JP6457389B2 - ビスマスでドープされた半絶縁ｉｉｉ族窒化物ウエハおよびその生産方法 - Google Patents
ビスマスでドープされた半絶縁ｉｉｉ族窒化物ウエハおよびその生産方法 Download PDFInfo
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- JP6457389B2 JP6457389B2 JP2015528453A JP2015528453A JP6457389B2 JP 6457389 B2 JP6457389 B2 JP 6457389B2 JP 2015528453 A JP2015528453 A JP 2015528453A JP 2015528453 A JP2015528453 A JP 2015528453A JP 6457389 B2 JP6457389 B2 JP 6457389B2
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- wafer
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- bismuth
- insulating
- doped
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- 238000004519 manufacturing process Methods 0.000 title description 4
- 239000013078 crystal Substances 0.000 claims description 60
- 238000000034 method Methods 0.000 claims description 53
- 150000004767 nitrides Chemical class 0.000 claims description 33
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 28
- 229910052797 bismuth Inorganic materials 0.000 claims description 24
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 20
- 229910021529 ammonia Inorganic materials 0.000 claims description 14
- 239000002019 doping agent Substances 0.000 claims description 11
- 230000007547 defect Effects 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 239000011734 sodium Substances 0.000 claims description 3
- 229910052783 alkali metal Inorganic materials 0.000 claims description 2
- 150000001340 alkali metals Chemical class 0.000 claims description 2
- 230000005693 optoelectronics Effects 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 48
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 36
- 229910002601 GaN Inorganic materials 0.000 description 33
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000007716 flux method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- MYWUZJCMWCOHBA-VIFPVBQESA-N methamphetamine Chemical compound CN[C@@H](C)CC1=CC=CC=C1 MYWUZJCMWCOHBA-VIFPVBQESA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
- C30B7/105—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes using ammonia as solvent, i.e. ammonothermal processes
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261693122P | 2012-08-24 | 2012-08-24 | |
| US61/693,122 | 2012-08-24 | ||
| PCT/US2013/028416 WO2014031152A1 (en) | 2012-08-24 | 2013-02-28 | A bismuth-doped semi-insulating group iii nitride wafer and its production method |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018154605A Division JP2019011245A (ja) | 2012-08-24 | 2018-08-21 | ビスマスでドープされた半絶縁ｉｉｉ族窒化物ウエハおよびその生産方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015530967A JP2015530967A (ja) | 2015-10-29 |
| JP2015530967A5 JP2015530967A5 (enExample) | 2017-12-14 |
| JP6457389B2 true JP6457389B2 (ja) | 2019-01-23 |
Family
ID=47989353
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015528453A Active JP6457389B2 (ja) | 2012-08-24 | 2013-02-28 | ビスマスでドープされた半絶縁ｉｉｉ族窒化物ウエハおよびその生産方法 |
| JP2018154605A Withdrawn JP2019011245A (ja) | 2012-08-24 | 2018-08-21 | ビスマスでドープされた半絶縁ｉｉｉ族窒化物ウエハおよびその生産方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018154605A Withdrawn JP2019011245A (ja) | 2012-08-24 | 2018-08-21 | ビスマスでドープされた半絶縁ｉｉｉ族窒化物ウエハおよびその生産方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US9255342B2 (enExample) |
| EP (1) | EP2888390A1 (enExample) |
| JP (2) | JP6457389B2 (enExample) |
| KR (1) | KR102062901B1 (enExample) |
| CN (1) | CN104781456B (enExample) |
| TW (1) | TWI602222B (enExample) |
| WO (1) | WO2014031152A1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102062901B1 (ko) | 2012-08-24 | 2020-01-06 | 서울반도체 주식회사 | 비스무트 도핑된 반절연성 3족 질화물 웨이퍼 및 그의 제조 방법 |
| US10355115B2 (en) | 2016-12-23 | 2019-07-16 | Sixpoint Materials, Inc. | Electronic device using group III nitride semiconductor and its fabrication method |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4929770A (enExample) * | 1972-07-17 | 1974-03-16 | ||
| JP3680337B2 (ja) * | 1995-02-14 | 2005-08-10 | 昭和電工株式会社 | 発光ダイオード |
| US6139629A (en) | 1997-04-03 | 2000-10-31 | The Regents Of The University Of California | Group III-nitride thin films grown using MBE and bismuth |
| US7560296B2 (en) * | 2000-07-07 | 2009-07-14 | Lumilog | Process for producing an epitalixal layer of galium nitride |
| US6562124B1 (en) * | 1999-06-02 | 2003-05-13 | Technologies And Devices International, Inc. | Method of manufacturing GaN ingots |
| US6596079B1 (en) * | 2000-03-13 | 2003-07-22 | Advanced Technology Materials, Inc. | III-V nitride substrate boule and method of making and using the same |
| HUP0401866A3 (en) | 2001-06-06 | 2005-12-28 | Nichia Corp | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride |
| JP3690326B2 (ja) * | 2001-10-12 | 2005-08-31 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体の製造方法 |
| AU2002347692C1 (en) | 2001-10-26 | 2008-03-06 | Ammono Sp. Zo.O. | Bulk monocrystalline gallium nitride |
| JP4513264B2 (ja) * | 2002-02-22 | 2010-07-28 | 三菱化学株式会社 | 窒化物単結晶の製造方法 |
| US7098487B2 (en) | 2002-12-27 | 2006-08-29 | General Electric Company | Gallium nitride crystal and method of making same |
| US7170095B2 (en) | 2003-07-11 | 2007-01-30 | Cree Inc. | Semi-insulating GaN and method of making the same |
| PL368483A1 (en) * | 2004-06-11 | 2005-12-12 | Ammono Sp.Z O.O. | Monocrystals of nitride containing gallium and its application |
| WO2005121415A1 (en) * | 2004-06-11 | 2005-12-22 | Ammono Sp. Z O.O. | Bulk mono-crystalline gallium-containing nitride and its application |
| WO2006010075A1 (en) | 2004-07-09 | 2006-01-26 | Cornell Research Foundation, Inc. | Method of making group iii nitrides |
| US7316746B2 (en) * | 2005-03-18 | 2008-01-08 | General Electric Company | Crystals for a semiconductor radiation detector and method for making the crystals |
| JP5010597B2 (ja) | 2005-07-08 | 2012-08-29 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 耐圧釜を用いた超臨界アンモニア中でのｉｉｉ族窒化物結晶の成長方法 |
| JP4631071B2 (ja) * | 2005-10-26 | 2011-02-16 | 株式会社リコー | 窒化ガリウム結晶の結晶成長装置および窒化ガリウム結晶の製造方法 |
| US8435879B2 (en) * | 2005-12-12 | 2013-05-07 | Kyma Technologies, Inc. | Method for making group III nitride articles |
| WO2007117689A2 (en) | 2006-04-07 | 2007-10-18 | The Regents Of The University Of California | Growing large surface area gallium nitride crystals |
| JP2009536605A (ja) | 2006-05-08 | 2009-10-15 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | アルミニウムを含むｉｉｉ族窒化物半導体化合物の成長方法及び材料。 |
| JP4320455B2 (ja) * | 2006-09-20 | 2009-08-26 | 株式会社 東北テクノアーチ | 半導体デバイスの製造方法 |
| JP4462330B2 (ja) * | 2007-11-02 | 2010-05-12 | 住友電気工業株式会社 | Ｉｉｉ族窒化物電子デバイス |
| JP5631746B2 (ja) | 2008-06-04 | 2014-11-26 | シックスポイント マテリアルズ， インコーポレイテッド | Ｉｉｉ族窒化物結晶を成長させるための高圧ベッセル、ならびに高圧ベッセルおよびｉｉｉ族窒化物結晶を用いてｉｉｉ族窒化物結晶を成長させる方法 |
| EP2286007B1 (en) * | 2008-06-12 | 2018-04-04 | SixPoint Materials, Inc. | Method for testing gallium nitride wafers and method for producing gallium nitride wafers |
| EP2267197A1 (en) * | 2009-06-25 | 2010-12-29 | AMMONO Sp.z o.o. | Method of obtaining bulk mono-crystalline gallium-containing nitride, bulk mono-crystalline gallium-containing nitride, substrates manufactured thereof and devices manufactured on such substrates |
| US20110217505A1 (en) * | 2010-02-05 | 2011-09-08 | Teleolux Inc. | Low-Defect nitride boules and associated methods |
| KR102062901B1 (ko) | 2012-08-24 | 2020-01-06 | 서울반도체 주식회사 | 비스무트 도핑된 반절연성 3족 질화물 웨이퍼 및 그의 제조 방법 |
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2013
- 2013-02-28 KR KR1020157007313A patent/KR102062901B1/ko active Active
- 2013-02-28 JP JP2015528453A patent/JP6457389B2/ja active Active
- 2013-02-28 CN CN201380048113.2A patent/CN104781456B/zh active Active
- 2013-02-28 WO PCT/US2013/028416 patent/WO2014031152A1/en not_active Ceased
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- 2013-02-28 US US13/781,543 patent/US9255342B2/en active Active
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Also Published As
| Publication number | Publication date |
|---|---|
| CN104781456B (zh) | 2018-01-12 |
| KR20150092083A (ko) | 2015-08-12 |
| US9435051B2 (en) | 2016-09-06 |
| KR102062901B1 (ko) | 2020-01-06 |
| CN104781456A (zh) | 2015-07-15 |
| US20160130720A1 (en) | 2016-05-12 |
| TW201413792A (zh) | 2014-04-01 |
| US9255342B2 (en) | 2016-02-09 |
| EP2888390A1 (en) | 2015-07-01 |
| TWI602222B (zh) | 2017-10-11 |
| US20140054589A1 (en) | 2014-02-27 |
| JP2019011245A (ja) | 2019-01-24 |
| JP2015530967A (ja) | 2015-10-29 |
| WO2014031152A1 (en) | 2014-02-27 |
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