JP6445703B2 - セキュリティ機能を有する回路を含む半導体デバイス - Google Patents
セキュリティ機能を有する回路を含む半導体デバイス Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 94
- 238000007654 immersion Methods 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 230000006870 function Effects 0.000 description 49
- 238000004519 manufacturing process Methods 0.000 description 17
- 239000000463 material Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/57—Protection from inspection, reverse engineering or tampering
- H01L23/576—Protection from inspection, reverse engineering or tampering using active circuits
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09C—CIPHERING OR DECIPHERING APPARATUS FOR CRYPTOGRAPHIC OR OTHER PURPOSES INVOLVING THE NEED FOR SECRECY
- G09C1/00—Apparatus or methods whereby a given sequence of signs, e.g. an intelligible text, is transformed into an unintelligible sequence of signs by transposing the signs or groups of signs or by replacing them by others according to a predetermined system
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/20—Initialising; Data preset; Chip identification
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- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Theoretical Computer Science (AREA)
- Semiconductor Integrated Circuits (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
なお、本明細書で使用する「半導体デバイス」は、半導体で作られる1つのデバイス(素子、ICチップ、モジュール等)を意味し、「半導体回路」、「半導体集積回路」、「半導体装置」等の用語と同様な意味で使用されるものである。
本発明の目的は、BEOL内において内蔵されるセキュリティ機能を有する回路の存在(その位置及び機能)が特定されにくい識別/追跡可能な半導体デバイスを提供することである。
12:半導体デバイスの上面
14:複数の層(絶縁層)
16、18:機能素子(トランジスタ等)
20:配線(配線層、導電ビア)
22、23、24:セキュリティ機能回路(層)
30、36:セレクタ
32:アービタ
34:リングオシレータ(RO)
38:コンパレータ
40:ANDゲート
42:インバータ
44、46:フリップフロップ(FF)
100:半導体デバイス
Claims (7)
- フロントエンドと、複数の層を含むバックエンドとを備え、
前記バックエンドの前記複数の層中の配線ピッチが100nm以上である少なくとも一層にセキュリティ機能を有する回路を設け、
前記セキュリティ機能は、半導体の特性ばらつきを利用する物理的に複製困難な関数(PUF)を含む、半導体デバイス。 - フロントエンドと、複数の層を含むバックエンドとを備え、
前記バックエンドの前記複数の層中のM5以上(M5、M6、M7、・・・)の配線層の少なくとも一層にセキュリティ機能を有する回路を設け、
前記セキュリティ機能は、半導体の特性ばらつきを利用する物理的に複製困難な関数(PUF)を含む、半導体デバイス。 - フロントエンドと、複数の層を含むバックエンドとを備え、
前記バックエンドの前記複数の層中の液浸ArF露光を用いる必要が無い少なくとも一層にセキュリティ機能を有する回路を設け、
前記セキュリティ機能は、半導体の特性ばらつきを利用する物理的に複製困難な関数(PUF)を含む、半導体デバイス。 - フロントエンドと、複数の層を含むバックエンドとを備え、
前記バックエンドの前記複数の層中の200nm以上の露光波長を用いて露光される少なくとも一層にセキュリティ機能を有する回路を設け、
前記セキュリティ機能は、半導体の特性ばらつきを利用する物理的に複製困難な関数(PUF)を含む、半導体デバイス。 - 前記少なくとも一層は多結晶半導体を含む、請求項1から4のいずれかに記載の半導体デバイス。
- 前記多結晶半導体は、多結晶Siまたは多結晶Geを含む、請求項5に記載の半導体デバイス。
- 前記PUFは、Arbiter PUF、Ring Oscillator PUF、SRAM PUF、及びButterfly PUFの中から選択された少なくもと1つを含む、請求項1〜6のいずれかに記載の半導体デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2015158407 | 2015-08-10 | ||
JP2015158407 | 2015-08-10 | ||
PCT/JP2016/072806 WO2017026350A1 (ja) | 2015-08-10 | 2016-08-03 | セキュリティ機能を有する回路を含む半導体デバイス |
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JPWO2017026350A1 JPWO2017026350A1 (ja) | 2018-05-10 |
JP6445703B2 true JP6445703B2 (ja) | 2018-12-26 |
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US (1) | US10636751B2 (ja) |
EP (1) | EP3336887A4 (ja) |
JP (1) | JP6445703B2 (ja) |
KR (1) | KR102002263B1 (ja) |
CN (1) | CN107851611B (ja) |
WO (1) | WO2017026350A1 (ja) |
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JP2019121884A (ja) | 2017-12-28 | 2019-07-22 | 三菱重工業株式会社 | 集積回路、制御装置、情報配信方法及び情報配信システム |
JP7046324B2 (ja) * | 2018-02-15 | 2022-04-04 | 株式会社吉川システック | 半導体装置及び半導体装置の設計方法 |
US10916498B2 (en) * | 2018-03-28 | 2021-02-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interconnect structure for logic circuit |
US10778451B2 (en) * | 2018-07-30 | 2020-09-15 | United States Of America As Represented By The Secretary Of The Navy | Device and method for hardware timestamping with inherent security |
KR102148569B1 (ko) * | 2018-10-12 | 2020-08-27 | 윈본드 일렉트로닉스 코포레이션 | 반도체 장치 |
US11282799B2 (en) * | 2020-01-14 | 2022-03-22 | United Microelectronics Corp. | Device for generating security key and manufacturing method thereof |
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JP2002110679A (ja) * | 2000-09-29 | 2002-04-12 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
US6661098B2 (en) * | 2002-01-18 | 2003-12-09 | International Business Machines Corporation | High density area array solder microjoining interconnect structure and fabrication method |
TWI237307B (en) * | 2003-05-01 | 2005-08-01 | Nikon Corp | Optical projection system, light exposing apparatus and light exposing method |
JP4230334B2 (ja) * | 2003-10-31 | 2009-02-25 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
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JP2010003712A (ja) | 2007-08-09 | 2010-01-07 | Renesas Technology Corp | 半導体装置、半導体装置の配置配線方法、及びデータ処理システム |
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CN103236922B (zh) * | 2013-04-23 | 2017-02-08 | 浙江华仪电子股份有限公司 | 具有物理不可克隆功能的电路、电子装置及实现方法 |
US9117824B2 (en) * | 2013-09-20 | 2015-08-25 | International Business Machines Corporation | Embedded on-chip security |
KR102186475B1 (ko) * | 2013-12-31 | 2020-12-03 | 주식회사 아이씨티케이 홀딩스 | 랜덤한 디지털 값을 생성하는 장치 및 방법 |
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- 2016-08-03 KR KR1020187003549A patent/KR102002263B1/ko active IP Right Grant
- 2016-08-03 EP EP16835047.8A patent/EP3336887A4/en active Pending
- 2016-08-03 WO PCT/JP2016/072806 patent/WO2017026350A1/ja active Application Filing
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JPWO2017026350A1 (ja) | 2018-05-10 |
US10636751B2 (en) | 2020-04-28 |
CN107851611A (zh) | 2018-03-27 |
EP3336887A1 (en) | 2018-06-20 |
WO2017026350A1 (ja) | 2017-02-16 |
CN107851611B (zh) | 2022-03-18 |
EP3336887A4 (en) | 2019-04-17 |
KR102002263B1 (ko) | 2019-07-19 |
KR20180023004A (ko) | 2018-03-06 |
US20190019766A1 (en) | 2019-01-17 |
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