JP6458801B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP6458801B2 JP6458801B2 JP2016529244A JP2016529244A JP6458801B2 JP 6458801 B2 JP6458801 B2 JP 6458801B2 JP 2016529244 A JP2016529244 A JP 2016529244A JP 2016529244 A JP2016529244 A JP 2016529244A JP 6458801 B2 JP6458801 B2 JP 6458801B2
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- wirings
- solder
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- wiring
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Description
1.第1の実施の形態(半導体装置;複数の第1電極および複数の第2電極を複数の第1配線および複数の第2配線により斜め方向に相互に接続する例。複数の第1配線および複数の第2配線を折れ線形状とする例。複数の第3配線の各々の上に設けられた第3開口の平面形状を略長方形とし、第3開口の長さをパッケージ基板の熱膨張係数に応じて調整する例)
2.第2の実施の形態(複数の第1配線および複数の第2配線を直線とする例)
3.第3の実施の形態(複数の第1開口および複数の第2開口を長方形とし、複数の第1配線および複数の第2配線を、複数の第1開口および複数の第2開口を斜めに横切って配置する例)
4.第4の実施の形態(第1開口および第2開口を、行方向および列方向の両方に等ピッチ配置し、複数の第1配線および複数の第2配線を、列方向に対して斜め45度方向の直線とする例)
5.変形例1−1(第3開口の平面形状を楕円形とする例)
6.変形例1−2(第3開口内において、配線に拡幅部を設ける例)
7.変形例1−3(第3開口内において、配線に途切れ部を設ける例)
8.変形例1−4(二つの第3開口の角部に斜め切欠き部を設け、その二つの第3開口を、斜め切欠き部どうしを向かい合わせて隣接配置する例)
9.変形例1−5(二つの第3開口の辺に斜め切欠き部を設け、その二つの第3開口を、斜め切欠き部どうしを向かい合わせて隣接配置する例)
10.第5の実施の形態(半導体装置;第3開口内におけるソルダレジスト層の厚みを、基板本体の表面のうち第3開口以外の領域におけるソルダレジスト層の厚みよりも小さくする例)
11.第6の実施の形態(半導体装置;MCM(Multi Chip Module )の例)
12.第7の実施の形態(半導体装置;モールド樹脂で封止する例)
13.第8の実施の形態(半導体装置の製造方法;フラックスを用いて仮付けしたのち一括リフローを行う例)
14.第9の実施の形態(半導体装置の製造方法;ローカルリフローの例)
15.第10の実施の形態(半導体装置の製造方法;熱圧着により仮付けを行う例)
16.第11の実施の形態(半導体装置の製造方法;ツール側の温度を固定して熱圧着を行う例)
17.第12の実施の形態(半導体装置の製造方法;予めパッケージ基板の上にアンダーフィル樹脂を供給する例)
図1は、本開示の第1の実施の形態に係る半導体装置の全体構成を概略的に表したものであり、図2は、この半導体装置のII−II線における断面構成を概略的に表したものである。半導体装置1は、例えば、半導体チップ10とパッケージ基板20とを、はんだを含む複数の電極130により接続したフリップチップ型半導体装置である。半導体チップ10とパッケージ基板20との間には、アンダーフィル樹脂40が設けられている。
(式1において、Lは、第3開口163の長さ(mm)、aは、パッケージ基板20の等価熱膨張係数(ppm/℃)、Dは、第3開口163の中心のパッケージ基板20の中心からの距離(mm)、Tは、はんだの融点(℃)、dは、はんだを含む電極130の径をそれぞれ表す。)
図9は、本開示の第2の実施の形態に係る半導体装置2の一部を拡大して表したものであり、具体的には、チップ配設領域20A内の三本の第1配線151および三本の第2配線152の平面構成を表している。なお、図9の上面図では、わかりやすくするために半導体チップ10およびアンダーフィル樹脂40を省略している。
図10は、本開示の第3の実施の形態に係る半導体装置3の一部を拡大して表したものであり、具体的には、チップ配設領域20A内の三本の第1配線151および三本の第2配線152の平面構成を表している。なお、図10の上面図では、わかりやすくするために半導体チップ10およびアンダーフィル樹脂40を省略している。
図15は、本開示の第4の実施の形態に係る半導体装置の一部を拡大して表したものであり、具体的には、チップ配設領域20A内の隣接する四つの第1開口161および第2開口162の平面構成を模式的に表している。
(第3開口の平面形状を楕円形とする例)
図16は、変形例1−1に係る半導体装置の一部を拡大して表したものであり、具体的には、隣接する二本の第3配線153(153A,153B)のチップ配設領域20Aの外周部近傍における平面構成を表している。なお、図16の上面図では、わかりやすくするために半導体チップ10およびアンダーフィル樹脂40を省略しているが、半導体チップ10は、点線で表した半導体チップ10のチップ外形線10Aよりも左側の領域に配置されている。
(第3開口内において、第3配線に拡幅部を設ける例)
図18は、変形例1−2に係る半導体装置の一部を拡大して表したものであり、具体的には、隣接する二本の第3配線153(153A,153B)のチップ配設領域20Aの外周部近傍における平面構成を表している。なお、図18の上面図では、わかりやすくするために半導体チップ10、第3電極133およびアンダーフィル樹脂40を省略しているが、半導体チップ10は、点線で表した半導体チップ10のチップ外形線10Aよりも左側の領域に配置されている。また、図18では、第3電極133の実装位置を点線で表している。
(第3開口内において、第3配線に途切れ部を設ける例)
図19は、変形例1−3に係る半導体装置の一部を拡大して表したものであり、具体的には、隣接する二本の第3配線153(153A,153B)のチップ配設領域20Aの外周部近傍における平面構成を表している。なお、図19の上面図では、わかりやすくするために半導体チップ10、第3電極133およびアンダーフィル樹脂40を省略しているが、半導体チップ10は、点線で表した半導体チップ10のチップ外形線10Aよりも左側の領域に配置されている。また、図19では、第3電極133の実装位置を点線で表している。
(二つの第3開口の角部に斜め切欠き部を設け、その二つの第3開口を、斜め切欠き部どうしを向かい合わせて隣接配置する例)
図21は、変形例1−4に係る半導体装置の一部を拡大して表す上面図であり、具体的には、隣接する二本の第3配線153(153A,153B)のチップ配設領域20Aの外周部近傍における平面構成を表している。なお、図21の上面図では、わかりやすくするために半導体チップ10およびアンダーフィル樹脂40を省略しているが、半導体チップ10は、点線で表した半導体チップ10のチップ外形線10Aよりも左側の領域に配置されている。
(二つの第3開口の辺に斜め切欠き部を設け、その二つの第3開口を、斜め切欠き部どうしを向かい合わせて隣接配置する例)
図22は、変形例1−5に係る半導体装置の一部を拡大して表す上面図であり、具体的には、隣接する二本の第3配線153(153A,153B)のチップ配設領域20Aの外周部近傍における平面構成を表している。なお、図22の上面図では、わかりやすくするために半導体チップ10、第3電極133およびアンダーフィル樹脂40を省略しているが、半導体チップ10は、点線で表した半導体チップ10のチップ外形線10Aよりも左側の領域に配置されている。
(半導体装置;開口内におけるソルダレジスト層の厚みを、基板本体の表面のうち開口以外の領域におけるソルダレジスト層の厚みよりも小さくする例)
図23は、本開示の第5の実施の形態に係る半導体装置の一部を拡大して表したものであり、具体的には、隣接する二本の第3配線153(153A,153B)のチップ配設領域20Aの外周部近傍における断面構成を表している。
(半導体装置;MCM(Multi Chip Module )の例)
図24は、本開示の第6の実施の形態に係る半導体装置の全体構成を概略的に表したものである。図25は、この半導体装置のXXV−XXV線における断面構成を概略的に表したものである。上記第1の実施の形態では半導体装置1が半導体チップ10単体のLSIパッケージである場合について説明したのに対し、本実施の形態の半導体装置6は、例えば、MCM(Multi Chip Module )への適用例である。このことを除いては、本実施の形態の半導体装置6は、上記第1の実施の形態の半導体装置1と同様の構成、作用および効果を有している。よって、対応する構成要素には同一の符号を付して説明する。
(半導体装置;モールド樹脂で封止する例)
図26は、本開示の第7の実施の形態に係る半導体装置の全体構成を概略的に表したものである。この半導体装置7は、上記第1の実施の形態で説明した半導体装置1を、モールド樹脂80で封止した構成を有している。半導体装置1をモールド樹脂80で封止することによって、半導体チップ10の裏面およびパッケージ基板20の基板本体21の表面21Aが保護される。従って、ハンドリングが容易になり、外部からの衝撃に強いフリップチップ型半導体装置7を実現することが可能となる。
また、図27に示したように、モールド樹脂80の内部に、半導体チップ10とは異なる半導体チップ90が積層されている半導体装置7Aにおいても、上記の効果を発揮することが可能である。半導体チップ90は、例えばチップ本体91を有している。チップ本体91は、ワイヤ92によりパッケージ基板20に接続されている。
更に、図28に示したように、第1の実施の形態で説明した半導体装置1の半導体チップ10の上に、更に他の半導体パッケージ100が積層されているPoP(Package on Package)型の半導体装置7Bでも、上記と同様の効果を得ることが可能である。
(半導体装置の製造方法;一括リフローの例)
図29ないし図36、および図37ないし図40は、本開示の第8の実施の形態に係る半導体装置の製造方法を工程順に表したものである。
(半導体装置の製造方法;ローカルリフローの例)
次に、同じく図37、図39および図40を参照して、パッケージ基板20と半導体チップ10との、サーマルコンプレッション(Thermal Compression )と呼ばれるローカルリフロー工法を用いた接続方法について説明する。
なお、上記第8の実施の形態では、フラックスによる仮付け後にリフロ炉で加熱する方法を説明したが、第9の実施の形態で説明したような熱圧着工法によって仮付けを行った後に、リフロ炉で加熱を行い、より合金層の成長を進めて確実に接合する手法を用いてもよい。
また、上記第9の実施の形態では、接合プロセス中に半導体チップ10を保持するツール側の温度を昇温/冷却させるプロセスを説明した。しかしながら、ツール側の温度をはんだ融点以上に固定した状態で熱圧着する工法を用いてもよい。この場合には、はんだ層32と配線150との接触によって荷重を検出することが難しいので、柱状金属層31がソルダレジスト層24と接触する際の荷重を検出する、または柱状金属層31が配線150と接触するときの荷重を検出し、その後所望のギャップGを形成するように、半導体チップ10を保持するツールを引き上げる。ただし、はんだ層32が溶融した状態のままで保持されるため、表面の酸化膜が成長する。よって窒素雰囲気下で接合を行う等の対策を行うことによって、より良い接合状態を得ることが可能となる。
(半導体装置の製造方法;予めパッケージ基板の上にアンダーフィル樹脂を供給する例)
図41ないし図43は、本開示の第12の実施の形態に係る半導体装置の製造方法を工程順に表したものである。本実施の形態の製造方法は、先にアンダーフィル樹脂40をパッケージ基板20上に供給するようにしたことにおいて上記第8の実施の形態に係る半導体装置の製造方法と異なるものである。
以上、各実施の形態およびその効果について説明した。以上の効果は、第1または第5の実施の形態のように単体の半導体チップ10を実装したフリップチップ型半導体装置に限られない。例えば、第6の実施の形態のように複数のメモリパッケージと半導体チップ10とが一枚のパッケージ基板20に実装された、MCM(Multi Chip Module )構造でも同じ効果を発揮することが可能である。
(1)
半導体チップと、前記半導体チップが配設されるパッケージ基板とを備え、
前記半導体チップは、チップ本体と、前記チップ本体の素子形成面に設けられたはんだを含む複数の電極とを有し、
前記パッケージ基板は、基板本体と、前記基板本体の表面に設けられた複数の配線およびソルダレジスト層とを有し、
前記ソルダレジスト層は、前記基板本体の表面および前記複数の配線の上に連続層として設けられると共に、前記複数の配線の各々の上に少なくとも一つの開口を有し、
前記少なくとも一つの開口は、前記少なくとも一つの開口内の前記配線の上面および側面の高さ方向の一部または全部を露出させ、
前記はんだを含む複数の電極の各々は、前記少なくとも一つの開口内の前記配線の露出した部分を被覆し、
前記はんだを含む複数の電極は、第1の電位を供給する複数の第1電極と、前記第1の電位とは異なる第2の電位を供給する複数の第2電極とを含み、
前記複数の第1電極および前記複数の第2電極は、前記チップ本体の中央部に、行方向および列方向の両方に交互に配置され、
前記複数の配線は、前記複数の第1電極を相互に接続する複数の第1配線と、前記複数の第2電極を相互に接続する複数の第2配線とを含む
半導体装置。
(2)
前記複数の第1配線は、前記複数の第1電極を前記列方向に対して斜め方向に相互に接続し、前記複数の第2配線は、前記複数の第2電極を前記斜め方向に相互に接続する
前記(1)記載の半導体装置。
(3)
前記少なくとも一つの開口は、前記複数の第1配線の各々の上に設けられた複数の第1開口と、前記複数の第2配線の各々の上に設けられた複数の第2開口とを含み、
前記複数の第1配線は、前記複数の第1開口の各々に対して前記列方向に交差する縦線部と、前記縦線部どうしを前記斜め方向につなぐ斜線部とを有し、
前記複数の第2配線は、前記複数の第2開口の各々に対して前記列方向に交差する縦線部と、前記縦線部どうしを前記斜め方向につなぐ斜線部とを有する
前記(2)記載の半導体装置。
(4)
前記複数の第1配線および前記複数の第2配線は、直線である
前記(2)記載の半導体装置。
(5)
前記少なくとも一つの開口は、前記複数の第1配線の各々の上に設けられた複数の第1開口と、前記複数の第2配線の各々の上に設けられた複数の第2開口とを含み、
前記複数の第1開口および前記複数の第2開口は、前記列方向に長い長方形の平面形状を有し、
前記複数の第1配線の各々は、前記複数の第1開口の各々の対角線方向に対向する二つの角部を斜めに横切って配置され、
前記複数の第2配線の各々は、前記複数の第2開口の各々の対角線方向に対向する二つの角部を斜めに横切って配置されている
前記(4)記載の半導体装置。
(6)
前記複数の第1開口および前記複数の第2開口は、前記行方向および前記列方向の両方に等ピッチ配置され、
前記複数の第1配線および前記複数の第2配線は、前記列方向に対して斜め45度方向の直線である
前記(5)記載の半導体装置。
(7)
前記はんだを含む複数の電極は、前記半導体チップの外周部に設けられた複数の第3電極を含み、
前記パッケージ基板は、前記基板本体の中央部にチップ配設領域を有し、
前記複数の配線は、複数の第3配線を含み、前記複数の第3配線は、前記チップ配設領域の外周部から前記基板本体の外側または内側に向かって伸びていると共に前記チップ配設領域の各辺において互いに平行に配置されている
前記(1)ないし(6)のいずれかに記載の半導体装置。
(8)
前記少なくとも一つの開口は、前記複数の第3配線の各々の上に設けられた第3開口を含み、
前記第3開口は、前記第3開口内の前記第3配線の長手方向に長い平面形状を有し、前記第3開口の長さは、前記パッケージ基板の熱膨張係数に応じて調整されている
前記(7)記載の半導体装置。
(9)
前記はんだを含む複数の電極の各々は、前記チップ本体の側から、柱状金属層と、はんだ層とを順に有し、
前記柱状金属層は、前記はんだ層を構成するはんだよりも高い融点をもつ金属により構成されている
前記(1)ないし(8)のいずれかに記載の半導体装置。
(10)
前記柱状金属層の高さは、前記はんだ層の高さよりも大きい
前記(9)記載の半導体装置。
(11)
前記はんだ層の体積は、前記開口の容積よりも大きい
前記(9)または(10)記載の半導体装置。
(12)
前記第3開口の長さは、以下の式1を満たす
L>(a−3.5)*D*(T−25)*10-6+d ・・・式1
(式1において、Lは、前記第3開口の長さ(mm)、aは、前記パッケージ基板の等価熱膨張係数(ppm/℃)、Dは、前記第3開口の中心の前記パッケージ基板の中心からの距離(mm)、Tは、前記はんだの融点(℃)、dは、前記複数の第3電極の各々の径をそれぞれ表す。)
前記(8)ないし(11)のいずれかに記載の半導体装置。
(13)
前記複数の配線の各々は、
主として銅(Cu)により構成された金属配線層と、
前記金属配線層の表面のうち前記開口内に露出した領域を覆う表面被膜と
を有する前記(1)ないし(12)のいずれかに記載の半導体装置。
(14)
前記表面被膜は、Ni−Auめっき層またはNi−Pd−Auめっき層により構成されている
前記(13)記載の半導体装置。
(15)
前記柱状金属層は、銅(Cu)または銅(Cu)とニッケル(Ni)との積層膜により構成され、
前記はんだ層は、スズ(Sn)またはSn−Agにより構成されている
前記(9)ないし(11)のいずれかに記載の半導体装置。
(16)
前記柱状金属層は、銅(Cu)または銅(Cu)とニッケル(Ni)との積層膜により構成され、
前記はんだ層は、インジウム(In)またはIn−Agにより構成されている
前記(9)ないし(11)のいずれかに記載の半導体装置。
(17)
チップ本体の素子形成面にはんだを含む複数の電極を有する半導体チップを、基板本体の表面に複数の配線およびソルダレジスト層を有するパッケージ基板に対して位置決めすることと、
前記半導体チップを前記パッケージ基板に対して仮付けすることと、
リフロ加熱により前記はんだを含む複数の電極と前記複数の配線とを接続することと、
前記半導体チップと前記パッケージ基板との間にアンダーフィル樹脂を注入したのち前記アンダーフィル樹脂を硬化させることと
を含み、
前記ソルダレジスト層を、前記基板本体の表面および前記複数の配線の上に連続層として設けると共に、前記複数の配線の各々の上に少なくとも一つの開口を設け、
前記少なくとも一つの開口により、前記少なくとも一つの開口内の前記配線の上面および側面の高さ方向の一部または全部を露出させ、
前記はんだを含む複数の電極の各々により、前記少なくとも一つの開口内の前記配線の露出した部分を被覆させ、
前記はんだを含む複数の電極を、第1の電位を供給する複数の第1電極と、前記第1の電位とは異なる第2の電位を供給する複数の第2電極とを含んで形成し、
前記複数の第1電極および前記複数の第2電極を、前記チップ本体の中央部に、行方向および列方向の両方に交互に配置し、
前記複数の配線を、前記複数の第1電極を相互に接続する複数の第1配線と、前記複数の第2電極を相互に接続する複数の第2配線とを含んで形成する
半導体装置の製造方法。
(18)
チップ本体の素子形成面にはんだを含む複数の電極を有する半導体チップを、基板本体の表面に複数の配線およびソルダレジスト層を有するパッケージ基板に対して位置決めすることと、
前記半導体チップを前記パッケージ基板に対して前記はんだの融点以上に加熱および圧着することにより前記はんだを含む複数の電極と前記複数の配線とを接続することと、
前記半導体チップと前記パッケージ基板との間にアンダーフィル樹脂を注入したのち前記アンダーフィル樹脂を硬化させることと
を含み、
前記ソルダレジスト層を、前記基板本体の表面および前記複数の配線の上に連続層として設けると共に、前記複数の配線の各々の上に少なくとも一つの開口を設け、
前記少なくとも一つの開口により、前記少なくとも一つの開口内の前記配線の上面および側面の高さ方向の一部または全部を露出させ、
前記はんだを含む複数の電極の各々により、前記少なくとも一つの開口内の前記配線の露出した部分を被覆させ、
前記はんだを含む複数の電極を、第1の電位を供給する複数の第1電極と、前記第1の電位とは異なる第2の電位を供給する複数の第2電極とを含んで形成し、
前記複数の第1電極および前記複数の第2電極を、前記チップ本体の中央部に、行方向および列方向の両方に交互に配置し、
前記複数の配線を、前記複数の第1電極を相互に接続する複数の第1配線と、前記複数の第2電極を相互に接続する複数の第2配線とを含んで形成する
半導体装置の製造方法。
(19)
基板本体の表面に複数の配線およびソルダレジスト層を有するパッケージ基板の上に、アンダーフィル樹脂を供給することと、
チップ本体の素子形成面にはんだを含む複数の電極を有する半導体チップを、前記パッケージ基板に対して位置決めすることと、
前記半導体チップを前記パッケージ基板に対して前記はんだの融点以上に加熱および圧着することにより前記はんだを含む複数の電極と前記複数の配線とを接続すると共に、前記アンダーフィル樹脂を硬化させることと
を含み、
前記ソルダレジスト層を、前記基板本体の表面および前記複数の配線の上に連続層として設けると共に、前記複数の配線の各々の上に少なくとも一つの開口を設け、
前記少なくとも一つの開口により、前記少なくとも一つの開口内の前記配線の上面および側面の高さ方向の一部または全部を露出させ、
前記はんだを含む複数の電極の各々により、前記少なくとも一つの開口内の前記配線の露出した部分を被覆させ、
前記はんだを含む複数の電極を、第1の電位を供給する複数の第1電極と、前記第1の電位とは異なる第2の電位を供給する複数の第2電極とを含んで形成し、
前記複数の第1電極および前記複数の第2電極を、前記チップ本体の中央部に、行方向および列方向の両方に交互に配置し、
前記複数の配線を、前記複数の第1電極を相互に接続する複数の第1配線と、前記複数の第2電極を相互に接続する複数の第2配線とを含んで形成する
半導体装置の製造方法。
Claims (19)
- 半導体チップと、前記半導体チップが配設されるパッケージ基板とを備え、
前記半導体チップは、チップ本体と、前記チップ本体の素子形成面に設けられたはんだを含む複数の電極とを有し、
前記パッケージ基板は、基板本体と、前記基板本体の表面に設けられた複数の配線およびソルダレジスト層とを有し、
前記ソルダレジスト層は、前記基板本体の表面および前記複数の配線の上に連続層として設けられると共に、前記複数の配線の各々の上に少なくとも一つの開口を有し、
前記少なくとも一つの開口は、前記少なくとも一つの開口内の前記配線の上面および側面の高さ方向の一部または全部を露出させ、
前記はんだを含む複数の電極の各々は、前記少なくとも一つの開口内の前記配線の露出した部分を被覆し、
前記はんだを含む複数の電極は、第1の電位を供給する複数の第1電極と、前記第1の電位とは異なる第2の電位を供給する複数の第2電極とを含み、
前記複数の第1電極および前記複数の第2電極は、前記チップ本体の中央部に、行方向および列方向の両方に交互に配置され、
前記複数の配線は、前記複数の第1電極を相互に接続する複数の第1配線と、前記複数の第2電極を相互に接続する複数の第2配線とを含む
半導体装置。 - 前記複数の第1配線は、前記複数の第1電極を前記列方向に対して斜め方向に相互に接続し、前記複数の第2配線は、前記複数の第2電極を前記斜め方向に相互に接続する
請求項1記載の半導体装置。 - 前記少なくとも一つの開口は、前記複数の第1配線の各々の上に設けられた複数の第1開口と、前記複数の第2配線の各々の上に設けられた複数の第2開口とを含み、
前記複数の第1配線は、前記複数の第1開口の各々に対して前記列方向に交差する縦線部と、前記縦線部どうしを前記斜め方向につなぐ斜線部とを有し、
前記複数の第2配線は、前記複数の第2開口の各々に対して前記列方向に交差する縦線部と、前記縦線部どうしを前記斜め方向につなぐ斜線部とを有する
請求項2記載の半導体装置。 - 前記複数の第1配線および前記複数の第2配線は、直線である
請求項2記載の半導体装置。 - 前記少なくとも一つの開口は、前記複数の第1配線の各々の上に設けられた複数の第1開口と、前記複数の第2配線の各々の上に設けられた複数の第2開口とを含み、
前記複数の第1開口および前記複数の第2開口は、前記列方向に長い長方形の平面形状を有し、
前記複数の第1配線の各々は、前記複数の第1開口の各々の対角線方向に対向する二つの角部を斜めに横切って配置され、
前記複数の第2配線の各々は、前記複数の第2開口の各々の対角線方向に対向する二つの角部を斜めに横切って配置されている
請求項4記載の半導体装置。 - 前記複数の第1開口および前記複数の第2開口は、前記行方向および前記列方向の両方に等ピッチ配置され、
前記複数の第1配線および前記複数の第2配線は、前記列方向に対して斜め45度方向の直線である
請求項5記載の半導体装置。 - 前記はんだを含む複数の電極は、前記半導体チップの外周部に設けられた複数の第3電極を含み、
前記パッケージ基板は、前記基板本体の中央部にチップ配設領域を有し、
前記複数の配線は、複数の第3配線を含み、前記複数の第3配線は、前記チップ配設領域の外周部から前記基板本体の外側または内側に向かって伸びていると共に前記チップ配設領域の各辺において互いに平行に配置されている
請求項1記載の半導体装置。 - 前記少なくとも一つの開口は、前記複数の第3配線の各々の上に設けられた第3開口を含み、
前記第3開口は、前記第3開口内の前記第3配線の長手方向に長い平面形状を有し、前記第3開口の長さは、前記パッケージ基板の熱膨張係数に応じて調整されている
請求項7記載の半導体装置。 - 前記はんだを含む複数の電極の各々は、前記チップ本体の側から、柱状金属層と、はんだ層とを順に有し、
前記柱状金属層は、前記はんだ層を構成するはんだよりも高い融点をもつ金属により構成されている
請求項1記載の半導体装置。 - 前記柱状金属層の高さは、前記はんだ層の高さよりも大きい
請求項9記載の半導体装置。 - 前記はんだ層の体積は、前記開口の容積よりも大きい
請求項9記載の半導体装置。 - 前記第3開口の長さは、以下の式1を満たす
L>(a−3.5)*D*(T−25)*10-6+d ・・・式1
(式1において、Lは、前記第3開口の長さ(mm)、aは、前記パッケージ基板の等価熱膨張係数(ppm/℃)、Dは、前記第3開口の中心の前記パッケージ基板の中心からの距離(mm)、Tは、前記はんだの融点(℃)、dは、前記複数の第3電極の各々の径をそれぞれ表す。)
請求項8記載の半導体装置。 - 前記複数の配線の各々は、
主として銅(Cu)により構成された金属配線層と、
前記金属配線層の表面のうち前記開口内に露出した領域を覆う表面被膜と
を有する請求項1記載の半導体装置。 - 前記表面被膜は、Ni−Auめっき層またはNi−Pd−Auめっき層により構成されている
請求項13記載の半導体装置。 - 前記柱状金属層は、銅(Cu)または銅(Cu)とニッケル(Ni)との積層膜により構成され、
前記はんだ層は、スズ(Sn)またはSn−Agにより構成されている
請求項9記載の半導体装置。 - 前記柱状金属層は、銅(Cu)または銅(Cu)とニッケル(Ni)との積層膜により構成され、
前記はんだ層は、インジウム(In)またはIn−Agにより構成されている
請求項9記載の半導体装置。 - チップ本体の素子形成面にはんだを含む複数の電極を有する半導体チップを、基板本体の表面に複数の配線およびソルダレジスト層を有するパッケージ基板に対して位置決めすることと、
前記半導体チップを前記パッケージ基板に対して仮付けすることと、
リフロ加熱により前記はんだを含む複数の電極と前記複数の配線とを接続することと、
前記半導体チップと前記パッケージ基板との間にアンダーフィル樹脂を注入したのち前記アンダーフィル樹脂を硬化させることと
を含み、
前記ソルダレジスト層を、前記基板本体の表面および前記複数の配線の上に連続層として設けると共に、前記複数の配線の各々の上に少なくとも一つの開口を設け、
前記少なくとも一つの開口により、前記少なくとも一つの開口内の前記配線の上面および側面の高さ方向の一部または全部を露出させ、
前記はんだを含む複数の電極の各々により、前記少なくとも一つの開口内の前記配線の露出した部分を被覆させ、
前記はんだを含む複数の電極を、第1の電位を供給する複数の第1電極と、前記第1の電位とは異なる第2の電位を供給する複数の第2電極とを含んで形成し、
前記複数の第1電極および前記複数の第2電極を、前記チップ本体の中央部に、行方向および列方向の両方に交互に配置し、
前記複数の配線を、前記複数の第1電極を相互に接続する複数の第1配線と、前記複数の第2電極を相互に接続する複数の第2配線とを含んで形成する
半導体装置の製造方法。 - チップ本体の素子形成面にはんだを含む複数の電極を有する半導体チップを、基板本体の表面に複数の配線およびソルダレジスト層を有するパッケージ基板に対して位置決めすることと、
前記半導体チップを前記パッケージ基板に対して前記はんだの融点以上に加熱および圧着することにより前記はんだを含む複数の電極と前記複数の配線とを接続することと、
前記半導体チップと前記パッケージ基板との間にアンダーフィル樹脂を注入したのち前記アンダーフィル樹脂を硬化させることと
を含み、
前記ソルダレジスト層を、前記基板本体の表面および前記複数の配線の上に連続層として設けると共に、前記複数の配線の各々の上に少なくとも一つの開口を設け、
前記少なくとも一つの開口により、前記少なくとも一つの開口内の前記配線の上面および側面の高さ方向の一部または全部を露出させ、
前記はんだを含む複数の電極の各々により、前記少なくとも一つの開口内の前記配線の露出した部分を被覆させ、
前記はんだを含む複数の電極を、第1の電位を供給する複数の第1電極と、前記第1の電位とは異なる第2の電位を供給する複数の第2電極とを含んで形成し、
前記複数の第1電極および前記複数の第2電極を、前記チップ本体の中央部に、行方向および列方向の両方に交互に配置し、
前記複数の配線を、前記複数の第1電極を相互に接続する複数の第1配線と、前記複数の第2電極を相互に接続する複数の第2配線とを含んで形成する
半導体装置の製造方法。 - 基板本体の表面に複数の配線およびソルダレジスト層を有するパッケージ基板の上に、アンダーフィル樹脂を供給することと、
チップ本体の素子形成面にはんだを含む複数の電極を有する半導体チップを、前記パッケージ基板に対して位置決めすることと、
前記半導体チップを前記パッケージ基板に対して前記はんだの融点以上に加熱および圧着することにより前記はんだを含む複数の電極と前記複数の配線とを接続すると共に、前記アンダーフィル樹脂を硬化させることと
を含み、
前記ソルダレジスト層を、前記基板本体の表面および前記複数の配線の上に連続層として設けると共に、前記複数の配線の各々の上に少なくとも一つの開口を設け、
前記少なくとも一つの開口により、前記少なくとも一つの開口内の前記配線の上面および側面の高さ方向の一部または全部を露出させ、
前記はんだを含む複数の電極の各々により、前記少なくとも一つの開口内の前記配線の露出した部分を被覆させ、
前記はんだを含む複数の電極を、第1の電位を供給する複数の第1電極と、前記第1の電位とは異なる第2の電位を供給する複数の第2電極とを含んで形成し、
前記複数の第1電極および前記複数の第2電極を、前記チップ本体の中央部に、行方向および列方向の両方に交互に配置し、
前記複数の配線を、前記複数の第1電極を相互に接続する複数の第1配線と、前記複数の第2電極を相互に接続する複数の第2配線とを含んで形成する
半導体装置の製造方法。
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