or punching.

  Further, in order to suppress oxidative corrosion of the substrate 21, a metal layer such as nickel or gold may be formed on the outer surface of the substrate 21 by electroplating or electroless plating.

  The peripheral wall body 22 has a main surface 21a of the base body 21 along the outer peripheral edge of the rectangular plate-shaped base body 21 so as to surround the mounting region R on which the semiconductor element 3 is mounted via the element mounting base 4. It is a member having a frame shape and having an open upper end. The peripheral wall body 22 is joined to the main surface 21a of the base body 21 via a joining material such as a brazing material. The brazing material is made of, for example, silver, copper, gold, zinc, aluminum, or magnesium, and may contain an additive such as nickel, cadmium, or phosphorus.

The peripheral wall body 22 is made of, for example, a metal material such as copper, iron, tungsten, molybdenum, nickel, or cobalt, an alloy material containing these metal materials, or a composite material thereof. The thermal conductivity of the peripheral wall body 22 is set to 7 W / (m · K) to 398 W / (m · K), for example. The Young's modulus of the peripheral wall body 22 is set to 110 GPa to 345 GPa, for example. The thermal expansion coefficient of the peripheral wall body 22 is set to 4 × 10 ⁻⁶ / ° C. to 22 × 10 ⁻⁶ / ° C., for example.

The shape of the peripheral wall body 22 when viewed from the upper side perpendicular to the main surface 21a of the base body 21 is a rectangular ring, and the size of the outer shape is set, for example, to a length of 10 mm to 50 mm on the long side, The length of the short side is set to 5 mm to 20 mm. The length (thickness) from the inner peripheral edge to the outer peripheral edge of the peripheral wall body 22 when viewed from the upper side perpendicular to the main surface 21a of the base body 21 is set to 0.5 mm to 3 mm, for example. Furthermore, the length (height) from the upper end to the lower end of the peripheral wall body 22 is set to, for example, 5 mm to 20 mm.

  The peripheral wall body 22 includes a rectangular plate-shaped first wall body 221 erected perpendicularly to the main surface 21 a along one short side of the rectangular plate-shaped base body 21, and the other short side of the base body 21. A rectangular plate-like second wall body 222 that is erected perpendicularly to the main surface 21a and that opposes the first wall body 221, and is erected perpendicularly to the main surface 21 a along one long side of the base 21. A rectangular plate-shaped third wall body 223 adjacent to the first wall body 221 and the second wall body 222, and a first wall erected perpendicularly to the main surface 21a along the other long side of the base body 21 A rectangular plate-like fourth wall body 224 adjacent to the body 221 and the second wall body 222.

  The first wall body 221 is erected on the main surface 21a such that the opposing short sides are perpendicular to the main surface 21a of the base body 21, and the lower end portion of the one end 221a in the direction parallel to the main surface 21a. Are provided with a first protrusion 221c, a second protrusion 221d at the lower end of the other end 221b, and a through-opening 221e penetrating in the thickness direction. In the first wall body 221, the first protrusions 221c and the second protrusions 221d are terminal members to be described later in the direction perpendicular to the main surface 21a when viewed from the direction perpendicular to the first wall body 221. It is located below 23.

  In this embodiment, the 1st convex part 221c and the 2nd convex part 221d of the 1st wall body 221 are each projected and formed in the direction away from the through opening 221e. In the first wall 221, the first protrusion 221 c and the second protrusion 221 d have the same shape, and the shape when viewed from the direction perpendicular to the first wall 221 is a rectangular shape. The length along one end 221a of the first convex portion 221c and the length along the other end 221b of the second convex portion 221d when viewed from the direction perpendicular to the first wall 221 are: For example, it is set to 0.5 mm to 5 mm, and the protruding lengths of the first convex portion 221c and the second convex portion 221d are set to 0.5 mm to 3 mm, for example.

  Moreover, in this embodiment, the through-opening 221e of the 1st wall body 221 is circular shape, The diameter is set to 1 mm-10 mm, for example.

  Further, in the first wall body 221, the through-opening 221e is seen from the first convex portion 221c and the second convex portion 221d in the direction perpendicular to the main surface 21a when viewed from the direction perpendicular to the first wall body 221. Is also located on the upper side and is located in the center in the direction parallel to the main surface 21a.

  The second wall body 222 is erected on the main surface 21a so as to face the first wall body 221 so that the opposing short side is perpendicular to the main surface 21a of the base body 21, and is parallel to the main surface 21a. A third convex portion 222c is provided at the lower end portion of the one end portion 222a in the direction, and a fourth convex portion 222d is provided at the lower end portion of the other end portion 222b. In the second wall 222, the third convex portion 222c and the fourth convex portion 222d are terminal members described later with respect to the direction perpendicular to the main surface 21a when viewed from the direction perpendicular to the second wall 222. It is located below 23.

In this embodiment, the 3rd convex part 222c and the 4th convex part 222d of the 2nd wall body 222 are each projected and formed in the outward side. In the second wall 222, the third convex portion 222c and the fourth convex portion 222d have the same shape, and the shape when viewed from the direction perpendicular to the second wall 222 is a rectangular shape. When viewed from the direction perpendicular to the second wall 222, the length along the one end 222a of the third protrusion 222c and the length along the other end 222b of the fourth protrusion 222d are: For example, it is set to 0.5 mm to 5 mm, and the protruding lengths of the third convex portion 222c and the fourth convex portion 222d are set to 0.5 mm to 3 mm, for example.

  The third wall body 223 is erected on the main surface 21 a adjacent to the first wall body 221 and the second wall body 222 so that the opposing short sides are perpendicular to the main surface 21 a of the base body 21. A first concave portion 223c that fits with the first convex portion 221c of the first wall body 221 is provided at the lower end portion of the one end portion 223a in the direction parallel to the main surface 21a, and the second wall is provided at the lower end portion of the other end portion 223b. A second recess 223d that fits with the third protrusion 222c of the body 222 is provided. Note that the upper end portion of the third wall body 223 is partially cut out so as to penetrate in the thickness direction, and a terminal fitting notch portion 223h into which a terminal member 23 described later is fitted is formed.

  The third wall body 223 is higher in height than the first wall body 221 and the second wall body 222. That is, the upper end 223 e of the third wall body 223 is positioned above the upper end 221 f of the first wall body 221 and the upper end 222 e of the second wall body 222.

  In the present embodiment, the length along one end 223a of the first recess 223c and the length along the other end 223b of the second recess 223d when viewed from the direction perpendicular to the third wall 223. The length is set to, for example, 0.5 mm to 5 mm, and the recess lengths of the first recess 223c and the second recess 223d (the length from the opening edge of the recess to the bottom surface of the recess) are, for example, 0.5 mm to Set to 3 mm.

  The fourth wall body 224 is erected on the main surface 21a adjacent to the first wall body 221 and the second wall body 222 so that the opposing short sides are perpendicular to the main surface 21a of the base body 21. A third recess 224c that fits with the second protrusion 221d of the first wall 221 is provided at the lower end of the one end 224a in the direction parallel to the main surface 21a, and the second wall is provided at the lower end of the other end 224b. A fourth recess 224d that fits with the fourth protrusion 222d of the body 222 is provided. Note that the upper end portion of the fourth wall body 224 is partially cut out so as to penetrate in the thickness direction, and a terminal fitting notch portion 224h into which a terminal member 23 described later is fitted is formed.

  The fourth wall body 224 is higher in height than the first wall body 221 and the second wall body 222. That is, the upper end 224e of the fourth wall body 224 is located above the upper end 221f of the first wall body 221 and the upper end 222e of the second wall body 222.

  In the present embodiment, the length along one end 224a of the third recess 224c and the length along the other end 224b of the fourth recess 224d when viewed from the direction perpendicular to the fourth wall body 224. The length is set to 0.5 mm to 3 mm, for example, and the recess lengths of the third recess 224c and the fourth recess 224d (the length from the opening edge of the recess to the bottom surface of the recess) are, for example, 0.5 mm to Set to 3 mm.

  A seal ring 24 is joined to a top surface of the peripheral wall body 22 configured as described above by a joining material 25 such as a brazing material. The seal ring 24 is a rectangular annular member that overlaps with the peripheral wall body 22 provided on the main surface 21 a when viewed from a direction perpendicular to the main surface 21 a of the base 21. The seal ring 24 is made of a metal material having excellent thermal conductivity such as copper, iron, tungsten, molybdenum, nickel, or cobalt.

The first convex portion 221c of the first wall body 221 and the first concave portion 223c of the third wall body 223 are fitted, and the second convex portion 221d of the first wall body 221 and the third concave portion 224c of the fourth wall body 224 are fitted. And the third convex portion 222c of the second wall body 222 and the second concave portion 223d of the third wall body 223 are fitted, and the fourth convex portion 222d and the fourth wall body of the second wall body 222 are fitted. The peripheral wall body 22 is formed in a state where the fourth recess 224 d of 224 is fitted, and the bonding material 25 is disposed along the upper surface of the peripheral wall body 22. Then, in a state where the seal ring 24 is placed on the bonding material 25, the bonding material 25 is melted and connected to the seal ring 24 by applying heat to the seal ring 24. Further, the melted bonding material 25 is cooled and solidified, whereby the seal ring 24 is fixed to the peripheral wall body 22 via the bonding material 25.

  Here, in the peripheral wall body 22 of this embodiment, since the 3rd wall body 223 and the 4th wall body 224 are higher than the 1st wall body 221 and the 2nd wall body 222, the 1st wall body 221 of A step is formed between the upper end 221f, the upper end 223e of the third wall body 223, and the upper end 224e of the fourth wall body 224, and the upper end 222e of the second wall body 222 and the upper end 223e of the third wall body 223. Further, a step is also formed between the upper end 224e of the fourth wall body 224. Accordingly, the fitting structure between the first wall body 221 and the third wall body 223 and the fourth wall body 224, and the fitting structure between the second wall body 222 and the third wall body 223 and the fourth wall body 224. In the structure, when the peripheral wall body 22 is formed by bonding with the bonding material 25, a liquid pool of the bonding material 25 melted between the upper surface of the peripheral wall body 22 and the seal ring 24 can be formed at the step. .

  A part of the bonding material 25 melted between the upper surface of the peripheral wall body 22 and the seal ring 24 includes one end portion of the first wall body 221 including the space between the first protrusion 221c and the first recess 223c. One of the other end portion 221b of the first wall body 221 and the fourth wall body 224 including the space between 221a and the one end portion 223a of the third wall body 223 and the space between the second protrusion 221d and the third recess 224c. Between the end 224a, between the third protrusion 222c and the second recess 223d, between the one end 222a of the second wall 222 and the other end 223b of the third wall 223, the fourth It flows between the other end portion 222b of the second wall body 222 and the other end portion 224b of the fourth wall body 224 including between the convex portion 222d and the fourth concave portion 224d, and the end portions are connected to each other. Is done. Further, the joining material 25 that has flowed in is cooled and solidified, so that the first wall body 221, the second wall body 222, the third wall body 223, and the fourth wall body are engaged with each other between the end portions. Each wall body of 224 is joined by the joining material 25.

  As described above, the fitting structure between the first wall body 221 and the third wall body 223 and the fourth wall body 224, between the second wall body 222 and the third wall body 223 and the fourth wall body 224. In this fitting structure, when the peripheral wall body 22 is formed by bonding with the bonding material 25, a liquid pool of the bonding material 25 melted between the upper surface of the peripheral wall body 22 and the seal ring 24 is formed at the step. Therefore, it can be set as the surrounding wall body 22 to which each wall body was joined firmly, and it is suppressed that position shift arises in each wall body in the surrounding wall body 22. FIG.

  The bonding material 25 for bonding the first wall body 221, the second wall body 222, the third wall body 223, and the fourth wall body 224 has a Young's modulus smaller than the Young's modulus of the base body 21 and the peripheral wall body 22. It is good to be comprised with the material which has.

  Although heat may be generated from the semiconductor element 3 housed in the semiconductor element housing package 2, the base 21 and the peripheral wall body 22 may be thermally expanded by this heat. Therefore, when the Young's modulus of the bonding material 25 is smaller than the Young's modulus of the base body 21 and the peripheral wall body 22, the stress due to thermal expansion of the base body 21 and the peripheral wall body 22 can be reduced by the deformation of the bonding material 25. The Young's modulus of the bonding material 25 is set to 30 GPa to 100 GPa, for example.

  Further, the bonding material 25 may be made of a material having a higher thermal conductivity than the thermal conductivity of the peripheral wall body 22. As such a bonding material 25, for example, a silver solder based on a silver-copper eutectic composition (for example, 71 to 73 mass% silver-27 to 29 mass% copper, JIS name: BAg-8) is used. Good.

The heat generated from the semiconductor element 3 accommodated in the semiconductor element accommodation package 2 is generated by the peripheral wall 2.
2 is easy to hit inside. If the heat spreads inside the peripheral wall 22, the semiconductor element 3 becomes high temperature, and the semiconductor element 3 may malfunction or be damaged. Therefore, when the thermal conductivity of the bonding material 25 is higher than the thermal conductivity of the peripheral wall body 22, the heat that has spread inside the peripheral wall body 22 is easily dissipated to the outside through the bonding material 25. By lowering the inner temperature, it is possible to prevent the semiconductor element 3 from malfunctioning or being damaged. The thermal conductivity of the bonding material 25 is set to, for example, 100 W / (m · K) to 400 W / (m · K).

  Further, the first convex portion 221c of the first wall body 221 and the first concave portion 223c of the third wall body 223 are fitted, and the second convex portion 221d of the first wall body 221 and the third of the fourth wall body 224 are fitted. The concave portion 224c is fitted, the third convex portion 222c of the second wall body 222 and the second concave portion 223d of the third wall body 223 are fitted, and the fourth convex portion 222d and the fourth convex portion 222d of the second wall body 222 are fitted. In a state where the fourth recess 224d of the wall body 224 is fitted, the other end portion of the first wall body 221 is between the one end portion 221a of the first wall body 221 and the one end portion 223a of the third wall body 223. 221b and one end 224a of the fourth wall 224, between one end 222a of the second wall 222 and the other end 223b of the third wall 223, and the other end of the second wall 222 A step D as shown in the example of FIG. 10 is formed between 222b and the other end 224b of the fourth wall body 224. It may be.

  That is, a part of the first wall 221 may protrude outward from the one end 223a of the third wall 223 and the one end 224a of the fourth wall 224, or the third wall The one end 223a of 223 and the one end 224a of the fourth wall 224 may be retracted inward. Further, a part of the second wall 222 may protrude outward from the other end 223b of the third wall 223 and the other end 224b of the fourth wall 224, or the third wall The other end 223b of 223 and the other end 224b of the fourth wall 224 may be retracted inward. Thus, since the meniscus of the bonding material 25 is continuously formed along the step D by forming the step D, the bonding area can be increased and the bonding strength can be improved.

  Further, the semiconductor element housing package 2 of the present embodiment includes a third wall body 223 and a peripheral wall body 22 composed of a first wall body 221, a second wall body 222, a third wall body 223, and a fourth wall body 224. You may comprise so that the 4th wall body 224 may have the fitting structure by a notch part. Specifically, as shown in FIG. 4, in the peripheral wall body 22, the third wall body 223 has a corner portion inside the one end 223 a in a direction parallel to the main surface 21 a of the base 21 cut from the upper end to the lower end. The cutout first cutout portion 223f and the second cutout portion 223g cut out from the upper end to the lower end of the corner portion inside the other end portion 223b are provided. The fourth wall body 224 includes a third notch portion 224f in which a corner portion inside one end portion 224a in a direction parallel to the main surface 21a of the base 21 is notched from the upper end to the lower end, and an inner side of the other end portion 224b. Has a fourth cutout portion 224g cut out from the upper end to the lower end.

  The first wall body 221 has an inner corner portion of one end portion 221a in a direction parallel to the main surface 21a of the base body 21 fitted into the first cutout portion 223f of the third wall body 223, and the other end. An inner corner portion of the portion 221b is fitted into the third cutout portion 224f of the fourth wall body 224. The second wall 222 has an inner corner of one end 222a in a direction parallel to the main surface 21a of the base 21 fitted into the second notch 223g of the third wall 223 and the other end 222b. The inner corner of the second wall 224 fits into the fourth notch 224g of the fourth wall 224.

In the fitting structure of the first wall body 221, the second wall body 222, the third wall body 223, and the fourth wall body 224, the first notch 223f and the second notch 223g are the third wall. The first wall body 221 is provided from the upper end to the lower end of the body 223, and the third notch 224f and the fourth notch 224g are provided from the upper end to the lower end of the fourth wall 224.
Since the first wall body 221 and the second wall body 222 are reinforced in the direction perpendicular to the second wall body 222, warping and deformation of the first wall body 221 and the second wall body 222 can be suppressed. . That is, the first wall body 221 and the second wall body 222 are formed by extending the cutout portions of the first cutout portion 223f, the second cutout portion 223g, the third cutout portion 224f, and the fourth cutout portion 224g. Misalignment caused by warpage or deformation in the direction perpendicular to the direction (the direction from the upper end to the lower end of the third wall body 223 and the fourth wall body 224) is suppressed.

  Further, in the peripheral wall body 22 of the present embodiment, the first convex portion 221c and the second convex portion 221d of the first wall body 221, and the third convex portion 222c and the fourth convex portion 222d of the second wall body 222 are convex. A corner portion of the tip portion may be curved. As a result, stress concentration at the corners of the first and second convex portions 221c and 221d and the third and fourth convex portions 222c and 222d can be alleviated. In addition, the 1st recessed part 223c fitted to the 1st convex part 221c, the 3rd recessed part 224c fitted to the 2nd convex part 221d, the 2nd recessed part 223d fitted to the 3rd convex part 222c, and the 4th convex part 222d The shape of each recess of the fourth recess 224d to be fitted is formed corresponding to the shape of each projection to be fitted. For example, the shape of the first concave portion 223c, the second concave portion 223d, the third concave portion 224c, and the fourth concave portion 224d is the curve when the corner of the tip of each convex portion to be fitted is curved. Any matching shape may be used.

  Further, as described above, in the peripheral wall body 22 of the present embodiment, the terminal fitting notch portion 223 h is formed at the upper end portion of the third wall body 223, and the terminal fitting notch portion is formed at the upper end portion of the fourth wall body 224. A portion 224h is formed. The terminal member 23 is fitted into the terminal fitting notches 223h and 224h.

  The terminal member 23 includes a flat portion 23a having a signal wiring conductor 23aa formed on the upper surface, and a standing wall portion 23b joined to the upper surface of the flat portion 23a with the signal wiring conductor 23aa interposed therebetween. The terminal member 23 is joined to the peripheral wall body 22 and the seal ring 24 by a joining material 25 such as a brazing material in a state of being fitted to the terminal fitting notches 223h and 224h of the peripheral wall body 22.

  The signal wiring conductor 23aa is formed on the upper surface of the flat portion 23a of the terminal member 23 so as to conduct inside and outside of the peripheral wall body 22. The signal wiring conductor 23aa located inside the peripheral wall body 22 is electrically connected to the semiconductor element 3 by a bonding wire or the like. Further, the signal wiring conductor 23aa located outside the peripheral wall body 22 is electrically connected to an external lead terminal (not shown).

  In the terminal member 23, the flat portion 23a and the standing wall portion 23b are made of a ceramic material such as an aluminum oxide sintered body, an aluminum nitride sintered body, or a mullite sintered body. The signal wiring conductor 23aa is made of tungsten, molybdenum, manganese, or the like. A metal layer such as nickel or gold may be formed on the outer surface of the signal wiring conductor 23aa by electroplating or electroless plating.

  As shown in FIGS. 1 and 2, in the semiconductor device 1 of the present embodiment, the semiconductor element storage package 2 configured as described above includes the semiconductor element 3 mounted on the element mounting base 4. The lid body 5 is disposed on the seal ring 24 joined to the upper surface of the peripheral wall body 22 in the semiconductor element housing package 2.

  The semiconductor element 3 is placed on the placement region R on the main surface 21 a of the base 21 via the element placement base 4. In the present embodiment, the semiconductor element 3 is an optical semiconductor element such as a light emitting element or a light receiving element. However, as long as it is a semiconductor element that can be accommodated in the semiconductor element accommodating package 2, other semiconductor elements such as a sensor element and an imaging element. It may be.

  When the semiconductor device 1 is used, an optical fiber is connected and fixed to the through-opening 221e provided in the first wall body 221 in the peripheral wall body 22 via an optical fiber fixing member. If the semiconductor element 3 is a light emitting element such as an LD, for example, light is emitted from the light emitting element in response to an electric signal input from the outside via the signal wiring conductor 23aa of the terminal member 23, and the emitted light is light. Incident on the fiber. If the semiconductor element 3 is a light receiving element such as a PD, for example, light emitted from the optical fiber is irradiated onto the light receiving element, and an electrical signal corresponding to the amount of received light is externally transmitted via the signal wiring conductor 23aa of the terminal member 23. Is output.

  The element mounting base 4 is mounted on the mounting region R on the main surface 21 a of the base 21. The semiconductor element 3 is mounted on the upper surface of the element mounting base 4. The element mounting base 4 is made of a ceramic material such as an aluminum oxide sintered body, an aluminum nitride sintered body, or a mullite sintered body. The element mounting base 4 may be configured by bonding an insulating substrate to a base made of a material such as a copper-tungsten alloy or a copper-molybdenum alloy. The element mounting base 4 only needs to be capable of mounting and fixing the semiconductor element 3, and may be, for example, an electronic cooling element such as a Peltier element.

  The lid 5 is joined to the seal ring 24 joined to the upper surface of the peripheral wall body 22 by a joining material such as brazing material or welding, and seals the space surrounded by the base body 21 and the peripheral wall body 22. The lid 5 is made of, for example, a metal material such as copper, iron, tungsten, molybdenum, nickel, or cobalt, or an alloy material containing these metal materials.

  In the semiconductor device 1 configured as described above, the element mounting base 4 is mounted on the semiconductor element storage package 2 including the peripheral wall body 22 in which the displacement of each wall body is suppressed. Since the semiconductor element 3 is housed, the optical axis deviation caused by the positional deviation between the semiconductor element 3 and the optical fiber fixed to the through-opening 221e provided in the first wall body 221 in the peripheral wall body 22 is suppressed. And the optical transmission efficiency can be improved.

  In addition, this invention is not limited to the example of the above embodiment, A various change may be added in the range which does not deviate from the summary of this invention.

DESCRIPTION OF SYMBOLS 1 Semiconductor device 2 Package for semiconductor element storage 3 Semiconductor element 4 Base for element mounting 5 Lid 21 Base 21a Main surface 22 Peripheral wall 23 Terminal member 23aa Signal wiring conductor 24 Seal ring 25 Bonding material 221 First wall 221c First 1 convex part 221d 2nd convex part 221e Through-opening 222 2nd wall body 222c 3rd convex part 222d 4th convex part 223 3rd wall body 223c 1st recessed part 223d 2nd recessed part 223f 1st notch part 223g 2nd notch Portion 224 Fourth wall 224c Third recess 224d Fourth recess 224f Third notch 224g Fourth notch

Claims (4)

A plate-like substrate having a main surface including a placement region on which a semiconductor element is placed;
A peripheral wall body that is provided on the main surface of the base body so as to surround the placement region and forms a frame shape,
The peripheral wall body is
A rectangular plate-like first wall body erected perpendicularly to the main surface, wherein a first protrusion is provided at one end in a direction parallel to the main surface, and a second protrusion is provided at the other end. A first wall body provided with a through-opening penetrating in the thickness direction,
A rectangular plate-like second wall body standing vertically to the main surface and facing the first wall body, wherein a third convex portion is provided at one end in a direction parallel to the main surface. And the 2nd wall body in which the 4th convex part was provided in the other end, and
A rectangular plate-like third wall that is erected vertically to the main surface and is adjacent to the first wall and the second wall, and is arranged at one end in a direction parallel to the main surface. Than the first wall body and the second wall body provided with a first concave portion that fits with the first convex portion and provided with a second concave portion that fits with the third convex portion at the other end. A third wall with a high height,
A rectangular plate-like fourth wall body that is erected perpendicularly to the main surface and is adjacent to the first wall body and the second wall body, and is disposed at one end in a direction parallel to the main surface. Than the first wall body and the second wall body provided with a third concave portion that fits with the second convex portion and provided with a fourth concave portion that fits with the fourth convex portion at the other end. A package for housing a semiconductor element, comprising a fourth wall body having a high height. The third wall body includes a first cutout portion in which an inner corner portion of one end portion in a direction parallel to the main surface is cut from the upper end to the lower end, and an inner corner portion of the other end portion from the upper end. A second notch cut out over the lower end,
The fourth wall body includes a third cutout portion in which an inner corner of one end in a direction parallel to the main surface is cut from the upper end to the lower end, and an inner corner of the other end from the upper end. A fourth notch cut out over the lower end,
In the first wall body, an inner corner of one end in a direction parallel to the main surface is fitted into the first notch, and an inner corner of the other end is the third notch. Mated with the
In the second wall body, an inner corner of one end in a direction parallel to the main surface is fitted into the second notch, and an inner corner of the other end is the fourth notch. The package for housing a semiconductor element according to claim 1, wherein the package is fitted into a portion.   3. The first wall body according to claim 1, wherein in the first wall body, the through-opening is positioned above the first convex portion and the second convex portion with respect to a direction perpendicular to the main surface. A package for housing a semiconductor element as described. A package for housing a semiconductor element according to any one of claims 1 to 3,
A semiconductor device mounted on a mounting region of the main surface of the base body.

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