JP6456748B2 - フォトマスクの製造方法、フォトマスク及びフラットパネルディスプレイの製造方法 - Google Patents

フォトマスクの製造方法、フォトマスク及びフラットパネルディスプレイの製造方法 Download PDF

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Publication number
JP6456748B2
JP6456748B2 JP2015067785A JP2015067785A JP6456748B2 JP 6456748 B2 JP6456748 B2 JP 6456748B2 JP 2015067785 A JP2015067785 A JP 2015067785A JP 2015067785 A JP2015067785 A JP 2015067785A JP 6456748 B2 JP6456748 B2 JP 6456748B2
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Japan
Prior art keywords
film
photomask
layer film
etching
lower layer
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JP2015067785A
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English (en)
Japanese (ja)
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JP2016188881A (ja
Inventor
山口　昇
昇 山口
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Hoya Corp
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Hoya Corp
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Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to JP2015067785A priority Critical patent/JP6456748B2/ja
Priority to TW105101916A priority patent/TWI597560B/zh
Priority to CN201610146972.0A priority patent/CN106019807B/zh
Priority to KR1020160034168A priority patent/KR101821037B1/ko
Publication of JP2016188881A publication Critical patent/JP2016188881A/ja
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Publication of JP6456748B2 publication Critical patent/JP6456748B2/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2015067785A 2015-03-28 2015-03-28 フォトマスクの製造方法、フォトマスク及びフラットパネルディスプレイの製造方法 Active JP6456748B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015067785A JP6456748B2 (ja) 2015-03-28 2015-03-28 フォトマスクの製造方法、フォトマスク及びフラットパネルディスプレイの製造方法
TW105101916A TWI597560B (zh) 2015-03-28 2016-01-21 光罩之製造方法、光罩及平面顯示器之製造方法
CN201610146972.0A CN106019807B (zh) 2015-03-28 2016-03-15 光掩模的制造方法、光掩模及平板显示器的制造方法
KR1020160034168A KR101821037B1 (ko) 2015-03-28 2016-03-22 포토마스크의 제조 방법, 포토마스크 및 플랫 패널 디스플레이의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015067785A JP6456748B2 (ja) 2015-03-28 2015-03-28 フォトマスクの製造方法、フォトマスク及びフラットパネルディスプレイの製造方法

Publications (2)

Publication Number Publication Date
JP2016188881A JP2016188881A (ja) 2016-11-04
JP6456748B2 true JP6456748B2 (ja) 2019-01-23

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JP2015067785A Active JP6456748B2 (ja) 2015-03-28 2015-03-28 フォトマスクの製造方法、フォトマスク及びフラットパネルディスプレイの製造方法

Country Status (4)

Country Link
JP (1) JP6456748B2 (ko)
KR (1) KR101821037B1 (ko)
CN (1) CN106019807B (ko)
TW (1) TWI597560B (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6259509B1 (ja) * 2016-12-28 2018-01-10 株式会社エスケーエレクトロニクス ハーフトーンマスク、フォトマスクブランクス及びハーフトーンマスクの製造方法
JP6368000B1 (ja) * 2017-04-04 2018-08-01 株式会社エスケーエレクトロニクス フォトマスク及びフォトマスクブランクス並びにフォトマスクの製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3312653B2 (ja) * 1990-12-26 2002-08-12 株式会社ニコン フォトマスク
JP4073882B2 (ja) * 2004-03-22 2008-04-09 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクブランク
JP4490980B2 (ja) * 2007-02-16 2010-06-30 クリーンサアフェイス技術株式会社 ハーフトーンブランクス
JP2009258357A (ja) * 2008-04-16 2009-11-05 Geomatec Co Ltd フォトマスク用基板及びフォトマスクとその製造方法
JP5182029B2 (ja) * 2008-11-18 2013-04-10 大日本印刷株式会社 階調マスク
JP5588633B2 (ja) 2009-06-30 2014-09-10 アルバック成膜株式会社 位相シフトマスクの製造方法、フラットパネルディスプレイの製造方法及び位相シフトマスク
JP5274393B2 (ja) * 2009-06-30 2013-08-28 アルバック成膜株式会社 ハーフトーンマスクの製造方法
JP5662032B2 (ja) 2010-02-05 2015-01-28 アルバック成膜株式会社 マスクブランクス及びハーフトーンマスク
TWI461833B (zh) * 2010-03-15 2014-11-21 Hoya Corp 多調式光罩、多調式光罩之製造方法及圖案轉印方法
JP5605917B2 (ja) * 2011-12-27 2014-10-15 Ｈｏｙａ株式会社 フォトマスクの製造方法、パターン転写方法及びフラットパネルディスプレイの製造方法
JP6063650B2 (ja) * 2012-06-18 2017-01-18 Hoya株式会社 フォトマスクの製造方法
WO2013190786A1 (ja) * 2012-06-20 2013-12-27 アルバック成膜株式会社 位相シフトマスクブランクス、位相シフトマスク及びその製造方法
WO2014103875A1 (ja) * 2012-12-27 2014-07-03 アルバック成膜株式会社 位相シフトマスクおよびその製造方法
JP2015049282A (ja) * 2013-08-30 2015-03-16 Hoya株式会社 表示装置製造用フォトマスク、該フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法

Also Published As

Publication number Publication date
TWI597560B (zh) 2017-09-01
TW201635009A (zh) 2016-10-01
CN106019807B (zh) 2020-04-14
CN106019807A (zh) 2016-10-12
KR101821037B1 (ko) 2018-03-08
KR20160115755A (ko) 2016-10-06
JP2016188881A (ja) 2016-11-04

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