JP6449458B2 - ナノ粒子エアロゾル生成器を有するナノワイヤ成長システム - Google Patents
ナノ粒子エアロゾル生成器を有するナノワイヤ成長システム Download PDFInfo
- Publication number
- JP6449458B2 JP6449458B2 JP2017525100A JP2017525100A JP6449458B2 JP 6449458 B2 JP6449458 B2 JP 6449458B2 JP 2017525100 A JP2017525100 A JP 2017525100A JP 2017525100 A JP2017525100 A JP 2017525100A JP 6449458 B2 JP6449458 B2 JP 6449458B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- flow
- nanoparticle aerosol
- nanowire growth
- growth system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000002105 nanoparticle Substances 0.000 title claims description 254
- 239000002070 nanowire Substances 0.000 title claims description 227
- 239000000443 aerosol Substances 0.000 title claims description 170
- 239000007789 gas Substances 0.000 claims description 263
- 238000006243 chemical reaction Methods 0.000 claims description 103
- 239000002243 precursor Substances 0.000 claims description 73
- 239000012159 carrier gas Substances 0.000 claims description 66
- 239000002245 particle Substances 0.000 claims description 59
- 239000003054 catalyst Substances 0.000 claims description 53
- 239000002994 raw material Substances 0.000 claims description 53
- 238000010790 dilution Methods 0.000 claims description 51
- 239000012895 dilution Substances 0.000 claims description 51
- 238000010438 heat treatment Methods 0.000 claims description 44
- 238000001704 evaporation Methods 0.000 claims description 33
- 230000008020 evaporation Effects 0.000 claims description 31
- 238000009826 distribution Methods 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 25
- 238000001816 cooling Methods 0.000 claims description 24
- 239000003085 diluting agent Substances 0.000 claims description 22
- 239000007787 solid Substances 0.000 claims description 17
- 238000007711 solidification Methods 0.000 claims description 15
- 230000008023 solidification Effects 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 238000007865 diluting Methods 0.000 claims description 11
- 230000007423 decrease Effects 0.000 claims description 8
- 238000011144 upstream manufacturing Methods 0.000 claims description 7
- 238000010891 electric arc Methods 0.000 claims description 6
- 239000007921 spray Substances 0.000 claims description 6
- 230000006698 induction Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 description 71
- 239000000758 substrate Substances 0.000 description 21
- 239000002019 doping agent Substances 0.000 description 20
- 238000010586 diagram Methods 0.000 description 17
- 230000008569 process Effects 0.000 description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 238000004891 communication Methods 0.000 description 12
- 230000005684 electric field Effects 0.000 description 10
- 239000012530 fluid Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 238000012546 transfer Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 239000011261 inert gas Substances 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 6
- 239000012809 cooling fluid Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 230000005484 gravity Effects 0.000 description 6
- 239000001307 helium Substances 0.000 description 6
- 229910052734 helium Inorganic materials 0.000 description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 6
- 239000012071 phase Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000015271 coagulation Effects 0.000 description 4
- 238000005345 coagulation Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- -1 for example Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 229910052756 noble gas Inorganic materials 0.000 description 4
- 230000006911 nucleation Effects 0.000 description 4
- 238000010899 nucleation Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 238000009529 body temperature measurement Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 150000002835 noble gases Chemical class 0.000 description 3
- 239000011164 primary particle Substances 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000006399 behavior Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 239000011258 core-shell material Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000010249 in-situ analysis Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000010944 silver (metal) Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000001308 synthesis method Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 206010053567 Coagulopathies Diseases 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 101000648659 Homo sapiens Transmembrane gamma-carboxyglutamic acid protein 3 Proteins 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 102100028870 Transmembrane gamma-carboxyglutamic acid protein 3 Human genes 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000003421 catalytic decomposition reaction Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000035602 clotting Effects 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000001089 thermophoresis Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
- C30B25/165—Controlling or regulating the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Catalysts (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/537,247 US9951420B2 (en) | 2014-11-10 | 2014-11-10 | Nanowire growth system having nanoparticles aerosol generator |
| US14/537,247 | 2014-11-10 | ||
| PCT/IB2015/002407 WO2016075549A1 (en) | 2014-11-10 | 2015-11-10 | Nanowire growth system having nanoparticles aerosol generator |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018501642A JP2018501642A (ja) | 2018-01-18 |
| JP2018501642A5 JP2018501642A5 (enExample) | 2018-12-20 |
| JP6449458B2 true JP6449458B2 (ja) | 2019-01-09 |
Family
ID=55411705
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017525100A Expired - Fee Related JP6449458B2 (ja) | 2014-11-10 | 2015-11-10 | ナノ粒子エアロゾル生成器を有するナノワイヤ成長システム |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9951420B2 (enExample) |
| EP (1) | EP3218534A1 (enExample) |
| JP (1) | JP6449458B2 (enExample) |
| CN (1) | CN107109689A (enExample) |
| WO (1) | WO2016075549A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160147482A (ko) * | 2015-06-15 | 2016-12-23 | 삼성전자주식회사 | 가스 혼합부를 갖는 반도체 소자 제조 설비 |
| CN109935563B (zh) * | 2019-04-03 | 2021-06-22 | 深圳第三代半导体研究院 | 一种多尺寸混合纳米颗粒膏体及其制备方法 |
| EP3822395A1 (en) * | 2019-11-13 | 2021-05-19 | Fundación Imdea Materiales | Nanowires network |
| US10844483B1 (en) | 2019-12-16 | 2020-11-24 | Quantum Elements Development, Inc. | Quantum printing methods |
| US20210308755A1 (en) * | 2020-04-02 | 2021-10-07 | Persimmon Technologies Corporation | Core-Shell Particles and Composite Material Synthesized Therefrom |
| US20230340336A1 (en) * | 2020-08-19 | 2023-10-26 | The Regents Of The University Of California | Chemical reaction and conversion in thermally heterogeneous and non-steady-state chemical reactors |
| US11623871B2 (en) | 2020-12-15 | 2023-04-11 | Quantum Elements Development Inc. | Rare earth metal instantiation |
| US11484941B2 (en) | 2020-12-15 | 2022-11-01 | Quantum Elements Development Inc. | Metal macrostructures |
| KR20240005033A (ko) * | 2021-05-06 | 2024-01-11 | 푼다시온 임데아 마테리알레스 | 나노와이어 네트워크 |
| CN114146733B (zh) * | 2021-09-29 | 2023-06-30 | 凯龙蓝烽新材料科技有限公司 | 一种壁流式载体催化剂的制备方法 |
| CN113941372A (zh) * | 2021-09-29 | 2022-01-18 | 凯龙蓝烽新材料科技有限公司 | 一种壁流式载体催化剂的生产系统 |
| EP4648891A1 (en) * | 2023-01-13 | 2025-11-19 | The Cyprus Institute | Method for generating high purity and finely dispersed nanoparticles by inductive local heating |
| DE102023103291A1 (de) * | 2023-02-10 | 2024-08-14 | Ri Research Instruments Gmbh | Prozessiervorrichtung, Verfahren zum Prozessieren einer Schmelze und Verfahren zum Prozessieren eines Trägerfluides |
| KR102604844B1 (ko) * | 2023-07-18 | 2023-11-23 | 대한민국 | 에어로졸 챔버를 활용한 입자 특성 관측 장치 |
Family Cites Families (50)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3562009A (en) * | 1967-02-14 | 1971-02-09 | Western Electric Co | Method of providing electrically conductive substrate through-holes |
| US4022928A (en) * | 1975-05-22 | 1977-05-10 | Piwcyzk Bernhard P | Vacuum deposition methods and masking structure |
| US4548798A (en) * | 1984-04-16 | 1985-10-22 | Exxon Research And Engineering Co. | Laser synthesis of refractory oxide powders |
| US5395180A (en) * | 1993-12-14 | 1995-03-07 | Advanced Ceramics Corporation | Boron nitride vaporization vessel |
| US5472749A (en) | 1994-10-27 | 1995-12-05 | Northwestern University | Graphite encapsulated nanophase particles produced by a tungsten arc method |
| US5776254A (en) * | 1994-12-28 | 1998-07-07 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for forming thin film by chemical vapor deposition |
| JPH09184080A (ja) * | 1995-12-27 | 1997-07-15 | Vacuum Metallurgical Co Ltd | 超微粒子による薄膜形成方法、およびその薄膜形成装置 |
| US5958348A (en) * | 1997-02-28 | 1999-09-28 | Nanogram Corporation | Efficient production of particles by chemical reaction |
| US6054041A (en) | 1998-05-06 | 2000-04-25 | Exxon Research And Engineering Co. | Three stage cocurrent liquid and vapor hydroprocessing |
| KR100649852B1 (ko) * | 1999-09-09 | 2006-11-24 | 동경 엘렉트론 주식회사 | 기화기 및 이것을 이용한 반도체 제조 시스템 |
| FR2800754B1 (fr) * | 1999-11-08 | 2003-05-09 | Joint Industrial Processors For Electronics | Dispositif evaporateur d'une installation de depot chimique en phase vapeur |
| JP4310880B2 (ja) * | 2000-02-18 | 2009-08-12 | 株式会社デンソー | 炭化珪素単結晶の製造方法及び製造装置 |
| US7301199B2 (en) | 2000-08-22 | 2007-11-27 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
| DE10048759A1 (de) | 2000-09-29 | 2002-04-11 | Aixtron Gmbh | Verfahren und Vorrichtung zum Abscheiden insbesondere organischer Schichten im Wege der OVPD |
| US7335908B2 (en) | 2002-07-08 | 2008-02-26 | Qunano Ab | Nanostructures and methods for manufacturing the same |
| US7534488B2 (en) | 2003-09-10 | 2009-05-19 | The Regents Of The University Of California | Graded core/shell semiconductor nanorods and nanorod barcodes |
| JP2006516220A (ja) * | 2002-12-17 | 2006-06-29 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 反応チャンバープラズマ反応器系による蒸発濃縮法を使用する、ナノ粒子の製造方法 |
| US7115230B2 (en) | 2003-06-26 | 2006-10-03 | Intel Corporation | Hydrodynamic focusing devices |
| US20100244262A1 (en) * | 2003-06-30 | 2010-09-30 | Fujitsu Limited | Deposition method and a deposition apparatus of fine particles, a forming method and a forming apparatus of carbon nanotubes, and a semiconductor device and a manufacturing method of the same |
| JP3810394B2 (ja) * | 2003-07-25 | 2006-08-16 | 日機装株式会社 | 内部加熱体装備反応管装置 |
| US7052546B1 (en) * | 2003-08-28 | 2006-05-30 | Cape Simulations, Inc. | High-purity crystal growth |
| JP2007523822A (ja) | 2004-01-15 | 2007-08-23 | ナノコンプ テクノロジーズ インコーポレイテッド | 伸長した長さのナノ構造の合成のためのシステム及び方法 |
| FI121334B (fi) | 2004-03-09 | 2010-10-15 | Canatu Oy | Menetelmä ja laitteisto hiilinanoputkien valmistamiseksi |
| WO2006033367A1 (ja) * | 2004-09-24 | 2006-03-30 | Japan Science And Technology Agency | カーボンナノ構造物の製造方法及び製造装置 |
| US7638002B2 (en) * | 2004-11-29 | 2009-12-29 | Tokyo Electron Limited | Multi-tray film precursor evaporation system and thin film deposition system incorporating same |
| US20060233968A1 (en) * | 2005-04-19 | 2006-10-19 | Tihiro Ohkawa | System and method for vaporizing a metal |
| US7901654B2 (en) * | 2005-05-05 | 2011-03-08 | Honda Motor Co., Ltd. | Synthesis of small diameter single-walled carbon nanotubes |
| JP4682202B2 (ja) | 2005-07-15 | 2011-05-11 | パナソニック株式会社 | 高圧放電ランプの点灯方法、点灯装置、光源装置及び投射型画像表示装置 |
| JP4689404B2 (ja) | 2005-08-15 | 2011-05-25 | キヤノン株式会社 | 基板処理装置及びこれを用いた基板の処理方法、電子源基板の処理装置及びこれを用いた電子源基板の処理方法 |
| JP5273495B2 (ja) * | 2005-12-13 | 2013-08-28 | 独立行政法人産業技術総合研究所 | クラスター成膜装置及び成膜方法、並びにクラスター生成装置及び生成方法 |
| US9845242B2 (en) | 2006-03-03 | 2017-12-19 | Battelle Memorial Institute | Method and apparatus for high mass concentration nano particle generation |
| US20070218200A1 (en) * | 2006-03-16 | 2007-09-20 | Kenji Suzuki | Method and apparatus for reducing particle formation in a vapor distribution system |
| GB2436398B (en) | 2006-03-23 | 2011-08-24 | Univ Bath | Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials |
| US8268281B2 (en) | 2006-05-12 | 2012-09-18 | Honda Motor Co., Ltd. | Dry powder injector for industrial production of carbon single walled nanotubes (SWNTs) |
| US7967891B2 (en) | 2006-06-01 | 2011-06-28 | Inco Limited | Method producing metal nanopowders by decompositon of metal carbonyl using an induction plasma torch |
| US20080000497A1 (en) * | 2006-06-30 | 2008-01-03 | Applied Materials, Inc. | Removal of organic-containing layers from large surface areas |
| US8231369B2 (en) * | 2006-10-24 | 2012-07-31 | Beneq Oy | Device and method for producing nanoparticles |
| KR100856873B1 (ko) | 2007-01-05 | 2008-09-04 | 연세대학교 산학협력단 | 무전해도금용 촉매활성 방법 |
| KR100860590B1 (ko) | 2007-01-15 | 2008-09-26 | 연세대학교 산학협력단 | 금속 에어로졸 나노입자를 생성하여 고정하는 방법 |
| US8246933B2 (en) | 2007-11-30 | 2012-08-21 | Stc.Unm | Aerosol method for nano silver-silica composite anti-microbial agent |
| GB0808385D0 (en) * | 2008-05-08 | 2008-06-18 | Naneum Ltd | A condensation apparatus |
| TWI376269B (en) | 2009-06-30 | 2012-11-11 | Yao Chuan Lee | Nano-aerosol generator with controllable size |
| US9305766B2 (en) | 2009-12-22 | 2016-04-05 | Qunano Ab | Method for manufacturing a nanowire structure |
| WO2011137446A2 (en) | 2010-04-30 | 2011-11-03 | University Of Southern California | Fabrication of silicon nanowires |
| WO2011142717A1 (en) | 2010-05-11 | 2011-11-17 | Qunano Ab | Gas-phase synthesis of wires |
| US20140345686A1 (en) * | 2012-02-03 | 2014-11-27 | Qunano Ab | High-throughput continuous gas-phase synthesis of nanowires with tunable properties |
| CN104380469B (zh) | 2012-04-12 | 2018-06-22 | 索尔伏打电流公司 | 纳米线官能化、分散和附着方法 |
| EP2855742B1 (en) | 2012-05-25 | 2016-12-14 | Sol Voltaics AB | Concentric flow reactor |
| WO2013184458A1 (en) * | 2012-06-05 | 2013-12-12 | Dow Corning Corporation | Fluid capture of nanoparticles |
| US8940562B1 (en) * | 2014-06-02 | 2015-01-27 | Atom Nanoelectronics, Inc | Fully-printed carbon nanotube thin film transistor backplanes for active matrix organic light emitting devices and liquid crystal displays |
-
2014
- 2014-11-10 US US14/537,247 patent/US9951420B2/en active Active
-
2015
- 2015-11-10 JP JP2017525100A patent/JP6449458B2/ja not_active Expired - Fee Related
- 2015-11-10 EP EP15837210.2A patent/EP3218534A1/en not_active Withdrawn
- 2015-11-10 CN CN201580069927.3A patent/CN107109689A/zh active Pending
- 2015-11-10 WO PCT/IB2015/002407 patent/WO2016075549A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| US9951420B2 (en) | 2018-04-24 |
| EP3218534A1 (en) | 2017-09-20 |
| US20160130698A1 (en) | 2016-05-12 |
| JP2018501642A (ja) | 2018-01-18 |
| WO2016075549A1 (en) | 2016-05-19 |
| CN107109689A (zh) | 2017-08-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6449458B2 (ja) | ナノ粒子エアロゾル生成器を有するナノワイヤ成長システム | |
| US11702761B2 (en) | Concentric flow reactor | |
| CN102971452B (zh) | 线的气相合成 | |
| TWI503867B (zh) | Ｃｖｄ製程及ｃｖｄ反應器 | |
| JP2018501642A5 (enExample) | ||
| JP2013526474A5 (enExample) | ||
| US20190085454A1 (en) | Vertical deposition system | |
| HK1236586A1 (en) | Nanowire growth system having nanoparticles aerosol generator | |
| EP4334056A1 (en) | Nanowires network | |
| HK1245852A1 (en) | Concentric flow reactor | |
| CN216864302U (zh) | 一种具有均匀温度场的二维材料气相沉积装置 | |
| KR101199221B1 (ko) | 실리콘계 나노입자 박막 증착방법, 실리콘계 나노입자 박막 및 이를 위한 실리콘계 나노입자 박막 증착장치 | |
| JP5848170B2 (ja) | 気相成長装置 | |
| HK1237004A (en) | Gas-phase synthesis of wires | |
| HK1237004A1 (zh) | 线的气相合成 | |
| Zhang et al. | Electron Microscopy Study of Y-shaped Carbon Fibers with Different Morphologies |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181108 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20181108 |
|
| A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20181108 |
|
| A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20181119 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20181122 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20181205 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6449458 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |